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2N6044
DARLINGTON TRANSISTOR, NPN, 80V, TO-220
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: SOLID STATE
- Product type: Single Bipolar Junction Transistors - BJT
- ; DARLINGTON TRANSISTOR, NPN, 80V, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:75W; DC Collector Current:8A; RF Transistor Case:TO
- MSL: -
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 75W
- DC Current Gain hFE: 1000hFE
- Transistor Mounting: Through Hole
- DC Collector Current: 8A
- Power Dissipation Pd: 75W
- Transition Frequency: -
- Transistor Case Style: TO-220
- DC Current Gain hFE Min: 1000hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 8A
- Collector Emitter Voltage Max: 80V
- Collector Emitter Voltage V(br)ceo: 80V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.609 € |
| Current stock | 25+ |
| Lead time | 7 days |
www.solidstateinc.com
## | 46 FARRAND STREET | BLOOMFIELD, NEW JERSEY 07003
(a DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS PNP NPN soplications general-purpose amplifier and low-speed switching 2N6040 2N6043 FEATURES: 2N6041 2N6044 * Collector-Emitter Sustaining Voltage2N6042 2N6045 Veeoisus = 60 V (Min) - 2N6040 , 2N6043 = 80 V (Min) - 2N6041 , 2N6044 = 100 V (Min) - 2N6042 , 2N6045 * Collector-Emitter Saturation Voltage 10 AMPERE AMPERE Veeveat)ee = 20V2-0 V (Max.)(Max.) @ @ IcI, == 4.04.0 A -2N6042,A-2N6040, 2N604541 , 2N6043,44 COMPLEMENTARYDARLINGTONSILICONDARLINGTONSILICONSILICON * Monolithic Construction with Built-in Base-Emitter Shunt Resistor PON OO OWS
10 AMPERE AMPERE COMPLEMENTARYDARLINGTONSILICONDARLINGTONSILICONSILICON PON OO OWS 80 WATTS
## MAXIMUM RATINGS
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Characteristic Symbol | 2N6040 | 2N6041 | 2N6042<br>2N6043 | 2N6044 | 2N6045<br>Collector Current-Continuous 8.0 A 10-220<br>-Peak 16 1<br>8<br>TotalBaseDeratePowerCurrent aboveDissipationissipatt 25°C @T,= 25°C 1200.675 wrcmAWw i!t123Oy]P >[-° 7AOT (Lie<br>TemperatureOperating andRange Storage Junction Ty. Tst¢ - 65 to +150 °c "| | | D<br>~~ welt] ran<br>THERMAL CHARACTERISTICS F K<br>2.COLLECTOR<br>FIGURE -1 POWER DERATING | MIN | MAX |<br>g 90a ee ee ee eee A 14.68 15.31<br>i 80-——-eee SO cB | 9.78soi | 10.468 2<br>g2D PS D | 1308 | 1462<br>sopso |[of| F | 242 | 3.66<br>ee| |Kf SGH | oz112 | ose1.36<br>Bop _} | | Th] | Jo] ata | 138<br>es k | 220 | aar<br>é 5ie) [25[TT50 75 100 125TN150 re)m | 3.702% | 3.90298<br>To . TEMPERATURE(?C)<br>**----- End of picture text -----**<br>
|||2N6040, 2N6041, 2N6042|2N6040, 2N6041, 2N6042|PNP|/ 2N6043,|/ 2N6043,|2N6044, 2N6045 NPN|2N6044, 2N6045 NPN||
|---|---|---|---|---|---|---|---|---|---|
|esses<br>ceceeee eeccence<br>eee<br>eeeneces neces||||||||||
|ELECTRICAL CHARACTERISTICS ( T, = 25°C unless otherwise noted )<br>emis<br>| ine[me|e|e<br>OFF CHARACTERISTICS||||||||||
|Collector - Emitter Sustaining Voltage (1)<br>(I, =30 mA, |,=0)<br>2N6040, 2N6043<br>2N6041, 2N6044|||Voeo(sus)||60<br>80|||AV||
|||2N6042, 2N6045||100||||||
|Collector Cutoff Current||||||||mA||
|(Veg =30V, 1, =0<br>)||2N6040, 2N6043||||||||
|(Veg = 40 V, 1, = 0<br>)||2N6041, 2N6044||||||||
|(Voge<br>= 50V,1,=0<br>)||2N6042, 2N6045||||||||
|Collector Cutoff Current||||||||mA||
|(Veg = 60 V, 1, = 0<br>)||2N6040, 2N6043||||||||
|(Veg = 80V, 1, =0<br>)||2N6041, 2N6044||||||||
|(Ve, = 100 V,I.=0<br>)||2N6042, 2N6045||||||||
|Emitter Cutoff Current||||||||mA||
|(Veg<br>=5.0 V,I,= 0<br>)||||||||||
|ON CHARACTERISTICS (1)||||||||||
|DC Current Gain|||hFE|||||||
|(1, =4.0A, V., = 4.0 V)||2N6040,41/ 2N6043,44||1000|||20000|||
|(1, =3.0A,V.,=4.0V)<br>(1, = 8.0A, V., = 4.0V)||2N6042, 2N6045<br>All Types||1000<br>100|||20000|||
|Collector-Emitter Saturation Voltage<br>(I, = 4.0A, I, = 16 mA)<br>(1, =3.0A, I, = 12 mA)<br>(Ig =8.0A, |, =80mA)||2N6040,41/ 2N6043,44<br>2N6042, 2N6045<br>AllTypes|Vegtsat)||||2.0<br>2.0<br>4.0|Vv|||
|Base-Emitter SaturationVoltage<br>(1,<br>=8.0A, I, = 80 mA)|||Vee;sat)||||4.5|Vv||
|Base-Emitter On Voltage<br>(1,<br>=4.0A,Veg<br>=4.0V)|||Veeton)||||2.8|Vv||
|DYNAMIC CHARACTERISTICS||||||||||
|||_||||||||
|Output Capacitance<br>(Veg = 10 V, I- = 1.0 A, f = 0.1 MHz)|||Cop|||||pF||
|Small-Signal Current Gain|||Ne|||||||
|(lg =3.0A,Veg<br>= 4.0 V, f = 1.0KHz)||||300||||||
|(1) Pulse Test: Pulse width = 300 us|, Duty Cycle<br>= 2.0%|||||||||
|PNP<br>couecroaINTERNALSCHEMATICpIAcRN|||pIAcRN|||couuecron||||
|2N6040<br>nnn<br>Gi<br>2N6041<br>!<br>!<br>2N6042<br>*ASEO—<br>H<br>\<br>JAE<br>!<br>!<br>L--~-—-—~—-]}--J4|||2N6043<br>2N6044<br>2N6045|BASE|nn<br>Glee)<br>'<br>\<br>O—<br>!<br>\<br>Nobel<br>'<br>!<br>[ rn<br>aaEeD See||||||
|EMITTER||||||euiTTER||||
2N6040, 2N6041, 2N6042 PNP / 2N6043, 2N6044, 2N6045 NPN
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a,<br>SWITCHING TIMES TEST CIRCUIT SWITCHING TIMES<br>5 Torr<br>euRe PSA Sl<br>omer” aete— |) PSCThe SAS a<br>av le ee -- 0 ay! aaar { ~7 Peee eeeIH<br>p-q----f----L. 1 <0 il 3w sf}K EEPy eee t,t TTT ty<br>vi F gbSor set £ ee<br>weeray | - ~ ~~]a .<br>OUTY4 < CYCLE10 ro = 1% ™ ForosteoNPM 10m circuit roveewentah paler. 02/— 1+ Vecs30VIgfgs250lee _ |MTTHta@Veccorp0V<br>0.07 tate =Reaoe<br>beget EEFH<br>0.1 02.03. +05 o7 1 2 3 +5 7 10<br>lc , COLLECTOR CURRENT (AMP)<br>SWITCHING TIMES CAPACITANCES<br>§ . yO ‘<br>;See = “COO 7<br>eerieiene we | to HH ae<br>SEETHL i<br>1 ome a Ds :'<br>ES SS Oe as SS | CS TE VS Ges Oe<br>0 Seers= a Pree eel| gin |Th i |<br>Oe ened oe SS = 2 109 nw DEE<br>Z 06Sa See ettSFT es- “Crsa St. pe TS TETmest<br>- = Fy TTT PN UTE Th<br>“| | PAN [PAN] 8z 7 mealSRART ee<br>ieSetee || [emer| ealuen —LI | [|] a : a<br>oor ee aEL |<br>on = Fea SEA - a7 NN al<br>ot 02 03SO05 07 1 203 8 a 7 10 0 o1 02 0SiG10 20 50 10 20 50 100<br>i, COLLECTOR CURRENT (AMP) Va. REVERSE VOLTAGE(VOLTS)<br>ACTIVE-REGION SAFE OPERATING AREA (SOA)<br>a& ee2010po HEE7 FSEa of aTheretransistor:average are two limitationjunctionon thetemperature power handlingandvg secondabilityam<br>5 75——__|a[| TT tt ee eeeVARNESea breakdownlimits of the safetransistoroperatingthat must-bearea curvesobservedindicatefor reliableIc-Vce<br>a PT TT SIN ENN operation ie., the transistor must not be subjected to<br>& ' ———$= === greater dissipation than curves indicate.<br>Bas The data of SOA curve Is base on Tpx=150 °C; Te is<br>“ Ht 1-H variable depending on conditions. second breakdow<br>2 0.2; —- — Bonding<br>ra ark Wre Limit iN AN pulse limits are valid for duty cycles to 10% providea<br>2 77 7 nema United Toa5"¢ (Snge Puse) |_| TNS Tueg<150°C, At high case temperatures, thermal limita-<br>0008eee Reva SH tion will reduce the power that can be handled to values<br>ee tr 2N6044/2NGO44 menaae less than the limitations imposed by second breakdown.<br> o02dO cco<br>1 2 5 7 10 230 50.70 «100<br>Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>
2N6040, 2N6041, 2N6042 PNP / 2N6043, 2N6044, 2N6045 NPN
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nnn<br>PNP 2N6040, 2N6041, 2N6042 NPN 2N6043, 2N6044, 2N6045<br>DC CURRENT GAIN OC CURRENT GAIN<br>20ka ee 20k|ee<br>Beeaeaeee eet §: anesre7t TAEEETETSS<br>aqa 2a7 eAq %& SatrN<br>a)2|_| NNNW ee:8 “|(iTIN NNNNN<br>at ge EEE rene sof ae<br>aH EH ih<br>a 0.2 05 1.0 2.0 6.0 10 arr 02 08 1.0 20 50 10<br>Ic, COLLECTOR CURRENT (AMP) Ie , COLLECTOR CURRENT (AMP)<br>COLLECTOR SATURATION REGION COLLECTOR SATURATION REGION<br>ee “OO<br>sft HUT ttTn wt em tf eos] | l<br>ee ee /-—<br>3 oA TT AT TT 3 oT eines |<br>: PTE VEN : HTH ~<br>5S wTLWRITWE Z cult eeAE VPENT<br>oe SJ NET<br>a CONIC Ct | ONIE SrRa<br>2 COI Sa Ce<br>0.3 0§ 1.0 2.0 5.0 10 20 «30 0.3 0§ 1.0 2.0 5.0 10 20 0«30<br>ls, BASE CURRENT (mA) ls, BASE CURRENT (mA)<br>“ON" VOLTAGES "ON" VOLTAGES<br>ee a 6 pepe Pte<br>e~ 2}ELI- HH railVA . wdSS eeeLimasyallvi<br> +++ ]} HE| MA Fo at<br>| a A<br>eez savm| a eeenyTA fof weeae| [IL et AT<br>ee elee § Lee IT<br>vf tae tT et<br>: 984HR0.2 geeer05 07 a0 IT2.0 HHtt50 7.0 10 O85a eo0.2 05 07 1.0 2.0 50 70 10<br>IC , COLLECTOR CURRENT (AMP) IC , COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>
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Updated at March 27, 2026
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