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ZXMN3A04DN8TA
Dual MOSFET, N Channel, 30 V, 30 V, 8.5 A, 8.5 A, 0.02 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2.15W
- Power Dissipation P Channel: 2.15W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 8.5A
- Continuous Drain Current Id P Channel: 8.5A
- Drain Source On State Resistance N Channel: 0.02ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.901 € |
| Current stock | 200+ |
| Lead time | 30 days |
## **ZXMN3A04DN8** ## **DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET** ## **SUMMARY V(BR)DSS= 30V; RDS(ON)= 0.02 ; ID= 8.5A** ## **DESCRIPTION** This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. **==> picture [98 x 55] intentionally omitted <==** ## **FEATURES** **==> picture [20 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> SO8<br>**----- End of picture text -----**<br> - Low on-resistance - Fast switching speed - Low threshold - Low gate drive - Low profile SOIC package ## **APPLICATIONS** - DC - DC Converters - Power Management Functions - Disconnect switches - Motor control ## **ORDERING INFORMATION** |**DEVICE**|**REEL**|**TAPE**<br>**WIDTH**|**QUANTITY**<br>**PER REEL**| |---|---|---|---| |ZXMN3A04DN8TA|7’‘|12mm|500 units| |ZXMN3A04DN8TC|13’‘|12mm|2500 units| |**DEVICE MARKING**<br>ZXMN<br>3A04D|||| **==> picture [113 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> PINOUT<br>Top view<br>**----- End of picture text -----**<br> **ISSUE 2 - OCTOBER 2002** **1** ## **ZXMN3A04DN8** ## **ABSOLUTE MAXIMUM RATINGS.** |**ABSOLUTE MAXIMUM RATINGS.**|||| |---|---|---|---| |PARAMETER|SYMBOL|LIMIT|UNIT| |Drain-Source Voltage|VDSS|30|V| |Gate Source Voltage|VGS|�20|V| |Continuous Drain Current (VGS=10V; TA=25°C)(b)(d)<br>(VGS=10V; TA=70°C)(b)(d)<br>(VGS=10V; TA=25°C)(a)(d)|ID|8.5<br>6.8<br>6.5|A| |Pulsed Drain Current (c)|IDM|39|A| |Continuous Source Current (Body Diode) (b)|IS|3.6|A| |Pulsed Source Current (Body Diode)(c)|ISM|39|A| |Power Dissipation at TA=25°C (a)(d)<br>Linear Derating Factor|PD|1.25<br>10|W<br>mW/°C| |Power Dissipation at TA=25°C (a)(e)<br>Linear Derating Factor|PD|1.81<br>14.5|W<br>mW/°C| |Power Dissipation at TA=25°C (b)(d)<br>Linear Derating Factor|PD|2.15<br>17.2|W<br>mW/°C| |Operating and Storage Temperature Range|Tj:Tstg|-55 to +150|°C| ## **THERMAL RESISTANCE** |**THERMAL RESISTANCE**|||| |---|---|---|---| |**PARAMETER**|**SYMBOL**|**VALUE**|**UNIT**| |Junction to Ambient (a)(d)|RθJA|100|°C/W| |Junction to Ambient (b)(e)|RθJA|69|°C/W| |Junction to Ambient (b)(d)|RθJA|58|°C/W| Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t � 10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient Thermal Impedance Graph. (d) For a dual device with one active die. **ISSUE 2 - OCTOBER 2002** **2** ## **ZXMN3A04DN8** ## **CHARACTERISTICS** **ISSUE 2 - OCTOBER 2002** **3** ## **ZXMN3A04DN8** ## **ELECTRICAL CHARACTERISTICS** (at TA = 25°C unless otherwise stated). |**ELECTRICAL CHARACTERISTICS**(at|TA= 25°|C unle|ss oth|erwise|state|d).| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|**CONDITIONS.**| |**STATIC**||||||| |Drain-Source Breakdown Voltage|V(BR)DSS|30|||V|ID=250µA, VGS=0V| |Zero Gate Voltage Drain Current|IDSS|||0.5|µA|VDS=30V, VGS=0V| |Gate-Body Leakage|IGSS|||100|nA|VGS=±20V, VDS=0V| |Gate-Source Threshold Voltage|VGS(th)|1.0|||V|ID=250µA, VDS= VGS| |Static Drain-Source On-State Resistance<br>(1)|RDS(on)|||0.02<br>0.03|Ω<br>Ω|VGS=10V, ID=12.6A<br>VGS=4.5V, ID=10.6A| |Forward Transconductance (3)|gfs||22.1||S|VDS=15V,ID=12.6A| |**DYNAMIC** (3)||||||| |Input Capacitance|Ciss||1890||pF|VDS=15V, VGS=0V,<br>f=1MHz| |Output Capacitance|Coss||349||pF|| |Reverse Transfer Capacitance|Crss||218||pF|| |**SWITCHING**(2) (3)||||||| |Turn-On Delay Time|td(on)||5.2||ns|VDD =15V, ID=1A<br>RG=6.0Ω, VGS=10V| |Rise Time|tr||6.1||ns|| |Turn-Off Delay Time|td(off)||38.1||ns|| |Fall Time|tf||20.2||ns|| |Gate Charge|Qg||19.9||nC|VDS=15V,VGS=5V,<br>ID=6.5A| |Total Gate Charge|Qg||36.8||nC|VDS=15V,VGS=10V,<br>ID=6.5A| |Gate-Source Charge|Qgs||5.8||nC|| |Gate-Drain Charge|Qgd||7.1||nC|| |**SOURCE-DRAIN DIODE**||||||| |Diode Forward Voltage (1)|VSD||0.85|0.95|V|TJ=25°C, IS=6.8A,<br>VGS=0V| |Reverse Recovery Time (3)|trr||18.4||ns|TJ=25°C, IF=2.3A,<br>di/dt= 100A/µs| |Reverse Recovery Charge (3)|Qrr||11||nC|| NOTES (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. **ISSUE 2 - OCTOBER 2002** **4** ## **ZXMN3A04DN8** ## **TYPICAL CHARACTERISTICS** **ISSUE 2 - OCTOBER 2002** **5** ## **ZXMN3A04DN8** ## **TYPICAL CHARACTERISTICS** **ISSUE 2 - OCTOBER 2002** **6** ## **ZXMN3A04DN8** **==> picture [91 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> PACKAGE OUTLINE<br>**----- End of picture text -----**<br> **==> picture [204 x 185] intentionally omitted <==** **==> picture [174 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> CONTROLLING DIMENSIONS ARE IN INCHES<br>APPROX IN MILLIMETRES<br>**----- End of picture text -----**<br> **==> picture [111 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> PACKAGE DIMENSIONS<br>**----- End of picture text -----**<br> |**DIM**|**INCHES**|**INCHES**|**MILLIMETRES**|**MILLIMETRES**| |---|---|---|---|---| ||**MIN**|**MAX**|**MIN**|**MAX**| |A|0.053|0.069|1.35|1.75| |A1|0.004|0.010|0.10|0.25| |D|0.189|0.197|4.80|5.00| |H|0.228|0.244|5.80|6.20| |E|0.150|0.157|3.80|4.00| |L|0.016|0.050|0.40|1.27| |e|0.050 BSC||1.27 BSC|| |b|0.013|0.020|0.33|0.51| |c|0.008|0.010|0.19|0.25| |�|0�|8�|0�|8�| |h|0.010|0.020|0.25|0.50| © Zetex plc 2002 |© Zetex plc 2002|||| |---|---|---|---| |**Europe**||**Americas**|**Asia Pacific**| |Zetex plc|Zetex GmbH|Zetex Inc|Zetex (Asia) Ltd| |Fields New Road|Streitfeldstraße 19|700 Veterans Memorial Hwy|3701-04 Metroplaza, Tower 1| |Chadderton|D-81673 München|Hauppauge, NY11788|Hing Fong Road| |Oldham, OL9 8NP|||Kwai Fong| |United Kingdom|Germany|USA|Hong Kong| |Telephone (44) 161 622 4422|Telefon: (49) 89 45 49 49 0|Telephone: (631) 360 2222|Telephone: (852) 26100 611| |Fax: (44) 161 622 4420|Fax: (49) 89 45 49 49 49|Fax: (631) 360 8222|Fax: (852) 24250 494| |uk.sales@zetex.com|europe.sales@zetex.com|usa.sales@zetex.com|asia.sales@zetex.com| These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to **www.zetex.com** **ISSUE 2 - OCTOBER 2002** **7**
Updated at June 9, 2026
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