A1P35S12M3-F

IGBT Module, Six Pack [Full Bridge], 35 A, 1.95 V, 250 W, 150 °C, Module

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Manufacturer: STMICROELECTRONICS
Product type: IGBT Modules
Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor
SVHC: No SVHC (25-Jun-2025)
Product Range: ACEPACK 1 M
IGBT Technology: Trench Field Stop
IGBT Termination: Press Fit
Power Dissipation: 250W
IGBT Configuration: Six Pack [Full Bridge]
Transistor Mounting: Panel
Transistor Polarity: N Channel
DC Collector Current: 35A
Power Dissipation Pd: 250W
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 35A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 1.95V
Collector Emitter Saturation Voltage Vce(on): 1.95V

Delivery and price
Units per pack	50
Price	31.08 €
Current stock	10+
Lead time	30 days

Datasheet

## **A1P35S12M3-F** 

ACEPACK™ 1 - sixpack topology - 1200 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC 

Datasheet - production data 

## **Features** 

- ACEPACK™ 1 power module  DBC Cu Al2O3 Cu 

- Sixpack topology 

   - 1200 V, 35 A IGBTs and diodes 

   - VCE(sat): 1.95 V @ IC = 35 A 

- Soft and fast recovery diode 

- Integrated NTC 

## **Applications** 

**ACEPACK™ 1** 

- Inverters 

- Industrial 

**Figure 1: Internal electrical schematic** 

- Motor drives 

## **Description** 

This power module is a sixpack topology in an ACEPACK™ 1 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**VCES, IC ratings**|**Package**|**Leads type**|
|---|---|---|---|---|
|A1P35S12M3-F|A1P35S12M3-F|1200 V, 35 A|ACEPACK™ 1|Press fit contact pins|



_www.st.com_ 

October 2017 

DocID029303 Rev 3 

1/14 

This is information on a product in full production. 

|**Contents**<br>**A1P35S12M3-F**|**Contents**<br>**A1P35S12M3-F**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
||1.1<br>IGBT .................................................................................................. 3|
||1.2<br>Diode ................................................................................................. 4|
||1.3<br>NTC ................................................................................................... 5|
||1.4<br>Package ............................................................................................ 6|
|**2**|**Electrical characteristics curves .................................................... 7**|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Topology and pin description ...................................................... 10**|
|**5**|**Package information ..................................................................... 11**|
||5.1<br>ACEPACK™ 1 sixpack press fit pins package information ............. 11|
|**6**|**Revision history ............................................................................ 13**|



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**A1P35S12M3-F** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **1.1 IGBT** 

Limiting values at Tj = 25 °C, unless otherwise specified. 

**Table 2: Absolute maximum ratings of the IGBT** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0)|1200|V|
|IC|Continuous collector current (Tc= 100 °C)|35|A|
|ICP_(1)_|Pulsed collector current|70|A|
|VGE|Gate-emitter voltage|±20|V|
|PTOT|Totalpower dissipation|250|W|
|TJMAX|Maximumjunction temperature|175|°C|
|TJop|Operative temperature range under switchingconditions|-40 to 150|°C|



## **Notes:** 

(1)Pulse width limited by maximum junction temperature. 

**Table 3: Electrical characteristics of the IGBT** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter<br>breakdown voltage|IC= 1 mA, VGE= 0 V|1200|||V|
|VCE(sat)|Collector-emitter<br>saturation voltage|VGE= 15 V, IC= 35 A||1.95|2.45|V|
|||VGE= 15 V, IC= 35 A,<br>TJ= 150 ˚C||2.3|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 1200 V|||100|µA|
|IGES|Gate-emitter leakage<br>current|VCE= 0 V, VGE= ±20 V|||±500|nA|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0 V||2154||pF|
|Coes|Output capacitance|||164||pF|
|Cres|Reverse transfer<br>capacitance|||86||pF|
|Qg|Total gate charge|VCC= 960 V, IC= 35 A,<br>VGE= ±15 V||163||nC|
|td(on)|Turn-on delaytime|VCC= 600 V, IC= 35 A,<br>RG= 10 Ω, VGE= ±15 V,<br>di/dt = 1900 A/µs||122||ns|
|tr|Current rise time|||17||ns|
|Eon_(1)_|Turn-on switching<br>energy|||1.21||mJ|
|td(off)|Turn-off delaytime|VCC= 600 V, IC= 35 A,<br>RG= 10 Ω, VGE= ±15 V,<br>dv/dt = 7800 V/µs;||142||ns|
|tf|Current fall time|||150||ns|
|Eoff_(2)_|Turn-off switching<br>energy|||2.19||mJ|



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**A1P35S12M3-F** 

## **Electrical ratings** 

||**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
||td(on)|Turn-on delaytime|VCC= 600 V, IC= 35 A,<br>RG= 10 Ω, VGE= ±15 V,<br>di/dt = 1533 A/µs,<br>TJ= 150 °C||124||ns|
||tr|Current rise time|||18||ns|
||Eon|Turn-on switching<br>energy|||1.8||mJ|
||td(off)|Turn-off delaytime|VCC= 600 V, IC= 35 A,<br>RG= 10 Ω, VGE= ±15 V,<br>dv/dt = 6700 V/µs,<br>TJ= 150 °C||142||ns|
||tf|Current fall time|||256||ns|
||Eoff|Turn-off switching<br>energy|||3.1||mJ|
||tSC|Short-circuit withstand<br>time|VCC≤ 600 V, VGE≤ 15 V,<br>TJstart≤ 150 °C|10|||µs|
||RTHj-c|Thermal resistance<br>junction to case|Each IGBT||0.55|0.60|°C/W|
||RTHc-h|Thermal resistance case<br>to heatsink|Each IGBT,<br>λgrease= 1 W/(m·°C)||0.70||°C/W|



## **Notes:** 

- (1)Including the reverse recovery of the diode. 

- (2)Including the tail of the collector current. 

## **1.2 Diode** 

**Table 4: Absolute maximum ratings of the diode** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VRRM|Repetitivepeak reverse voltage|1200|V|
|IF|Continuous forward current at (TC= 100 °C)|35|A|
|IFP_(1)_|Pulsed forward current|70|A|
|TJMAX|Maximumjunction temperature|175|°C|
|TJop|Operative temperature range under switchingconditions|-40 to 150|°C|



**Notes:** 

- (1)Pulse width limited by maximum junction temperature. 

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**A1P35S12M3-F** 

**Electrical ratings** 

**Table 5: Electrical characteristics of the diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Forward voltage|IF= 35 A|-|2.95|4.1|V|
|||IF= 35 A, TJ= 150 ˚C|-|2.3|||
|trr|Reverse recoverytime|IF= 35 A, VR= 600 V,<br>VGE= ±15 V, di/dt = 1900 A/μs|-|140||ns|
|Qrr|Reverse recoverycharge||-|2.62||µC|
|Irrm|Reverse recoverycurrent||-|54||A|
|Erec|Reverse recoveryenergy||-|1.2||mJ|
|trr|Reverse recoverytime|IF= 35 A, VR= 600 V,<br>VGE= ±15 V,<br>di/dt = 1533 A/μs,<br>TJ= 150 °C|-|350||ns|
|Qrr|Reverse recoverycharge||-|6.6||µC|
|Irrm|Reverse recoverycurrent||-|63||A|
|Erec|Reverse recoveryenergy||-|3.2||mJ|
|RTHj-c|Thermal resistance<br>junction to case|Each diode|-|0.8|0.9|°C/W|
|RTHc-h|Thermal resistance case<br>to heatsink|Each diode,<br>λgrease= 1 W/(m·°C)|-|0.75||°C/W|



## **1.3 NTC** 

**Table 6: NTC temperature sensor, considered as stand-alone** 

|**Symbol**|**Parameter**|**Test condition**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|R25|Resistance|T = 25°C||5||kΩ|
|R100|Resistance|T = 100°C||493||Ω|
|ΔR/R|Deviation of R100||-5||+5|%|
|B25/50|B-constant|||3375||K|
|B25/80|B-constant|||3411||K|
|T|Operating temperature<br>range||-40||150|°C|



**Figure 2: NTC resistance vs. temperature** 

**==> picture [175 x 162] intentionally omitted <==**

**Figure 3: NTC resistance vs. temperature, zoom** 

**==> picture [185 x 167] intentionally omitted <==**

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**A1P35S12M3-F** 

**Electrical ratings** 

## **1.4 Package** 

**Table 7: ACEPACK™ 1 package** 

|**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|Visol|Isolation voltage (AC voltage, t = 60 s)|||2500|V|
|Md|Screw mountingtorque|40||80|Nm|
|Tstg|Storage temperature|-40||125|°C|
|CTI|Comparative trackingindex|200||||
|Ls|Strayinductance module P1 - EW loop||28.7||nH|
|Rs|Module lead resistance, terminal to chip||3.9||mΩ|



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**A1P35S12M3-F** 

**Electrical characteristics** curves 

## **2 Electrical characteristics curves** 

**==> picture [460 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 4: IGBT output characteristics (VGE = 15 V)  Figure 5: IGBT output characteristics (TJ = 150 °C)<br>**----- End of picture text -----**<br>


**Figure 6: IGBT transfer characteristics (VCE = 15 V)** 

**==> picture [165 x 151] intentionally omitted <==**

**Figure 7: Switching energy vs. gate resistance** 

**==> picture [167 x 152] intentionally omitted <==**

**Figure 8: Switching energy vs. collector current** 

**==> picture [163 x 152] intentionally omitted <==**

**Figure 9: IGBT reverse biased safe operating area (RBSOA)** 

**==> picture [165 x 151] intentionally omitted <==**

DocID029303 Rev 3 

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**Electrical characteristics** curves 

**==> picture [441 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11: Diode reverse recovery energy vs. diode<br>Figure 10: Diode forward characteristics<br>current slope<br>**----- End of picture text -----**<br>


**==> picture [451 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 12: Diode reverse recovery energy vs.  Figure 13: Diode reverse recovery energy vs. gate<br>forward current  resistance<br>**----- End of picture text -----**<br>


**Figure 14: Inverter diode thermal impedance** 

**==> picture [193 x 164] intentionally omitted <==**

**Figure 15: IGBT thermal impedance** 

**==> picture [193 x 164] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**==> picture [397 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16:  Test circuit for inductive load  Figure 17:  Gate charge test circuit<br>switching<br>A A<br>C<br>G L=100 µH<br>E B<br>B<br>C 3.3µF 1000µF VCC<br>G D.U.T<br>+ RG E<br>-<br>AM01504v1<br>**----- End of picture text -----**<br>


**Figure 18:  Switching waveform Figure 19:  Diode reverse recovery waveform** 

**==> picture [144 x 70] intentionally omitted <==**

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**A1P35S12M3-F** 

**Topology and** pin description 

## **4 Topology and pin description** 

**Figure 20: Electrical topology and pin description** 

**Figure 21: Package top view with sixpack pinout** 

~~©~~ 10/14 DocID029303 Rev 3 ~~2~~ 

**A1P35S12M3-F** 

**Package information** 

## **5 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **5.1 ACEPACK™ 1 sixpack press fit pins package information** 

**Figure 22: ACEPACK™ 1 sixpack press fit pins package outline (dimensions are in mm)** 

**==> picture [408 x 403] intentionally omitted <==**

- The lead size includes the thickness of the lead plating material. 

- Dimensions do not include mold protrusion. 

- Package dimensions do not include any eventual metal burrs. 

DocID029303 Rev 3 

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**A1P35S12M3-F** 

**Package information** 

**Figure 23: ACEPACK™ 1 sixpack press fit pins package outline (dimension are in mm)** 

**==> picture [408 x 391] intentionally omitted <==**

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**A1P35S12M3-F** 

**Revision history** 

## **6 Revision history** 

**Table 8: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|04-May-2016|1|Initial release.|
|24-Aug-2017|2|Updated title, features, description and_Table 1: "Device summary"_in<br>cover page.<br>Updated_Section 1: "Electrical ratings"_.<br>Added_Section 2: "Electrical characteristics curves"_,_Section 3: "Test_<br>_circuits"_,_Section 4: "Topology and pin description"_and_Section 5:_<br>_"Package information"_.<br>Minor text changes.|
|03-Oct-2017|3|Updated_Table 7: "ACEPACK™ 1 package"_and_Section 2: "Electrical_<br>_characteristics curves"_.<br>Minor text changes.|



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**A1P35S12M3-F** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

14/14 

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Updated at April 16, 2026

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