ZXMN2A04DN8TA

## **ZXMN2A04DN8** 

## **DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET** 

**SUMMARY V(BR)DSS= 20V; RDS(ON)= 0.025 ; ID= 7.7A** 

## **DESCRIPTION** 

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. 

**==> picture [98 x 55] intentionally omitted <==**

## **FEATURES** 

**==> picture [20 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
SO8<br>**----- End of picture text -----**<br>


- Low on-resistance 

- Fast switching speed 

- Low threshold 

- Low gate drive 

- Low profile SOIC package 

## **APPLICATIONS** 

- DC - DC converters 

- Power management functions 

- Disconnect switches 

- Motor control 

## **ORDERING INFORMATION** 

|**DEVICE**|**REEL**|**TAPE**<br>**WIDTH**|**QUANTITY**<br>**PER REEL**|
|---|---|---|---|
|ZXMN2A04DN8TA|7’‘|12mm|500 units|
|ZXMN2A04DN8TC|13’‘|12mm|2500 units|
|**DEVICE MARKING**<br>ZXMN<br>2A04D||||



## **PINOUT** 

**==> picture [113 x 60] intentionally omitted <==**

**==> picture [27 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
Top view<br>**----- End of picture text -----**<br>


**==> picture [83 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEMICONDUCTORS<br>**----- End of picture text -----**<br>


**ISSUE 1 - JULY 2004** 

**1** 

## **ZXMN2A04DN8** 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE MAXIMUM RATINGS**||||
|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**LIMIT**|**UNIT**|
|Drain-Source Voltage|VDSS|20|V|
|Gate Source Voltage|VGS|�12|V|
|Continuous Drain Current<br>(VGS=10V; TA=25°C) (b) (d)<br>(VGS=10V; TA=70°C) (b) (d)<br>(VGS=10V; TA=25°C) (a) (d)|ID|7.7<br>6.2<br>5.9|A<br>A<br>A|
|Pulsed Drain Current (c)|IDM|38|A|
|Continuous Source Current (Body Diode) (b)|IS|2.9|A|
|Pulsed Source Current (Body Diode) (c)|ISM|38|A|
|Power Dissipation at TA=25°C (a) (d)<br>Linear Derating Factor|PD|1.25<br>10|W<br>mW/°C|
|Power Dissipation at TA=25°C (a) (e)<br>Linear Derating Factor|PD|1.8<br>14|W<br>mW/°C|
|Power Dissipation at TA=25°C (b) (d)<br>Linear Derating Factor|PD|2.1<br>17|W<br>mW/°C|
|Operating and Storage Temperature Range|Tj:Tstg|-55 to +150|°C|



## **THERMAL RESISTANCE** 

|**THERMAL RESISTANCE**||||
|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**VALUE**|**UNIT**|
|Junction to Ambient (a) (d)|R�JA|100|°C/W|
|Junction to Ambient (b) (e)|R�JA|70|°C/W|
|Junction to Ambient (b) (d)|R�JA|60|°C/W|



## **NOTES:** 

(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. 

(b) For a dual device surface mounted on FR4 PCB measured at t � 10 sec. 

(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient Thermal Impedance Graph. 

(d) For a dual device with one active die. 

(e) For dual device with 2 active die running at equal power. 

**==> picture [83 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEMICONDUCTORS<br>**----- End of picture text -----**<br>


**ISSUE 1 - JULY 2004** 

**2** 

## **ZXMN2A04DN8** 

## **CHARACTERISTICS** 

**==> picture [83 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEMICONDUCTORS<br>**----- End of picture text -----**<br>


**ISSUE 1 - JULY 2004** 

**3** 

## **ZXMN2A04DN8** 

## **ELECTRICAL CHARACTERISTICS** (at TA = 25°C unless otherwise stated) 

|**PARAMETER**|**SYMBOL**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|**CONDITIONS**|
|---|---|---|---|---|---|---|
|**STATIC**|||||||
|Drain-Source Breakdown Voltage|V(BR)DSS|20|||V|ID=250�A, VGS=0V|
|Zero Gate Voltage Drain Current|IDSS|||0.5|�A|VDS=20V, VGS=0V|
|Gate-Body Leakage|IGSS|||100|nA|VGS=�12V, VDS=0V|
|Gate-Source Threshold Voltage|VGS(th)|0.7|||V|ID=250�A, VDS = VGS|
|Static Drain-Source On-State<br>Resistance (1)|RDS(on)|||0.025<br>0.035|Ω<br>�|VGS=4.5V, ID=5.9A<br>VGS=2.5V, ID=5A|
|Forward Transconductance (3)|gfs||40||S|VDS=10V,ID=5.9A|
|**DYNAMIC** (3)|||||||
|Input Capacitance|Ciss||1880||pF|VDS=10V, VGS=0V,<br>f=1MHz|
|Output Capacitance|Coss||506||pF||
|Reverse Transfer Capacitance|Crss||386||pF||
|**SWITCHING**(2) (3)|||||||
|Turn-On Delay Time|td(on)||7.9||ns|VDD =10V, ID=1A<br>RG≅6�, VGS=5V|
|Rise Time|tr||14.8||ns||
|Turn-Off Delay Time|td(off)||50.5||ns||
|Fall Time|tf||30.6||ns||
|Gate Charge|Qg||22.1||nC|VDS=15V,VGS=5V,<br>ID=3.5A|
|Total Gate Charge|Qg||40.5||nC|VDS=10V,VGS=4.5V,<br>ID=5.9A|
|Gate-Source Charge|Qgs||5.6||nC||
|Gate-Drain Charge|Qgd||8.0||nC||
|**SOURCE-DRAIN DIODE**|||||||
|Diode Forward Voltage (1)|VSD||0.85|0.95|V|TJ=25°C, IS=5.1A,<br>VGS=0V|
|Reverse Recovery Time (3)|trr||18.0||ns|TJ=25°C, IF=1.9A,<br>di/dt= 100A/µs|
|Reverse Recovery Charge (3)|Qrr||8.9||nC||



## **NOTES:** 

(1) Measured under pulsed conditions. Width = 300 � s. Duty cycle � 2% . 

(2) Switching characteristics are independent of operating junction temperature. 

(3) For design aid only, not subject to production testing. 

**==> picture [83 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEMICONDUCTORS<br>**----- End of picture text -----**<br>


**ISSUE 1 - JULY 2004** 

**4** 

## **ZXMN2A04DN8** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [83 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEMICONDUCTORS<br>**----- End of picture text -----**<br>


**ISSUE 1 - JULY 2004** 

**5** 

## **ZXMN2A04DN8** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [83 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEMICONDUCTORS<br>**----- End of picture text -----**<br>


**ISSUE 1 - JULY 2004** 

**6** 

## **ZXMN2A04DN8** 

**==> picture [204 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
PACKAGE OUTLINE<br>�<br>D<br>Pin 1<br>c<br>Seating Plane<br>b e<br>CONTROLLING DIMENSIONS ARE IN INCHES<br>APPROX IN MILLIMETRES<br>E H<br>L<br>A<br>A1<br>**----- End of picture text -----**<br>


## **PACKAGE DIMENSIONS** 

|**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|---|---|
||**MIN**|**MAX**|**MIN**|**MAX**|
|A|0.053|0.069|1.35|1.75|
|A1|0.004|0.010|0.10|0.25|
|D|0.189|0.197|4.80|5.00|
|H|0.228|0.244|5.80|6.20|
|E|0.150|0.157|3.80|4.00|
|L|0.016<br>0.050||0.40<br>1.27||
|e|0.050 BSC||1.27 BSC||
|b|0.013|0.020|0.33|0.51|
|c|0.008|0.010|0.19|0.25|
|�|0�|8�|0�|8�|
|h|0.010|0.020|0.25|0.50|



## © Zetex Semiconductors plc 2004 

|**Europe**<br>Zetex GmbH<br>Streitfeldstraße 19<br>D-81673 München<br>Germany<br>Telefon: (49) 89 45 49 49 0<br>Fax: (49) 89 45 49 49 49<br>europe.sales@zetex.com|**Americas**<br>Zetex Inc<br>700 Veterans Memorial Hwy<br>Hauppauge, NY 11788<br>USA<br>Telephone: (1) 631 360 2222<br>Fax: (1) 631 360 8222<br>usa.sales@zetex.com|**Asia Pacific**<br>Zetex (Asia) Ltd<br>3701-04 Metroplaza Tower 1<br>Hing Fong Road, Kwai Fong<br>Hong Kong<br>Telephone: (852) 26100 611<br>Fax: (852) 24250 494<br>asia.sales@zetex.com|**Corporate Headquarters**<br>Zetex plc<br>Lansdowne Road, Chadderton<br>Oldham, OL9 9TY<br>United Kingdom<br>Telephone (44) 161 622 4444<br>Fax: (44) 161 622 4446<br>hq@zetex.com||
|---|---|---|---|---|



These offices are supported by agents and distributors in major countries world-wide. 

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com 

**ISSUE 1 - JULY 2004** 

**==> picture [83 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEMICONDUCTORS<br>**----- End of picture text -----**<br>


**7**