Image not available
Illustrative purposes only
ZXMP6A16DN8TA
Dual MOSFET, P Channel, 60 V, 60 V, 2.9 A, 2.9 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2.15W
- Power Dissipation P Channel: 2.15W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 2.9A
- Continuous Drain Current Id P Channel: 2.9A
- Drain Source On State Resistance N Channel: -
- Drain Source On State Resistance P Channel: 0.085ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.472 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
> **Green ZXMP6A16DN8** ~~& >~~ **DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET** ## **Product Summary** |**BVDSS**<br>**RDS(ON)Max**<br>**Package**<br>**ID **<br>**TA = +25°C**<br>(Notes 4 & 6)<br>-60V<br>85mΩ @ VGS= -10V<br>SO-8<br>-3.9A<br>125mΩ @ VGS= -4.5V<br>-3.2A|**BVDSS**<br>**RDS(ON)Max**<br>**Package**<br>**ID **<br>**TA = +25°C**<br>(Notes 4 & 6)<br>-60V<br>85mΩ @ VGS= -10V<br>SO-8<br>-3.9A<br>125mΩ @ VGS= -4.5V<br>-3.2A|**BVDSS**<br>**RDS(ON)Max**<br>**Package**<br>**ID **<br>**TA = +25°C**<br>(Notes 4 & 6)<br>-60V<br>85mΩ @ VGS= -10V<br>SO-8<br>-3.9A<br>125mΩ @ VGS= -4.5V<br>-3.2A|**BVDSS**<br>**RDS(ON)Max**<br>**Package**<br>**ID **<br>**TA = +25°C**<br>(Notes 4 & 6)<br>-60V<br>85mΩ @ VGS= -10V<br>SO-8<br>-3.9A<br>125mΩ @ VGS= -4.5V<br>-3.2A| |---|---|---|---| |**BVDSS**|**RDS(ON)Max**|**Package**|**ID **<br>**TA = +25°C**<br>(Notes 4 & 6)| |-60V|85mΩ @ VGS= -10V|SO-8|-3.9A| ||125mΩ @ VGS= -4.5V||-3.2A| ## **Features** - Low On-Resistance - Fast Switching Speed - Low Threshold - Low Gate Drive - Low Profile SOIC Package - **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** ## **Description** This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - **Qualified to AEC-Q101 Standards for High Reliability** - **An Automotive-Compliant Part is Available Under Separate Datasheet (ZXMP6A16DN8Q)** ## **Applications** - DC-DC Converters - Power Management Functions - Disconnect Switches - Motor Control ## **Mechanical Data** - Case: SO-8 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - Weight: 0.074 grams (Approximate) **==> picture [427 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>S1 D1 D1 D2<br>G1 D1<br>S2 D2 G1 G2<br>G2 D2<br>S1 S2<br>Top View Top View Equivalent Circuit<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)| |---|---|---| |||| |**Part Number**|**Case**|**Packaging**| |ZXMP6A16DN8TA|SO-8|500/Tape &Reel| |ZXMP6A16DN8TC|SO-8|2,500/Tape &Reel| Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** ZXMP6A16D = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 - 53) 1 of 8 **www.diodes.com** ZXMP6A16DN8 Document number: DS33586 Rev. 5 - 2 June 2016 © Diodes Incorporated **ZXMP6A16DN8** **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||| |---|---|---|---|---|---| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|||VDSS|-60|V| |Gate-Source Voltage||(Note 5)|VGS|20|V| |Continuous Drain Current|VGS= 10V|(Notes 7 & 9)|ID|-3.9|A| |||TA= +70°C<br>(Notes 7 & 9)||-3.1|| |||(Notes 6 & 9)||-2.9|| |Pulsed Drain Current||(Notes 8 & 9)|IDM|-18.3|A| |Continuous Source Current(BodyDiode)||(Notes 7 & 9)|IS|-3.2|A| |Pulsed Source Current(BodyDiode)||(Notes 8 & 9)|ISM|-18.3|A| ## **Thermal Characteristics** |**Thermal Characteristics**|**Thermal Characteristics**|||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Power Dissipation<br>Linear Derating Factor|(Notes 6 & 9)|PD|1.25<br>10.0|W<br>mW/°C| ||(Notes 6 & 10)||1.81<br>14.5|| ||(Notes 7 & 9)||2.15<br>17|| |Thermal Resistance, Junction to Ambient|(Notes 6 & 9)|RθJA|100|°C/W| ||(Notes 6 & 10)||70|| ||(Notes 7 & 9)||60|| |Thermal Resistance, Junction to Lead|(Notes 9 & 11)|RθJL|48.85|| |Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C| - Notes: 5. AEC-Q101 VGS maximum is 16V. 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Same as Note (5), except the device is measured at t 10 sec. 8. Same as Note (5), except the device is pulsed with D = 0.02 and pulse width 300µs. 9. For a dual device with one active die. 10. For a device with two active die running at equal power. 11. Thermal resistance from junction to solder-point. 2 of 8 **www.diodes.com** ZXMP6A16DN8 Document number: DS33586 Rev. 5 - 2 June 2016 © Diodes Incorporated **ZXMP6A16DN8** ' ## **Thermal Characteristics** (Continued) **==> picture [449 x 359] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>A OO<br>10 R DS(on) CU ee ee 1.8 a a<br>Limited 1.6<br>a —| & NL ~ sy NL [Ss 1.4 r<br>1 _————B24,eeeeSU a ell 1.2 SeeOOIRE Two active die<br>PCH DC SSE HH 1.0 SO<br>-— 1s ST SS a<br>100m 100ms 0.8<br>_—————— or 10ms ===Eoa — Hast 0.6 H+} + + +} PSS[ss<br>Single Pulse 1ms 2aeS 0.4 Ro One active die T |SSA|NENT<br>10m T amb =25°C anneI 100µs Baal aero 0.2 SNa TT Ty<br>One active die Sesere 2 SN<br>Coete 0.0 r | | | [| | | tT TT tT Tt tT hh Uf<br>100m 1 10 100 0 20 40 60 80 100 120 140 160<br>-VDS Drain-Source Voltage (V) Temperature (°C)<br>Safe Operating Area Derating Curve<br>110100 _]1 T amb =25 ° C TmCo TISoC STCoonSCTCo ThoCL Single Pulse HH<br>90 = One active die a 100 an! Tamb=25°C<br>80 One active die<br>7060 SAMACoCo D=0.5 CONN EaCO SERConAerin| Leet) tilagefi) CCCgn HIESeiitiiimeINNiiI mat KEmi avlaaHK EH<br>50 eePT eS, 10 UII LTTLT T INT TITETU<br>TCA Sas Sash eee SE ei<br>40 HA EHS<br>30 D=0.2 Single Pulse<br>SE iatiincyAZ Z a Ih iitt<br>20 D=0.05<br>Sc ET iene<br>10 1 ea Oi eat<br>a a D=0.1 UI TTT TTT EE a<br>0 TT Tl 1 1 See ee ee eT TT ec ToT<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br> Drain Current (A)<br>D<br>-I<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br> 3 of 8 **www.diodes.com** ZXMP6A16DN8 Document number: DS33586 Rev. 5 - 2 June 2016 © Diodes Incorporated **ZXMP6A16DN8** ## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---|---| ||||||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|| |**OFF CHARACTERISTICS**|||||||| |Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-60<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|ID= -250µA,VGS= 0V<br>~~ee~~|| |Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|-1.0<br>~~ee~~|µA<br>~~ee~~|VDS= -60V,VGS= 0V<br>~~ee~~|| |Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|100<br>~~ee~~|nA<br>~~ee~~|VGS=20V,VDS= 0V<br>~~ee~~|| |**ON CHARACTERISTICS**|||||||| |Gate Threshold Voltage|VGS(TH)|-1.0|||V|ID= -250µA,VDS= VGS|| |Static Drain-Source On-Resistance (Note 12)<br>~~OS~~|RDS(ON)<br>~~OS~~|<br>~~OS~~|<br>~~OS~~|85<br>~~OS~~|mΩ<br>~~OS~~|VGS= -10V,ID= -2.9A<br>~~OS~~|| ||||<br>~~OS~~|125<br>~~OS~~||VGS= -4.5V,ID= -2.4A<br>~~OS~~|| |Forward Transconductance(Notes 12 & 13)<br>~~a~~|gFS<br>~~a~~|<br>~~a~~|7.2<br>~~a~~|<br>~~a~~|S<br>~~a~~|VDS= -15V,ID= -2.9A<br>~~a~~|| |Diode Forward Voltage(Note 12)<br>~~a~~|VSD<br>~~a~~|<br>~~a~~|-0.85<br>~~a~~|-0.95<br>~~a~~|V<br>~~a~~|IS= -3.4A,VGS= 0V,TJ= +25°C<br>~~a~~|| |Reverse RecoveryTime(Note 13)<br>~~a~~|tRR<br>~~a~~|<br>~~a~~|29.2<br>~~a~~|<br>~~a~~|ns<br>~~a~~|IS= -2A, di/dt = 100A/µs,<br>TJ= +25°C<br>~~a~~|| |Reverse RecoveryCharge(Note 13)<br>~~a~~|QRR<br>~~a~~|<br>~~a~~|39.6<br>~~a~~|<br>~~a~~|nC<br>~~a~~||| |**DYNAMIC CHARACTERISTICS**(Note 14)|||||||| |Input Capacitance<br>~~po~~|CISS||1,021||pF|VDS= -30V, VGS= 0V,<br>f = 1MHz<br>~~ee~~|| |Output Capacitance|COSS||83.1||pF||| |Reverse Transfer Capacitance<br>~~——_—~~|CRSS<br>~~——_—~~||56.4||pF<br>~~e~~||| |Total Gate Charge<br>~~——_—~~|QG<br>~~——_—~~||12.1||nC<br>~~e~~|VGS= -5V<br>~~ee~~|VDS= -30V,<br>ID= -2.9A<br>~~e~~<br>~~ee~~| |Total Gate Charge<br>~~a~~<br>~~——_—~~|QG<br>~~a~~<br>~~——_—~~|<br>~~a~~|24.2<br>~~a~~|<br>~~a~~|nC<br>~~a~~<br>~~e~~|VGS= -10V<br>~~ee~~<br>~~ee~~|| |Gate-Source Charge<br>~~——_—~~|QGS<br>~~——_—~~||2.5||nC<br>~~e~~||| |Gate-Drain Charge<br>~~——_—~~<br>~~——~~|QGD<br>~~——_—~~||3.7|<br>~~ee~~|nC<br>~~e~~<br>~~ee~~||| |Turn-On DelayTime<br>~~——_—~~<br>~~——~~|tD(ON)<br>~~——_—~~||3.5|<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VDD= -30V, VGS= -10V,<br>ID= -1A, RG6.0Ω<br>~~ee~~<br>~~ee~~|| |Turn-On Rise Time<br>~~——_—~~<br>~~——~~|tR<br>~~——_—~~||4.1|<br>~~ee~~|ns<br>~~e~~<br>~~ee~~||| |Turn-Off DelayTime<br>~~——~~|tD(OFF)||35|<br>~~ee~~|ns<br>~~ee~~||| |Turn-Off Fall Time<br>~~——~~|tF||10|<br>~~ee~~|ns<br>~~ee~~||| Notes: 12. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2% 13. For design aid only, not subject to production testing. 14. Switching characteristics are independent of operating junction temperatures. 4 of 8 **www.diodes.com** ZXMP6A16DN8 Document number: DS33586 Rev. 5 - 2 June 2016 © Diodes Incorporated **ZXMP6A16DN8** ## **Typical Characteristics** **==> picture [435 x 338] intentionally omitted <==** **----- Start of picture text -----**<br> T = 25°C CLIT 10V ee 5V T = 150°C Coo 10V a 5V Le<br>4.5V 4V<br>10<br>10 hi) TateTy 4V SH SESSyellSS SEES eSeet SEES 3.5V a =<br>3.5V 3V<br>Se ae eee 3V 1 WUgre 2.5V<br>| AZ =<br>SL > Be aeee<br>1 -V GS<br>OO ——————————e 0.1 TT 0 2V<br>A 2.5V =.=...<br>-V<br>GS<br>0.1 ATTIC er | TI | ET 0.01 neCi<br>0.1 1 10 0.1 1 10<br>-VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1.8<br>V = -10V<br>10 1.6 GS<br>ID = - 2.9AD = - 2.9A = - 2.9A<br>a ee ee el<br>1.4<br>a<br>A R<br>1.2 DS(on)<br>1 T = 150°C T = 25°C 1.0<br>V<br>GS(th)<br>es A) Se ee 0.8<br>A,<br>an 0.6 V GS = V DS<br>-V = 10V<br>0.1 | SY [fl|] 4 Ae| DS 0.4 ID = -250uAD = -250uA = -250uA<br>2 3 4 -50 0 50 100<br>-VGS Gate-Source Voltage (V) Tj Junction Temperature (°C)<br> Drain Current (A) Drain Current (A)<br>D D<br>-I -I<br>GS(th)<br> and V<br>DS(on)<br> Drain Current (A)<br>D<br>-I Normalised R<br>**----- End of picture text -----**<br> **==> picture [213 x 154] intentionally omitted <==** **----- Start of picture text -----**<br> 1.8<br>V = -10V<br>1.6 GS<br>ID = - 2.9AD = - 2.9A = - 2.9A<br>1.4<br>R<br>1.2 DS(on)<br>1.0<br>V<br>GS(th)<br>0.8<br>V = V<br>0.6 GS DS<br>ID = -250uAD = -250uA = -250uA<br>0.4<br>-50 0 50 100 150<br>Tj Junction Temperature (°C)<br>GS(th)<br> and V<br>DS(on)<br>Normalised R<br>**----- End of picture text -----**<br> ## **Typical Transfer Characteristics** **Normalised Curves v Temperature** **==> picture [205 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> 10 ee 2.5V -V GS T = 25°C |<br>| tt 3V LU L_<br>PE 3.5V<br>Pr AP [tT 4V<br>1 AN<br>4.5V<br>Pt tr<br>|erTAY 5V<br>0.1<br>———S——ae 10V<br>0.1 1 10<br>-ID Drain Current (A)<br>On-Resistance v Drain Current<br> Drain-Source On-Resistance<br>DS(on)<br>R<br><br>**----- End of picture text -----**<br> **==> picture [210 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 1 0 nnn==<br>T = 150°C tb ot Att<br>1<br>Yl Yer<br>S55 5555 T = 25°C<br>0. 1 rr_——|7,= | sf [| | | [ |<br>Fe<br>——<br>0.0 1 P/7/i | F | [ [ | | |<br>0.4 0.6 0.8 1.0 1.2<br>-VSD Source-Drain Voltage (V)<br>Source-Drain Diode Forward Voltage<br> Reverse Drain Current (A)<br>SD<br>-I<br>**----- End of picture text -----**<br> 5 of 8 **www.diodes.com** ZXMP6A16DN8 Document number: DS33586 Rev. 5 - 2 June 2016 © Diodes Incorporated **ZXMP6A16DN8** ## **Typical Characteristics** (Continued) **==> picture [368 x 139] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1400 a V GS = 0V mM I D = -2.9A 1. 1.11.17<br>1200 ST f = 1MHz CH 8 FY<br>SSS<br>1000 C ISS<br>ee) [en] _. 6<br>800 eeHet C OSS EE + ++ 4<br>600 C RSS 4<br>400 mSRSOe ee | jij} if ET| | | |<br>200 SE 2<br>a A PA4 V DS = -30V<br>0 C=C ooo 0 Vy | | | | |-<br>0.1 1 10 0 5 10 15 20<br>-VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C Capacitance (pF)<br> Gate-Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br> ## **Test Circuits** 6 of 8 **www.diodes.com** ZXMP6A16DN8 Document number: DS33586 Rev. 5 - 2 June 2016 © Diodes Incorporated **ZXMP6A16DN8** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **==> picture [417 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8<br>SO-8<br>Dim Min Max<br>A - 1.75<br>E1 E A1 0.10 0.20<br>Gauge Plane A2 1.30 1.50<br>A1 L Seating Plane A3 0.15 0.25<br>b 0.3 0.5<br>Detail ‘A’ D 4.85 4.95<br>E 5.90 6.10<br>| Be<br>h 7°~9° E1 3.85 3.95<br>45° e 1.27 Typ<br>Detail ‘A’ h - 0.35<br>A2 A A3 L 0.62 0.82<br> 0 8<br>e b =<br>All Dimensions in mm<br>D<br>0.254<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. ## **SO-8** **==> picture [94 x 109] intentionally omitted <==** **----- Start of picture text -----**<br> X<br>Wag sy<br>C1<br>C2<br>Y<br>whe<br>**----- End of picture text -----**<br> |**Dimensions Value**|**Dimensions Value(in mm)**| |---|---| |**X**|0.60| |**Y**|1.55| |**C1**|5.4| |**C2**|1.27| 7 of 8 **www.diodes.com** ZXMP6A16DN8 Document number: DS33586 Rev. 5 - 2 June 2016 © Diodes Incorporated **ZXMP6A16DN8** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated **www.diodes.com** 8 of 8 **www.diodes.com** ZXMP6A16DN8 Document number: DS33586 Rev. 5 - 2 June 2016 © Diodes Incorporated
Updated at June 9, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →