Image not available
Illustrative purposes only
AUIRLL024ZTR
Power MOSFET, N Channel, 55 V, 5 A, 0.048 ohm, SOT-223, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HEXFET
- Qualification: AEC-Q101
- Power Dissipation: 2.8W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 2.8W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.048ohm
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 55V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 5A
- Drain Source On State Resistance: 0.048ohm
- Automotive Qualification Standard: AEC-Q101
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 1.3 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
AUIRLL024Z ~~_—~~ **AUTOMOTIVE GRADE** ## ~~Cinfineon~~ HEXFET[® ] Power MOSFET ## **Features** - Advanced Process Technology |**VDSS**<br>**55V**<br>**RDS(on) typ.**<br>**48m**<br>**ID**<br>**5.0A**<br>**max.**<br>**60m**<br> Advanced Process TechnologyAdvanced Process Technology<br>Ultra Low On-Resistance<br>Logic Level Gate Drive<br>150°C Operating Temperature<br>Fast Switching<br>Repetitive Avalanche Allowed up to Tjmax<br>Lead-Free, RoHS Compliant<br>~~=——~~|| |---|---| |Automotive Qualified *<br>D|| |**Description**<br>S|| |Specifically designed for Automotive applications, this HEXFET®<br>D|| |Power MOSFET utilizes the latest processing techniques to<br>G|| |achieve extremely low on-resistance per silicon area. Additional<br>SOT-223|| |features of this design are a junction operating temperature, fast<br>AUIRLL024Z|| |switching speed and improved repetitive avalanche rating . These|| |features combine to make this design an extremely efficient and<br>reliable device for use in Automotive applications and a wide<br>variety of other applications.<br>**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~->—+—}~~|| |**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>AUIRLL024Z<br>SOT-223<br>Tape and Reel<br>2500<br>AUIRLL024ZTR<br>~~——————~~|| |**Absolute Maximum Ratings**|| |Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress|| |ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not|| |implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance|| |and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless|| |otherwise specified.|| |**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**|| |ID@ TA= 25°C<br>Continuous Drain Current, VGS@ 10V<br>5.0|| |A<br>ID @TA= 70°C<br>Continuous Drain Current,VGS @10V<br>4.0|| |IDM<br>Pulsed Drain Current<br>40|| |PD@TA= 25°C<br>Maximum Power Dissipation (PCB Mount)<br>2.8<br>W<br>PD@TA= 25°C<br>Maximum Power Dissipation (PCB Mount)<br>1.0<br>Linear Derating Factor (PCB Mount)<br>0.02<br>W/°C<br>VGS<br>Gate-to-SourceVoltage<br>± 16<br>V<br>EAS<br>Single Pulse Avalanche Energy (ThermallyLimited) <br>21<br>EAS(Tested)<br>Single Pulse Avalanche Energy (Tested Value) <br>38<br>IAR<br>Avalanche Current<br>See Fig. 12a, 12b, 15, 16<br>A<br>EAR<br>Repetitive Avalanche Energy <br>mJ<br>TJ<br>Operating Junction and<br>-55 to + 150<br>°C<br>TSTG<br>StorageTemperatureRange<br>mJ<br>~~sr oe~~<br>~~es~~<br>~~a~~<br>~~es~~<br>~~A~~<br>~~ee~~<br>~~aee~~<br>~~ee ee~~|| |**Thermal Resistance**|| |**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>°C/W<br>RJA<br>Junction-to-Ambient(PCB Mount,steadystate) <br>–––<br>45<br>RJA<br>Junction-to-Ambient(PCB Mount,steadystate) <br>–––<br>120<br>~~———————~~<br>~~ee~~|| |HEXFET® is a registered trademark of Infineon.|| |*****Qualification standards can be found atwww.infineon.com|| |1<br>2015-10-29<br>~~———————~~|| ~~Cinfineon~~ AUIRLL024Z ~~|... ]~~ **Static @ TJ = 25°C (unless otherwise specified)** |Qg<br>~~es~~<br>~~**e**e~~<br>~~s~~|Total Gate Charge<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|7.0<br>~~ee~~<br>~~ee~~<br>~~oe~~<br>|11<br>~~ee~~<br>~~ee~~<br>~~oe~~<br>|nC<br>~~ee~~|ID= 3.0A<br>VDS= 44V<br>VGS=5.0V<br>~~ee~~| |---|---|---|---|---|---|---| |g<br>Qgs<br>~~es~~<br>~~**e**e~~<br>~~s~~|Gate-to-Source Charge<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|1.5<br>~~ee~~<br>~~ee~~<br>~~oe~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~oe~~<br>||| |Qgd<br>~~**e**e~~<br>~~s~~<br>~~es~~|Gate-to-Drain Charge<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|4.0<br>~~ee~~<br>~~oe~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~oe~~<br>~~ee~~<br>||| |gd<br>td(on)<br>~~**e**e~~<br>~~s~~<br>~~es~~<br>~~**es**~~|Turn-On Delay Time<br>~~ee~~<br>~~ee~~<br>~~**e**e~~|–––<br>~~ee~~<br>~~ee ~~<br>~~ee~~<br>~~e~~|8.6<br>~~ee~~<br> ~~oe ~~<br>~~ee~~<br>~~e~~|–––<br>~~ee~~<br> ~~oe~~<br>~~ee~~<br>~~e~~|ns<br>~~ee~~<br>~~fo~~<br>~~i~~|VDD= 28V<br>ID= 3.0A<br>RG= 56<br>VGS= 5.0V<br>~~ee~~<br>~~fo~~<br>~~ne~~| |d(on)<br>tr<br><br>~~es~~<br>~~**es**~~|RiseTime<br>~~ee~~<br>~~**e**e~~|–––<br>~~ee~~<br>~~e~~|33<br>~~ee~~<br>~~e~~|–––<br>~~ee~~<br>~~e~~||| |td(off)<br><br>~~**es**~~|Turn-Off DelayTime<br>~~**e**e~~<br>~~s~~|–––<br>~~e~~<br>~~s~~|20<br>~~e~~<br>~~s~~|–––<br>~~e~~<br>~~s~~||| |d(off)<br>tf<br><br>~~**es**~~<br>~~es~~<br><br>~~es~~|Fall Time<br>~~**e**e~~<br>~~s~~<br>~~ee~~<br>|–––<br>~~e~~<br>~~s~~<br>~~ee~~<br>|15<br>~~e~~<br>~~s~~<br>~~ee~~<br>~~i~~|–––<br>~~e~~<br>~~s~~<br>~~ee~~<br>~~i~~||| |Ciss<br>~~es~~<br><br>~~es~~|Input Capacitance<br>~~s~~<br>~~ee~~<br>|–––<br>~~s~~<br>~~ee~~<br>|380<br>~~s~~<br>~~ee~~<br>~~i~~|–––<br>~~s~~<br>~~ee~~<br>~~i~~|pF<br>~~i~~<br>~~(r~~r<br>~~rs~~<br>~~re~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~ne~~| |Coss<br>~~es~~<br>~~—————~~<br>~~es~~|Output Capacitance<br>~~ee~~<br>~~—————~~|–––<br>~~ee~~<br>~~—————~~|66<br>~~ee~~<br>~~—————i~~|–––<br>~~ee~~<br>~~—————i~~||| |Crss<br><br>~~es~~<br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br><br>~~TY~~<br>|–––<br><br>~~TY~~<br>~~I~~<br>|36<br>~~i~~<br>~~TY~~<br>~~ID~~<br>|–––<br>~~i~~<br>~~TY~~<br>~~(r~~<br>||| |Coss<br><br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br><br>~~TY~~<br><br>|–––<br><br>~~TY~~<br>~~I~~<br><br>~~**ID** I~~<br>|220<br>~~i~~<br>~~TY~~<br>~~ID~~<br><br>~~I~~<br>|–––<br>~~i~~<br>~~TY~~<br>~~(r~~<br><br>~~I~~<br>||VGS= 0V, VDS= 1.0V,ƒ= 1.0MHz<br>~~ne~~| |Coss<br>~~es~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~TY~~<br>~~nD~~<br>|–––<br>~~TY~~<br>~~I~~<br>~~nD~~<br>~~**ID** I~~<br>|53<br>~~TY~~<br>~~ID~~<br>~~nD~~<br>~~I~~<br>|–––<br>~~TY~~<br>~~(r~~<br>~~nD~~<br>~~I~~<br><br>~~re~~||VGS= 0V, VDS= 44V,ƒ= 1.0MHz| |Coss eff.<br>~~ee~~<br>~~ee~~|Effective Output Capacitance<br><br>~~nD~~|–––<br>~~I ~~<br><br>~~**ID** I~~<br>~~nD~~|93<br> ~~ID~~<br><br>~~I~~<br>~~nD~~|–––<br>~~(r~~<br><br>~~I~~<br>~~nD~~<br>~~re~~||VGS= 0V, VDS= 0V to 44V| |**Diode Characteristics**<br>~~**ID** I~~<br>~~rs~~<br>~~ee~~<br>~~re~~<br>~~po~~||||||| |~~po~~|**Parameter **<br>|**Min.**<br>|**Typ. M**<br>|**. Max.**<br>|**Units**<br>|**Conditions**| |IS<br>~~po44)~~|Continuous Source Current<br>(Body Diode)<br>~~44)~~|–––<br>~~44)~~|–––<br>~~44)~~|5.0<br>~~44)~~|A<br>~~44)~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~&~~| |ISM<br>~~44)~~|Pulsed Source Current<br>(Body Diode)<br>~~44)~~|–––<br>~~44)~~|–––<br>~~44)~~|40<br>~~44)~~||| |VSD<br>~~SS~~|Diode Forward Voltage|–––|–––<br>~~ee~~|1.3<br>~~ee~~|V<br>~~ee~~|TJ =25°C,IS=3.0A,VGS =0V<br>~~ee~~| |trr<br>~~SS~~<br>~~rs~~|Reverse Recovery Time|–––|15<br>~~ee~~|23<br>~~ee~~|ns<br>~~ee~~|TJ= 25°C ,IF= 3.0A, VDD= 28V<br> di/dt = 100A/µs <br>~~ee~~| |Qrr<br>~~SS~~<br>~~rs~~<br>~~Rs~~|Reverse Recovery Charge<br>~~ee~~|–––|9.1<br>~~ee~~|14<br>~~ee~~|nC<br>~~ee~~|| |ton<br>~~SS~~<br>~~rs~~<br>~~Rs~~|Forward Turn-On Time<br>~~ee~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~ee~~||||| **Notes:** > Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by TJmax, Starting TJ = 25°C, L = 4.8mH, RG = 25, IAS = 3.A. VGS = 10V.Part not recommended for use above this value. > Pulse width 1.0ms; duty cycle 2%. - Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25°C, L = 4.8mH, RG = 25, IAS = 3.0A, VGS =10V. When mounted on 1 inch square copper board. - When mounted on FR-4 board using minimum recommended footprint. 2 2015-10-29 AUIRLL024Z **==> picture [495 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>VGS VGS<br>TOP 10V TOP 10V<br>9.0V 9.0V<br>7.0V 7.0V<br>5.0V 5.0V<br>4.5V 4.5V<br>10 4.0V 3.5V 10 4.0V 3.5V<br>BOTTOM 3.0V BOTTOM 3.0V<br>3.0V<br>3.0V<br>1 1<br>60µs PULSE WIDTH<br>60µs PULSE WIDTH<br>Tj = 150°C<br>Tj = 25°C<br>0.1 0.1<br>0.1 1 10 100 0.1 si 1 Esai 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 1** Typical Output Characteristics **Fig. 2** Typical Output Characteristics **==> picture [196 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>T J = 150°C<br>10 TAH<br>1 TJ = 25 ° C<br>yo<br>V DS = 10V<br>60µs PULSE WIDTH<br>0.1<br>ll<br>0 2 4 6 8 10<br>VGS, Gate-to-Source Voltage (V)<br>)<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br> **==> picture [207 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>TJ = 25°C<br>8<br>fe<br>TJ = 150°C<br>6<br>4<br>2 we<br>VDS = 10V<br>300µs PULSE WIDTH<br>po<br>0<br>0 2 4 6 8 10 12<br>ID,Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br> **Fig. 3** Typical Transfer Characteristics **Fig. 4** Typical Forward Trans conductance vs. Drain Current 3 2015-10-29 AUIRLL024Z ~~[7~~ ## ~~Cinfineon~~ **==> picture [201 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>VGS = 0V, f = 1 MHZ<br>Ciss = C gs + Cgd, C ds SHORTED<br>C rss = C gd<br>Coss = Cds + Cgd<br>1000 oe<br>Ciss<br>Coss<br>100<br>Salli Crss<br>10 RiiseWor<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br> **==> picture [205 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 6.0<br>ID= 3.0A<br>5.0 V DS = 44V<br>VDS= 28V<br>4.0 V DS = 11V or<br>3.0<br>2.0<br>PvE TTTTT<br>1.0<br>7ALLLECEE EEL<br>0.0<br>0 1 2 3 4 5 6 7 8<br> QG Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br> **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage **==> picture [505 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 100 1000<br>OPERATION IN THIS AREA<br>100 LIMITED BY R DS (on)<br>TJ = 150°C 10<br>Se ee<br>10<br>100µsec<br>1<br>a Sic a Sr<br>TJ = 25°C 0.1<br>1 1msec<br>0.01 DC 10msec<br>TA = 25°C<br>0.001 Tj = 150°C<br>V GS = 0V Single Pulse<br>P| | [ARTEL<br>0 0.0001<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1.0 10 100 1000.0<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 7** Typical Source-to-Drain Diode **Fig 8.** Maximum Safe Operating Area Forward Voltage 4 2015-10-29 ~~ee~~ AUIRLL024Z ~~|... ]~~ ## ~~Cinfineon~~ **==> picture [206 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4 eee™.<br>3<br>PT NE<br>2<br>Pt TN<br>1<br>Pt Eh<br>Pt<br>0<br>tT LA<br>25 50 75 100 125 150<br> TA , Ambient Temperature (°C)<br>ID, Drain Current (A)<br>**----- End of picture text -----**<br> **==> picture [209 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>ID = 3.0A<br>V GS = 10V<br>1.5<br>1.0<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br> **Fig 9.** Maximum Drain Current Vs. Ambient Temperature **Fig 10.** Normalized On-Resistance vs. Temperature **==> picture [423 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02<br>Se ecient 0.01 TTT R1R1 R2R2 R A 3R3 Ri (°C/W) A i (sec)<br>0.1 J J1 1 2 2 3 3 CC 5.3396 19.881 0.000805 0.706300<br>0.01 Ca CiCi= =iRiiRi 19.771 20.80000<br>SINGLE PULSE<br>0.001 ( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthja + Tc<br>0.0001 attmil LEBO cera|<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br> **Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 2015-10-29 5 ~~Cinfineon~~ AUIRLL024Z ~~|~~ **==> picture [20 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> IAS<br>**----- End of picture text -----**<br> **==> picture [201 x 443] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>L DRIVER<br>VDS<br>RG D.U.T +<br>- [V][DD]<br>7~ 20V JL IAS A<br>tp 0.01<br>H t<br>Fig 12a. Unclamped Inductive Test Circuit<br>V(BR)DSS<br>tp<br>Fig 12b. Unclamped Inductive Waveforms<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br> **Fig 12b.** Unclamped Inductive Waveforms **Fig 13a.** Basic Gate Charge Waveform **==> picture [213 x 529] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>ID<br>TOP 3.0A<br>80 ELL 0.80A<br>BOTTOM 0.69A<br>6040 NULL EEL ELLE<br>20 aN<br>PES<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>Fig 12c. Maximum Avalanche Energy<br>Vs. Drain Current<br>2.5<br>2.0<br>ID = 250µA<br>1.5<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>EAS , Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br> **Fig 14.** Threshold Voltage vs. Temperature **Fig 13b.** Gate Charge Test Circuit 6 2015-10-29 ~~Cinfineon~~ AUIRLL024Z ~~|... ]~~ **==> picture [433 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10 Duty Cycle = Single Pulse Allowed avalanche Current vs<br>avalanche pulsewidth, tav<br>assuming Tj = 25°C due to<br>avalanche losses<br>1 a 0.01 ee,<br>Be nl |<br>0.05<br>0.10<br>0.1 =OE)<br>limiaul<br>EIT<br>0.01 TT i<br>1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br> **Fig 15.** Typical Avalanche Current vs. Pulse width **==> picture [204 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>TOP Single Pulse<br>BOTTOM 1% Duty Cycle<br>20 ID = 3.0A<br>od<br>15 NO<br>10<br>NENT<br>5<br>NNT<br>TNOUNM<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> ## **Notes on Repetitive Avalanche Curves , Figures 15, 16:** **(For further info, see AN-1005 at www.infineon.com)** 1. Avalanche failures assumption: - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). - tav = Average time in avalanche. - D = Duty cycle in avalanche = tav ·f - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) **PD (ave) = 1/2 ( 1.3·BV·Iav) =** **T/ ZthJC Iav = 2** **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** **Fig 16.** Maximum Avalanche Energy vs. Temperature 7 2015-10-29 ~~=©...~~ 2015-10-29 AUIRLL024Z **Fig 17** . Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[®] Power MOSFETs **Fig 18a.** Switching Time Test Circuit **Fig 18b.** Switching Time Waveforms 8 2015-10-29 AUIRLL024Z ~~|... ]~~ ## ~~Cinfineon~~ ## **SOT-223 (TO-261AA) Package Outline** (Dimensions are shown in millimeters (inches) ## **SOT-223(TO-261AA) Part Marking Information** **==> picture [189 x 57] intentionally omitted <==** **----- Start of picture text -----**<br> LL024Z<br>a<br>i l<br>Date Code<br>Y= Year<br>WW= Work Week<br>A= Automotive, Lead Free<br>**----- End of picture text -----**<br> Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-29 ~~Cinfineon~~ AUIRLL024Z ~~|... ]~~ **SOT-223(TO-261AA) Tape and Reel** (Dimensions are shown in millimeters (inches) **==> picture [412 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 4.10 (.161)<br>0.35 (.013)<br>3.90 (.154) 1.85 (.072)<br>0.25 (.010)<br>2.05 (.080) 1.65 (.065)<br>TR 1.95 (.077)<br>7.55 (.297)<br>7.45 (.294)<br>16.30 (.641)<br>7.60 (.299) 15.70 (.619)<br>7.40 (.292)<br>1.60 (.062)<br>1.50 (.059)<br> TYP.<br>FEED DIRECTION<br>7.10 (.279) 2.30 (.090)<br>6.90 (.272) 2.10 (.083)<br>12.10 (.475)<br>11.90 (.469)<br>**----- End of picture text -----**<br> NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. **==> picture [391 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 13.20 (.519) 15.40 (.607)<br>12.80 (.504) 11.90 (.469)<br>4<br>330.00 50.00 (1.969)<br>(13.000) MIN.<br> MAX.<br>NOTES : 18.40 (.724)<br> MAX.<br>1. OUTLINE COMFORMS TO EIA-418-1.<br>2. CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) 4<br>3. DIMENSION MEASURED @ HUB. 12.40 (.488)<br>3<br>**----- End of picture text -----**<br> 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-29 |<br>AUIRLL024Z<br>~~Cinfineon~~<br>~~|... ]~~|<br>AUIRLL024Z<br>~~Cinfineon~~<br>~~|... ]~~| |---|---| |**Qualification Information**|| |**Qualification Level**<br>Automotive<br>(per AEC-Q101)<br>Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.<br>**Moisture Sensitivity Level**<br>SOT-223<br>MSL1<br>**ESD**<br>Machine Model<br>Class M1B (+/- 100V)† <br>AEC-Q101-002<br>Human Body Model<br>Class H0 (+/- 250V)†<br>AEC-Q101-001<br>Charged Device Model<br>Class C5 (+/- 1125V)† <br>AEC-Q101-005<br>**RoHS Compliant**<br>Yes<br>~~———~~|Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher| |† Highest passing voltage.|| |**Revision History**|| |**Date**<br>**Comments**|| |<br>Added "Logic Level Gate Drive" bullet in the features section on page 1|| |3/26/2014<br><br>Updated part marking on page 9|| |<br>Updated data sheet with new IR corporate template|| |10/29/2015<br><br>Updated datasheet with corporate template|| |<br>Corrected orderingtable onpage 1.|| **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2015-10-29
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →