BD647

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## BD645; 647 BD649; 651 

## SILICON DARLINGTON POWER TRANSISTORS 

N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-220 plastic envelope. P-N-P complements are BD646, BD648, BD650 and BD652. 

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.<br>QUICK REFERENCE DATA<br>BD645 | 647 649 | 651<br>Collector-base voltage (open emitter) VCBO —Mmax. 80 | 100 120 | 140 Vv<br>Collector-emitter voltage (open base) VCEQ max. 60 80 | 100 | 120 V.<br>Collector current (peak value) Icm max. 12 A<br>JunctionTotal powertemperaturedissipation up to Tmp. = 25 PC TjProt max.max. 62.5150 Wwo¢<br>D.C. current gain:<br>ic =0,5 A; Vee =3 V nee typ. 1900<br>Ic =3,0A; Voce =3V hee > 750<br>Cut-off frequency: Ic =3 A; VcE=3 V fhfe typ. 50 kHz<br>MECHANICAL DATA ams od _— Sei LD os Dimensions in mm<br>Fig.<br>1 TO-220AB. | Engel | 13 oa |<br>Collector connected | 4 ' u<br>to mounting base. n Gx 284 2wl min5,9<br>a 1 ~] # 15,8<br>| | | max<br>|<br>— 7a ! |<br>3,5  C—o5_ a an et cecal<br>not max 54 .<br>tinned {iL ae<br>} eno :<br>13 | 4 12,7<br>max” | |~* min<br>(2x)<br>bi] cli} e<br>~~ | +l[-o8 max (3x) + las 0,6<br>2,54 2,54+ oe 12,4<br>**----- End of picture text -----**<br>


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## BD645; 647 BD649; 651 

## CIRCUIT DIAGRAM 

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## RATINGS 

Limiting values in accordance with the Absolute Maximum System (IEC 134) 

||||BD645|| 647|||649 | 651|649 | 651||
|---|---|---|---|---|---|---|---|---|
|Coliector-base voitage (open emitter)|VcBo|max.|80|100||120|140|V|
|Collector-emitter voltage (open base)|VCEQ|max.|60|80|||100 | 120||V|
|Emitter-base voltage (open collector)|VEBO|max.|5|5||5|5|V|
|Collector current (d.c.)|Ic|max.|||8|||A|
|Collector current (peak value)|Iom|max.|||12|||A|
|Base current (d.c.)|Ip|max.|||150|||mA|
|Total power dissipation up toTmb = 25.°C|Prot|max.||62,5||||W|
|Storage temperature|Tstg||—65 to +||150|||a|
|Junction temperature *|Tj|max.|||150|||oC|
|THERMAL RESISTANCE *|||||||||
|From junction to mounting base|Rth j-mb|=|||2|||K/W|
|Fromjunctiontoambientinfreeair|Rthj-a|=|||70|||K/W|



- Based on maximum average junction temperature in line with common industrial practice. The resulting higher junction temperature of the output transistor part is taken into account. 

||||||N<br>PN|
|---|---|---|---|---|---|
|BD649:<br>CHARACTERISTICS|||||MAGNA<br>)=C|
|Tj = 25 °C unless otherwise specified<br>Collector cut-off current||||||
|le =0;VcBo =VcEOmax<br>le = 0;Vog=%Vogomax:Tj= 150-9¢C<br>1B =0;VCE =%VcEOmax<br>Emitter cut-off current|||ICBO<br>ICBO<br>ICEO|te<br><<br><|0,2 mA<br>2 mA<br>0,5 mA|
|Ic=0;VeRp=5V<br>D.C. current gain (note 1)|||lEBO|<|5 mA|
|Ic=0,5A;Vce=3V<br>Ic=<br>3A;Vce=3V<br>lc=<br>8A;VceE=3V<br>Base-emitter voltage (notes 1 and 2)<br>IC=3A;Vcp=3V<br>Saturation voltages (note 1)|||hEe<br>HEE<br>.<br>hee<br>VBE|typ.<br>><br>typ.<br><|1900<br>750<br>1800<br><0 ¥|
|IC=3A; lp = 12mA<br>Ic=5A; Ip=50mA|;||VcEsat<br>VCEsat|<<br><|2°<br>2,5 V|
|Diode forward voltage|||VBEsat|=|3 Vv|
|IFH3A<br>Collector capacitance at f= 1 MHz<br>le=!e=0; Vcg=10V<br>Cut-off frequency|||Ve<br>Cy|typ.<br>typ.|1,2 -V.<br>75 pF|
|IC=3A;Vop=3V<br>Turn-off breakdown energy with inductive load<br>7 |Botf= 9; lem = 4,5 A; ty = 1 ms;|||Thte|typ.|50 kHz|
|T = 100ms; see Fig. 3<br>Small signal current gain<br>Ic=3A4;Vce=3V;f=1 MHz<br>Second breakdown collectorcurrent|||E(BR)<br>| bFe||=<br>typ.|50 mJ<br>50|
|VcE=60V; tp =0,1 s<br>Switching times (see Figs 4 and 5)|||(SB)|>|1,04 A|
|ICon = 3 A; IBon =—IBorf=12mA<br>turn-on<br>time||.|ton|wp. .ieee<br><<br>2,5 us||
|turn-off time|||loff|typ.<br>eid|5.<br>ps<br>10us|



## BD649: CHARACTERISTICS 

## Notes 

1. Measured under pulse conditions: tp < 300 ys, & < 2%, 

2. VBE decreases by about 3,8 mV/K with increasing temperature. 

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BD645; 647<br>BD649; 651 5 mH<br>vert,<br>oscilloscope<br>i 01.0 Voc+<br>~\<br>R Fig. 3 Test circuit for turn-off<br>Vim (\y- TUT breakdown energy.<br>| kJ oo Vim= 12 V; Rg = 2709;<br>0 | | hor. tp = 1 ms;6 = 1%,<br>el,teT+lee | oscilloscope<br>7273863 .4<br>t- 7277499.2<br>go+--—-! SS et leon<br>(°6)| |<br>10 +===4 !<br>| | t<br>ho |<br>|||<br>|== =T gery<br>| |<br>90 | | 7 , leon<br>7 — nF en ie<br>(%o) | | |<br>WY | | | | | Fig. 4 Switching times waveforms.<br>or a<br>—+| it s U¢|<+—<br>eres) t<br>ton a <<<br>Voo  -<br>Vec = 10V<br>R4 Vim = 10V<br>—-Vep= 4V<br>R1 = 562<br>“Ty0 i R2 T.U.T. R4 R 32  =560==41032 2<br>tp=te = 151s<br>a T = 500 us<br>“ VeB Fig. 5 Switching times test circuit.<br>**----- End of picture text -----**<br>


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BD645; BD649; 

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Fig. 6 Safe Operating ARea; Tmp = 25 OC 

- | Region of permissible d.c. operation. I! Permissible extension for repetitive pulse operation. 

- (1) Ptot max and Poeak max lines. (2) Second-breakdown limits (independent of temperature). 

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