Illustrative purposes only
HN4B102J(TE85L,F)
Bipolar Transistor Array, NPN, PNP, 30 V, 2 A, 1.1 W, 40 hFE, SOT-25
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: TOSHIBA
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 5Pins
- DC Current Gain hFE: 40hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN, PNP
- DC Collector Current: 2A
- Power Dissipation Pd: 1.1W
- Power Dissipation NPN: 1.1W
- Power Dissipation PNP: 1.1W
- Transistor Case Style: SOT-25
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 40hFE
- DC Current Gain hFE Min PNP: 40hFE
- Continuous Collector Current NPN: 2A
- Continuous Collector Current PNP: 2A
- Collector Emitter Voltage Max NPN: 30V
- Collector Emitter Voltage Max PNP: 30V
- Collector Emitter Voltage V(br)ceo: 30V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.323 € |
| Current stock | 3000 |
| Lead time | 7 days |
Datasheet
|
|---|