ZXMHC10A07T8TA

**ZXMHC10A07T8 Green** ~~©,~~ CT **COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|||||
|**Device**|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|N-Channel|100V|0.7Ω@VGS= 10V|1.4A|
|||0.9Ω@VGS= 6V|1.1A|
|P-Channel|-100V|1.0Ω@VGS= -10V|-1.3A|
|||1.45Ω@VGS= -6V|-0.9A|



## **Features** 

- 2 x N + 2 x P Channels in a SOIC Package 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. 

## **Applications** 

- DC Motor Control 

- DC-AC Inverters 

## **Mechanical Data** 

- Case: SM-8 (8 LEAD SOT223) 

- Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

- Weight: 0.117 grams (Approximate) 

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SM-8<br>PIN1<br>G3 G4<br>)<br>S2 S3 D3 D4 Di,D2 |<br>G2 S1 S4<br>G1 D1 D2<br>~ S2 S3<br>Top View<br>Top View  Pin Configuration  Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Part Number**|**Reel Size**|**Tape Width**|**Quantity per Reel**|
|---|---|---|---|
|ZXMHC10A07T8TA|7’’|12mm|1,000 units|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

SM-8 

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ZXMHC<br>10A07<br>YWW<br>**----- End of picture text -----**<br>


ZXMHC10A07 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 

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**ZXMHC10A07T8** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||||
|---|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**N-channel**|**P-channel**|**Units**|
|Drain-Source Voltage|||VDSS|100|-100|V|
|Gate-Source Voltage|||VGSS|±20|±20|V|
|Continuous Drain Current, VGS= 10V (Note 8)|Steady<br>State|TA= +25°C (Note 6)<br>TA= +70°C (Note 6)<br>TA= +25°C(Note 5)|ID|1.1<br>0.9<br>1.0|-0.9<br>-0.8<br>-0.8|A|
|Maximum BodyDiode Forward Current (Note 6)|||IS|2.3|-2.2|A|
|Pulsed Drain Current (Note 7)|||IDM|5.2|-4.5|A|
|Pulsed Source Current (Note 7)|||ISM|5.2|-4.5|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**<br>~~QQ~~<br>~~es~~||**Symbol**<br>~~QQ~~<br>~~es~~|**Value**<br>~~QQ~~<br>~~ee~~|**Units**<br>~~QQ~~|
|Total Power Dissipation (Note 8)<br>Linear DeratingFactor<br>~~ee~~|TA= +25°C (Note 5)<br>~~ee~~<br>~~es~~|PD<br>~~ee~~<br>~~es~~|1.3<br>10.4<br>~~ee~~<br>~~ee~~|W<br>mW/°C<br>~~ee~~|
|Total Power Dissipation (Note 8)<br>Linear DeratingFactor<br>~~it~~|TA= +25°C (Note 6)<br>~~es ~~<br>~~it~~<br>~~SF~~|PD<br> ~~es ~~<br>~~it~~|1.3<br> ~~ee~~<br>~~it~~|W<br>mW/°C<br>~~it~~|
|Thermal Resistance, Junction to Ambient (Note 8)<br>~~EE~~|SteadyState(Note 5)<br>~~EE~~<br>~~SF~~|RθJA<br>~~EE~~|94.5<br>~~EE~~|°C/W<br>~~EE~~|
||SteadyState(Note 6)<br>~~EE~~<br>~~SF~~||73.3<br>~~EE~~|°C/W<br>~~EE~~|
|Operatingand Storage Temperature Range<br>~~SF~~<br>~~GG~~||TJ, TSTG<br>~~GG~~|-55 to +150<br>~~GG~~|°C<br>~~GG~~|



- Notes: 5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with the heat sink split into two equal areas one for each drain connection. 

   6. For a device surface mounted on FR4 PCB measured at t 10 seconds. 

7. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02, pulse width 300μs - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 

8. For device with one active die. 

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## **Electrical Characteristics N-CHANNEL** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics N-CHANNEL**|**Electrical Characteristics N-CHANNEL N-CHANNEL**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|
||**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ **<br>**Max**<br>**Unit**<br>**Test Condition**|
||**OFF CHARACTERISTICS(Note 10) **|
||Drain-Source Breakdown Voltage<br>BVDSS<br>100<br>—<br>—<br>V<br>VGS= 0V,ID= 250μA<br>Zero Gate Voltage Drain Current<br>IDSS<br>—<br>—<br>1.0<br>μA<br>VDS= 100V,VGS= 0V<br>Gate-Source Leakage<br>IGSS<br>—<br>—<br>100<br>nA<br>VGS= ±20V,VDS= 0V<br>~~ee~~|
||**ON CHARACTERISTICS(Note 10) **<br>Gate Threshold Voltage<br>VGS(TH)<br>2.0<br>—<br>4.0<br>V<br>VDS= VGS,ID= 250μA<br>Static Drain-Source On-Resistance (Note 9)<br>RDS(ON)<br>—<br>—<br>0.7<br>Ω<br>VGS= 10V,ID= 1.5A<br>—<br>—<br>0.9<br>VGS= 6.0V,ID= 1.0A<br>Forward Transfer Admittance(Notes 9 & 11)<br>gfs<br>—<br>1.6<br>—<br>S<br>VDS= 15V,ID= 1.0A<br>Diode Forward Voltage(Note 9)<br>VSD<br>—<br>—<br>0.95<br>V<br>VGS= 0V,IS= 1.5A<br>**DYNAMIC CHARACTERISTICS(Note 11)**<br>Input Capacitance<br>Ciss<br>—<br>138<br>—<br>pF<br>VDS= 60V, VGS= 0V,<br>f = 1MHz<br>Output Capacitance<br>Coss<br>—<br>12<br>—<br>Reverse Transfer Capacitance<br>Crss<br>—<br>6<br>—<br>Total Gate Charge<br>Qg<br>—<br>2.9<br>—<br>nC<br>VDS= 50V, ID= 1.0A, VGS=<br>10V<br>Gate-Source Charge<br>Qgs<br>—<br>0.7<br>—<br>Gate-Drain Charge<br>Qgd<br>—<br>1.0<br>—<br>Turn-On DelayTime<br>tD(ON)<br>—<br>1.8<br>—<br>ns<br>VDD= 50V, VGS= 10V,<br>ID= 1.0A,  RG= 6.0Ω<br>Turn-On Rise Time<br>tR<br>—<br>1.5<br>—<br>Turn-Off DelayTime<br>tD(OFF)<br>—<br>4.1<br>—<br>Turn-Off Fall Time<br>tF<br>—<br>2.1<br>—<br>Reverse RecoveryTime<br>tRR<br>—<br>27<br>—<br>ns<br>IS= 1.8A, di/dt = 100A/μs<br>Reverse RecoveryCharge<br>Qrr<br>—<br>12<br>—<br>nC<br>~~a~~<br>~~GG~~<br>~~COG (~~<br>~~ee~~<br>~~GG~~<br>~~CO GN(~~<br>~~Ge~~<br>~~pO~~<br>~~eee~~<br>~~ee~~<br>~~ee~~|
|**Electrical Characteristics P-CHANNEL**(@TA= +25°C, unless otherwise specified.)||
|||
||**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ **<br>**Max**<br>**Unit**<br>**Test Condition**|
||**OFF CHARACTERISTICS(Note 10) **|
||Drain-Source Breakdown Voltage<br>BVDSS<br>-100<br>—<br>—<br>V<br>VGS= 0V,ID= -250μA|
||Zero Gate Voltage Drain Current<br>IDSS<br>—<br>—<br>-1.0<br>μA<br>VDS= -100V,VGS= 0V|
||Gate-Source Leakage<br>IGSS<br>—<br>—<br>100<br>nA<br>VGS= ±20V,VDS= 0V<br>**ON CHARACTERISTICS(Note 10) **<br>~~DG~~<br>~~OD~~|
||Gate Threshold Voltage<br>VGS(TH)<br>-2.0<br>—<br>-4.0<br>V<br>VDS= VGS,ID= -250μA|
||Static Drain-Source On-Resistance (Note 9)<br>RDS(ON)<br>—<br>—<br>1.0<br>Ω<br>VGS= -10V,ID= -0.6A<br>—<br>—<br>1.45<br>VGS= -6.0V,ID= -0.5A<br>~~ee~~|
||Forward Transfer Admittance(Notes 9 & 11)<br>gfs<br>—<br>1.2<br>—<br>S<br>VDS= -15V,ID= -0.6A<br>Diode Forward Voltage(Note 9)<br>VSD<br>—<br>-0.85<br>-0.95<br>V<br>VGS= 0V,IS= -0.75A<br>~~a~~|
||**DYNAMIC CHARACTERISTICS(Note 11)**|
||Input Capacitance<br>Ciss<br>—<br>141<br>—<br>pF<br>VDS= -50V, VGS= 0V,<br>f = 1MHz<br>Output Capacitance<br>Coss<br>—<br>13.1<br>—<br>pF<br>Reverse Transfer Capacitance<br>Crss<br>—<br>10.8<br>—<br>pF<br>~~PO~~|
||Gate Charge(VGS= -5.0V)<br>Qg<br>—<br>1.6<br>—<br>nC|
||VDS= -50V, ID= -0.6A<br>Total Gate Charge(VGS= -10V)<br>Qg<br>—<br>3.5<br>—<br>nC<br>Gate-Source Charge<br>Qgs<br>—<br>0.6<br>—<br>nC<br>~~GC~~<br>~~PO~~|
||Gate-Drain Charge<br>Qgd<br>—<br>1.6<br>—<br>nC|
||Turn-On DelayTime<br>tD(ON)<br>—<br>1.6<br>—<br>ns|
||VDD= -50V, VGS= -10V,<br>Turn-On Rise Time<br>tR<br>—<br>2.1<br>—<br>ns|
||RG= 6.0Ω, ID= -1.0A<br>Turn-Off DelayTime<br>tD(OFF)<br>—<br>5.9<br>—<br>ns<br>~~PO~~|
||Turn-Off Fall Time<br>tF<br>—<br>3.3<br>—<br>ns|
||Reverse RecoveryTime<br>tRR<br>—<br>29<br>—<br>ns<br>IS= -0.9A, di/dt = 100A/μs<br>Reverse RecoveryCharge<br>Qrr<br>—<br>31<br>—<br>nC|



Notes: 9. Measured under pulsed conditions. Width≤300μs. Duty cycle ≤ 2%. 

10. Short duration pulse test used to minimize self-heating effect. 

11. Guaranteed by design. Not subject to product testing. 

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**ZXMHC10A07T8** 

## **Typical Characteristics** 

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## **Typical Characteristics (N-Channel)** 

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## **Typical Characteristics (N-Channel)** (Cont.) 

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## **Typical Characteristics (P-Channel)** 

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## **Typical Characteristics (P-Channel)** (Cont.) 

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## **Package Outline Dimensions** 

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Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.<br>A1<br>A<br>bee Seating Plane<br>SM-8<br>Dim  Min  Max  Typ<br>| D : oe A  -- 1.70  1.60<br>A1  0.02  0.10  0.04<br>e1 b  0.70  0.90  0.80<br>c  0.24  0.32  0.28<br>L D  6.30  6.70  6.60<br>e  1.53 REF<br>Gong ot EE e1  4.59 REF<br>E  6.70 7.30 7.00<br>ø E1  3.30 3.70 3.50<br>lll, 4! ERS= L  0.75 1.00 0.90<br>E E1<br>Ø  --  --  45°<br>Ø1  --  15°  --<br>Lo] ø 1 a c oe Ø2 All Dimensions in mm --  --  10°<br>t l Lb b e a n ø s 2<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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| Jf] o&<br>Y<br>at C1<br>Y1<br>| X C ag —<br>a<br>**----- End of picture text -----**<br>


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Dimensions  Value (in mm)<br>C 1.52<br>C1  4.60<br>X  0.95<br>Y  2.80<br>Y1  6.80<br>**----- End of picture text -----**<br>


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