ZXMN6A11DN8TA

## **ZXMN6A11DN8** ——— **60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID MAX**<br>**TA = +25°C**|
|60V|120mΩ @ VGS= 10V|3.2A|
||180mΩ @ VGS= 4.5V|2.6A|



## **Features and Benefits** 

- Low On-Resistance 

- Fast Switching Speed 

- Low Threshold 

- Low Gate Drive 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

## **Description and Applications** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

   - Case: SO-8 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminal Connections: See Diagram 

- DC-DC Converters 

- Power Management Functions 

- Motor Control 

- Terminals: Finish – Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.074 grams (Approximate) 

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S1 co To D 1 D1 D2<br>G1 co TO D 1<br>.<br>S 2 co _ D 2 G1 G2<br>2 G2 co To D 2<br>S1 S2<br>Top View  Top View<br>Pin Configuration  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|ZXMN6A11DN8TA|SO-8|2,500/Tape & Reel|



- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

ZXMN6A11D = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 19 = 2019) WW = Week (01 to 53) 

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ZXMN6A11DN8 Document number: DS33555  Rev. 5 - 2 

August 2019 © Diodes Incorporated 

**ZXMN6A11DN8** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (VGS= 10V)|Steady<br>State<br>t<10s|TA= +25°C (Note 6)<br>TA= +70°C (Note 6)<br>TA= +25°C(Note 5)|ID|3.2<br>2.6<br>2.5|A|
|Maximum BodyDiode Forward Current(Note 6)|||IS|3.1|A|
|Pulsed Drain Current(Note 7)|||IDM|13.7|A|
|Pulsed BodyDiode Forward Current((Note 7)|||ISM|13.7|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5 & Note 8)|PD|1.25|W|
|Thermal Resistance,Junction to Ambient(Note 5 & Note 8)|RθJA|100|°C/W|
|Total Power Dissipation(Note 5 & Note 9)|PD|1.8|W|
|Thermal Resistance,Junction to Ambient(Note 5 & Note 9)|RθJA|70|°C/W|
|Total Power Dissipation(Note 6 & Note 8)|PD|2.1|W|
|Thermal Resistance,Junction to Ambient(Note 6 & Note 8)|RθJA|60|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 10)|||||||
|Drain-Source Breakdown Voltage|BVDSS|60|||V|VGS= 0V,ID= 250µA|
|Zero Gate Voltage Drain Current|IDSS|||1|µA|VDS= 60V,VGS= 0V|
|Gate-Source Leakage|IGSS|||100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 10)|||||||
|Gate Threshold Voltage<br>~~i~~|VGS(TH)|1|||V|VDS= VGS,ID= 250µA|
|Static Drain-Source On-Resistance<br>~~i~~|RDS(ON)|||120|mΩ|VGS= 10V,ID= 2.5A|
|||||180||VGS= 4.5V,ID= 2A|
|Forward Transconductance<br>~~i~~|gfs||4.9||S|VDS= 15V,ID= 2.5A|
|Diode Forward Voltage<br>~~——~~|VSD||0.85|0.95<br>~~e~~|V<br>~~e~~|TJ= +25°C,VGS= 0V,IS= 2.8A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS**(Note 11)<br>~~——~~<br>~~ee~~|||||||
|Input Capacitance<br>~~——~~|Ciss||330|<br>~~e~~|pF<br>~~e~~<br>~~ee~~|VDS= 40V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~<br>~~eee~~|
|Output Capacitance<br>~~——~~|Coss||35.2|<br>~~e~~|||
|Reverse Transfer Capacitance<br>~~——~~<br>~~———~~|Crss<br>~~———~~||17.1<br>~~ee~~|<br>~~e~~<br>~~ee~~|||
|Total Gate Charge(VGS= 10V)<br>~~——~~<br>~~———~~|Qg<br>~~———~~||5.7<br>~~ee~~|<br>~~e~~<br>~~ee~~|nC<br>~~e~~<br>~~ee~~<br>~~ae~~|VDS= 15V, ID= 2.5A<br>~~ee~~<br>~~eee~~<br>~~ae~~|
|Total Gate Charge(VGS= 5V)<br>~~——~~<br>~~———~~|Qg<br>~~———~~||3<br>~~ee~~|<br>~~e~~<br>~~ee~~|||
|Gate-Source Charge<br>~~———~~|Qgs<br>~~———~~||1.25<br>~~ee~~|<br>~~ee~~|||
|Gate-Drain Charge<br>~~———~~<br>~~—_~~|Qgd<br>~~———~~||0.86<br>~~ee~~|<br>~~ee~~<br>~~ae~~|||
|Turn-On DelayTime<br>~~———~~<br>~~—_~~|tD(ON)<br>~~———~~||1.95<br>~~ee~~|<br>~~ee~~<br>~~ae~~|ns<br>~~ee~~<br>~~ae~~|VGS= 10V, VDD= 30V, Rg= 6Ω,<br>ID= 2.5A<br>~~eee~~<br>~~ae~~|
|Turn-On Rise Time<br>~~———~~<br>~~—_~~|tR<br>~~———~~||3.5<br>~~ee~~|<br>~~ee~~<br>~~ae~~|||
|Turn-Off DelayTime<br>~~—_~~|tD(OFF)||8.2|<br>~~ae~~|||
|Turn-Off Fall Time<br>~~—_~~|tF||4.6|<br>~~ae~~|||
|BodyDiode Reverse RecoveryTime<br>~~—_~~|tRR||21.5|<br>~~ae~~|ns<br>~~ae~~|TJ= +25°C,IS= 2.5A,di/dt = 100A/μs<br>~~ae~~|
|BodyDiode Reverse RecoveryCharge<br>~~—_~~|QRR||20.5|<br>~~ae~~|nC<br>~~ae~~|TJ= +25°C,IS= 2.5A,di/dt = 100A/µs<br>~~ae~~|



- Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 

   6. For a device surface mounted on FR4 PCB. 

   7. Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction temperature. 

   8. For a dual device with one active die. 

   9. For a device with two active dice running at equal power. 

   10. Short duration pulse test used to minimize self-heating effect. 

   11. Guaranteed by design. Not subject to product testing. 

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**ZXMN6A11DN8** 

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ID = 250µA<br>**----- End of picture text -----**<br>


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| tD(ON) tR j++ tD(OFF) tR<br>t(ON) t(ON)<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SO-8** 

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SO-8<br>E ee Dim  Min  Max  Typ<br>A  1.40  1.50  1.45<br>A1  0.10  0.20  0.15<br>1<br>b  0.30  0.50  0.40<br>c  0.15 0.25 0.20<br>D  4.85 4.95 4.90<br>E  5.90 6.10 6.00<br>b<br>E1 E1  3.80 3.90 3.85<br>h E0  3.85  3.95  3.90<br>Q e  --  --  1.27<br>7° h  --  --  0.35<br>c L   0.62  0.82  0.72<br>A 4°± 3° Q 0.60  0.70  0.65<br>G auge Plane All Dimensions in mm<br>S eating Plane<br>L<br>e A1 ou E0<br>D<br>ggested Pad Layout ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SO-8<br>X1<br>Dimensions Value (in mm)<br>C 1.27<br>Y1 X  0.802<br>X1  4.612<br>Y  1.505<br>OE Y1  6.50<br>Y<br>alae C X<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout ested Pad Layout yout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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ZXMN6A11DN8 Document number: DS33555  Rev. 5 - 2 

August 2019 © Diodes Incorporated 

**ZXMN6A11DN8** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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ZXMN6A11DN8 Document number: DS33555  Rev. 5 - 2 

August 2019 © Diodes Incorporated