XP9561GM

**XP9561GM** ~~Po~~ **Halogen-Free Product** 

_**P-CHANNEL ENHANCEMENT MODE POWER MOSFET**_ 

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▼  Simple Drive Requirement D<br>D<br>▼  Lower Gate Charge D<br>D<br>▼  Fast Switching Characteristic<br>▼  RoHS Compliant & Halogen-Free S S [G]<br>SO-8 S<br>**----- End of picture text -----**<br>


## **Description** 

XP9561 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. 

|BVDSS|-40V|
|---|---|
|RDS(ON)|18mΩ|
|ID|-9.4A|



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D<br>G<br>S<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter|Rating|Units|
|---|---|---|---|
|VDS<br>~~a ee~~|Drain-Source Voltage<br>~~ee~~|-40<br>~~ee~~|V<br>~~ee~~|
|VGS<br>~~a~~|Gate-Source Voltage|+<br>20|V|
|ID@TA=25℃<br>~~a~~<br>~~a~~|Drain Current3, VGS@ 10V|-9.4|A|
|ID@TA=70℃<br>~~a~~|Drain Current3, VGS@ 10V|-7.5|A|
|IDM<br>~~a~~|Pulsed Drain Current1|-40|A|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation|2.5|W|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a~~|OperatingJunction Temperature Range|-55 to 150|℃|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|50|℃/W|



**1** 

**202311172YAGEO** 

**XP9561GM** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a ee~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.<br>~~ee~~|Typ.<br>~~ee~~|Max.<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=-250uA|-40|-|-|V|
|RDS(ON)|Static Drain-Source On-Resistance2|VGS=-10V, ID=-9A|-|-|18|mΩ|
|||VGS=-4.5V, ID=-6A|-|-|30|mΩ|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=-250uA|-1|-|-3|V|
|gfs<br>~~a~~|Forward Transconductance<br>~~a~~<br>~~a~~|VDS=-10V, ID=-9A<br>~~a~~|-|9|-|S|
|IDSS<br>~~a~~|Drain-Source Leakage Current<br>~~a~~<br>~~a~~|VDS=-32V, VGS=0V|-|-|-10|uA|
|IGSS<br>~~a~~<br>~~a~~|Gate-Source Leakage|VGS=+<br>20V, VDS=0V|-<br>~~es~~|-|+<br>100|nA|
|Qg<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge|ID=-9A<br>VDS=-32V<br>VGS=-4.5V|-<br>~~es~~<br>~~es~~|26|42|nC|
|Qgs<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|4|-|nC|
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|17<br>~~ee~~|-<br>~~ee~~|nC<br>~~ee~~|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDS=-20V<br>ID=-1A<br>RG=3.3Ω<br>VGS=-10V|-<br>~~es~~<br>~~es~~<br>~~es~~|10<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~|
|tr<br>~~a~~<br>~~a~~<br>~~a~~|Rise Time||-<br>~~es~~<br>~~es~~<br>~~es~~|8<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~|
|td(off)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime||-<br>~~es~~<br>~~es~~<br>~~es~~|64|-|ns|
|tf<br>~~a~~<br>~~a~~<br>~~rs~~|Fall Time||-<br>~~es~~<br>~~es~~<br>~~es~~|54<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~|
|Ciss<br>~~a~~<br>~~rs~~<br>~~a~~|Input Capacitance<br>~~ee~~|VGS=0V<br>VDS=-25V<br>f=1.0MHz<br>~~|~~|-<br>~~es~~<br>~~es~~<br>~~|~~<br>||1700<br>~~ee~~<br>~~|~~|2720<br>~~ee~~<br>~~|~~|pF<br>~~ee~~<br>~~|~~|
|Coss<br>~~rs~~<br>~~a~~|Output Capacitance<br>~~ee~~||-<br>~~es~~<br>~~|~~<br>|<br>~~es~~|360<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~|~~|pF<br>~~ee~~<br>~~|~~|
|Crss<br>~~rs~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~||-<br>~~es~~<br>~~|~~<br>|<br>~~es~~|290<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~| ~~|pF<br>~~ee~~<br> ~~|~~|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=-2A, VGS=0V|-|-|-1.2|V|
|trr|Reverse Recovery Time|IS=-9A,VGS=0V,<br>dI/dt=100A/µs|-|32|-|ns|
|Qrr|Reverse RecoveryCharge||-|26|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

2.Pulse test 

3.Surface mounted on 1 in[2] copper pad of FR4 board, t < 10s ; 125 ℃ /W when mounted on Min. copper pad. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP9561GM** 

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40 40<br>T A = 25 [o] C            -10V T A = 1 5 0 [o] C            -10V<br>          -7.0V           -7.0V<br>          -5.0V            -5.0V<br>30           -4.5V 30           -4.5V<br>Fess (Pe V G S = -3.0 V<br>V G S = -3.0 V<br>20 20<br>100 100 ‘AHH<br>0 1 2 3 4 0 1 2 3 4 5 6<br>-V DS  , Drain-to-Source Voltage (V) -V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>30 2.0<br>I T  D  A  = - 6 A  =25 ℃ 1.8 VI  G SD  = - 9 A =-10V<br>26<br>=| 1.6 SSS<br>1.4<br>22<br>1.2<br>18<br>1.0<br>0.8<br>14<br>SE teenee 0.6 oF<br>10 iss 0.4<br>2 4 6 8 10 -50 0 50 100 150<br>-V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>10 2.6<br>8<br>| 2.2 SHR<br>6<br>1.8<br>T j =150 [o] C T j =25 [o] C<br>4<br>Ht 1.4 ae<br>2<br>0 oWetE] 1 TS<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150<br>-V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 5. Forward Characteristic of               Fig 6. Gate Threshold Voltage v.s.<br>          Reverse Diode           Junction Temperature<br> , Drain Current (A)  , Drain Current (A)<br>D D<br>-I -I<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R Normalized R<br> (V)<br>(A)S<br>-I GS(th)<br>-V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**3** 

**XP9561GM** 

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12<br>I D = -9A<br>V DS = -32V<br>10<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50<br>Q G  , Total Gate Charge (nC)<br>              Fig 7. Gate Charge Characteristics<br>100 =patame-raitsaae tata tats:<br>Slo~ Po Low bo ay ogi<br>TUT TA NTT ONT i<br>10 Operation in this arealimited by RDS(ON) KN 100us<br>\AK nna NoN man<br>1ms<br>ra rigeip rN ST NN |<br>CA ee SN<br>1 | 7 | | I ott ! ow! iN \ Lil<br>=i tome =r aaanis Eau Noe 10ms SED<br>Zi) PRL P4AH 1 iN Ne IAL<br>teerbt bF4++HHeet Norera Nib NS)Ni 100ms HIa<br>i} litt i} It i i} Id i} \ Lidl<br>0.1<br>TrEATrwAe THEATAA TT AtrAAT Ta 1s riot<br>0.01 Single  Pulse T t boA A =25 ettduoip= [o] C ttttatu bt2a tduie = aN t DC rH<br>0.01 0.1 1 10 100<br>-V DS  , Drain-to-Source Voltage (V)<br> , Gate to Source Voltage (V)<br>GS<br>-V<br>(A)<br>D<br>-I<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

**Fig 9. Maximum Safe Operating Area** 

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VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off)tf<br>**----- End of picture text -----**<br>


**Fig 11. Switching Time Waveform** 

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2400 f=1.0MHz<br>2000<br>1600 C iss<br>1200<br>800<br>400 C oss<br>C rss<br>0<br>1 5 9 13 17 21 25 29<br>-V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>


**Fig 8. Typical Capacitance Characteristics** 

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1 ATT<br>et Duty factor=0.5 eg<br>= TP) ea<br>0.2 YA<br>0.1 0.1 eeYo<br>0.05 eeeA Eenl<br>A<br>0.02 eases rrr<br>0.01 yy PDM<br>0.01 eea TUL t mt<br>PT ke! T iat!<br>Single Pulse / HEHE tH | Duty factor = t/TPeak T j  = P <1 DM  x R thja  + T a i<br>Rthja=125 [o] C/W<br>A TTT il<br>0.001 ANA I<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t , Pulse Width (s)<br>)thja<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 10. Effective Transient Thermal Impedance** 

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VG<br>QG<br>-4.5V<br>QGS QGD<br>p e /<br>Charge Q<br>**----- End of picture text -----**<br>


**Fig 12. Gate Charge Waveform** 

**4** 

**XP9561GM** 

## **MARKING INFORMATION** 

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Part Number<br>yy [| of meet Rohs requirement<br>9561GM for low voltage MOSFET only<br>Package Code<br>YWWSSS Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>|           SSS ： Sequence<br>**----- End of picture text -----**<br>


**5** 

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Package Outline : SO-8<br>D<br>Millimeters<br>SYMBOLS<br>MIN NOM MAX<br>A 1.35 1.55 1.75<br>8 7 6 5<br>A1 0.05 0.15 0.25<br>B 0.30 0.41 0.51<br>E1 E<br>D 4.80 5.05 5.30<br>E 5.79 6.00 6.20<br>1<br>2 3 4 E1 3.70 3.90 4.10<br>e 1.27 TYP<br>G 0.17 0.21 0.25<br>e F 0.38 0.83 1.27<br>ul l<br>B α 0° 4° 8°<br>A<br>1.All Dimension Are In Millimeters.<br>A1<br>a<br>2.Dimension Does Not Include Mold Protrusions.<br>.<br>G α<br>F<br>**----- End of picture text -----**<br>


Draw No.  M1-M8-G-v03 

**SO-8** 

## **SO-8 FOOTPRINT** ： 

- . 

- +] 

Draw No. M1-M8-G-v03 

1