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AP9928GEO-HF-3TR
Dual MOSFET, N Channel, 20 V, 5 A, 0.023 ohm, TSSOP, Surface Mount
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- Manufacturer: ADVANCED POWER ELECTRONICS CORP
- Product type: Dual MOSFETs
- No. of Pins: 8Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 1W
- Rds(on) Test Voltage: 4.5V
- On Resistance Rds(on): 0.023ohm
- Transistor Case Style: TSSOP
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 5A
- Power Dissipation N Channel: 1W
- Power Dissipation P Channel: 1W
- Gate Source Threshold Voltage Max: 500mV
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 5A
- Continuous Drain Current Id P Channel: 5A
- Drain Source On State Resistance N Channel: 0.023ohm
- Drain Source On State Resistance P Channel: 0.023ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.225 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**AP9928GEO Pb Free Plating Product Advanced Power** _**N-CHANNEL ENHANCEMENT MODE**_ **Electronics Cor .** _**POWER MOSFET**_ **p ▼ Low on-resistance S2 G2** BVDSS 20V **D2[S2] ▼ Capable of 2.5V gate drive** RDS(ON) 23mΩ **G1 S1 ▼** ~~_—_~~ **Optimal DC/DC battery application TSSOP-8 D1 S1** ~~_—~~ ID 5A **Description** D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G1 G2 ruggedized device design, ultra low on-resistance and cost-effectiveness.
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D1 D2<br>G1 G2<br>S1 S2<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|VDS|Drain-Source Voltage|20|V|
|VGS|Gate-Source Voltage|±12|V|
|ID@TA=25℃|Drain Current3, VGS@ 4.5V|5|A|
|ID@TA=70℃|Drain Current3, VGS@ 4.5V|3.5|A|
|IDM|Pulsed Drain Current1|25|A|
|PD@TA=25℃|Total Power Dissipation|1|W|
||Linear DeratingFactor|0.008|W/℃|
|TSTG|Storage Temperature Range|-55 to 150|℃|
|TJ|OperatingJunction Temperature Range|-55 to 150|℃|
## **Thermal Data**
|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-a|Thermal Resistance Junction-ambient3<br>Max.|125|℃/W|
_Data and specifications subject to change without notice_
_**200206031**_
## **AP9928GEO**
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## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=250uA|20|-|-|V|
|ΔBVDSS/ΔTj|Breakdown Voltage Temperature Coefficient|Reference to 25℃, ID=1mA|-|0.02|-|V/℃|
|RDS(ON)|Static Drain-Source On-Resistance2|VGS=4.5V, ID=5A|-|-|23|mΩ|
|||VGS=2.5V, ID=2A|-|-|29|mΩ|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250uA|0.5|-|-|V|
|gfs|Forward Transconductance|VDS=10V, ID=5A|-|21|-|S|
|IDSS|Drain-Source Leakage Current (Tj=25oC)|VDS=20V, VGS=0V|-|-|1|uA|
||Drain-Source Leakage Current (Tj=70oC)|VDS=20V ,VGS=0V|-|-|25|uA|
|IGSS|Gate-Source Leakage|VGS=±12V|-|-|±10|uA|
|Qg|Total Gate Charge2|ID=5A<br>VDS=10V<br>VGS=4.5V|-|15.9|-|nC|
|Qgs|Gate-Source Charge||-|1.5|-|nC|
|Qgd|Gate-Drain("Miller")Charge||-|7.4|-|nC|
|td(on)|Turn-on DelayTime2|VDS=10V<br>ID=1A<br>RG=3.3Ω,VGS=4.5V<br>RD=10Ω|-|6.2|-|ns|
|tr|Rise Time||-|9|-|ns|
|td(off)|Turn-off DelayTime||-|30|-|ns|
|tf|Fall Time||-|11|-|ns|
|Ciss|Input Capacitance|VGS=0V<br>VDS=20V<br>f=1.0MHz|-|530|-|pF|
|Coss|Output Capacitance||-|245|-|pF|
|Crss|Reverse Transfer Capacitance||-|125|-|pF|
## **Source-Drain Diode**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current ( Body Diode )|VD=VG=0V,VS=1.2V|-|-|0.83|A|
|VSD|Forward On Voltage2|Tj=25℃,IS=5A,VGS=0V|-|-|1.2|V|
## **Notes:**
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in[2] copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
**AP9928GEO**
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40 35<br>35 T A =25 [o] C 4.5V 30 T A =150 [o] C 4.5V<br>3.5V 3.5V<br>30 3.0V 25 3.0V<br>2.5V 2.5V<br>25<br>20<br>20<br>15<br>15<br>10 10 V G =2.0V<br>V G =2.0V<br>5 5<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)<br> , Drain Current (A)<br>ID , Drain Current (A)ID<br>**----- End of picture text -----**<br>
**Fig 1. Typical Output Characteristics**
**Fig 2. Typical Output Characteristics**
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95<br> I D = 5A<br>T A =25 [o] C<br>65<br>35<br>5<br>1 2 3 4 5<br>V GS , Gate-to-Source Voltage (V)<br>Ω )<br> (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
**Fig 3. On-Resistance v.s. Gate Voltage**
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1.9<br> I D = 5A<br>V G = 4.5V<br>1.5<br>1.1<br>0.7<br>0.3<br>-50 0 50 100 150<br>T j , Junction Temperature ( [o] C)<br>DS(ON)<br>Normalized R<br>**----- End of picture text -----**<br>
**Fig 4. Normalized On-Resistance**
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10<br>1<br>T j =150 [o] C<br>0.1<br>0.01<br>0.2 0.5 0.8 1.1<br>V SD , Source-to-Drain Voltage (V)<br> (A)IS<br>**----- End of picture text -----**<br>
**Fig 5. Forward Characteristic of Reverse Diode**
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1.6<br>1.2<br>0.8<br>0.4<br>0<br>-50 0 50 100 150<br>T j , Junction Temperature ( [o] C)<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>
**Fig 6. Gate Threshold Voltage v.s. Junction Temperature**
## **AP9928GEO**
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f=1.0MHz<br>8 1000<br> I D = 5A<br>C iss<br>6 V V DSDS =10V =15V C oss<br>V DS =20V C rss<br>4 100<br>2<br>0 10<br>0 5 10 15 20 25 1 7 13 19 25<br>Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
**Fig 7. Gate Charge Characteristics**
**Fig 8. Typical Capacitance Characteristics**
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100 1<br>Duty factor = 0.5<br>10 100us 0.2<br>0.1 0.1<br>1ms<br>0.05<br>1 10ms 0.02<br>100ms 0.01 PDM<br>0.01 t<br>Single Pulse T<br>0.1 T A =25 [o] C 1s Duty Factor = t/T<br>Single Pulse DC Peak T Rthja=208 j = P [o] C/W DM x Rthja + Ta<br>0.01 0.001<br>0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000<br>V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>)thja<br>(A)<br>ID<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
**Fig 9. Maximum Safe Operating Area**
**Fig 10. Effective Transient Thermal Impedance**
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VDS<br>90%<br>10%<br>VGS<br>td(on) [t] r td(off) tf<br>**----- End of picture text -----**<br>
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VG<br>QG<br>5V<br>QGS QGD<br>Charge Q<br>**----- End of picture text -----**<br>
**Fig 11. Switching Time Waveform**
**Fig 12. Gate Charge Waveform**
Updated at February 9, 2023
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