BCV27

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## **BCV27 NPN Darlington Transistor** 

## **Description** 

This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from process 05. 

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C<br>E<br>SOT-23 B<br>Mark: FF<br>**----- End of picture text -----**<br>


**Ordering Information** 

**Part Number Marking Package Packing Method** BCV27 FF SOT-23 3L Tape and Reel ~~1~~ 

## **Absolute Maximum Ratings**[(1),(2)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCEO|Collector-Emitter Voltage|30|V|
|VCBO|Collector-Base Voltage|40|V|
|VEBO|Emitter-Base Voltage|10|V|
|IC|Collector Current - Continuous|1.2|A|
|TJ, TSTG|Operating and Storage Junction Temperature Range|-55 to +150|°C|



## **Notes:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. 

© 1997 Fairchild Semiconductor Corporation BCV27 Rev. 1.1.0 

www.fairchildsemi.com 

## **Thermal Characteristics**[(3)] 

Values are at TA = 25°C unless otherwise noted. 

|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|
|---|---|---|---|---|---|---|---|---|
|**Note:**<br>3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.<br>**Electrical Characteristics**<br>Values are at TA= 25°C unless otherwise noted.<br>**Symbol**<br>**Parameter**<br>**Max.**<br>**Unit**<br>PD<br>Total Device Dissipation<br>350<br>mW<br>Derate Above 25°C<br>2.8<br>mW/°C<br>RθJA<br>Thermal Resistance, Junction-to-Ambient<br>357<br>°C/W<br>**Symbol**<br>**Parameter**<br>**Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>~~<==~~|||||||||
|V(BR)CEO|Collector-Emitter Breakdown Voltage||IC= 10 mA, IB= 0|30||||V|
|V(BR)CBO|Collector-Base Breakdown Voltage||IC= 10μA, IE= 0|40||||V|
|V(BR)EBO|Emitter-Base Breakdown Voltage||IE= 100 nA, IC= 0|10||||V|
|ICBO|Collector Cut-Off Current||VCB= 30 V, IE= 0|||0.1||μA|
|IEBO|Emitter Cut-Off Current||VEB= 10 V, IC= 0|||0.1||μA|
||||IC= 1.0 mA, VCE= 5.0 V|4000|||||
|hFE|DC Current Gain||IC= 10 mA, VCE= 5.0 V|10000|||||
||||IC= 100 mA, VCE= 5.0 V|20000|||||
|VCE(sat)|Collector-Emitter Saturation Voltage||IC= 100 mA, IB= 0.1 mA|||1.0||V|
|VBE(sat)|Base-Emitter Saturation Voltage||IC= 100 mA, IB= 0.1 mA|||1.5||V|
|fT|Current Gain - Bandwidth Product||IC= 30 mA, VCE= 5.0 V,<br>f = 100 MHz||220|||MHz|
|Cc|Collector Capacitance||VCB= 30 V, IE= 0,<br>f = 1.0 MHz||3.5|||pF|



© 1997 Fairchild Semiconductor Corporation BCV27 Rev. 1.1.0 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

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250 1.6<br>V    = 5V CE β = 1000<br>200 gg a 1<br>125 °C 1.2<br>el ETT<br>150 EN Ly _  - 40 °C yy<br>fe [0]  25 °C EV 0.8 poeee<br>100 ANee ee al  25°C ll |<br> 125 °C<br>50 HEHE - 40 °C |_|\NE \ 0.4 SS||inn — ||<br>SSSPEEPSAT a| ||<br>0 PE CCTiT SSS SSS 0 A<br>0.001 0.01 0.1 1 1 10 100 1000<br>I   - COLLECTOR CURRENT  (A)C I   - COLLECTOR CURRENT  (mA)C<br>Figure 1. Typical Pulsed Current Gain vs.                     Figure 2. Collector-Emitter Saturation Voltage vs.<br>Collector Current Collector Current<br>FE CESAT<br>h    - TYPICAL PULSED CURRENT GAIN (K) V        - COLLECTOR EMITTER VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 1. Typical Pulsed Current Gain vs. Collector Current** 

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2<br>β = 1000<br>1.6  - 40 °C<br>Po.) Tn.MCLo_o<br>25 °C<br>er emg<br>1.2<br>125 °C<br>0.8 r_|ne cai!_ |<br>Perm IE i<br>0.4<br>A|<br>a<br>0<br>1 10 100 1000<br>I   - COLLECTOR CURRENT  (mA)C<br>Figure 3. Base-Emitter Saturation Voltage vs.<br>Collector Current<br>100<br>V    CB=  30V<br>a —<br>a a a<br>10<br>SS SS SS SS SS<br>— |<br>1 ===<br>BSA<br>0.1 ————————es<br>—S——=S==—=S==S==S=<br>ee SS ===<br>0.01 Tr [ [| | |~ [{ [{ J 4<br>25 50 75 100 125<br>°<br>T  - AMBIENT TEMPERATURE (  C)A<br>BESAT<br>CBO<br>V         - BASE EMITTER VOLTAGE (V)<br>I      - COLLECTOR CURRENT (nA)<br>**----- End of picture text -----**<br>


**Figure 3. Base-Emitter Saturation Voltage vs. Collector Current** 

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2<br>1.6  - 40 °C<br>TootA = seal<br>25 °C<br>SE ee ul<br>1.2<br>125 °C<br>0.8 TTT]PISe TTTBeecil<br>eee ie |<br>0.4 V   = 5VCE<br>TTCIE A mull<br>0 PCI Ch<br>1 10 100 1000<br>I   - COLLECTOR CURRENT  (mA)C<br>Figure 4. Base Emitter On Voltage vs.<br>Collector Current<br>62.5 EE A<br>62 PT<br>a TT| eeTTT|<br>61.5<br>Se neeee<br>61 IN<br>60.5 CCCI<br>SHSCEN SNC<br>60 0<br>a a eS ll<br>59.5 a a| aa |<br>0.1 1 10 100 1000<br>RESISTANCE (k   ) Ω<br>BEON<br>V        - BASE EMITTER ON VOLTAGE (V)<br>CER<br>BV      - BREAKDOWN VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 5. Collector Cut-Off Current vs. Ambient Temperature** 

**Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base** 

© 1997 Fairchild Semiconductor Corporation BCV27 Rev. 1.1.0 

www.fairchildsemi.com 

3 

## **Typical Performance Characteristics** (Continued) 

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f = 1.0 MHz<br>20<br>alll<br>10 eelea ee Cib<br>SESS EHH<br>5<br>aim nnN Cob ll<br>a<br>2<br>0.1 1 10 100<br>V    - COLLECTOR VOLTAGE(V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Input and Output Capacitance vs. Reverser Voltage** 

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500<br>V     = 5V ce<br>400 EREeeLTEeePA<br>300 Tt fT ETCENEE LTT<br>ee) ee<br>200<br>aN<br>100<br>—<br>ef<br>0 | TL LTTE EE ET<br>1 10 20 50 100 150<br>I   - COLLECTOR CURRENT (mA)C<br>Figure 8. Gain Bandwidth Product vs.<br>Collector Current<br>T<br>f   - GAIN BANDWIDTH PRODUCT (MHz)<br>**----- End of picture text -----**<br>


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350 rt AE T tT fT tT ft tT ft Tf<br>300 rtP| || KTTN ft| ftft ft| fTtT fttT ft[tftf<br>250 rT | [| (Wet tT tT tT tT Tf<br>SOT-23<br>200 rYrFe|| [|ff| || ~—— [TN[|NEINE [TT 7[| Tt|EETf[ |<br>150100 Yrrotrt| tT| T| fT[— [|tT tT[ TKAETTTtT [ [ ]<br>P| | [ [ | tT TT [TNT Tt<br>50 YrP|| | | | | fT[|fT fT|| [|fttf fTft| tT[|ft INgft| TNAE[ffI|<br>0 Tr | tT [— [| | | [— [— 7 TT IN<br>0 25 50 75 100 125 150<br>TEMPERATURE  (  C)o<br>D<br>P   - POWER DISSIPATION (mW)<br>**----- End of picture text -----**<br>


**Figure 9. Power Dissipation vs. Ambient Temperature** 

© 1997 Fairchild Semiconductor Corporation BCV27 Rev. 1.1.0 

www.fairchildsemi.com 

4 

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0.95<br>2.92±0.20<br>3<br>1.40<br>1.30 [+0.20] 2.20<br>-0.15<br>1 2<br>(0.29) 0.60<br>0.37<br>0.95<br>0.20 A B 1.00<br>1.90 1.90<br>LAND PATTERN<br>RECOMMENDATION<br>1.20 MAX SEE DETAIL A<br>(0.93) 0.10<br>0.00<br>0.10 C<br>C<br>2.40±0.30<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>GAGE PLANE<br>   A)  REFERENCE JEDEC REGISTRATION<br>TO-236, VARIATION AB, ISSUE H.<br>0.23    B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>0.08    C)  DIMENSIONS ARE INCLUSIVE OF BURRS,<br>0.25        MOLD FLASH AND TIE BAR EXTRUSIONS.<br>   D)  DIMENSIONING AND TOLERANCING PER<br>       ASME Y14.5M - 1994.<br>0.20 MIN<br>SEATING    E)  DRAWING FILE NAME: MA03DREV10<br>(0.55) PLANE<br>**----- End of picture text -----**<br>


- B)  ALL DIMENSIONS ARE IN MILLIMETERS. 

- C)  DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. 

- D)  DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 

SCALE: 2X 

## ~~—~~ 

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|**Datasheet Identification**|**Product Status**|**Definition**|
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Rev. I73 

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