XP6P025H

## **XP6P025H** ~~Po~~ **Halogen-Free Product** _**P-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

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D BVDSS -60V<br>R 25m Ω<br>DS(ON)<br>G ID -40A<br>S<br>process G ®<br>and fast D S TO-252(H)<br>**----- End of picture text -----**<br>


- **100% Rg & UIS Test** 

- **Simple Drive Requirement** 

- **Fast Switching Characteristic** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP6P025 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage|-60|V|
|VGS<br>~~a~~|Gate-Source Voltage<br>~~a~~|+<br>20|V|
|ID@TC=25℃<br>~~a ~~<br>~~a~~|Drain Current, VGS@ 10V<br> ~~a~~|-40|A|
|ID@TC=100℃<br>~~a~~|Drain Current, VGS@ 10V|-25|A|
|IDM<br>~~a~~|Pulsed Drain Current1|-160|A|
|PD@TC=25℃<br>~~a~~|Total Power Dissipation|62.5|W|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation3|2|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy4|28.8|mJ|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a ~~|OperatingJunction Temperature Range<br> ~~a~~|-55 to 150|℃|



## **Thermal Data** 

|Symbol|Parameter|Value|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|2|℃/W|
|Rthj-a|Maximum Thermal Resistance, Junction-ambient(PCB mount)3|62.5|℃/W|



**1** 

**202311271YAGEO** 

**XP6P025H** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Test Conditions<br>~~a~~|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=-250uA|-60|-|-|V|
|RDS(ON)|Static Drain-Source On-Resistance2|VGS=-10V, ID=-20A|-|-|25|mΩ|
|||VGS=-4.5V, ID=-15A|-|-|30|mΩ|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=-250uA|-1|-|-3|V|
|gfs<br>~~a~~|Forward Transconductance<br>~~a~~<br>~~GO~~|VDS=-10V, ID=-20A<br>~~GO~~|-<br>~~GO~~|47<br>~~GO~~|-<br>~~GO~~|S<br>~~GO~~|
|IDSS<br>~~a GC~~|Drain-Source Leakage Current<br>~~GC~~|VDS=-48V, VGS=0V<br>~~GC~~|-<br>~~GC~~|-<br>~~GC~~|-25<br>~~GC~~|uA<br>~~GC~~|
|IGSS<br>~~a~~<br>~~a~~|Gate-Source Leakage<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~CO~~|-<br>~~CO~~<br>~~es~~|-<br>~~CO~~|+<br>100<br>~~CO~~|nA<br>~~CO~~|
|Qg<br>~~a ~~<br>~~a~~<br>~~a~~|Total Gate Charge<br> ~~a~~|ID=-15A<br>VDS=-48V<br>VGS=-4.5V<br>~~CO~~|-<br>~~CO~~<br>~~es~~<br>~~es~~|37<br>~~CO~~|59.2<br>~~CO~~|nC<br>~~CO~~|
|Qgs<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|12|-|nC|
|Qgd<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~es~~<br>~~es~~|15|-|nC|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDS=-30V<br>ID=-20A<br>RG=3.3Ω<br>VGS=-10V|-<br>~~es~~<br>~~ee~~<br>~~es~~|11<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~|
|tr<br>~~a~~<br>~~a~~|Rise Time||-<br>~~es~~<br>~~es~~|40|-|ns|
|td(off)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime||-<br>~~es~~<br>~~es~~<br>~~es~~|84|-|ns|
|tf<br>~~a~~<br>~~a~~|Fall Time||-<br>~~es~~<br>~~es~~|79|-|ns|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance|VGS=0V<br>VDS=-25V<br>f=1.0MHz|-<br>~~es~~<br>~~ee~~|4000<br>~~ee~~|6400<br>~~ee~~|pF<br>~~ee~~|
|Coss<br>~~a~~|Output Capacitance||-<br>~~se~~|240<br>~~se~~|-<br>~~se~~|pF<br>~~se~~|
|Crss<br>~~a~~|Reverse Transfer Capacitance||-<br>~~ee~~|170<br>~~ee~~|-<br>~~ee~~|pF<br>~~ee~~|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=-20A, VGS=0V|-|-|-1.3|V|
|trr|Reverse RecoveryTime|IS=-20A, VGS=0V,<br>dI/dt=-100A/µs|-|23|-|ns|
|Qrr|Reverse RecoveryCharge||-|17|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

- 2.Pulse test 

- 3.Surface mounted on 1 in[2] copper pad of FR4 board 

- 4.Starting Tj=25[o] C , VDD=-30V , L=0.1mH , RG=25 Ω 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP6P025H** 

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80<br>T C =150 C =150 =150 [[o]] C          -10V<br>          -7.0V<br>          -6.0V<br>60           -5.0V<br>«ERE    V G = -4.0V G = -4.0V = -4.0V<br>40<br>20<br>0 VEE<br>0 1 2 3 4 5<br>-V DS  , Drain-to-Source Voltage (V) DS  , Drain-to-Source Voltage (V)  , Drain-to-Source Voltage (V)<br> , Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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160<br>T C = 25 [o] C            - 10 V T C =150 C =150 =150 [[o]] C           -7.0V          -10V<br>          - 7.0 V<br>          -6.0V<br>          - 6.0 V<br>120 60           -5.0V<br>          - 5.0 V<br>TAAL) «ERE    V G = -4.0V G = -4.0V = -4.0V<br>80 40<br>    V G = - 4.0 V<br>40 20<br>0 Proot 0 VEE<br>0 2 4 6 8 10 0 1 2 3 4 5<br>-V DS  , Drain-to-Source Voltage (V) -V DS  , Drain-to-Source Voltage (V) DS  , Drain-to-Source Voltage (V)  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics  Fig 2. Typical Output Characteristics<br>22 2.4<br> I D = -15 A I D =   - 20 A<br>  T C =25 [o] C 2.0 V G =  -10V<br>20<br>pedbfee] 0 BRAEEEEEE<br>1.6<br>18<br>Pp \ ] fe<br>1.2<br>16<br>0.8<br>14 SEMA] 0.4 EEE:<br>2 4 6 8 10 -100 -50 0 50 100 150<br>-V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage  Fig 4. Normalized On-Resistance<br>           v.s. Junction Temperature<br>40 2.0<br>I D = - 250uA<br>30 1.5<br>20 T j =150 [o] C T j =25 [o] C 1.0<br>10 0.5<br>0 HE 0.0 GHEE<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -100 -50 0 50 100 150<br>-V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 5. Forward Characteristic of               Fig 6. Gate Threshold Voltage v.s.<br>          Reverse Diode           Junction Temperature<br> , Drain Current (A)  , Drain Current (A)<br>D D<br>-I -I<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R Normalized R<br>GS(th)<br>(A)-IS<br>Normalized  V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 2. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 5. Forward Characteristic of Reverse Diode** 

**3** 

**XP6P025H** 

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f=1.0MHz<br>10 8000<br>V DS =  -48 V<br>I D =  - 15 A<br>8<br>6000<br>6<br>4000<br>C iss<br>4<br>2000<br>2<br>C  oss<br>C rss<br>0 / 0 meee<br>0 20 40 60 80 1 21 41 61 81<br>Q G  , Total Gate Charge (nC) -V DS  , Drain-to-Source Voltage (V)<br>              Fig 7. Gate Charge Characteristics              Fig 8. Typical Capacitance Characteristics<br>1000 SS—-l- 444441, -- bos bale 1 Saee Duty factor=0.5 emdie<br>Sole a abt it tek PTTAy<br>100 : Operation in this area ala aleialadateaa a cxoemmenla 0.2 HSM Y<br>limited by RDS(ON) 0.1 0.1<br>| RNSoi Nr T I Tit UTeeeALAne| LTTTLcel<br>i Z NOUINE \ PYG 0.05 po aie, Amen|<br>10us<br>10 Spa NE INSET E77 0.02<br>100us 0.01<br>7 2 oseee i NN Nee Single Pulse PDM<br>ON 0.01 tN t<br>1 NS It i} i} i} imal i} \ 1ms inet ptPE T my<br>iL T C =25 [o] C 10ms r PE DutPeak Ty factor = t/T oem j = PDM x Rthjc + TC<br>Single  Pulse I | | | tt | | DC Itt<br>0.1 ia i i i imal i i imal 0.001<br>0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1<br>-V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>               Fig 9. Maximum Safe Operating Area       Fig 10. Effective Transient Thermal Impedance<br>80<br>||||||<br>et| | et let | ed | len el ie | ld elle | VG<br>||||||<br>| | | | |<br>60 {| {| {| {|<br>|||| QG<br>| | | |<br>—~LoIL~ te de rs re ee ee -4.5V<br>| | |<br>40 QGS QGD<br>SNF<br>I |<br>20<br>Charge Q<br>0<br>0 50 100 150<br>T C ,  Case Temperature (  [o] C )<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>-V<br>)thjc<br>(A)<br>D<br>-I<br>Normalized Thermal Response (R<br> (W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

**Fig 9. Maximum Safe Operating Area** 

**Fig 10. Effective Transient Thermal Impedance** 

**Fig 11. Typical Power Dissipation** 

**Fig 12. Gate Charge Waveform** 

**4** 

**XP6P025H** 

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2 80<br>I D  = -1mA V DS = -5V T j =25 [o] C T j =150 [o] C<br>1.6<br>poppet 60 poy<br>1.2<br>40<br>0.8<br>20<br>0.4<br>0 HEE 0 ZETAT<br>-100 -50 0 50 100 150 0 1 2 3 4 5 6<br>T  j  , Junction Temperature ( [o] C) -V GS  , Gate-to-Source Voltage (V)<br>              Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction               Fig 14. Transfer Characteristics<br>            Temperature<br>200<br>T j =25 [o] C<br>160 pepe<br>PEP ere<br>120<br>80<br>40<br>           -4.5V<br>V  GS  = -10V<br>0<br>0 20 40 60 80 100<br>-I D  , Drain Current (A)<br>DSS<br>Normalized BV  , Drain Current (A)D<br>-I<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction Temperature** 

**Fig 15. Typ. Drain-Source on State Resistance** 

**5** 

**XP6P025H** 

## **MARKING INFORMATION** 

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Part Number<br>6P025<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

## **Package Outline : TO-252** 

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Millimeters<br>SYMBOLS<br>MIN NOM MAX<br>D<br>A2 2.18 2.30 2.40<br>rr<br>A3 0.40 0.50 0.65<br>D1<br>— —|)| eeee ee<br>B 0.40 0.70 1.00<br>= E2 Sy B1 0.50 0.85 1.20<br>D 6.00 6.50 6.80<br>D1 4.80 5.35 5.90<br>mai ne E3 —— E3 4.00 (ref.)<br>E1<br>F 2.00 2.63 3.05<br>F1 0.50 0.85 1.20<br>E1 5.00 5.70 6.30<br>E2 0.50 1.10 1.80<br>F1 e 2.3 (ref)<br>C 0.35 0.525 0.70<br>B1<br>F<br>B2 A1 0.00 － 0.25<br>B<br>B2 － － 1.25<br>a e e SEE L 0.90 1.34 1.78<br>.<br>_<br>A2<br>Ved uP C<br>| A1 f okt<br>A3 L<br>|<br>1.All Dimensions Are in Millimeters.<br>**----- End of picture text -----**<br>


2.Dimension Does Not Include Mold Protrusions. 

3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. 

Draw No.  M1-H3EFIMT-G-v10 

**TO-252** 

## **TO-252 FOOTPRINT** ： 

## . rT 

Draw No. M1-H3EFIMT-G-v10