Image not available
Illustrative purposes only
ACST1220H-8BTR
Triac, 800 V, 12 A, TO-252 (DPAK), 1 V, 110 A, 30 mA
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: STMICROELECTRONICS
- Product type:
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 3Pins
- Product Range: ACST Series
- Triac Case Style: TO-252 (DPAK)
- Thyristor Mounting: Surface Mount
- Holding Current Max: 30mA
- On State RMS Current: 12A
- Peak On State Voltage: 1.55V
- Gate Trigger Voltage Max: 1V
- Operating Temperature Max: 150°C
- Peak Non Repetitive Surge Current: 110A
- Peak Repetitive Off State Voltage: 800V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.471 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**ACST1220H-8B** Datasheet **==> picture [135 x 36] intentionally omitted <==** ## 12 A overvoltage protected AC Switch **==> picture [95 x 87] intentionally omitted <==** **----- Start of picture text -----**<br> OUT<br>G<br>COM<br>**----- End of picture text -----**<br> ## **Features** - 12 A AC Switch with self-overvoltage protection - High junction temperature: Tj max. = 150 °C - Symmetric 800 V blocking voltage - DPAK power package - Snubberless performance: - High static immunity dV/dt = 1 000 V/μs at 150 °C **==> picture [25 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> DPAK<br>**----- End of picture text -----**<br> **==> picture [84 x 95] intentionally omitted <==** **----- Start of picture text -----**<br> OUT<br>G<br>COM<br>**----- End of picture text -----**<br> - Strong dynamic commutation: (dI/dt)c = 9 A/ms at 150 °C (lowercase) - Halogen-free molding, lead-free plating - ECOPACK2 power package ## **Applications** - Inrush current limiting circuits - Heating resistor control, solid state relays - Capacitor discharge circuit ## **Description** The ACST1220H-8B belongs to the ACST power switch family. This highperformance device is suited to home appliances or industrial systems. ## **Product status** ACST1220H-8B |**Product summary**|**Product summary**| |---|---| |**IT(RMS)**|12 A| |**VDRM/VRRM**|800 V| |**IGT**|20 mA| |**Tjmax.**|150 °C| This high temperature 12 A AC switch embeds a Triac structure with a high voltage clamping device to absorb the inductive turn-off energy and withstand line transients such as those described in the IEC 61000-4-5 standards. Offering a low gate current triggering of only 20 mA, it benefits from ST Snubberless technology, enabling high level of noise immunity and turn-off commutation, the ACST1220H-8B eases PCB compliance with EMI standards such as IEC 61000-4-4 (fast transient burst test). Package environmentally friendly ECOPACK2, RoHS (2011/65/EU) and halogen free compliant. DPAK Package is UL-94, V0 flammability resin compliance and RoHS (2011/65/EU) compliant. **DS14276** - **Rev 2** - **September 2023** For further information contact your local STMicroelectronics sales office. www.st.com **ACST1220H-8B Characteristics** **1 Characteristics** **Table 1. Absolute maximum ratings (limiting values)** |**Symbol**|**Parameter**|||**Value**|**Unit**| |---|---|---|---|---|---| |IT(RMS)|RMS on-state current (full sine wave)||TC= 133 °C|12|A| |ITSM|Non repetitive surge peak on-state current,<br>(Tjinitial = 25 °C)|tp= 16.7 ms|Tj= 25 °C|110|A| |||tp= 20 ms||100|| |I2t|I2t value for fusing|tp= 10 ms|Tj= 25 °C|66|A2s| |dl/dt|Critical rate of rise of on-state current,<br>IG= 2 x IGT, tr ≤ 100 ns|f = 50 Hz|Tj= 25 °C|100|A/µs| |VDRM/ VRRM|Repetitive peak off-state voltage||Tj= 150 °C|800|V| |VPP(1)|Non repetitive line peak pulse voltage||Tj= 25 °C|2|kV| |IGM|Peak forward gate current|tp= 20 µs|Tj= 150 °C|1|A| |PGM|Peak gate power|||10|W| |PG(AV)|Average gate power dissipation||Tj= 150 °C|0.1|W| |Tstg|Storage junction temperature range|||-40 to +150|°C| |Tj|Operating junction temperature||||| _1. According to test described by standard IEC 61000-4-5 for a load of L = 30 μH and R = 8 Ohm, refer to Figure 15._ **Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)** |**Symbol**|**Test Conditions**|**Quadrant**|**Value**|**Value**|**Unit**| |---|---|---|---|---|---| |IGT (1)|VD= 12 V, RL= 33 Ω|I-II-III|Min.|1.75|mA| ||||Max.|20|| |VGT|||Max.|1|V| |VGD|VD= 400 V, RL= 3.3 kΩ, Tj= 150 °C|I-II-III|Min.|0.2|V| |IL|IG= 1.2 x IGT|I-II-III|Max.|40|mA| |IH(2)|IT= 500 mA, gate open||Max.|30|mA| |dV/dt(2)|VD= 67 % VDRM, gate open, Tj= 150 °C||Min.|1000|V/µs| |(dI/dt)c(2)|Without snubber (dV/dt)c ≥ 20 V/μs), Tj= 150 °C||Min.|9|A/ms| |VCL|ICL= 0.1 mA, tP= 1 ms||Min.|850|V| _1. Minimum IGT is guaranteed at 5% of IGT max._ _2. For both polarities of OUT referenced to COM._ **DS14276** - **Rev 2** **page 2/12** **ACST1220H-8B Characteristics** **Table 3. Static Characteristics** |**Symbol**|**Test Conditions**|||**Value**|**Unit**| |---|---|---|---|---|---| |VTM (1)|ITM= 17 A, tP= 380 µs|Tj= 25 °C|Max.|1.55|V| |VTO (1)|Threshold voltage|Tj= 150 °C|Max.|0.86|V| |RD (1)|Dynamic resistance|Tj= 150 °C|Max.|36|mΩ| |IDRM/IRRM|VD= VDRM, VR= VRRM|Tj= 25 °C|Max.|1|µA| |||Tj= 150 °C||4.5|mA| _1. For both polarities of COM referenced to OUT._ **Table 4. Thermal parameters** |**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**| |---|---|---|---|---| |Rth(j-c)|Junction to case (AC)|Max.|1.2|°C/W| |Rth(j-a)|Junction to ambient (SCu= 1.65 cm², thickness = 70 µm)|Typ.|70|| **DS14276** - **Rev 2** **page 3/12** **ACST1220H-8B Characteristics (curves)** ## **1.1 Characteristics (curves)** **==> picture [494 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 1. Maximum power dissipation versus on-state Figure 2. On-state RMS current versus case temperature<br>RMS current (full cycle) (full cycle)<br>16 P(W) 14 IT(RMS)(A)<br>a a α = 180° a se<br>14 iee 12 aa OC<br>12<br>10<br>ft} +} AHH |<br>10 a+++a Ge+++ + + HH] i<br>8<br>ree Od a eee<br>8 aa 6 aeeeee<br>6 a eG > a eeeee<br>A 4 a<br>4 ee a<br>++} a a OC<br>2 | | [er | | + + 180° t+ +| $e| | ft 2 aOY<br>IT(RMS) (A) 0 TC(°C)<br>0 lar a a<br>0 2 4 6 8 10 12 14 25 50 75 100 125 150<br>Figure 3. On-state RMS current versus ambient<br>Figure 4. On-state characteristics (maximum values)<br>temperature (free air convection)<br>ITM(A)<br>3 IT(RMS)(A) 100<br>α = 180°<br>a a sD<br>PTETTTT [0 6BSS<br>2<br>JJ [tee] ee PE) iEv a<br>10<br>PRECEEEEThw 6 _EEE<br>1 PS po<br>Pe po<br>NI a Tj = 150 °C ee Oei Tj = 25 °C a Tj max. : 150 °CVT0 = 0.86 V | [Tt]<br>0 Ta(°C) > 1 RD = 36 mOhm VTM(V)<br>25 et 50 EEE 75 EET 100 125 RN 150 0.0 1.0 Pitt 2.0 3.0 i] 4.0 5.0<br>**----- End of picture text -----**<br> **Figure 5. Surge peak on-state current versus number of** **cycles** **Figure 6. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms** **==> picture [480 x 151] intentionally omitted <==** **----- Start of picture text -----**<br> 110100 I (TT TSM(A) Non repetitive ETT TTT [T] 10000 a ITSMdI/dt limitation : 100A/µs(A) —_ ——_—__--— Tj initial=25 °C nnn<br>90 ||eet Tj initial = 25 °C re ee ee IT]Ht po SHEee e<br>80 Ee 1000<br>te = 2 Ee eT |<br>ITSM<br>70<br>60 a a SS<br>100<br>50 SERS et e e<br>ee<br>4030 Repetitive SS 10 po<br>TC = 133°C<br>20 E t I Ce<br>10 pT ET Pt EH<br>0 PEER HHH Number of cycles HEE 1 a tp(ms)<br>1 10 100 1000 0.01 0.10 1.00 10.00<br>**----- End of picture text -----**<br> **DS14276** - **Rev 2** **page 4/12** **ACST1220H-8B Characteristics (curves)** **==> picture [513 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7. Relative variation of gate trigger current and Figure 8. Relative variation of holding and latching<br>voltage versus junction temperature (typical values) current versus junction temperature (typical values)<br>IGT,VGT [Tj] / IGT,VGT, [Tj = 25 °C] IH, Il [Tj] / IH, Il [Tj = 25 °C]<br>2.5 2.5<br>IGT Q3<br>2.0 2.0 IL<br>IGT Q1,Q2 IH<br>1.5 1.5<br>1.0 1.0<br>VGT<br>0.5 0.5<br>Tj(°C) Tj(°C)<br>0.0 0.0<br>-40 0 40 80 120 160 -40 0 40 80 120 160<br>**----- End of picture text -----**<br> **==> picture [513 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 10. Relative variation of critical rate of decrease of<br>Figure 9. Relative variation of critical rate of decrease of<br>main current (di/dt)c versus reapplied (dV/dt)c (typical<br>main current versus junction temperature<br>values)<br>(dI/dt)c [Tj] / (dI/dt)c [Tj = 150 °C]<br>14 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c<br>13 3<br>12 Tj = 150 °C<br>11<br>10<br>9<br>2<br>8<br>7<br>6<br>5<br>4 1<br>3<br>2<br>1 Tj(°C)<br>0 (dV/dt)c (V/µs)<br>25 50 75 100 125 150 0<br>1.0 10.0 100.0<br>**----- End of picture text -----**<br> **==> picture [513 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 11. Relative variation of static dV/dt immunity Figure 12. Relative variation of leakage current versus<br>versus junction temperature (typical values) junction temperature<br>(dV/dt) [Tj] / (dV/dt) [Tj = 150 °C] IDRM, IRRM [VDRM, VRRM, Tj] / IDRM, IRRM, [Tj = 150°C]<br>1.E+00<br>6<br>VD = VR = 536 V VDRM = VRRM = 800 V<br>5<br>1.E-01<br>4<br>3 1.E-02<br>2<br>1.E-03<br>1<br>Tj(°C) Tj(°C)<br>0 1.E-04<br>25 50 75 100 125 150 25 50 75 100 125 150<br>**----- End of picture text -----**<br> **DS14276** - **Rev 2** **page 5/12** **ACST1220H-8B Characteristics (curves)** **==> picture [513 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 14. Thermal resistance junction to ambient versus<br>Figure 13. Relative variation of thermal impedance versus<br>copper surface under tab (typical values)<br>pulse duration<br>K=[Zth /Rth]<br>1.0E+00 Rth(j-a) (°C/W)<br>100<br>DPAK<br>Zth(j-c) Zth(j-a) 90<br>80<br>70<br>60<br>1.0E-01 50<br>40<br>30<br>20<br>10 S Cu (cm²)<br>tP(s) 0<br>1.0E-02<br>1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> **DS14276** - **Rev 2** **page 6/12** **ACST1220H-8B Application information** **2 Application information** AC line transient voltage ruggedness. In comparison with standard Triac, which need additional protection components against surge voltage, the ACST1220H-8B is self-protected against overvoltage, specified by the parameter VCL. The ACST1220H-8B switch can safely withstand AC line transient voltages either by clamping the low energy spikes, such as the inductive spikes at switchoff, or by switching to the on state (for less than 10 ms) to dissipate higher energy shocks through the load. This safety feature works even with high turn-on current ramp-up. The test circuit of Figure 15 represents the ACST1220H-8B application, and is used to stress the ACST switch according to the IEC 61000-4-5 standard conditions. With the additional effect of the load which is limiting the current, the ACST switch withstands the voltage spikes up to 2 kV on top of the peak line voltage. The protection is based on an overvoltage crowbar technology. The ACST1220H-8B folds back safely to the on state as shown in Figure 16. The ACST1220H-8B recovers its blocking voltage capability after the surge and the next zero current crossing. Such a non repetitive test can be done at least 10 times on each AC line voltage polarity. **Figure 15. IEC61000-4-5 standard test schematic load : R = 8 Ohm, L = 30 μH, Rg = 100 Ω** **Figure 16. Typical voltage and current waveforms across the ACST1220H-8B during IEC61000-4-5 standard test** **==> picture [164 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> Vpeak= VCL<br>-—<br>| 1.2/50 µs voltage surge<br>V<br>0<br>I a|LL 8/20 µs current surge 0<br>**----- End of picture text -----**<br> **DS14276** - **Rev 2** **page 7/12** **ACST1220H-8B Package information** ## **3 Package information** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. ## **3.1 DPAK package information** - Molding compouned resin is halogen free and meets UL94 flammability standard, level V0 - Lead-free package leads plating ## **Figure 17. DPAK package outline** **==> picture [385 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> E<br>b4 c2<br>E1<br>A1<br>e b c<br>e1<br>L<br>V2<br>A<br>2<br>L<br>D1<br>D<br>H<br>4<br>L<br>A2<br>**----- End of picture text -----**<br> **DS14276** - **Rev 2** **page 8/12** **ACST1220H-8B DPAK package information** **Table 5. DPAK package mechanical data** ||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**| |---|---|---|---|---|---|---| |**Ref.**|**Millimeters**|||**Inches(1)**||| ||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**| |A|2.18||2.40|0.0858||0.0945| |A1|0.90||1.10|0.0354||0.0433| |A2|0.03||0.23|0.0012||0.0091| |b|0.64||0.90|0.0252||0.354| |b4|4.95||5.46|0.1949||0.2150| |c|0.46||0.61|0.0181||0.0240| |c2|0.46||0.60|0.0181||0.0236| |D|5.97||6.22|0.2350||0.2449| |D1|4.95||5.60|0.1949||0.2205| |E|6.35||6.73|0.2500||0.2650| |E1|4.32||5.50|0.1701||0.2165| |e||2.286|||0.0900|| |e1|4.40||4.70|0.1732||0.1850| |H|9.35||10.40|0.3681||0.4094| |L|1.00||1.78|0.0394||0.0701| |L2|||1.27|||0.0500| |L4|0.60||1.02|0.0236||0.0402| |V2(2)|-8°||+8°|-8°||+8°| _1. Dimensions in inches are given for reference only_ _2. Degree_ _Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed._ **Figure 18. DPAK recommended footprint (dimensions are in mm)** **==> picture [291 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 12.7<br>6.7 3.0 3.0<br>A<br>4.572<br>6.7<br>B<br>1.6<br>The device must be positioned within 0.05 AB<br>**----- End of picture text -----**<br> **DS14276** - **Rev 2** **page 9/12** **ACST1220H-8B Ordering information** **4 Ordering information** **Figure 19. Ordering information scheme** **Table 6. Ordering information** |**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**| |---|---|---|---|---|---| |ACST1220H-8B|ACST1220H|DPAK|0.3 g|50|Tube| **DS14276** - **Rev 2** **page 10/12** **ACST1220H-8B** ## **Revision history** **Table 7. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |05-Sep-2023|1|Initial release.| |19-Sep-2023|2|UpdatedSection 3.1 DPAK package information.| **DS14276** - **Rev 2** **page 11/12** **ACST1220H-8B** ## **IMPORTANT NOTICE – READ CAREFULLY** STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2023 STMicroelectronics – All rights reserved **DS14276** - **Rev 2** **page 12/12**
Updated at April 26, 2026
STMicroelectronics is a global leader in the semiconductor industry, recognized for developing highly integrated, energy-efficient solutions that power modern electronics. With a strong focus on innovation, ST provides a comprehensive portfolio of microelectronics that address the demanding requirements of industrial, automotive, communications, and consumer applications. Our extensive selection of STMicroelectronics components is built around a robust lineup of discrete semiconductors and circuit protection devices. We offer a wide variety of single MOSFETs, Schottky diodes, and fast and ultrafast recovery rectifier diodes, designed to deliver exceptional efficiency and thermal performance in power management and conversion systems. For robust circuit protection, our inventory features hundreds of transient voltage suppressors and TVS diodes that safeguard sensitive electronic components against destructive voltage spikes. In addition to core power discretes like TRIACs, SCRs, bipolar transistors, and single IGBTs, our STMicroelectronics range includes specialized integrated passive filters and MEMS sensors. Furthermore, ST offers advanced integrated passive devices, such as baluns and RF filters, which utilize high-quality monolithic RF IPD processes on glass or high-resistance silicon substrates. These components provide competitive cost structures, reduced power losses, and simplified RFIC-to-antenna matching, ensuring optimal system performance and delivering the reliability required for next-generation wireless and power designs.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →