ZXMS6005DT8TA

**ZXMS6005DT8 Green** ~~@,~~ Cd **60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE** _**INTELLIFET[® ]**_ **MOSFET** 

## DIODES. 

## **Product Summary** 

- Continuos Drain Source Voltage         60V 

- On-State Resistance                           200mΩ 

- Nominal Load Current (VIN = 5V)        1.8A 

- Clamping Energy                                 210mJ 

## **Features and Benefits** 

- Compact Dual Package 

- Low Input Current 

- Logic Level Input (3.3V and 5V) 

- Short Circuit Protection with Auto Restart 

- Over Voltage Protection (active clamp) 

## **Description** 

The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6005DT8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. 

## **Applications** 

- Lamp Driver 

- Motor Driver 

- Relay Driver 

- Solenoid Driver 

- Thermal Shutdown with Auto Restart 

- Over-Current Protection 

- Input Protection (ESD) 

- High Continuous Current Rating 

- **Lead-Free Finish; RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **AEC-Q101-006 Short Circuit Reliability Characterized** 

- • **PPAP Capable (Note 4)** 

## **Mechanical Data** 

- Case: SM-8 

- Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

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• Terminals: Matte Tin Finish  e3<br>• Weight: 0.117 grams (approximate)<br>SM-8  D1 D2 1<br>IN1 D1<br>S1 D1<br>IN1 IN2 IN2 D2<br>S2 D2<br>Mm Bese S1 S2<br>Top View<br>Top View  Device Symbol<br>Pin-Out<br>g Information Information (Note 4)<br>Product  Marking Reel size (inches) Tape width (mm) Quantity per reel<br>ZXMS6005DT8TA ZXMS6005D  7  12  1,000<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 4) 

- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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Pin 1<br>ZXMS ZXMS6005D = Product Type Marking Code<br>6005D<br>Top View<br>**----- End of picture text -----**<br>


IntelliFET[®] is a registered trademark of Diodes Incorporated. ZXMS6005DT8 Document number: DS32248  Rev. 4 - 2 

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**ZXMS6005DT8** [| 

## recon een arse 

## **Functional Block Diagram** 

## **Application Information** 

- Two completely isolated independent channels 

- Especially suited for loads with a high in-rush current such as lamps and motors 

- All types of resistive, inductive and capacitive loads in switching applications 

- μC compatible power switch for 12V DC applications 

- Automotive rated 

- Replaces electromechanical relays and discrete circuits 

- Linear Mode Capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low VDS 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Continuous Drain-Source Voltage|VDS|60|V|
|Drain-Source Voltage For Short Circuit Protection|VDS(SC)|24|V|
|Continuous Input Voltage|VIN|-0.5 to +6|V|
|Continuous Input Current @ -0.2V ≤ VIN≤ 6V<br>Continuous Input Current @VIN< -0.2V or VIN> 6V|IIN|No limit<br>│IIN │≤2|mA|
|Pulsed Drain Current @VIN= 3.3V(Note 7)|IDM|5|A|
|Pulsed Drain Current @VIN= 5V(Note 7)|IDM|6|A|
|Continuous Source Current (BodyDiode)  (Note 5)|IS|2.5|A|
|Pulsed Source Current (BodyDiode)|ISM|10|A|
|Unclamped Single Pulse Inductive Energy,<br>TJ= +25°C, ID= 0.5A, VDD= 24V|EAS|210|mJ|
|Electrostatic Discharge (Human BodyModel)|VESD|4000|V|
|Charged Device Model|VCDM|1000|V|



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**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Power Dissipation at TA= +25°C (Notes 5 & 8)<br>Linear DeratingFactor|PD|1.16<br>9.28|W<br>mW/°C|
|Power Dissipation at TA= +25°C  (Notes 5 & 9)<br>Linear DeratingFactor|PD|1.67<br>13.3|W<br>mW/°C|
|Power Dissipation at TA= +25°C  (Notes 6 & 8)<br>Linear DeratingFactor|PD|2.13<br>17|W<br>mW/°C|
|Thermal Resistance, Junction to Ambient (Notes 5 & 8)|RθJA|108|°C/W|
|Thermal Resistance, Junction to Ambient (Notes 5 & 9)|RθJA|75|°C/W|
|Thermal Resistance, Junction to Case (Notes 6 & 8)|RθJC|58.7|°C/W|
|Thermal Resistance, Junction to Case (Note 10)|RθJC|26.5|°C/W|
|OperatingTemperature Range|TJ|-40 to +150|°C|
|Storage Temperature Range|TSTG|-55 to +150|°C|



Notes: 5. For a dual device surface mounted on a 25mm x 25mm single sided 1oz weight copper split down the middle on 1.6mm FR4 board, in still air conditions. 

6. For a dual device surface mounted on FR4 PCB measured at t ≤ 10sec. 

7. Repetitive rating25mm x 25mm FR4 PCB, D = 0.02, Pulse width = 300µs – pulse width limited by junction temperature. Refer to transient thermal impedance graph. 

8. For a dual device with one active die. 

9. For a dual device with 2 active die running at equal power. 

10. Thermal resistance from junction to the mounting surface of the drain pin. 

## **Recommended Operating Conditions** 

The ZXMS6005DT8 is optimized for use with µC operating from 3.3V and 5V supplies. 

|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|
|Input Voltage Range|VIN|0|5.5|V|
|Ambient Temperature Range|TA|-40|+125|°C|
|High Level Input Voltage for MOSFET to be on|VIH|3|5.5|V|
|Low Level Input Voltage for MOSFET to be off|VIL|0|0.7|V|
|Peripheral SupplyVoltage(voltage to which load is referred)|VP|0|24|V|



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'n ¢c oO R PO RA TED DIODES. 

**ZXMS6005DT8** ~~7~~ 

## **Thermal Characteristics** 

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10 F Limited  imitea =H OveLimited Limited by Over byr-Cur -Current Protection rentProtection =} 1.6 PN<br>=— 10 1 ees. by R Limes DS peor) (on)  (LPeeee a leee|J 1ms ims 1 1.41.2 PN ~ 2 active die<br>SPAN Cc 1 —————— 1.0 pNP<br>DC Single Pulse 0.8<br>s HOC 1s Hs 100ms PRSnen Tamb=25°C ~ SN<br>100m 0.6<br>6 oe 25X25X1.6mm FR4 ims 10ms 0.4 1 active die PWN<br>‘a Single Single 1oz Cu Pulse. tf SS<br>0.2<br>—P TOME 10m see One active die Note (aya) =,_Limitof Limit of s/c protection sic protection == 0.0 i<br>1 1 10 10 0 25 50 75 100 125 150<br>Vg VDS  Drain-Source Voltage (V) Drain-Source Voltage (\V/)  Temperature (°C)<br>Safe Safe Operating Area Operating Area Derating Curve<br>120 25X25X1.6mm FR4 TL NLU ooo<br>100 One active dieSingle 1oz Cu ATE Cue 100 PNA\ LI Ul 25X25X1.6mm FR4 Single 1oz Cu ill<br>80 T amb =25°C One active dieSingle Pulse<br>D=0.5 CEM TUT TTae ri rl (met| TTT iCIN Tamb=25 ° C CoCail<br>60<br>wu TON CIC 10 CH TT ail<br>40 EAE D=0.2 LegfeS Single Pulse eee a|BoC Aeee<br>20 imateoo pire D=0.05 tt aB00<br>D=0.1<br>Sati ee callll Th ili  UT<br>0 ot or 1 TRARE<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>ID<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~|~~|**Symbol**<br>~~|~~|**Min**<br>~~|~~|**Typ**<br>~~|~~|**Max**<br>~~|~~|**Unit**<br>~~|~~|**Test Condition**<br>~~|~~|
|**Static Characteristics**<br>~~a~~|||||||
|Drain-Source ClampVoltage<br>~~a~~<br>~~ee~~|VDS(AZ)<br>~~a~~<br>~~ee~~|60<br>~~a~~<br>~~ee~~|65<br>~~a~~<br>~~ee~~|70<br>~~a~~<br>~~ee~~|V<br>~~a~~<br>~~ee~~|ID= 10mA<br>~~a~~<br>~~ee~~|
|Off State Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~<br>~~CO~~|VDS= 12V, VIN= 0V<br>~~ee~~|
|||—<br>~~ee~~<br>~~GO~~|—<br>~~ee~~<br>~~GO~~|2<br>~~ee~~<br>~~CO~~||VDS= 36V, VIN= 0V<br>~~ee~~|
|Input Threshold Voltage<br>~~GO~~|VIN(th)<br>~~GO~~|0.7<br>~~GO~~<br>~~GO~~|1<br>~~GO~~<br>~~GO~~|1.5<br>~~GO~~<br>~~CO~~|V<br>~~GO~~<br>~~CO~~|VDS= VGS, ID= 1mA<br>~~GO~~|
|Input Current<br>~~ee~~<br>~~a~~|IIN<br>~~ee~~<br>~~GG~~|—<br>~~GO~~<br>~~ee~~|60<br>~~GO~~<br>~~ee~~|100<br>~~CO~~<br>~~ee~~|µA<br>~~CO~~<br>~~ee~~<br>~~GO~~|VIN= +3V<br>~~ee~~|
|||—<br>~~ee~~<br>~~G~~|120<br>~~ee~~<br>~~CO~~|200<br>~~ee~~<br>~~GO~~||VIN= +5V<br>~~ee~~<br>~~CO~~|
|Input Current while Over Temperature Active<br>~~a~~|—<br>~~GG~~|—<br>~~G~~|—<br>~~CO~~|300<br>~~GO~~|µA<br>~~GO~~|VIN= +5V<br>~~CO~~|
|Static Drain-Source On-State Resistance<br>~~a~~<br>~~ee~~|RDS(on)<br>~~GG~~<br>~~ee~~|—<br>~~G~~<br>~~ee~~|170<br>~~CO~~<br>~~ee~~|250<br>~~GO~~<br>~~ee~~|mΩ<br>~~GO ~~<br>~~ee~~|VIN= +3V, ID= 1A<br> ~~CO~~<br>~~ee~~|
|||—<br>~~ee~~|150<br>~~ee~~|200<br>~~ee~~||VIN= +5V, ID= 1A<br>~~ee~~|
|Continuous Drain Current (Notes 5 & 9)<br>~~a~~|ID<br>~~a~~<br>~~—~~|1.4<br>~~a~~|—<br>~~a~~|—<br>~~a~~|A<br>~~a~~<br>~~—~~|VIN= 3V; TA= +25°C<br>~~a~~|
|||1.6<br>~~a~~|—<br>~~a~~|—<br>~~a~~||VIN= 5V; TA= +25°C<br>~~a~~|
|Continuous Drain Current (Notes 5 & 8)<br>~~—~~||1.7<br>~~—~~|—<br>~~—~~|—<br>~~—~~||VIN= 3V; TA= +25°C<br>~~—~~|
|||1.8<br>~~—~~|—<br>~~—~~|—<br>~~—~~||VIN= 5V; TA= +25°C<br>~~—~~|
|Current Limit (Note 11)|ID(LIM)|2.2|5|—|A|VIN= +3V|
|||3.3|7|—||VIN= +5V|
|**Dynamic Characteristics**|||||||
|Turn On DelayTime<br>~~**—**~~|td(on)<br>~~**—**——~~|—<br>~~——~~|6<br>~~——~~|—<br>~~——~~|µs<br>~~——~~|VDD= 12V, ID= 1A, VGS= 5V<br>~~——~~<br>~~rr~~|
|Rise Time<br>~~**—**~~|tr<br>~~**—**——~~|—<br>~~——~~|14<br>~~——~~|—<br>~~——~~|µs<br>~~——~~||
|Turn Off DelayTime<br>~~**—**~~<br>~~———~~|td(off)<br>~~**—**——~~<br>~~———~~|—<br>~~——~~<br>~~———~~|34<br>~~——~~<br>~~———~~|—<br>~~——~~<br>~~———~~|µs<br>~~——~~<br>~~———~~||
|Fall Time<br>~~**—**~~<br>~~———~~<br>~~rr~~|ff<br>~~**—**——~~<br>~~———~~<br>~~rr~~|—<br>~~——~~<br>~~———~~<br>~~rr~~|19<br>~~——~~<br>~~———~~<br>~~rr~~|—<br>~~——~~<br>~~———~~<br>~~rr~~|µs<br>~~——~~<br>~~———~~<br>~~rr~~||
|**Over-Temperature Protection**<br>~~rr~~|||||||
|Thermal Overload TripTemperature (Note 12)<br>~~rr~~|TJT<br>~~rr~~|150<br>~~rr~~|175<br>~~rr~~|—<br>~~rr~~|°C<br>~~rr~~|—<br>~~rr~~|
|Thermal Hysteresis (Note 12)<br>~~rr~~|ff<br>~~rr~~|—<br>~~rr~~|10<br>~~rr~~|—<br>~~rr~~|°C<br>~~rr~~|—<br>~~rr~~|



12. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods. 

IntelliFET[®] is a registered trademark of Diodes Incorporated. ZXMS6005DT8 Document number: DS32248  Rev. 4 - 2 

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**ZXMS6005DT8** 

## **Typical Characteristics** 

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9<br>8 TeeS 5V 4.5V =a TA = 25°C 120 aa A<br>7 a 4V 100 a<br>6 iOS — 3.5V __[eae A<br>PE EES 80 a<br>5 po 3V es<br>4 Ht 2.5V |! EE 60 a<br>3 HA EEE EEE 2V EEE 40 ee<br>21 ‘||igggoo SSeSean VIN 20 PFeeP|of of| ee|| eeXW|eehw| TT| ff]<br>po 1.5V ac<br>0 ABBE C4 0 a ae ee eeeee<br>0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5<br>VDS  Drain-Source Voltage (V) VIN Input Voltage (V)<br>Typical Output Characteristic Input Current vs Input Voltage<br>1.4<br>a<br>ID = 1A 1.3 a V IN  = V DS<br>0.4 aS I D  = 1mA<br>1.2 a eS<br>a<br>1.1 a<br>0.2 T J  = 150°C 1.0 aaa<br>aGC<br>0.9 a<br>TJ = 25°C aa<br>0.0 0.8 a<br>2.0 2.5 3.0 3.5 4.0 4.5 5.0 -75 -50 -25 0 25 50 75 100 125 150<br>VIN  Input Voltage (V) TJ  Junction Temperature (°C)<br>A)<br>µ<br>  Drain Current (A)<br>ID  Input Current (IIN<br>)Ω<br> On-Resistance (<br>DS(on)   Threshold Voltage (V)<br>R TH<br>V<br>**----- End of picture text -----**<br>


## **On-Resistance vs Input Voltage** 

## **Threshold Voltage vs Temperature** 

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0.40 10<br>0.35<br>0.30 T J =150°C<br>0.25 VIN = 3V sa 1 nal v4; anne<br>0.20 PaneSi 4 a 2a eS 2<br>0.15 pee 0.1 ff T J =25°C<br>0.10 V IN  = 5V<br>| ee SSeS<br>0.05<br>| 7] | | aSS<br>0.00 | | | | dt | ct 0.01 Ae<br>-75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2<br>TJ  Junction Temperature (°C)  VSD  Source-Drain Voltage (V)<br>On-Resistance vs Temperature Reverse Diode Characteristic<br>)Ω<br> On-Resistance (<br>  Source Curent (A)<br>DS(on) S<br>R  I<br>**----- End of picture text -----**<br>


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**ZXMS6005DT8** _— 

## DrODES 

## **Typical Characteristics** (cont.) 

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12 12<br>I D =1A V I D =1A<br>10 coy V | | tft | | 10 | | tt DS |<br>Kt HA tA DS | ttt+H oe<br>| [|] tt | {| it |<br>8 | tt ty ft 8 | | yy | | fT hE hE TT TT<br>| | | iV |} ft | | tT Ty ft P| Wt | | dP cP dT Ph | hE<br>| {He | | ft | hdT ht hE TT tI | | itt | | | dT hdT ThE TT<br>6 Pt TY |] | dP dT dT TT Ty fT 6 | | itt | | | | dT ht TT PT<br>| | {| tt | ft fT tT ty tt Pt [yee]<br>4 V IN 4 V IN<br>eee | | |At| | f {|<br>2 P|| | f PeINE | tt tTPottT tTTt 2 || || {MEyt | | | | ft| | | [dT] dT || ddT T |Ttt<br>Se aeNE eee eee Pt}TV tT tt | tt TT<br>0 0<br>-50 0 50 100 150 200 250 300 -50 0 50 100 150 200 250 300<br>Time (µs) Time (µs)<br>Switching Speed Switching Speed<br>8 V IN  = 5V<br>| | | |<br>V DS = 15V<br>| f | |<br>6 2 RD = 0Ω<br>| op Sw |<br>4 orien<br>esee<br>2<br>eees [ee][ee] 0h |||| ||<br>0<br>ee ee eee 2 h |||<br>0 5 10 15<br>Time (ms)<br>Typical Short Circuit Protection<br>Drain-Source Voltage (V) Drain-Source Voltage (V)<br>  Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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7 A1<br>A<br>i Seating Plane fe SM-8<br>Dim  Min  Max  Typ<br>| 3 ——— A  -- 1.70  1.60<br>A1  0.02  0.10  0.04<br>; D - tt b  0.70  0.90  0.80<br>e1 c  0.24  0.32  0.28<br>D  6.30  6.70  6.60<br>4 L ———— e  1.53 REF<br>i [oonne] e1  4.59 REF  —<br>E  6.70 7.30 7.00<br>TUT | ga E1  3.30 3.70 3.50<br>ø L  0.75 1.00 0.90<br>Ø -- --  45°<br>E E1 Ø1  -- 15° --<br>Ø2  -- -- 10°<br>All Dimensions in mm<br>_| i b Wo_ e | . ø1 o ay d ø2 c<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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Y<br>000<br>C1<br>Y1<br>X C<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C 1.52<br>C1  4.60<br>X  0.95<br>Y  2.80<br>Y1  6.80<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

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## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

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IntelliFET[®] is a registered trademark of Diodes Incorporated. ZXMS6005DT8 Document number: DS32248  Rev. 4 - 2 

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