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ZXMHC3F381N8TC
Dual MOSFET, H-Bridge, Complementary N and P Channel, 30 V, 30 V, 3.98 A, 3.98 A, 0.033 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.98A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 870mW
- Power Dissipation P Channel: 870mW
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 3.98A
- Continuous Drain Current Id P Channel: 3.98A
- Drain Source On State Resistance N Channel: 0.033ohm
- Drain Source On State Resistance P Channel: 0.033ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.458 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**A Product Line of Diodes Incorporated** ## **ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge** ## **Summary** |**Device**|**V(BR)DSS**|**QG**|**RDS(on)**| |---|---|---|---| |N-CH|30V|9.0nC|33mΩ @ VGS= 10V| ||||60mΩ @ VGS= 4.5V| |P-CH|-30V|12.7nC|55mΩ @ VGS= -10V| ||||80mΩ @ VGS= -4.5V| ## **Description** This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. ## **Features** - 2 x N + 2 x P channels in a SOIC package - Low voltage (VGS = 4.5 V) gate drive ## **Applications** - DC Motor control - DC-AC Inverters **==> picture [209 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> P1S/P2S<br>P1G P2G<br>P1D/N1D P2D/N2D<br>N1G N2G<br>N1S/N2S<br>**----- End of picture text -----**<br> ## **Ordering information** |**Device**|**Reel size**<br>**(inches)**|**Tape width**<br>**(mm)**|**Quantity**<br>**per reel**| |---|---|---|---| |ZXMHC3F381N8TC|13|12|2,500| ## **Device marking** ZXMHC 3F381 **© Diodes Incorporated** **www.diodes.com** **Issue 1.0 - March 2009 1** **ZXMHC3F381N8** ## **Absolute maximum ratings** |**Absolute maximum ratings**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**N-**<br>**channel **|**P-**<br>**channel **|**Unit**| |Drain-Source voltage|VDSS|30|-30|V| |Gate-Source voltage|VGS|±20|±20|V| |Continuous Drain current @ VGS= 10V; TA=25°C(b)<br>@ VGS= 10V; TA=70°C(b)<br>@ VGS= 10V; TA=25°C(a)<br>@ VGS= 10V; TL=25°C(f)|ID|4.98<br>3.98<br>3.98<br>4.17|-4.13<br>-3.31<br>-3.36<br>-3.51|A| |Pulsed Drain current @ VGS= 10V; TA=25°C(c)|IDM|22.9|-19.6|A| |Continuous Source current (Body diode) at TA=25°C(b)|IS|2.0|-2.0|A| |Pulsed Source current (Body diode) at TA=25°C(c)|ISM|22.9|-19.6|A| |Power dissipation at TA=25°C(a)<br>Linear derating factor|PD|0.87<br>6.94||W<br>mW/°C| |Power dissipation at TA=25°C(b)<br>Linear derating factor|PD|1.35<br>10.9||W<br>mW/°C| |Power dissipation at TL=25°C(f)<br>Linear derating factor|PD|0.95<br>7.63|0.98<br>7.81|W<br>mW/°C| |Operating and storage temperature range|Tj, Tstg|-55 to 150||°C| ## **Thermal resistance** |**Thermal resistance**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Value**||**Unit**| |Junction to ambient(a)|RθJA|144||°C/W| |Junction to ambient(b)|RθJA|92||°C/W| |Junction to ambient(d)|RθJA|106||°C/W| |Junction to ambient(e)|RθJA|254||°C/W| |Junction to lead(f)|RθJL|131|128|°C/W| ## **NOTES:** (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. (b) Same as note (a), except the device is measured at t ≤ 10 sec. (c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. (d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. (e) For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when operating in a steady-state condition with one active die. (f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition with one active die. **Issue 1.0 - March 2009 2** **www.diodes.com** **© Diodes Incorporated** **ZXMHC3F381N8** ## **Thermal characteristics** **==> picture [399 x 152] intentionally omitted <==** **----- Start of picture text -----**<br> R R<br>DS(ON) DS(ON)<br>10 Limited 10 Limited<br>1 DC 1 DC<br>1s 1s<br>100m 100ms 10ms 100m 100ms 10ms<br>Note (a) 1ms Note (a) 1ms<br>100us 100us<br>10m Single Pulse, Tamb=25°C 10m Single Pulse, Tamb=25°C<br>0.1 1 10 0.1 1 10<br>VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V)<br>N-channel Safe Operating Area P-channel Safe Operating Area<br> Drain Current (A)ID Drain Current (A)-ID<br>**----- End of picture text -----**<br> **==> picture [202 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>One Active Die<br>120 25 x 25mm 1oz<br>100<br>80 D=0.5<br>60<br>40 D=0.2 Single Pulse<br>D=0.05<br>20<br>D=0.1<br>0<br>100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br> ## **Transient Thermal Impedance** **==> picture [191 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>Any one<br>active die<br>0.5<br>0.0<br>0 25 50 75 100 125 150<br> Temperature (°C)<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br> **==> picture [74 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Derating Curve<br>**----- End of picture text -----**<br> **==> picture [197 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> One Active Die<br>100<br>Single Pulse<br>T amb =25°C<br>10<br>1<br>100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Maximum Power (W)<br>**----- End of picture text -----**<br> **Pulse Power Dissipation** **Issue 1.0 - March 2009 3 © Diodes Incorporated** **www.diodes.com** **ZXMHC3F381N8** ## **N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)** |**Parameter**|**Symbol**|**Min.**|**Typ. **|**Max.**|**Unit**|**Conditions**| |---|---|---|---|---|---|---| |**Static**||||||| |Drain-Source breakdown<br>voltage|V(BR)DSS|30|||V|ID = 250μA, VGS= 0V| |Zero Gate voltage Drain<br>current|IDSS|||0.5|µA|VDS= 30V, VGS= 0V| |Gate-Bodyleakage|IGSS|||±100|nA|VGS=±20V,VDS= 0V| |Gate-Source threshold<br>voltage|VGS(th)|1.0||3.0|V|ID= 250μA, VDS= VGS| |Static Drain-Source<br>on-state resistance(a)|RDS(on)|||0.033<br>0.060|Ω|VGS= 10V, ID= 5A<br>VGS= 4.5V, ID= 4A| |Forward<br>Transconductance(a) (c)|gfs||11.8||S|VDS= 15V, ID= 5A| |**Dynamic**||||||| |**Capacitance **(c)||||||| |Input capacitance|Ciss||430||pF|VDS= 15V, VGS= 0V<br>f= 1MHz| |Output capacitance|Coss||101||pF|| |Reverse transfer<br>capacitance|Crss||56||pF|| |**Switching **(b) (c)||||||| |Turn-on-delaytime|td(on)||2.5||ns|VDD= 15V, VGS= 10V<br>ID= 1A<br>RG ≅6Ω,| |Rise time|tr||3.3||ns|| |Turn-off delaytime|td(off)||11.5||ns|| |Fall time|tf||6.3||ns|| |**Gate charge **(c)||||||| |Total Gate charge|Qg||9.0||nC|VDS=15V, VGS= 10V<br>ID= 5A| |Gate-Source charge|Qgs||1.7||nC|| |Gate-Drain charge|Qgd||2.0||nC|| |**Source–Drain diode**||||||| |Diode forward voltage(a)|VSD||0.82|1.2|V|IS= 1.7A, VGS= 0V| |Reverse recoverytime(c)|trr||12||ns|IS= 2.1A, di/dt= 100A/μs| |Reverse recoverycharge(c)|Qrr||4.9||nC|| ## **NOTES:** (a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing **Issue 1.0 - March 2009 4** **www.diodes.com** **© Diodes Incorporated** **ZXMHC3F381N8** ## **N-channel typical characteristics** **==> picture [400 x 473] intentionally omitted <==** **----- Start of picture text -----**<br> 10V 4.5V VGS T = 150°C 10V 4.5V 4V V GS<br>10 4V 10<br>3.5V<br>3.5V<br>3V<br>1 1<br>2.5V<br>3V<br>0.1 0.1 2V<br>T = 25°C<br>2.5V<br>0.01 0.01<br>0.1 1 10 0.1 1 10<br>VDS Drain-Source Voltage (V) VDS Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>10 VDS = 10V 1.6 V GS = 10V<br>1.4 I D = 5A R DS(on)<br>1 T = 150°C 1.2<br>1.0<br>0.1 0.8 V<br>T = 25°C 0.6 V GS = V DS GS(th)<br>I D = 250uA<br>0.01 0.4<br>2 3 4 -50 0 50 100 150<br>VGS Gate-Source Voltage (V) Tj Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>1000<br>10<br>2.5V<br>T = 25°C VGS<br>100<br>T = 150°C<br>1<br>3V<br>10<br>3.5V<br>0.1 T = 25°C<br>1<br>4V<br>4.5V 0.01<br>0.1<br>10V<br>0.01 1E-3<br>0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0<br>ID Drain Current (A) VSD Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br> Drain Current (A) Drain Current (A)<br>ID ID<br>GS(th)<br> and V<br>DS(on)<br> Drain Current (A)<br>ID<br>Normalised R<br>)Ω<br> Reverse Drain Current (A)<br> Drain-Source On-Resistance ( ISD<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Issue 1.0 - March 2009 5 © Diodes Incorporated** **www.diodes.com** **ZXMHC3F381N8** ## **N-channel typical characteristics –continued** **==> picture [190 x 151] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>V GS = 0V<br>500 f = 1MHz<br>400<br>300 CISS C OSS<br>200 CRSS<br>100<br>0<br>1 10<br>VDS - Drain - Source Voltage (V)<br>Capacitance v Drain-Source Voltage<br>C Capacitance (pF)<br>**----- End of picture text -----**<br> **==> picture [192 x 151] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 I D = 5A<br>8<br>7<br>6<br>5<br>4<br>3<br>2 VDS = 15V<br>1<br>0<br>0 1 2 3 4 5 6 7 8 9<br>Q - Charge (nC)<br>Gate-Source Voltage v Gate Charge<br> Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> ## **Test circuits** **==> picture [154 x 115] intentionally omitted <==** **----- Start of picture text -----**<br> QG<br>VG QGS QGD<br>Charge<br>**----- End of picture text -----**<br> **==> picture [136 x 124] intentionally omitted <==** **----- Start of picture text -----**<br> Current<br>regulator<br>12V 50k Same as<br>D.U.T<br>VDS<br>IG<br>D.U.T<br>ID<br>VGS<br>**----- End of picture text -----**<br> **Basic gate charge waveform** **Gate charge test circuit** **==> picture [200 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tr<br>t(on) t(on)<br>**----- End of picture text -----**<br> **==> picture [132 x 84] intentionally omitted <==** **----- Start of picture text -----**<br> RD<br>VGS VDS<br>RG VDD<br>**----- End of picture text -----**<br> **Switching time waveforms** **Switching time test circuit** **Issue 1.0 - March 2009 6 © Diodes Incorporated** **www.diodes.com** **ZXMHC3F381N8** ## **P-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)** |**Parameter**|**Symbol**|**Min.**|**Typ. **|**Max.**|**Unit**|**Conditions**| |---|---|---|---|---|---|---| |**Static**||||||| |Drain-Source breakdown<br>voltage|V(BR)DSS|-30|||V|ID = -250μA, VGS= 0V| |Zero Gate voltage Drain<br>current|IDSS|||-0.5|µA|VDS= -30V, VGS= 0V| |Gate-Bodyleakage|IGSS|||±100|nA|VGS=±20V,VDS= 0V| |Gate-Source threshold<br>voltage|VGS(th)|-1.0||-3.0|V|ID= -250μA, VDS= VGS| |Static Drain-Source<br>on-state resistance(a)|RDS(on)|||0.055<br>0.080|Ω|VGS= -10V, ID= -5A<br>VGS= -4.5V, ID= -4A| |Forward<br>Transconductance(a) (c)|gfs||14||S|VDS= -15V, ID= -5A| |**Dynamic**||||||| |**Capacitance **(c)||||||| |Input capacitance|Ciss||670||pF|VDS= -15V, VGS= 0V<br>f= 1MHz| |Output capacitance|Coss||126||pF|| |Reverse transfer<br>capacitance|Crss||70||pF|| |**Switching **(b) (c)||||||| |Turn-on-delaytime|td(on)||1.9||ns|VDD= -15V, VGS= -10V<br>ID= -1A<br>RG ≅6Ω| |Rise time|tr||3.0||ns|| |Turn-off delaytime|td(off)||30||ns|| |Fall time|tf||21||ns|| |**Gate charge **(c)||||||| |Total Gate charge|Qg||12.7||nC|VDS= -15V, VGS= -10V<br>ID= -5A| |Gate-Source charge|Qgs||2.0||nC|| |Gate-Drain charge|Qgd||2.4||nC|| |**Source–Drain diode**||||||| |Diode forward voltage(a)|VSD||-0.82|-1.2|V|IS= -1.7A, VGS= 0V| |Reverse recoverytime(c)|trr||16.5||ns|IS= -2.1A, di/dt= 100A/μs| |Reverse recoverycharge(c)|Qrr||11.5||nC|| ## **NOTES:** (a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing **Issue 1.0 - March 2009 7** **www.diodes.com** **© Diodes Incorporated** **ZXMHC3F381N8** ## **P-channel typical characteristics** **==> picture [390 x 463] intentionally omitted <==** **----- Start of picture text -----**<br> T = 25°C 10V 4.5V 4V T = 150°C 10V 4V 3.5V<br>10 3.5V 10 3V<br>2.5V<br>3V<br>1<br>2V<br>2.5V 1<br>0.1<br>VGS V GS<br>0.01 0.1<br>0.1 1 10 0.1 1 10<br>-VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1.6<br>10 V DS = 10V 1.4 V I D GS = 5A = 10V<br>1.2 R DS(on)<br>T = 150°C<br>1.0<br>1 T = 25°C<br>0.8<br>V GS = V DS<br>0.6 I D = 250uA V GS(th)<br>0.1 0.4<br>2.0 2.5 3.0 3.5 -50 0 50 100 150<br>-VGS Gate-Source Voltage (V) Tj Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>2.5V T = 25°C VGS 10<br>10 T = 150°C<br>1<br>3V<br>3.5V<br>1<br>4V 0.1 T = 25°C<br>0.1 4.5V 0.01<br>10V<br>Vgs = 0V<br>0.01 1E-3<br>0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0<br>-ID Drain Current (A) -VSD Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br> Drain Current (A) Drain Current (A)<br>D D<br>-I -I<br>GS(th)<br> and V<br>DS(on)<br> Drain Current (A)<br>D<br>-I<br>Normalised R<br>)Ω<br> Reverse Drain Current (A)<br>SD<br> Drain-Source On-Resistance ( -I<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Issue 1.0 - March 2009 8** **www.diodes.com** **© Diodes Incorporated** **ZXMHC3F381N8** ## **P-channel typical characteristics –continued** **==> picture [388 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 10<br>V GS = 0V 9 I D = 5A<br>800 f = 1MHz 8<br>7<br>600 C ISS COSS 65<br>400 C RSS 4<br>3<br>200 2<br>1 V DS = 15V<br>0 0<br>1 10 0 5 10 15<br>-VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C Capacitance (pF) Gate-Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br> **Gate-Source Voltage v Gate Charge** ## **Test circuits** **==> picture [154 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> QG<br>VG QGS QGD<br>**----- End of picture text -----**<br> Charge **==> picture [137 x 124] intentionally omitted <==** **----- Start of picture text -----**<br> Current<br>regulator<br>12V 0.2�F 50k Same as<br>D.U.T<br>VDS<br>IG<br>D.U.T<br>ID<br>VGS<br>**----- End of picture text -----**<br> **Basic gate charge waveform** **Gate charge test circuit** **==> picture [201 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>90%<br>10%<br>VGS<br>tr td(off) tr td(on)<br>t(on) t(on)<br>**----- End of picture text -----**<br> **==> picture [149 x 84] intentionally omitted <==** **----- Start of picture text -----**<br> RD<br>VGS VDS<br>RG VDD<br>Pulse width � 1�S<br>Duty factor 0.1%<br>**----- End of picture text -----**<br> **Switching time waveforms** **Switching time test circuit** **Issue 1.0 - March 2009 9 © Diodes Incorporated** **www.diodes.com** **ZXMHC3F381N8** ## **Packaging details - SO8** |**DIM**<br>~~en~~<br>~~a~~|**Inches**<br>~~en~~<br>~~A~~|**Inches**<br>~~en~~<br>~~A~~|**Millimeters**<br>~~en~~<br>~~ee~~|**Millimeters**<br>~~en~~<br>~~ee~~|**DIM**<br>~~en~~|**Inches**<br>~~en~~<br>~~eee~~|**Inches**<br>~~en~~<br>~~eee~~|**Millimeters**<br>~~en~~<br>~~eee~~|**Millimeters**<br>~~en~~<br>~~eee~~| |---|---|---|---|---|---|---|---|---|---| ||**Min.**<br>~~en~~<br>~~A~~|**Max.**<br>~~en~~|**Min.**<br>~~en~~<br>~~ee~~|**Max.**<br>~~en~~<br>~~ee~~||**Min.**<br>~~en~~|**Max.**<br>~~en~~<br>~~eee~~|**Min.**<br>~~en~~<br>~~eee~~|**Max.**<br>~~en~~<br>~~eee~~| |A<br>~~a~~|0.053<br>~~A~~|0.069|1.35<br>~~ee~~|1.75<br>~~ee~~|e|0.050 BSC<br>~~eee~~||1.27 BSC<br>~~eee~~|| |A1<br>~~a~~|0.004|0.010|0.10|0.25|b|0.013|0.020|0.33|0.51| |D<br>~~a~~|0.189|0.197|4.80|5.00|c|0.008|0.010|0.19|0.25| |H<br>~~a~~|0.228|0.244|5.80|6.20|θ|0°|8°|0°|8°| |E<br>~~a~~|0.150|0.157|3.80|4.00|-|-|-|-|-| |L<br>~~a~~|0.016|0.050|0.40|1.27|-|-|-|-|-| **Note:** Controlling dimensions are in inches. Approximate dimensions are provided in millimeters **Issue 1.0 - March 2009 10 © Diodes Incorporated** **www.diodes.com** **ZXMHC3F381N8** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated **www.diodes.com** **Issue 1.0 - March 2009 11** **www.diodes.com** **© Diodes Incorporated**
Updated at June 9, 2026
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