ATP114-TL-H

**Ordering number : ENA1711A** 

## **ATP114** 

## **P-Channel Power MOSFET –60V, –55A, 16m** Ω **, Single ATPAK** 

http://onsemi.com 

## **Features** 

- ON-resistance  RDS(on)1=12mΩ(typ.) 

- 4V drive 

   - Input Capacitance  Ciss=4000pF(typ.) 

   - Halogen free compliance 

- Protection diode in 

## **Specifi cations** 

## **Absolute Maximum Ratings** at Ta=25°C 

|Parameter|Symbol|Conditions|Ratings|Unit|
|---|---|---|---|---|
|Drain-to-Source Voltage|VDSS||--60|V|
|Gate-to-Source Voltage|VGSS||±20|V|
|Drain Current(DC)|ID||--55|A|
|Drain Current(PW≤10μs)|IDP|PW≤10μs, dutycycle≤1%|--165|A|
|Allowable Power Dissipation|PD|Tc=25°C|60|W|
|Channel Temperature|Tch||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|
|Avalanche Energy (Single Pulse)*1|EAS||100|mJ|
|Avalanche Current *2|IAV||--28|A|



Note : * 1 VDD=--15V, L=200μH, IAV=--28A * 2 L≤100μH, Single pulse 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **Package Dimensions** 

unit : mm (typ) 7057-001 

## **Product & Package Information** 

- Package : ATPAK • JEITA, JEDEC : - 

- Minimum Packing Quantity : 3,000 pcs./reel 

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ATP114-TL-H<br>6.5 1.5 4.6 Packing Type: TL   Marking<br>2.6<br>0.4 0.4<br>4 ATP114<br>LOT No.<br>TL<br>Electrical Connection<br>2,4<br>2<br>1 3 0.55<br>0.8<br>0.6<br>0.4 1 : Gate<br>2.3 2.3 2 : Drain<br>1<br>3 : Source<br>4 : Drain<br>oo | oo O_ o<br>ATPAK 3<br>0.5<br>6.05<br>4.6<br>7.3<br>9.5<br>1.7<br>0.5<br>0.7<br>0.1<br>**----- End of picture text -----**<br>


Semiconductor Components Industries, LLC, 2013 **July, 2013** 

61312 TKIM/70710PA TKIM TC-00002342  No. A1711-1/7 

**ATP114** 

## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Drain-to-Source Breakdown Voltage|V(BR)DSS|ID=--1mA, VGS=0V|--60|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS=--60V, VGS=0V|||--1|μA|
|Gate-to-Source Leakage Current|IGSS|VGS=±16V, VDS=0V|||±10|μA|
|Cutoff Voltage|VGS(off)|VDS=--10V, ID=--1mA|--1.2||--2.6|V|
|Forward Transfer Admittance|| yfs||VDS=--10V, ID=--28A||65||S|
|Static Drain-to-Source On-State Resistance|RDS(on)1|ID=--28A, VGS=--10V||12|16|mΩ|
||RDS(on)2|ID=--14A, VGS=--4.5V||15|21|mΩ|
||RDS(on)3|ID=--7A, VGS=--4V||16.5|24|mΩ|
|Input Capacitance|Ciss|VDS=--20V, f=1MHz||4000||pF|
|Output Capacitance|Coss|||400||pF|
|Reverse Transfer Capacitance|Crss|||315||pF|
|Turn-ON Delay Time|td(on)|See specif ed Test Circuit.||19||ns|
|Rise Time|tr|||200||ns|
|Turn-OFF Delay Time|td(off)|||450||ns|
|Fall Time|tf|||300||ns|
|Total Gate Charge|Qg|VDS=--30V, VGS=--10V, ID=--55Ap||92||nC|
|Gate-to-Source Charge|Qgs|||15||nC|
|Gate-to-Drain “Miller” Charge|Qgd|||15.5||nC|
|Diode Forward Voltage|VSD|IS=--55A, VGS=0V||--0.95|--1.5|V|



## **Switching Time Test Circuit** 

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VIN VDD= --30V<br>0V<br>--10V<br>ID= --28A<br>VIN RL=1.07 Ω<br>D VOUT<br>PW=10 μ s<br>D.C. ≤ 1%<br>G<br>ATP114<br>P.G 50 Ω S<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Ordering Information**||||
|---|---|---|---|
|Device|Package|Shipping|memo|
|ATP114-TL-H|ATPAK|3,000pcs./reel|Pb Free and Halogen Free|



No. A1711-2/7 

**ATP114** 

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ID  --  VDS ID  --  VGS<br>--55 Tc=25°C --80 VDS= --10V<br>--50<br>--70<br>--45<br>--60<br>--40<br>--35 --50<br>--30<br>--40<br>--25<br>--20 --30<br>--15<br>--20<br>--10<br>--10<br>--5<br>0 0<br>0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0<br>Drain-to-Source Voltage, VDS  --  V IT15702 Gate-to-Source Voltage, VGS  --  V IT15703<br>RDS(on)  --  VGS RDS(on)  --  Tc<br>35 Tc=25°C 35 Single pulse<br>Single pulse<br>30<br>30<br>ID= --7A --14A 25<br>25<br>--28A<br>20<br>20<br>15<br>15<br>10<br>10<br>5<br>5 0<br>0 --2 --4 --6 --8 --10 --12 --14 --16 --60 --40 --20 0 20 40 60 80 100 120 140 160<br>Gate-to-Source Voltage, VGS  --  V IT15704 Case Temperature, Tc  --  °C IT15705<br>| yfs  |  --  ID IS  --  VSD<br>2 2<br>VDS= --10V --100 V GS =0V<br>100 Single pulse 5 [7] Single pulse<br>3<br>7 2<br>5 --10<br>5 [7]<br>3 3<br>2<br>2<br>--1.0<br>5 [7]<br>10 3<br>2<br>7<br>--0.1<br>5<br>5 [7]<br>3<br>3 2<br>2 --0.01<br>5 [7]<br>3<br>1.0 2<br>7 --0.001<br>--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4<br>Drain Current, ID  --  A IT15706 Diode Forward Voltage, VSD  --  V IT15707<br>SW Time  --  ID Ciss,  Coss,  Crss  --  VDS<br>1000 10000<br>f=1MHz<br>7 7<br>5 5<br>3 3<br>2<br>2<br>100<br>1000<br>7<br>7<br>5<br>5<br>3<br>td(on) 3<br>2<br>2<br>VDD= --30V<br>10<br>7 VGS= --10V 100<br>--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5 7--100 2 0 --10 --20 --30 --40 --50 --60<br>Drain Current, ID  --  A IT15708 Drain-to-Source Voltage, VDS  --  V IT15709<br>tf<br>Ciss<br>VGS= --2.5V<br>td(off)<br>tr<br>Crss<br>Coss<br>--3.0V<br>VGS= --10.0V, ID= --28A<br>VGS= --4.0V, ID= --7A<br>VGS= --4.5V, ID= --14A<br>°C<br>75<br>°C<br>Tc= --25<br>°C<br>25<br>--3.5V<br>--6.0V<br>--4.0V<br>--8.0V<br>25°C<br>--4.5V<br>--25°C<br>--10.0V<br>Tc=75°C<br>°C<br>25<br>°C<br>Tc=75<br>--16.0V<br>°C<br>75<br>°C<br>Tc= --25<br>°C<br>--25<br>°C<br>25<br>Drain Current, ID  --  A Drain Current, ID  --  A<br>Ω Ω<br>Static Drain-to-Source On-State Resistance, RDS(on)  --  m Static Drain-to-Source On-State Resistance, RDS(on)  --  m<br>|  --  S<br>fs<br>y<br>|<br>Source Current, IS  --  A<br>Forward Transfer Admittance,<br>Ciss,  Coss,  Crss  --  pF<br>Switching Time, SW Time  --  ns<br>**----- End of picture text -----**<br>


No. A1711-3/7 

**ATP114** 

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VGS  --  Qg A S O<br>--10 5<br>VDS= --30V 3<br>--9 ID= --55A 2  I DP = --165A (PW≤10μs)<br>--8 --100<br>7 ID= --55A<br>5<br>--7<br>3<br>2<br>--6<br>--10<br>--5 75 Operation in<br>--4 3 this area is<br>2 limited by RDS(on).<br>--3<br>--1.0<br>7<br>--2 5<br>3<br>--1 2 Tc=25 ° C<br>0 --0.1 Single pulse<br>0 10 20 30 40 50 60 70 80 90 100 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100<br>Total Gate Charge, Qg  --  nC IT15710 Drain-to-Source Voltage, VDS  --  V IT15512<br>PD  --  Tc EAS  --  Ta<br>70 120<br>60<br>100<br>50<br>80<br>40<br>60<br>30<br>40<br>20<br>20<br>10<br>0 0<br>0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175<br>Case Temperature, Tc  --  °C IT15513 Ambient Temperature, Ta  --  °C IT15179<br>100ms<br>1ms<br>10ms<br>100<br>μs<br>10<br>μs<br>DC operation<br>Drain Current, ID  --  A<br>Gate-to-Source Voltage, VGS  --  V<br>Allowable Power Dissipation, PD  --  W Avalanche Energy derating factor  --  %<br>**----- End of picture text -----**<br>


No. A1711-4/7 

**ATP114** 

**Taping Specifi cation** ATP114-TL-H 

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No. A1711-5/7 

**ATP114** 

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Outline Drawing<br> ATP114-TL-H<br>**----- End of picture text -----**<br>


## **Land Pattern Example** 

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Mass (g) Unit Unit: mm<br>0.266<br>* For reference [mm]<br>6.5<br>1.5<br>2.3 2.3<br>6.7<br>2<br>1.6<br>**----- End of picture text -----**<br>


No. A1711-6/7 

**ATP114** 

Note on usage : Since the  ATP114 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

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PS No. A1711-7/7