BC856
Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 250 mW, SOT-23, Surface Mount
- Manufacturer: MULTICOMP PRO
- Product type:
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:125hFE; Tr
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 250mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 100MHz
- Transistor Case Style: SOT-23
- DC Current Gain hFE Min: 125hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 65V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.027 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## PNP ## Transistor ## **Features** - Low current (maximum 100mA) - Low voltage (maximum 65V) ## **Applications** - General purpose switching and amplification ## **Max. Ratings and Characteristics: TAMB = 25°C unless otherwise specified** |**Parameter**|**Symbol**|**Values**|**Unit**| |---|---|---|---| |Collector - Base Voltage - BC856<br>BC857<br>BC858|VCBO|-80<br>-50<br>-30|V| |Collector - Emitter Voltage - BC856<br>BC857<br>BC858|VCEO|-65<br>-45<br>-30|| |Emitter - Base Voltage|VEBO|-5|| |Collector Current - Continuous|IC|-0.1|A| |Collector Dissipation|PC|250|mW| |Junction and Storage Temperature|TJ, TSTG|-65 to +150|°C| |**Parameter**<br>~~Pee~~|**Symbol**<br>~~Pee~~|**Test Conditions**<br>~~Pee~~|**Min.**<br>~~Pee~~|**Typ.**<br>~~Pee~~|**Max.**<br>~~Pee~~|**Unit**<br>~~Pee~~| |---|---|---|---|---|---|---| |Collector-Base Breakdown Voltage<br>~~FL~~|V(BR)CBO<br>~~FL~~|IC = -10µA IE=0<br>BC856<br>BC857<br>BC858<br>~~FL~~|-80<br>-50<br>-30<br>~~FL~~|~~FL~~|~~FL~~|V<br>~~eh~~| |Collector-Emitter Breakdown Voltage<br>~~hE~~|V(BR)CEO<br>~~hE~~|IC = -10µA IB=0<br>BC856<br>BC857<br>BC858<br>~~hE~~|-65<br>-45<br>-30<br>~~hE~~|~~hE~~|~~hE~~|| |Emiter-Base Breakdown Voltage<br>~~Pee~~|V(BR)EBO<br>~~Pee~~|IE= -1µA IC= 0<br>~~Pee~~|-5<br>~~Pee~~|-<br>~~Pee~~<br>~~eh~~|-<br>~~Pee~~<br>~~eh~~|| |Collector Cut-Off Current<br>~~1-4~~|ICBO<br>~~1-4~~|VCB= -30V IE= 0<br>~~1-4~~|-<br>~~1-4~~|-1<br>~~1-4~~<br>~~eh~~|-15<br>~~1-4~~<br>~~eh~~|nA<br>~~1-4~~<br>~~eh~~| |Emitter Cut-Off Current<br>~~1-4~~|IEBO<br>~~1-4~~|VEB= -5V, IC= 0<br>~~1-4~~|-<br>~~1-4~~|-<br>~~1-4~~<br>~~eh~~|-0.1<br>~~1-4~~<br>~~eh~~|µA<br>~~1-4~~<br>~~eh~~| |DC Current Gain BC856, 857<br>BC856A, 857A, 858A<br>BC856B, 857B, 858B<br>BC857C, 858C<br>~~1-4~~|hFE<br>~~1-4~~|VCE= -5V, Ic = -2mA<br>~~1-4~~|125<br>125<br>220<br>420<br>~~1-4~~|-<br>~~1-4~~<br>~~eh~~|475<br>250<br>475<br>800<br>~~1-4~~<br>~~eh~~|-<br>~~1-4~~<br>~~eh~~| |Collector-Emitter Saturation Voltage<br>~~ee~~|VCE(sat)<br>~~ee~~<br>~~ee~~|Ic = -100mA, IB= -5mA<br>Ic = -10mA, IB= -0.5mA<br>~~ee~~<br>~~e~~|-<br>~~ee~~<br>~~eee~~|-<br>~~eh~~<br>~~ee~~<br>~~eee~~|-0.65<br>-0.3<br>~~eh~~<br>~~ee~~<br>~~eee~~|V<br>~~eh~~<br>~~ee~~<br>~~eee~~| |Base - Emitter Saturation Voltage<br>~~e~~|VBE(sat)<br>~~e~~<br>~~ee~~|IC= -10mA, IB= -0.5mA<br>IC= -100mA, IB= -5mA<br>~~e~~~~**e**~~<br>~~e~~|-<br>~~**e**~~<br>~~eee~~|-0.7<br>-0.85<br>~~**e**~~<br>~~eee~~|-<br>~~**e**~~<br>~~eee~~|V<br>~~**e**~~<br>~~eee~~| |Base Emitter Voltage<br>~~ee~~|VBE<br>~~ee~~<br>~~ee~~|IC= -2mA, VCE= -5V<br>IC= -10mA, VCE= -5V<br>~~e ~~<br>~~ee~~|-0.6<br> ~~eee~~<br>~~ee~~|-0.65<br>~~eee~~<br>~~ee~~|-0.75<br>-0.82<br>~~eee~~<br>~~ee~~|V<br>~~eee~~<br>~~ee~~| Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro Page <1> 02/11/22 V1.1 ## PNP Transistor |**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ. **|**Max.**|**Unit**| |---|---|---|---|---|---|---| |Collector Capacitance|CC|VCB= -10V, IE= IE= 0<br>f = 1MHz|-|4.5|-|pF| |Transition Frequency|F|IC= -200µA, VCE= -5V,<br>RS=2kΩ f = 1kHz,<br>B = 200Hz|-|2|10|dB| |Transition Frequency|fT|VCE= -10 IC= -50,<br>f = 20 MH|100|-|-|MHz| ## **Maximum Ratings and Characteristics : Tamb = 25°C unless otherwise specified** ## **Ratings and Characteristic Curves** **==> picture [477 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> BC857A : VCE = - 5V BC857A : VCE = -5 V BC857A : IC / IB = 20<br>(1) Tamb = 150°C (1) Tamb = -55°C (1) Tamb = 150°C<br>(2) Tamb = 25°C (2) Tamb = 25°C (2) Tamb = 25°C<br>(3) Tamb = -55°C (3) Tamb = 150°C (3) Tamb = -55°C<br>DC Current Gain as a Function of Collector Base-Emitter Voltage as a Function of Collector-Emitter Saturation Voltage as a Function<br>Current; Typical Values Collector Current; Typical Values of Collector Current; Typical Values<br>ta weno Ye’-1,200 CM TT To<br>gag EE<br>f 800 | a | <stl W<br>eatpeeA till na]ii at maCOT0 0 -800 HHConntae 2 eTaTHEI AT<br>Sere malilifoealleae eae a009I com CUTwei mT<br>a SGA Coca il te ea |<br>mn Sail<br>=aEEE “CEEMike TI IEA)TN SoaHie<br>sei | soo HELIUMal TMSaul enam am|<br>Sat ta er ana aan ee ND aii 00<br>o of COMMCHMTTC Sn A<br>CCT TnTTC TT TT a<br>07 A -10 teIp (mM.as er A<br>BC857A : IC / IB = 20 BC857B : VCE = -5V BC857B : VCE = -5V<br>(1) Tamb = -55°C (1) Tamb = 150°C (1) Tamb = -55°C<br>(2) Tamb = 25°C (2) Tamb = 25°C (2) Tamb = 25°C<br>(3) Tamb = 150°C (3) Tamb = -55°C (3) Tamb = 150°C<br>Base-Emitter Voltage as a Function of DC Current Gain as a Function of Collector Base-Emitter Voltage as a Function of<br>Collector Current; Typical Values Current; Typical Values Collector Current; Typical Values<br>**----- End of picture text -----**<br> Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro Page <2> 02/11/22 V1.1 ## PNP Transistor **BC857B : IC / IB = 20 BC857B : IC / IB = 20 BC857C : VCE = -5 V (1) Tamb = 150°C (1) Tamb = -55°C (1) Tamb = 150°C (2) Tamb = 25°C (2) Tamb = 25°C (2) Tamb = 25°C (3) Tamb = -55°C (3) Tamb = 150°C (3) Tamb = -55°C** **Collector-Emitter Saturation Voltage as a Function of Collector Current; Typical Values** **Base-Emitter Voltage as a Function of Collector Current; Typical Values** **DC Current Gain as a Function of Collector Current; Typical Values** **BC857C : VCE = -5 V BC857C : IC / IB = 20 BC857C : IC / IB = 20 (1) Tamb = -55°C (1) Tamb = 150°C (1) Tamb = -55°C (2) Tamb = 25°C (2) Tamb = 25°C (2) Tamb = 25°C (3) Tamb = 150°C (3) Tamb = -55°C (3) Tamb = 150°C Base-Emitter Voltage as a Function of Collector Collector-Emitter Saturation Voltage as a Base-Emitter Voltage as a Function of Current; Typical Values Function of Collector Current; Typical Values Collector Current; Typical Values** ## **Package Outline** ## **Plastic Surface Mounted Package** ||**SOT-23**|||**SOT-23**| |---|---|---|---|---| |**Dim.**<br>**A**<br>**B**<br>**C**<br>**D**<br>**E**|**Min.**<br>2.85<br>1.25<br>**Max.**<br>2.95<br>1.35<br>1 Typical<br>0.4 Typical<br>0.35<br>0.48||**Dim.**<br>**G**<br>**H**<br>**J**<br>**K**|**Min.**<br>1.85<br>0.02<br>**Max.**<br>1.95<br>0.1<br>0.1 Typical<br>2.35<br>2.45| Dimensions : Millimetres Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro Page <3> 02/11/22 V1.1 ## PNP ## Transistor ## **Soldering Footprint** ||**Part Number**|**Marking code**| |---|---|---| ||BC856|3D| ||BC856A|3A| ||BC856B|3B| |BC857<br>3H<br>BC857A<br>3E<br>l||| ||BC857B|3F| ||BC857C|3G| ||BC858B|3K| **==> picture [97 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions : Millimetres<br>**----- End of picture text -----**<br> **Package Information** **Device Package Shipping** ~~—~~ BC856 / 857 / 858 SOT-23 3,000 / Tape and Reel ## **Part Number Table** |**Part Number Table**|| |---|---| |**Description**|**Part Number**| |Transistor, PNP, 0.1A, 65V, SOT23|Transistor, PNP, 0.1A, 65V, SOT23<br>BC856| |Transistor, PNP, 0.1A, 65V, SOT23|Transistor, PNP, 0.1A, 65V, SOT23<br>BC856A| |Transistor, PNP, 0.1A, 65V, SOT23|Transistor, PNP, 0.1A, 65V, SOT23<br>BC856B| |Transistor, PNP, 0.1A, 45V, SOT23|Transistor, PNP, 0.1A, 45V, SOT23<br>BC857| |Transistor, PNP, 0.1A, 45V, SOT23|Transistor, PNP, 0.1A, 45V, SOT23<br>BC857A| |Transistor, PNP, 0.1A, 45V, SOT23|Transistor, PNP, 0.1A, 45V, SOT23<br>BC857B| |Transistor, PNP, 0.1A, 45V, SOT23|Transistor, PNP, 0.1A, 45V, SOT23<br>BC857C| |Transistor, PNP, 0.1A, 30V, SOT23|BC858B| **Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro Page <4> 02/11/22 V1.1
Updated at April 13, 2026
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