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AFGHL40T65SPD
IGBT, 80 A, 1.85 V, 267 W, 650 V, TO-247, 3 Pins
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- Manufacturer: ONSEMI
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:267W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3
- MSL: MSL 1 - Unlimited
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 267W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 2.34 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
AFGHL40T65SPD ## Field Stop Trench IGBT ## 40 A, 650 V ## **Description** Using the novel field stop 3[rd] generation IGBT technology, AFGHL40T65SPD offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation. ## **Features** - AEC−Q101 Qualified - Low Saturation Voltage: VCE(Sat) = 1.85 V (Typ.) @IC = 40 A - 100% Of The Part Are Dynamically Tested (Note 1) - Short Circuit Ruggedness > 5 S @ 25°C - Maximum Junction Temperature: TJ = 175°C - Fast Switching - Tight Parameter Distribution - Positive Temperature Co−efficient for Easy Parallel Operating - Co−Packed With Soft And Fast Recovery Diode ## **Typical Applications** - Onboard Charger ## **www.onsemi.com** **==> picture [156 x 220] intentionally omitted <==** **----- Start of picture text -----**<br> |||| |---|---|---| |VCES|Eon|VCE(Sat)| |650 V|1.16 mJ|1.85 V| |C| |G| |E| |TO−247−3L| |CASE 340CX| **----- End of picture text -----**<br> - Air Conditioner Compressor - PTC Heater ## **MARKING DIAGRAM** - Motor Drivers - Other Automotive Power−Train Applications **==> picture [46 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> &Y&Z&3&K<br>AFGHL<br>40T65SPD<br>**----- End of picture text -----**<br> $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3−Digit Data code &K = 2−Digit Lot Traceability code AFGHL40T65SPD = Specific Device Code **ORDERING INFORMATION Device Package Shipping** AFGHL40T65SPD TO−247−3L 30 Units / Rail ~~——~~ Publication Order Number: **AFGHL40T65SPD/D** **1** © Semiconductor Components Industries, LLC, 2017 **August, 2018 − Rev.0** ## **AFGHL40T65SPD** **ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C, Unless otherwise noted) |**ABSOLUTE**|**MAXIMUM RATINGS**(TC= 25°C, Unless otherwise noted)||| |---|---|---|---| |**Symbol**|**Description**|**Ratings**|**Units**| |VCES|Collector to Emitter Voltage|650|V| |VGES|Gate to Emitter Voltage|±20|V| ||Transient Gate to Emitter Voltage|±30|V| |IC|Collector Current @ TC= 25°C|80|A| ||Collector Current @ TC= 100°C|40|| |ICM|Pulsed Collector Current (Note 2)|120|A| |IF|Diode Forward Current @ TC= 25°C|40|A| ||Diode Forward Current @ TC= 100°C|20|| |IFM|Pulsed Diode Maximum Forward Current (Note 2)|120|A| |PD|Maximum Power Dissipation @ TC= 25°C|267|W| ||Maximum Power Dissipation @ TC= 100°C|134|| |SCWT|Short Circuit Withstand Time @ TC= 25°C|5|�s| |TJ|Operating Junction Temperature|−55 to +175|°C| |Tstg|Storage Temperature Range|−55 to +175|°C| |TL|Maximum Lead Temp. For soldering<br>Purposes,⅛” from case for 5 seconds|300|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 20 � , Inductive Load 2. Repetitive rating: pulse width limited by max. Junction temperature ## **THERMAL CHARACTERISTICS** |**Symbol**|**Rating**|**Max.**|**Units**| |---|---|---|---| |R�JC|Thermal Resistance junction to case, for IGBT|0.31|�C/W| |R�JC|Thermal Resistance junction to case, for Diode|1.19|�C/W| |R�JA|Thermal Resistance junction to Ambient|40|�C/W| **www.onsemi.com** **2** ## **AFGHL40T65SPD** **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERIST**|**ICS**(TC= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---|---| |**Parameter**|**Test Conditions**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**| |**OFF CHARACTERISTICS**||||||| |Collector−emitter breakdown volt-<br>age, gate−emitter short−circuited|VGE = 0 V, IC = 1mA|BVCES|650|−|−|V| |Temperature Coefficient of<br>Breakdown Voltage|VGE = 0 V, IC = 1mA||−|0.6|−|V/�C| |Collector−emitter cut−off current,<br>gate−emitter short−circuited|VGE= 0 V, VCE= 650 V<br>VGE= 0 V, VCE= 650 V, TJ =175�C|ICES|−<br>−|−<br>750|250<br>−|�A| |Gate leakage current, collector−<br>emitter short−circuited|VGE= 20 V , VCE= 0 V|IGES|−|−|±400|nA| |**ON CHARACTERISTICS**||||||| |Gate−emitter threshold voltage|VGE= VCE, IC= 40mA|VGE(th)|4.0|5.0|7.5|V| |Collector−emitter saturation voltage|VGE= 15 V, IC= 40 A<br>VGE= 15 V, IC= 40 A, TJ= 175�C|VCE(sat)|1.4<br>−|1.85<br>2.51|2.4<br>−|V| |**DYNAMIC CHARACTERISTICS**||||||| |Input capacitance|VCE= 30 V, VGE= 0 V, f = 1 MHz|Cies|−|1518|−|pF| |Output capacitance||Coes|−|91|−|| |Reverse transfer capacitance||Cres|−|15|−|| |Gate charge total|VCE= 400 V, IC= 40 V, VGE= 15 V|Qg|−|36|−|nC| |Gate to emitter charge||Qge|−|11|−|| |Gate to collector charge||Qgc|−|12|−|| |**SWITCHING CHARACTERISTICS**||||||| |Turn−on delay time|TC= 25�C<br>VCC= 400 V, IC= 40 A<br>Rg = 6�<br>VGE= 15 V<br>Inductive Load, TC =25�C|td(on)|−|18|−|ns| |Rise time||tr|−|42|−|| |Turn−off delay time||td(off)|−|35|−|| |Fall time||tf|−|10|−|| |Turn−on switching loss||Eon|−|1.16|−|mJ| |Turn−off switching loss||Eoff|−|0.27|−|| |Total switching loss||Ets|−|1.43|−|| |Turn−on delay time|TC= 175�C<br>VCC= 400 V, IC= 40 A<br>Rg = 6�<br>VGE= 15 V<br>Inductive Load|td(on)|−|16|−|ns| |Rise time||tr|−|40|−|| |Turn−off delay time||td(off)|−|37|−|| |Fall time||tf|−|11|−|| |Turn−on switching loss||Eon|−|1.59|−|mJ| |Turn−off switching loss||Eoff|−|0.42|−|| |Total switching loss||Ets|−|2.01|−|| |**DIODE CHARACTERISTICS**||||||| |Forward voltage|IF= 20A<br>IF= 20A, TJ= 175�C|VF|1.4<br>−|2.2<br>1.9|2.7<br>−|V| |Reverse Recovery Time|TJ= 25�C<br>IF = 20 A, diF/dt = 200 A/�s|trr|−|35|−|ns| |Reverse Recovery Charge||Qrr|−|58|−|�C| **www.onsemi.com** **3** **AFGHL40T65SPD** ## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERIST**|**ICS**(TC= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---|---| |**Parameter**|**Test Conditions**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**| |**DIODE CHARACTERISTICS**||||||| |Reverse Recovery Time|TJ= 175�C<br>IF = 20 A, diF/dt = 200 A/�s|trr|−|214|−|ns| |Reverse Recovery Charge||Qrr|−|776|−|�C| |Reverse Recovery Energy||Erec|−|51|−|�J| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **4** **AFGHL40T65SPD** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [197 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>TC = 25oC 20V<br>15V<br>12V<br>90<br>10V<br>60<br>30<br>VGE [ = 8V]<br>0<br>0 1 2 3 4 5 6<br>Collector−Emitter Voltage, VCE [V]<br> [A]<br>C<br>Collector Current, I<br>**----- End of picture text -----**<br> **Figure 1. Typical Output Characteristics** **==> picture [195 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>Common Emitter<br>VGE = 15V<br>TC = 25oC<br>90 TC = 175oC<br>60<br>30<br>0<br>0 1 2 3 4 5 6<br>Collector−Emitter Voltage, VCE [V]<br> [A]<br>C<br>Collector Current, I<br>**----- End of picture text -----**<br> **Figure 3. Typical Saturation Voltage Characteristics** **==> picture [185 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>Common Emitter<br>VGE [ = 15V]<br>4<br>80A<br>3<br>40A<br>2<br>IC = 20A<br>1<br>−100 −50 0 50 100 150 200<br>Collector−Emitter Case Temperature, TC [ [o] C]<br> [V]<br>CE<br>Collector−Emitter Voltage, V<br>**----- End of picture text -----**<br> **Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level** **==> picture [208 x 373] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>TC = 175oC<br>20V<br>15V<br>90<br>12V<br>60<br>10V<br>30<br>VGE [ = 8V]<br>0<br>0 1 2 3 4 5 6<br>Collector−Emitter Voltage, VCE [V]<br>Figure 2. Typical Output Characteristics<br>120<br>Common Emitter<br>VCE = 20V<br>TC = 25oC<br>90 o<br>TC = 175 C<br>60<br>30<br>0<br>2 4 6 8 10 12 14 16<br>Gate−Emitter Voltage,VGE [V]<br> [A]<br>C<br>Collector Current, I<br> [A]<br>C<br>Collector Current, I<br>**----- End of picture text -----**<br> **Figure 4. Transfer Characteristics** **==> picture [182 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> Common Emitter<br>TC = −40oC<br>80A<br>IC = 20A<br>40A<br>Gate−Emitter Voltage, VGE [V]<br> [V]<br>CE<br>V<br>,<br>Collector−Emitter Voltage<br>**----- End of picture text -----**<br> **Figure 6. Saturation Voltage vs. VGE** **www.onsemi.com** **5** **AFGHL40T65SPD** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [182 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>Common Emitter<br>TC = 25oC<br>16<br>12<br>8<br>IC = 20A 40A 80A<br>4<br>0<br>4 8 12 16 20<br>Gate−Emitter Voltage, VGE [V]<br> [V]<br>CE<br>Collector−Emitter Voltage V,<br>**----- End of picture text -----**<br> **Figure 7. Saturation Voltage vs. VGE** **==> picture [201 x 363] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Com m on E m itter<br>VGE = 0V, f = 1MHz<br>TC = 25oC<br>Cies<br>1000<br>Coes<br>100 C res<br>10<br>11 0 30<br>Collector−Emitter Voltage, VCE [V]<br>Figure 9. Capacitance Characteristics<br>300<br>100<br>10 � s<br>1 0 0 � s<br>10<br>1ms<br>10 ms<br>DC<br>1 *Notes:<br> 1. TC = 25 [o] C<br> 2. TJ = 175 [o] C<br> 3. Single Pulse<br>0.1<br>1 10 100 1000<br>Collector−Emitter Voltage, VCE [V]<br>Capacitance [pF]<br> [A]c<br>Collector Current, I<br>**----- End of picture text -----**<br> **Figure 11. SOA Characteristics** **==> picture [205 x 370] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>Common Emitter<br>TC = 175oC<br>16<br>12<br>8<br>80A<br>40A<br>IC = 20A<br>4<br>0<br>4 8 12 16 20<br>Gate−Emitter Voltage, VGE [V]<br>Figure 8. Saturation Voltage vs. VGE<br>15<br>Common Emitter<br>TC = 25oC VCC [ = 200V] 300V<br>12<br>400V<br>9<br>6<br>3<br>0<br>0 10 20 30 40<br>Gate Charge, Q g [nC]<br> [V]<br>CE<br>Collector−Emitter Voltage, V<br> [V]<br>GE<br>Gate−Emitter Voltage, V<br>**----- End of picture text -----**<br> **Figure 10. Gate charge Characteristics** **==> picture [205 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>100<br>10<br>Safe Operating Area<br>VGE = 15V, TC = 175oC<br>1<br>1 10 100 1000<br>Collector−Emitter Voltage, VCE [V]<br> [A]<br> C<br>Collector Current, I<br>**----- End of picture text -----**<br> **Figure 12. Turn off Switching SOA Characteristics** **www.onsemi.com** **6** **AFGHL40T65SPD** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [192 x 372] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>100<br>tr<br>td(on)<br>10<br>Common Emitter<br>VCC = 4 00V, VGE = 15V<br>IC = 40A<br>TC = 25oC<br>TC = 175oC<br>1<br>0 10 20 30 40 50<br>Gate Resistance, RG [ � ]<br>Figure 13. Turn−on Characteristics vs. Gate<br>Resistance<br>200<br>Common Emitter<br>VGE = 15V, RG = 6 �<br>TC = 25oC<br>100 TC = 175oC tr<br>td(on)<br>10<br>5<br>20 40 60 80<br>Collector Current, IC [A]<br>Switching Time [ns]<br>Switching Time [ns]<br>**----- End of picture text -----**<br> **Figure 13. Turn−on Characteristics vs. Gate Resistance** **Figure 15. Turn−on Characteristics vs. Collector Current** **==> picture [199 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 20000<br>Common Emitter<br>10000 V CC = 400V, V GE = 15V<br>IC = 40A<br>TC = 25oC<br>TC = 175oC Eon<br>1000 Eoff<br>100<br>0 10 20 30 40 50<br>Gate Resistance, RG [ � ]<br>Switching Loss [mJ]<br>**----- End of picture text -----**<br> **Figure 17. Switching Loss vs Gate Resistance** **==> picture [208 x 586] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Common Emitter<br>VCC = 400V, VGE = 15V<br>IC = 40A<br>TC = 25oC<br>TC = 175oC<br>100 td(off)<br>tf<br>10<br>0 10 20 30 40 50<br>Gate Resistance, R G [ � ]<br>Figure 14. Turn−on Characteristics vs. Gate<br>Resistance<br>1000<br>Common Emitter<br>VGE = 15V, RG = 6 �<br>TC = 25oC<br>100 TC = 175oC<br>tf<br>td(off)<br>10<br>1<br>20 40 60 80<br>Collector Current, I C [A]<br>Figure 16. Turn−off Characteristics vs. Collector<br>Current<br>20000<br>Common Emitter<br>10000 VGE = 15V, RG = 6 �<br>TC = 25oC E<br>TC = 175oC on<br>E<br>off<br>1000<br>100<br>30 60<br>Collector Current, IC [A]<br>Switching Time [ns]<br>Switching Time [ns]<br>Switching Loss [mJ]<br>**----- End of picture text -----**<br> **Figure 16. Turn−off Characteristics vs. Collector Current** **Figure 18. Switching Loss vs Collector Current** **www.onsemi.com** **7** **AFGHL40T65SPD** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [184 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>100<br>TJ = 125oC<br>10 T J = 175oC<br>TC = 25 [o] C<br>TC = 75 [o] C<br>TJ = 75oC T C = 125 [o] C<br>TJ = 25oC TC = 175 [o] C<br>1<br>012345<br>Forward Voltage, VF [V]<br> [A]<br>F<br>Forward Current, I<br>**----- End of picture text -----**<br> **Figure 19. Forward Characteristics** **==> picture [195 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000 TC = 175oC<br>100 T C = 125oC<br>10<br>1<br>0.1 TC = 25oC<br>0.01<br>50 200 400 600 650<br>Reverse Voltage, V R [V]<br>A]<br>�<br> [<br> R<br>Reverse Current, I<br>**----- End of picture text -----**<br> **Figure 20. Reverse Current** **==> picture [197 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 800<br>TC = 25 [o] C<br>TC = 175 [o] C<br>600<br>400<br>di/dt = 200A/ � s di/d t = 100 A � / s<br>200<br>0<br>0 10 20 30 40 50<br>Forward Current, IF [A]<br> [nC]<br>rr<br>Stored Recovery Charge, Q<br>**----- End of picture text -----**<br> **Figure 21. Stored Charge** **==> picture [205 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>TC = 25 [o] C<br>250 TC = 175 [o] C ---<br>200<br>150<br>di/dt = 100A/ � s<br>di/dt = 200A/ � s<br>100<br>50<br>0<br>0 10 20 30 40 50<br>Forward Current, IF [A]<br> [ns]<br>rr<br>Reverse Recovery Time, t<br>**----- End of picture text -----**<br> **Figure 22. Reverse Recovery Time** **==> picture [188 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>TC = 25 [o] C<br>TC = 175 [o] C di/dt = 200A/ � s<br>6<br>di/dt = 100A/ � s<br>4<br>di/dt = 200A/ � s<br>2<br>di/dt = 100A/ � s<br>0<br>0 10 20 30 40<br>Forward Current, IF [ [A]]<br> [A]<br>Reverse Recovery Currnet, Irr<br>**----- End of picture text -----**<br> **Figure 23. Reverse Recovery Current** **www.onsemi.com** **8** **AFGHL40T65SPD** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [8 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>**----- End of picture text -----**<br> **==> picture [479 x 452] intentionally omitted <==** **----- Start of picture text -----**<br> Cs ee 5<br>0.5<br>0.1 : wl ee<br>0.2<br>‘ag er ry ne eee ae Pee SO De rd ee ee eT)<br>0.1 — C THT OT TT TTTeeTT eT ea<br>OF TT TT a a tt a tap tt aa<br>0.0 —_ o Pypoe ' teinrotten sei) rttortramborree ce1 Horutaureterials a 1orotrrretceitals 21 en retire or1 es<br>0.0 Gunn oT aden tortie toro taee boo tadat toad Poa eat<br>a- #7 Horoernee ' rn i) Horotrree i) torr uure i) robotrree 1 porter 1<br>0.01 0.0 Sea eo oe ae ea ae a a oe Oa a ee 8 oo ee eed ow | i | [ |<br>-- Single bee- -r- t tePW- mr- e t er- QO - e t aef- - ee rR ae] - t, |~< l<br>7-TT Pulse bonne aeeborerre es ee eenePoeen ednae ee 1 es1 1rtii| Duty Factor,< ty >|D =t1/t2<br>1E−3 Pot,TT TTot eftTaep or ren) od tee aen,at Peak - Tj=Pdmx 2Zthjeic ++ To;i<br>i) ee ee Oe 1 es ee ee i) ee ee 1 ee ee Oe i ee ee 1 ee ee Oe i) ee ee ee<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1] 10 [2]<br>Rectangular Pulse Duration [sec]<br>Figure 24. Transient Thermal Impedance of IGBT<br>10<br>es ee ee ee ed er es ee a ae ee aes<br>Soa sae POD aaa PO aaa PS aaa<br>en [a][ 8] DDee De aaa Dl aaa ee PF ll a aa eres<br>DD<br>i i de eeea<br>boron uneg boone boon nuded boon evan too Poo ee<br>1 SEE ——— rns— i<br>0.5 355 Jt uracb 2 eS eeegO i Sa Trae DY Oe a OOa amTDA SN OOOAS HDRES a DTI SO OOA HD osOO FE GAG oe<br>aa rit QO - -1- a -aritt - rit aarti - rit aa rite - rit ata riti - sit amarite<br>0.20.1 ——4-4eAerf e es Oeb o b huede e ee e sboronneanee e e ee rseeboreden en er e s Oeborone e ee e es Seesboronee ee<br>0.1<br>0.0 I St) at) et ee a) Sei e<br>f Mm IIT Pao TT aa TD aa Pt aa ee PDD aa Trl aa cts<br>0.0 aSea a aeen deen Deee ee eeDe P '1<br>posure te cra 2 ech te eh era LM '<br>0.0 borunen boone boone nae bono tnaned boron uuegs '<br>0.01 Single a f ee ae i ee ee ' ee ee rd) f tortton t, t |~« 1\<br>Pulse<br>= nt] aaa == -toete Saatia a a eb == -t2mre aJS oota a eb =eee-'o dotsa a a ebbia == -lo2wie Jd4 oseat a et D)ity Factor,r D =t1/A2 '1<br>Sea Peak T; = Pdm x Zthic + T-:<br>1E−3 bo ee ee ee) to eee eee<br>−5 −4 −3 −2 −1 0 1 2<br>10 10 10 10 10 10 10 10<br>Thermal Response [Zthjc]<br>Thermal Response [Zthjc]<br>**----- End of picture text -----**<br> **Figure 25. Transient Thermal Impedance of Diode** **www.onsemi.com** **9** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **TO−247−3LD** CASE 340CX ISSUE O DATE 27 JUN 2018 **==> picture [481 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC |e | ~ | 556] ~ |<br>MARKING DIAGRAM* L a 19.75 | 20.00 | 20.25<br>L o t or [sr | 358 | 365 |<br>T 7 | a | 5.34 | 546 | 5.58 |<br>XXXXXXXXX<br>AYWWG XXXXXA = Specific Device Code= Assembly Location | ob | 1.17 | 1.26 | 1.35 |<br>—_—| Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>*This information is generic. Please refer to 13.08| ~ | ~ |<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”, may °<br>or may not be present. Some products may<br>not follow the Generic Marking.<br>| dp1_| 1281|6.60 | 6.80 ~ | 7.00 ~ | |<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON93302G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>**----- End of picture text -----**<br> **DESCRIPTION: TO−247−3LD** **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada **Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative **Europe, Middle East and Africa Technical Support:** Phone: 421 33 790 2910 ◊
Updated at June 10, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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