ZXMS6004DN8-13

Dual MOSFET, N Channel, 60 V, 60 V, 1.2 A, 1.2 A, 0.35 ohm

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Manufacturer: DIODES INC.
Product type: Dual MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: IntelliFET Series
Qualification: -
Transistor Case Style: SOIC
Operating Temperature Max: 150°C
Power Dissipation N Channel: 1.21W
Power Dissipation P Channel: 1.21W
Drain Source Voltage Vds N Channel: 60V
Drain Source Voltage Vds P Channel: 60V
Continuous Drain Current Id N Channel: 1.2A
Continuous Drain Current Id P Channel: 1.2A
Drain Source On State Resistance N Channel: 0.35ohm
Drain Source On State Resistance P Channel: 0.35ohm
Delivery and price
Units per pack	7500
Price	0.343 €
Current stock	10+
Lead time	30 days
Datasheet
1m 

**ZXMS6004DN8** 

## **60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE** _**INTELLIFET[® ]**_ **MOSFET** 

## **Product Summary** 

- Continuos Drain-Source Voltage: 60V 

- On-State Resistance: 500mΩ 

- Nominal Load Current (VIN = 5V): 1.3A 

- Clamping Energy: 120mJ 

## **Features and Benefits** 

- Low Input Current 

- Logic Level Input (3.3V and 5V) 

- Short Circuit Protection with Auto Restart 

- Overvoltage Protection (Active Clamp) 

- Thermal Shutdown with Auto Restart 

## **Description** 

The ZXMS6004DN8 is a dual self-protected low side MOSFET with logic level input. It integrates over-temperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004DN8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. 

## **Applications** 

- Lamp Driver 

- Motor Driver 

- Relay Driver 

- Solenoid Driver 

- Overcurrent Protection 

- Input Protection (ESD) 

- High Continuous Current Rating 

- **Totally Lead-Free; RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

- Case: SO-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish 

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 Weight: 79.1 mg (Approximate)<br>SO-8<br>D1 D2<br>S1 mn im D1<br>IN1 mn im D1<br>IN1 IN2 S2 mn (TJ D2<br>& IN2 mn I D2<br>or<br>S1 S2<br>Top View<br>Top View  Device Symbol  Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|---|
||||||
|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|ZXMS6004DN8-13|6004DN8|13|12|2,500 units|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

6004DN8 = Product name 

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Logo<br>Part No. Saam ee 6004DN8 YY: Year<br>YY WW  WW: Week: 01~52;<br>Pin 1. el l 1°) 52 represents 52 and 53 week<br>| | | |<br>ry U U Ul<br>Top View<br>**----- End of picture text -----**<br>


_IntelliFET is a registered trademark of Diodes Incorporated._ 

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**ZXMS6004DN8** sd 

## recone om AT ee 

## **Functional Block Diagram** 

## **Application Information** 

- Two completely isolated independent channels 

- Especially suited for loads with a high in-rush current such as lamps and motors 

- All types of resistive, inductive and capacitive loads in switching applications 

- μC compatible power switch for 12V and 24V DC applications 

- Replaces electromechanical relays and discrete circuits 

- Linear Mode Capability — the current-limiting protection circuitry is designed to deactivate at low VDS to minimize on-state power dissipation The maximum DC operating current is therefore determined by the thermal capability of the package or board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low VDS 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise stated.) 

|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise stated.)A = +25°C, unless otherwise stated.)= +25°C, unless otherwise stated.)|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise stated.)A = +25°C, unless otherwise stated.)= +25°C, unless otherwise stated.)|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise stated.)A = +25°C, unless otherwise stated.)= +25°C, unless otherwise stated.)|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise stated.)A = +25°C, unless otherwise stated.)= +25°C, unless otherwise stated.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Continuous Drain-Source Voltage|VDS|60|V|
|Drain-Source Voltage For Short Circuit Protection|VDS(SC)|36|V|
|Continuous Input Voltage|VIN|-0.5 to +6|V|
|Continuous Input Current @ -0.2V ≤ VIN≤ 6V<br>Continuous Input Current @VIN< -0.2V or VIN> 6V|IIN|No limit<br>│IIN │≤2|mA|
|Pulsed Drain Current @VIN= 3.3V|IDM|2|A|
|Pulsed Drain Current @VIN= 5V|IDM|2.5|A|
|Continuous Source Current (BodyDiode)  (Note 5)|IS|1|A|
|Pulsed Source Current (Body Diode)|ISM|5|A|
|Unclamped Single Pulse Inductive Energy,<br>TJ= +25°C, ID= 0.5A, VDD= 24V|EAS|120|mJ|
|Electrostatic Discharge (Human BodyModel)|VHBM|4,000|V|
|Charged Device Model|VCDM|1,000|V|



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**ZXMS6004DN8** 

## **Thermal Characteristics** 

|**Thermal Characteristics **||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Power Dissipation at Tamb= +25°C (Note 5)<br>Linear DeratingFactor|PD|1.21<br>9.7|W<br>mW/°C|
|Power Dissipation at Tamb= +25°C (Note 6)<br>Linear DeratingFactor|PD|1.56<br>12.5|W<br>mW/°C|
|Thermal Resistance,Junction to Ambient (Note 5)|RθJA|103|°C/W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|81|°C/W|
|Thermal Resistance,Junction to Case (Note 7)|RθJC|13.5|°C/W|
|OperatingTemperature Range|TJ|-40 to +150|°C|
|Storage Temperature Range|TSTG|-55 to +150|°C|



Notes:        5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 

7. Thermal resistance between junction and the mounting surfaces of drain and source pins. 

## **Recommended Operating Conditions** 

The ZXMS6004DN8 is optimized for use with µC operating from 3.3V and 5V supplies. 

|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|
|Input Voltage Range|VIN|0|5.5|V|
|Ambient Temperature Range|TA|-40|+125|°C|
|High Level Input Voltage for MOSFET to be On|VIH|3|5.5|V|
|Low Level Input Voltage for MOSFET to be Off|VIL|0|0.7|V|
|Peripheral SupplyVoltage(voltage to which load is referred)|VP|0|36|V|



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## **Thermal Characteristics** (Continued) 

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10<br>Id(A) @ DC    2.50<br>Id(A)  IF(A)-MRP(1)<br>@Pw=10s<br>a Id(A)<br>@Pw=1s   2.00<br>IF(A)-1 inch(2)<br>Id(A)<br>Rds(on)  @Pw=100ms<br>1  TROT Limited  Id(A)  aN<br>@Pw=10<br>ms   1.50<br>Id(A)<br>@Pw=1ms<br>RC eee NN NT Id(A) @Pw=100<br>us<br>ETE NSS 1.00  R A<br>CACTITTht ANN NA<br>0.1  IEELT NON] 0.50  aN<br>Tj,(Max)=150 ℃<br>SasiEE EENmere asl Ta=25 ℃ ,  0.00  aaeN‘\<br>0.01  TTT ECE ITE Vgs=5V Single Pulse  0  25  50  75  100  125  150<br>0.1  1  10  100<br>Vds, Drain-Source Voltage (V)  TA, Ambient Temperature (℃)<br>SOA, Safe Operation Area  Figure. DC Forward Current Derating<br>1<br>800<br>Single Pulse<br>Si aser pean ot an 700  SUT Rthja=108C/W  |<br>r(t) @ D=0.9  Rthja(t)=Rthja * r(t)<br>Tj-Ta=P * Rthja (t)<br>CT ea r(t) @ D=0.7  600  SUI |<br>0.1  r(t) @ D=0.5<br>Ee alll r(t) @ D=0.3  | 500  SCN ATA TA<br>Stanaeee r(t) @ D=0.1<br>Sreea0? dimeneee at r(t) @ D=0.05  400  \<br>r(t) @ D=0.02<br>CLEA ath Ue<br>r(t) @ D=0.01  300<br>0.01<br>a aTIE TTTT r(t) @ D=0.005  || BAN\ A a<br>r(t) @ D=Single Pulse  200<br>Rthja(t)=r(t) * Rthja<br>ST att men a Rthja=108C/W  t m 100  SUNSET TAT<br>Duty Cycle, D=t1 /  t2<br>0.001  UNfa e il 0  A \NU<br>0.00001 0.0001 0.001  0.01  0.1  1  10  100  1000  0.00001 0.0001 0.001  0.01  0.1  1  10  100  1000<br>t1, Pulse Duration Time (sec)  t1, Pulse Duration Time (sec)<br>Figure:  Transient Thermal Resistance  Figure 1:  Pulse Power Dissipation<br>Id, Drain Current (A)<br>IF, DC Forward Current(A)<br>r(t), Transient Thermal Resistance<br>P(pk), Peak Transient Power (W)<br>**----- End of picture text -----**<br>


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## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**Static Characteristics**<br>~~ee~~|||||||
|Drain-Source ClampVoltage<br>~~ee~~|VDS(AZ)<br>~~ee~~<br>~~ee~~|60<br>~~ee~~<br>~~ee~~|65<br>~~ee~~<br>~~ee~~|70<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|ID= 10mA<br>~~ee~~<br>~~ee~~|
|Off-State Drain Current<br>~~ee~~|IDSS<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|1<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~<br>~~(S(O~~|VDS= 12V, VIN= 0V<br>~~ee~~<br>~~ee~~|
|||—<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|2<br>~~ee~~<br>~~ee~~<br>~~(S(O~~||VDS= 36V, VIN= 0V<br>~~ee~~<br>~~ee~~|
|Input Threshold Voltage<br>~~GO~~|VIN(th)<br>~~ee~~<br>~~GO~~<br>~~es~~|0.7<br>~~ee ~~<br>~~GO~~<br>~~es~~|1<br> ~~ee~~<br>~~GO~~<br>~~ee~~|1.5<br>~~ee~~<br>~~GO~~<br>~~(S(O~~<br>~~ee~~|V<br>~~ee~~<br>~~GO~~<br>~~(S(O~~<br>~~ee~~|VDS= VGS, ID= 1mA<br>~~ee~~<br>~~GO~~<br>~~ee~~|
|Input Current<br>~~ee~~|IIN<br>~~ee~~<br>~~es~~|—<br>~~ee~~<br>~~es~~|60<br>~~ee~~<br>~~ee~~|100<br>~~(S(O~~<br>~~ee~~<br>~~ee~~|µA<br>~~(S(O~~<br>~~ee~~<br>~~ee~~<br>~~(S(O~~|VIN= +3V<br>~~ee~~<br>~~ee~~|
|||—<br>~~ee~~<br>~~es~~|120<br>~~ee~~<br>~~ee~~|200<br>~~ee~~<br>~~ee~~<br>~~(S(O~~||VIN= +5V<br>~~ee~~<br>~~ee~~|
|Input Current while Over-Temperature Active<br>~~GO~~<br>~~———~~|—<br>~~es~~<br>~~GO~~|—<br>~~es ~~<br>~~GO~~<br>~~ee ee~~|—<br> ~~ee~~<br>~~GO~~<br>~~ee~~|300<br>~~ee~~<br>~~GO~~<br>~~(S(O~~<br>~~ee~~|µA<br>~~ee~~<br>~~GO~~<br>~~(S(O~~<br>~~ee~~|VIN= +5V<br>~~ee~~<br>~~GO~~<br>~~ee~~|
|Static Drain-Source On-State Resistance<br>~~ee~~<br>~~———~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~<br>~~ee ee~~|400<br>~~ee~~<br>~~ee~~|600<br>~~(S(O~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~(S(O~~<br>~~ee~~<br>~~ee~~|VIN= +3V, ID= 1A<br>~~ee~~<br>~~ee~~|
|||—<br>~~ee~~<br>~~ee ee~~|350<br>~~ee~~<br>~~ee~~|500<br>~~ee~~<br>~~ee~~||VIN= +5V, ID= 1A<br>~~ee~~<br>~~ee~~|
|Continuous Drain Current (Notes 5)<br>~~———~~<br>~~ee~~|ID<br> ~~ee~~<br>~~es~~|0.9<br>~~ee ee~~<br>~~EPP~~<br>|—<br>~~ee~~<br>~~EPP~~<br>|—<br>~~ee~~<br>~~EPP~~<br>|A<br>~~ee~~<br><br>~~ee~~|VIN= 3V; TA= +25°C<br>~~ee~~<br>|
|||1.0<br>~~ee ee~~<br>~~EPP~~<br>~~es~~|—<br>~~ee~~<br>~~EPP~~<br>~~ee~~|—<br>~~ee~~<br>~~EPP~~<br>~~es~~||VIN= 5V; TA= +25°C<br>~~ee~~<br>~~ee~~|
|Continuous Drain Current (Note 5)<br>~~———~~<br>~~ee ~~||1.1<br>~~ee ee~~<br>~~EPP~~<br>~~es~~|—<br>~~ee~~<br>~~EPP~~<br>~~ee~~|—<br>~~ee~~<br>~~EPP~~<br>~~es~~||VIN= 3V; TA= +25°C<br>~~ee~~<br>~~ee~~|
|||1.2<br>~~ee ee~~<br>~~EPP~~<br>~~es~~<br>~~es~~|—<br>~~ee~~<br>~~EPP~~<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~EPP~~<br>~~es~~<br>~~ee~~||VIN= 5V; TA= +25°C<br>~~ee~~<br>~~ee~~|
|Current Limit (Note 8)<br>~~———~~<br> <br>~~ee~~|ID(LIM)<br> ~~ee ~~<br>~~ee~~<br>~~es~~|0.7<br>~~ee ee~~<br> ~~es ~~<br>~~ee~~<br>~~es~~|1.7<br>~~ee~~<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|—<br>~~ee ~~<br> ~~es ~~<br>~~ee~~<br>~~ee~~|A<br> ~~ee~~<br> <br>~~ee~~<br>~~ee~~|VIN= +3V<br>~~ee~~<br> ~~ee~~<br>~~ee~~|
|||1<br>~~ee~~<br>~~es~~|2.2<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~||VIN= +5V<br>~~ee~~|
|**Dynamic Characteristics**<br>~~es ee~~|||||||
|Turn On DelayTime<br>~~a———~~|td(on)<br>~~———~~|—<br>~~———~~|5<br>~~———~~|—<br>~~———~~|µs<br>~~———~~|VDD= 12V, ID= 0.5A, VGS= 5V<br>~~———~~|
|Rise Time<br>~~———~~|tr<br>~~———~~|—<br>~~———~~|10<br>~~———~~|—<br>~~———~~|µs<br>~~———~~||
|Turn Off DelayTime<br>~~———~~|td(off)<br>~~———~~|—<br>~~———~~|45<br>~~———~~|—<br>~~———~~|µs<br>~~———~~||
|Fall Time<br>~~———~~|ff<br>~~———~~|—<br>~~———~~|15<br>~~———~~|—<br>~~———~~|µs<br>~~———~~||
|**Over-Temperature Protection**|||||||
|Thermal Overload TripTemperature (Note 9)<br>~~ee~~|TJT<br>~~ee~~|+150<br>~~ee~~|+175<br>~~ee~~|—<br>~~ee~~|°C<br>~~ee~~|—<br>~~ee~~|
|Thermal Hysteresis (Note 9)<br>~~ee~~|ff<br>~~ee~~|—<br>~~ee~~|+10<br>~~ee~~|—<br>~~ee~~|°C<br>~~ee~~|—<br>~~ee~~|



Notes: 8. The drain current is restricted only when the device is in saturation (see graph ”Typical Output Characteristic”). This allows the device to be used in the on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 

9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods. 

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**ZXMS6004DN8** 

## **Typical Characteristics** 

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## Lr 

## **Typical Characteristics** (Continued) 

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**----- Start of picture text -----**<br>
12 12<br>I D =1A V I D =1A<br>10 |Ht| TyH V et|| EEin 10 |mimi | DS |tte| {| +H| |if<br>DS<br>| |<br>8 | | | y | {|| | | fttttT tT t ete ft 8 mimiPt it tT| tT[| tTtttt| tT tt pe<br>pt Ty tT tT tT tt tT ey Pt yt tT tt tT TT<br>6 pt Ty | tt tt tT Te 6 Pt ttt | thE tt<br>pt tt tT tT tT tt tt te Pt<br>4 V IN 4 V IN<br>2 eeP|Pty ENTiNGe| tT tT etLtteTiei | tt 2 Ht}PtPttttyy | | || | | | rtcP$4 EThhc TT| | f |<br>| | | | AT tT tt ttFt PtTy | tT | ET TT [TT] ft Tt<br>0 Pty tTST| 0 PTleet | |<br>-50 0 50 100 150 200 250 300 -50 0 50 100 150 200 250 300<br>Time (s) Time (s)<br>Switching Speed Switching Speed<br>Drain-Source Voltage (V) Drain-Source Voltage (V)<br>**----- End of picture text -----**<br>


## **Switching Speed** 

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8 V IN  = 5V<br>ra a5], ee es | ee ee eee Vi. . V = DS 154  = 15V<br>re= 30,7 6 ee ee 7 ee T TTee eee 2 a-00 RD = 0<br>5S os fh | | TT T= 25881<br>. | A [TT]<br>5S oo TRE PP<br>oO 4 eeee ee<br>i= eeeeee eee ||<br>2<br>Oo ao] ee [ ee 7 Tnee eee ||<br>-oos-] | | |TTP<br>ee ee ee eee ||<br>9.9 0 Dn<br>0 0 5 5 10 10 15 15 20<br>Time (ms) Time (ms)<br>Typical Short Circuit Protection Typical Short Circuit Protection<br>  Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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**ZXMS6004DN8** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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SO-8<br>SO-8<br>Dim  Min  Max<br>A  —  1.75<br>A1  0.10  0.20<br>E1 E A2  1.30  1.50<br>Gauge Plane A3  0.15  0.25<br>A1 L Seating Plane b  0.3 0.5<br>D  4.85 4.95<br>Detail ‘A’ E  5.90 6.10<br>E1  3.85 3.95<br>h 7°~9° e  1.27 Typ<br>45° h  —  0.35<br>Detail ‘A’ L  0.62  0.82<br>A2 A A3  0 8<br>e b —" All Dimensions in mm<br>D<br>0.254<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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SO-8<br>**----- End of picture text -----**<br>


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X<br>C1<br>C2<br>Y<br>TAG i<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>X  0.60<br>Y  1.55<br>C1  5.4<br>C2  1.27<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

9 of 9 **www.diodes.com** 

ZXMS6004DN8 Document number: DS38040  Rev. 2 - 2 

August 2015 © Diodes Incorporated
Updated at June 9, 2026
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