2SC5824T100R
Bipolar (BJT) Single Transistor, NPN, 60 V, 2 A, 500 mW, SOT-89, Surface Mount
- Manufacturer: ROHM
- Product type:
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:200MHz; Power Dissipation Pd:500mW; DC Collector Current:2A; DC Current Gain hFE:120hFE; Transistor Case Style:SOT-89;
- MSL: -
- SVHC: Lead (23-Jan-2024)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 500mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 200MHz
- Transistor Case Style: SOT-89
- DC Current Gain hFE Min: 120hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 2A
- Collector Emitter Voltage Max: 60V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.171 € |
| Current stock | 10+ |
| Lead time | 30 days |
## Power transistor (60V, 3A) ## **2SC5824** ## **Features** - 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) - 2) Low saturation voltage, typically - (Typ. : 200mV at IC = 2A, IB = 200mA) - 3) Strong discharge power for inductive load and capacitance load. - 4) Complements the 2SA2071. ## **Applications** Low frequency amplifier High speed switching ## **Dimensions** (Unit : mm) **==> picture [150 x 101] intentionally omitted <==** **----- Start of picture text -----**<br> MPT3<br>Sf pes<br>En<br>(1)Base(Gate) Each lead has same dimensions<br>(2)Collector(Drain)<br>(3)Emitter(Sourse) Abbreviated symbol : UP<br>**----- End of picture text -----**<br> ## **Structure** NPN Silicon epitaxial planar transistor **Packaging specifications** Package Taping Type Code T100 Basic ordering unit 1000 (pieces) 2SC5824 i= **Absolute maximum ratings** (Ta=25C) |**Absolute maximum ratings**(Ta=25C)|(Ta=25C)C)C)||| |---|---|---|---| |Parameter|Symbol<br>a|Limits<br>a|Unit| |Collector-base voltage|VCBO<br>a<br>ee|60<br>a<br>eee|V<br>eee| |Collector-emitter voltage|VCEO<br>ee<br>ee|60<br>eee<br>eee|V<br>eee<br>eee| |Emitter-base voltage|VEBO<br>ee <br>ee<br>ee|6<br> eee<br>eee<br>ee|V<br>eee<br>eee<br>ee| |Collector current|IC<br>ee <br>ee<br>ee|3<br> eee<br>ee<br>eee|A<br>eee<br>ee<br>eee| ||ICP<br>ee<br>ee|6<br>ee<br>eee|∗1<br>A<br>ee<br>eee| |Power dissipation|PC<br>ee <br>PT|500<br> eee<br>PT|mW<br>∗2<br>eee| ||PC<br>ee<br>ee|2.0<br>ee<br>ee|W<br>∗3<br>ee| |Junction temperature|Tj<br>ee<br>~~ee~~|150<br>ee<br>~~eee~~|°C<br>ee<br>~~eee~~| |Range of storage temperature|Tstg<br>ee<br>~~ee~~|−55 to+150<br>ee<br>~~eee~~|°C<br>ee<br>~~eee~~| ∗ 1 Pw = 100ms - ∗ 2 Each terminal mounted on a recommended land. - ∗ 3 Mounted on a 40x40x0.7(mm) ceramic substrate www.rohm.com ○c 2011 ROHM Co., Ltd. All rights reserved. **2011.03 - Rev.C** 1/3 **2SC5824** Data Sheet ## **Electrical characteristics** (Ta=25C) |**Electrical characteristics**(Ta=|25C)|||||| |---|---|---|---|---|---|---| |Parameter<br>|Symbol|Min.|Typ.|Max.|Unit|Conditions| |Collector−base breakdown voltage|BVCBO|60|−|−|V|IC=100μA| |Collector−emitter breakdown voltage|BVCEO|60|−|−|V|IC=1mA| |Emitter−base breakdown voltage|BVEBO|6|−|−|V|IE=100μA| |Collector cut-off current|ICBO|−|−|1.0|μA|VCB=40V| |Emitter cut-off current|IEBO|−|−|1.0|μA|VEB=4V| |Collector−emitter staturation voltage|VCE(sat)|−|200|500|mV|IC=2A, IB=200mA<br>∗1| |DC current gain|hFE|120|−|390|−|VCE=2V, IC=100mA| |Transition frequency|fT|−|200|−|MHz|VCE=10V, IE= −100mA, f=10MHz| |Collector output capacitance|Cob|−|20|−|pF|VCB=10V, IE=0mA, f=1MHz| |Turn-on time|ton|−|50|−|ns|IC=3A,<br>IB1=300mA<br>IB2= −300mA<br>VCC 25V<br>∗2| |Storage time|tstg|−|150|−|ns|| |Fall time|tf|−|30|−|ns|| ∗ 1 Non repetitive pulse ∗ 2 See switching charactaristics measurement circuits ## **hFE RANK** |**hFE RANK**|| |---|---| |Q|R| |120-270|180-390| ## **Electrical characteristic curves** **==> picture [483 x 320] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1000 1000<br>V CE = 2V Ta = 25 ° C V CE = 2V<br>Ta = 125 ° C VCE = 5V<br>1 100 VCE = 3V 100 Ta = − 40 ° C Ta = 25 ° C<br>Ta = 100 ° C<br>Ta = − 40 ° C<br>Ta = 100 ° C<br>0.1 Ta = 25 ° C 10 VCE = 2V 10 Ta = 125 ° C<br>0.01 1 1<br>0 0.5 1 1.5 2 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)<br>Fig.1 Ground emitter propagation Fig.2 DC current gain vs. collector Fig.3 DC current gain vs. collector<br>characteristics current current<br>10 10 10<br>Ta = 25 ° C I C /I B = 10/1 IC/IB = 10/1<br>Ta = 125 ° C<br>1 1 Ta = 100 ° C Ta = − 40 ° C<br>Ta = 25 ° C<br>1<br>0.1 IC/IB = 20/1 0.1 Ta = 25 ° C<br>Ta = 125 ° C<br>IC/IB = 10/1 Ta = − 40 ° C Ta = 100 ° C<br>0.01 0.01 0.1<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)<br> (A)<br>COLLECTOR CURRENT : IC DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE<br>)(V)<br> (sat)(V) (satCE ) (V)(sat<br>CE BE<br>VOLTAGE : V<br>VOLTAGE : V COLLECTOR SATURATION BASE EMITTER SATURATION VOLTAGE : V<br>COLLECTOR SATURATION<br>**----- End of picture text -----**<br> Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Collector-emitter saturation voltage vs. Collector Current Fig.6 Base-emitter saturation voltage vs. collector current www.rohm.com **2011.03 - Rev.C** 2/3 ○c 2011 ROHM Co., Ltd. All rights reserved. **2SC5824** Data Sheet **==> picture [472 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 100 1000<br>Ta = 25 ° C Ta = 25 ° C Ta = 25 ° C<br>V CE = 10V f = 1MHz V CC = 25V<br>IC/IB = 10/1<br>tstg<br>100<br>10 100<br>ton<br>10<br>tf<br>1 1 10<br>− 0.001 − 0.01 − 0.1 − 1 − 10 0.1 1 10 100 0.01 0.1 1 10<br>EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR CURRENT : IC (A)<br>Fig.7 Transition frequency Fig.8 Collector output capacitance Fig.9 Switching Time<br>pF)<br> (<br>ob<br> (MHz)T<br>SWITCHING TIME (ns)<br>TRANSITION FREQUENCY : F<br>COLLECTOR OUTPUT CAPACITANCE : C<br>**----- End of picture text -----**<br> ## **Switching characteristics measurement circuits** **==> picture [198 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> RL=8.3 Ω<br>VIN<br>IB1 IC<br>VCC 25V<br>PW<br>IB2<br>PW 50 S<br>Duty cycle 1%<br>IB1<br>Base current IB2<br>waveform<br>90%<br>IC<br>Collector current 10%<br>waveform<br>ton tstg tf<br>**----- End of picture text -----**<br> www.rohm.com ○c 2011 ROHM Co., Ltd. All rights reserved. **2011.03 - Rev.C** 3/3 Notice ## N o t e s Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
Updated at April 25, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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