2KK5115DFN

## **N Channel MOSFET** 

## **Features** 

- VDS(V) = 60V 

- ID MAX = 80A 

- RDS(on) < 7.5mΩ @ VGS=10V 

- RDS(on) < 9.5mΩ @ VGS=4.5V 

- Packaging-PDFN5 × 6-8 

**Absolute Maximum Ratings** (TA = 25°C unless otherwise noted) 

|**Absolute Maximum Ratings**(TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|**Absolute Maximum Ratings**(TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|(TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)|||
|---|---|---|---|---|
|**Parameter**<br>~~a~~<br>~~$A~~||**Symbol**<br>~~a~~|**Rating**<br>~~a~~|**Unit**<br>~~a~~|
|Drain-Source Voltage<br>~~$A~~||VDS|60|V<br>~~|~~|
|Gate-Source Voltage<br>~~$A~~<br>~~a~~<br>~~|~~<br>~~|~~||VGS<br>~~a~~<br>~~|~~<br>~~**|**~~|+20<br>~~a~~<br>~~|~~<br>~~**|**~~||
|Continuous Drain Current<br>~~$A~~<br>~~|~~<br>~~|~~<br>~~|~~|TC= 25°C<br>~~A~~<br>~~|~~<br>~~|~~|ID<br>~~|~~<br>~~**|**~~<br>~~|~~|80<br>~~|~~<br>~~**|**~~|A<br>~~|~~<br>~~a~~<br>~~a~~|
||TC= 100°C<br>~~|~~<br>~~|~~||51<br>~~|~~<br>~~**|**~~||
||TA= 25°C<br>~~|~~<br>~~|~~||10<br>~~**|**~~<br>~~|~~||
||TA= 100°C<br>~~|~~||8<br>~~|~~||
|Diode Continuous Forward Current<br>~~|~~<br>~~a~~|TC= 25°C<br>~~|~~<br>~~a~~|IS<br>~~|~~<br>~~a~~|25<br>~~|~~<br>~~a~~||
|Avalanche Current, Singlepulse(L=0.5mH) (Note 2)<br>~~a~~||IAS<br>~~a~~|20<br>~~a~~||
|Avalanche Energy, Singlepulse(L=0.5mH) (Note 2)<br>~~a~~||EAS<br>~~a~~|100<br>~~a~~|mJ<br>~~a~~|
|Power Dissipation<br>~~|~~<br>~~|~~<br>~~|~~|TC= 25°C<br>~~|~~<br>~~|~~|PD<br>~~|~~<br>~~|~~<br>~~|~~|52<br>~~|~~<br>~~|~~|W<br>~~|~~|
||TC= 100°C<br>~~|~~<br>~~|~~<br>~~|~~||20.8<br>~~|~~<br>~~|~~<br>~~|~~||
||TA= 25°C<br>~~|~~<br>~~|~~<br>~~|~~||2<br>~~|~~<br>~~|~~<br>~~|~~||
||TA= 100°C<br>~~|~~<br>~~|~~||1.3<br>~~|~~<br>~~|~~<br>~~pO~~||
|Thermal Resistance. Junction- to-Case<br>~~|~~<br>~~a~~|SteadyState<br>~~|~~<br>~~a~~|RθJC<br>~~|~~<br>~~a~~|2.4<br>~~|~~<br>~~a~~|°C/W|
|Thermal Resistance. Junction- to-Ambient(Note 3)<br>~~$$~~|t ≤ 10s|RθJA<br>~~a~~<br>~~|~~|25<br>~~|~~||
|Thermal Resistance. Junction- to-Case(Note 3)<br>~~a~~<br>~~$$~~|SteadyState<br>~~a~~||60<br>~~a~~<br>~~|~~||
|Junction Temperature<br>~~$$~~||TJ<br>~~|~~|1450<br>~~|~~|°C|
|Storage Temperature Range<br>~~$$~~<br>~~a~~||Tstg<br>~~|~~<br>~~a~~|-55 to 150<br>~~|~~<br>~~a~~||



Notes: 

1. Pulse width limited by max. junction temperature. 

2. UIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature Tj=25°C). 

3. Surface Mounted on 1in[2] pad area. 

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## **N Channel MOSFET** 

## **Electrical Characteristics** (TA = 25°C unless otherwise specified) 

|**Electrical Characteristics**(TA= 25°C|unless otherw|ise specifed)||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**|**Min**<br>**Typ**|**Max**|**Unit**|
|Drain-Source Breakdown Voltage|BVDSS|ID=-250μA, VGS=0V|60||V|
|Zero Gate Voltage Drain Current|IDSS|VDS=-48V, VGS=0V||1|µA|
|||VDS=-48V, VGS=0V, TJ= 85°C||30||
|Gate to Source Leakage Current|IGSS|VDS=0V, VGS=±20V||±100|nA|
|Gate to Source Threshold Voltage|VGS(th)|VDS=VGS, ID=250µA|1.1|2.1|V|
|Static Drain-Source On-Resistance (Note 4)|RDS(On)|VGS=10V, ID=25A||7.5|mΩ|
|||VGS=-4.5V, ID=6A||9.5||
|Input Capacitance|Ciss<br>Coss<br>Crss|VGS=0V, VDS=30V, f=1MHz|250|0|pF|
|Output Capacitance|||215|||
|Reverse Transfer Capacitance|||1.5|||
|Gate Resistance|Rg|VGS=0V, VDS=0V, f=1MHz|1||Ω|
|Total Gate Charge|Qg<br>Qgs<br>Qgd|VGS=10V, VDD=30V, ID=25A|45||nC|
|Gate Source Charge|||9|||
|Gate Drain Charge|||8.5|||
|Turn-On DelayTime|td(on)<br>tr<br>td(of)<br>tf|VDD= 30V, RL= 30Ω, IDS=1A<br>IGEN= 10A, RG= 6Ω|20||nS|
|Turn-On Rise Time|||9|||
|Turn-Of DelayTime|||55|||
|Turn-Of Fall Time|||20|||
|BodyDiode Reverse RecoveryTime|trr<br>IF <br>Qrr|= 25A, dI/dt = 100 A/μs|28||nS|
|BodyDiode Reverse RecoveryCharge|||30||nC|
|Diode Forward Voltage|VSD<br>VS|D= 25A, VGS= 0V||13|V|



Notes 4: Pulse test ; pulse width≤300μs, duty cycle≤2%. 

## **Typical Characterisitics** 

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## **N Channel MOSFET** 

## **Typical Characterisitics** 

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## **N Channel MOSFET** 

## **Avalanche Test Circuit and Waveforms** 

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## **Switching Time Test Circuit and Waveforms** 

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## **Package Outline Dimensions** 

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|||||
|---|---|---|---|
|**Dimensions In Millimeters**<br>**Min.**<br>**Max.**||**Dimensions In Inches**<br>**Min.**<br>**Max.**||
|0.900|1.000|0.035|0.039|
|0.254REF.||0.010REF.||
|4.944|5.096|0.195|0.201|
|5.974|6.126|0.235|0.241|
|3.910|4.110|0.154|0.162|
|3.375|3.575|0.133|0.141|
|4.824|4.976|0.190|0.196|
|5.674|5.826|0.223|0.229|
|1.190|1.390|0.047|0.055|
|0.350|0.450|0.014|0.018|
|1.270TYP.||0.050TYP.||
|0.559|0.711|0.022|0.028|
|0.424|0.576|0.017|0.023|
|0.574|0.726|0.023|0.029|
|10°|12°|10°|12°|



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## **N Channel MOSFET** 

## **Suggested Pad Layou** 

## **Notes** 

1. Controlling dimension: in millimeters. 

2. General tolerance: ±0.05mm 

3. The pad layout is for reference purposes only. 

## **Diagram** 

## **Part Number Table** 

## Dimensions : Millimetres 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|N Channel MOSFET, 80A, 60V|2KK5115DFN|



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