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XP6NA8R0CST
MOS N 60V 18.5A 8MOHM SPPAK5X6
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: YAGEO XSEMI
- Product type: Single MOSFETs
- SVHC: No SVHC (23-Jan-2024)
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.177 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **XP6NA8R0CST** ~~[oo~~ **Halogen-Free Product**
_**N-CHANNEL ENHANCEMENT MODE POWER MOSFET**_
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**----- Start of picture text -----**<br>
D BVDSS 60V<br>RDS(ON) 8m Ω<br>G<br>S D<br>process<br>and fast<br>an extreme [G]<br>[S]<br>S [S]<br>**----- End of picture text -----**<br>
- **100% Rg & UIS Test**
- **Simple Drive Requirement**
- **Low On-resistance**
- **RoHS Compliant & Halogen-Free**
## **Description**
XP6NA8R0C series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SPPAK 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile.
**SPPAK 5x6**
## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage<br>~~a~~|60|V|
|VGS<br>~~a~~|Gate-Source Voltage<br>~~a~~<br>~~a~~|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|69|A|
|ID@TC=100℃<br>~~a~~<br>~~a~~|Drain Current , VGS@ 10V<br>~~a~~<br>~~a~~<br>~~ee~~|43.7|A|
|ID@TA=25℃<br>~~a~~|Drain Current, VGS@ 10V3<br>~~ee~~|18.5|A|
|ID@TA=70℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V3<br>~~ee~~<br>~~a~~<br>~~a~~|14.8|A|
|IDM<br>~~a~~|Pulsed Drain Current1<br>~~a~~|160|A|
|PD@TC=25℃<br>~~a~~|Total Power Dissipation<br>~~a~~<br>~~a~~|69.4|W|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation3|5|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy4|28.8|mJ|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a ~~|OperatingJunction Temperature Range<br> ~~ee~~|-55 to 150<br>~~ee~~|℃<br>~~ee~~|
## **Thermal Data**
|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|1.8|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|℃/W|
**1**
**202401191YAGEO**
**XP6NA8R0CST**
## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.|Typ.<br>~~ee~~|Max.<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~eG~~|VGS=0V, ID=250uA<br>~~ee~~<br>~~eG~~|60<br>~~eG~~|-<br>~~ee~~<br>~~eG~~|-<br>~~ee~~<br>~~eG~~|V<br>~~ee~~<br>~~eG~~|
|RDS(ON)<br>~~pO~~|Static Drain-Source On-Resistance2<br>~~pO~~|VGS=10V, ID=20A<br>~~pO~~|-<br>~~pO~~|-<br>~~pO~~|8<br>~~pO~~|mΩ<br>~~pO~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~eG~~|VDS=VGS, ID=250uA<br>~~eG~~|2<br>~~eG~~|-<br>~~eG~~|4<br>~~eG~~|V<br>~~eG~~|
|gfs<br>~~pO~~|Forward Transconductance<br>~~pO~~|VDS=5V, ID=30A<br>~~pO~~|-<br>~~pO~~|38<br>~~pO~~|-<br>~~pO~~|S<br>~~pO~~|
|IDSS<br>~~a~~<br>~~a~~|Drain-Source Leakage Current<br>~~eG~~<br>~~ee~~|VDS=48V, VGS=0V<br>~~eG~~<br>~~eG~~|-<br>~~eG~~<br>~~G~~|-<br>~~eG~~<br>~~G~~|10<br>~~eG~~<br>~~G~~|uA<br>~~eG~~<br>~~G~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~ee~~|VGS=+<br>20V, VDS=0V<br>~~eG~~|-<br>~~G~~|-<br>~~G~~|+<br>0.1<br>~~G~~|uA<br>~~G~~|
|Qg<br>~~a~~<br>~~es~~<br>~~es~~|Total Gate Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~|ID=30A<br>VDS=30V<br>VGS=10V<br>~~eG~~<br>~~|~~|-<br>~~G~~<br>~~a~~<br>~~|~~<br>~~**|**~~|25<br>~~G~~<br>~~a~~|40<br>~~G~~<br>~~a~~|nC<br>~~G~~<br>~~a~~|
|Qgs<br>~~es~~<br>~~es~~<br>~~es~~|Gate-Source Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|7<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|Qgd<br>~~es~~<br>~~es~~<br>~~es~~|Gate-Drain("Miller")Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~a~~|9<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|td(on)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-on DelayTime5<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDS=30V<br>ID=30A<br>RG=1Ω<br>VGS=10V<br>~~|~~|-<br>~~a~~<br>~~a~~<br>~~a~~|10<br>~~a~~<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~<br>~~a~~|
|tr<br>~~es~~<br>~~es~~<br>~~rs~~|Rise Time5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~a~~<br>~~|~~<br>~~**|**~~|55<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|td(off)<br>~~es~~<br>~~rs~~<br>~~es~~|Turn-off DelayTime5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|17<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|tf<br>~~rs~~<br>~~es~~<br>~~es~~|Fall Time5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~a~~|5<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|Ciss<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance5<br>~~ee~~<br>~~ee~~<br>~~ee~~|VGS=0V<br>VDS=50V<br>f=1.0MHz<br>~~|~~<br>~~pot~~|-<br>~~a~~<br>~~a~~<br>~~|~~<br>~~|~~|1100<br>~~a~~<br>~~a~~<br>~~|~~|1760<br>~~a~~<br>~~a~~|pF<br>~~a~~<br>~~a~~|
|Coss<br>~~es~~<br>~~es~~<br>~~rr~~|Output Capacitance5<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~|~~<br>~~pot~~|250<br>~~a~~<br>~~|~~<br>~~pot|~~|-<br>~~a~~<br>~~|~~|pF<br>~~a~~<br>~~|~~|
|Crss<br>~~es~~<br>~~rr~~<br>~~a~~|Reverse Transfer Capacitance5<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~pot~~|20<br>~~|~~<br>~~pot|~~|-<br>~~|~~|pF<br>~~|~~|
|Rg<br>~~rr~~<br>~~a~~|Gate Resistance<br>~~ee~~|f=1.0MHz<br>~~pot~~|-<br>~~pot~~|1.5<br>~~pot |~~|3<br>~~|~~|Ω<br>~~|~~|
## **Source-Drain Diode**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=20A, VGS=0V|-|-|1.3|V|
|trr|Reverse Recovery Time5|IS=30A,VGS=0V,<br>dI/dt=100A/µs|-|30|-|ns|
|Qrr|Reverse RecoveryCharge5||-|22|-|nC|
## **Notes:**
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec ; 60[o] C/W at steady state.
4.Starting Tj=25[o] C , VDD=30V , L=0.1mH , RG=25 Ω
- 5.Guaranteed by design.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**2**
**XP6NA8R0CST**
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160 100<br>T C =25 [o] C 10V T C = 150 [o] C 10V<br>140 9.0V 9.0V<br>8.0V 80 8.0V<br>120<br>Eo] po<br>7.0V 7.0V<br>100 0.95m Ω<br>60<br>80 V GS = 6.0V V GS = 6.0V<br>40<br>60<br>40<br>20<br>20<br>0 ae 0<br>0 2 4 6 8 10 0 2 4 6 8 10<br>V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)<br> Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>22 2.0<br>I D = 20 A I D =20A D =20A =20A<br>T C =25 [o] C V GS =10V<br>1814 Sa]oe 1.61.2 PERE<br>10 0.8<br>6 PS 0.4<br>4 6 8 10 -100 -50 0 50 100<br>V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( j , Junction Temperature ( , Junction Temperature ( [[o]] C)<br> Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance<br> v.s. Junction Temperature<br>20 2.0<br>I D =250uA<br>16 1.6<br>12 1.2<br>fee) T j =150 [o] C T j =25 [o] C<br>8 0.8<br>4 0.4<br>0 SHE) 0.0 EEE<br>0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100<br>V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( j , Junction Temperature ( , Junction Temperature ( [[o]] C)<br> , Drain Current (A) , Drain Current (A)<br>ID ID<br>)<br>Ω DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>
**Fig 1. Typical Output Characteristics**
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2.0<br>I D =20A D =20A =20A<br>V GS =10V<br>PERE<br>1.21.61.2<br>0.8<br>0.4<br>-100 -50 0 50 100 150<br>T j , Junction Temperature ( j , Junction Temperature ( , Junction Temperature ( [[o]] C)<br> Fig 4. Normalized On-Resistance<br> v.s. Junction Temperature<br>2.0<br>I D =250uA<br>1.6<br>1.2<br>0.8<br>0.4<br>0.0 EEE<br>-100 -50 0 50 100 150<br>T j , Junction Temperature ( j , Junction Temperature ( , Junction Temperature ( [[o]] C)<br> Fig 6. Gate Threshold Voltage v.s.<br> Junction Temperature<br>DS(ON)<br>Normalized R<br>GS(th)<br>Normalized V<br>**----- End of picture text -----**<br>
**Fig 3. On-Resistance v.s. Gate Voltage**
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Fig 5. Forward Characteristic of<br> Reverse Diode<br>**----- End of picture text -----**<br>
**3**
**XP6NA8R0CST**
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12<br>I D = 30 A<br>10 V DS =30V<br>8<br>6<br>4<br>2<br>0<br>0 6 12 18 24 30<br>Q G , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
**Fig 7. Gate Charge Characteristics**
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f=1.0MHz<br>2500<br>2000<br>0.95m Ω<br>1500<br>1000 NeaSe C iss<br>500<br>C oss<br>0 NS LL C rss<br>1 11 21 31 41 51 61 71<br>V DS , Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>
**Fig 8. Typical Capacitance Characteristics**
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1000 Par ssstq2 242 PP tone ===4=598H 1 SE a<br>Duty factor=0.5<br>100 Operation in this SEssht Seabet SeE RO Fut ee<br>area limited by Tn KASS SS EZ)|<br>R er DS(ON) POPP 10us 0.10.2<br>10 7 Sct ad 0.1 A<br>a ! ! ! ; ‘ ae NC ! ! AN<br>100us 0.05<br>P DM<br>0.02 t<br>T<br>1 1ms 0.01<br>T C =25 [o] C DC Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + Tc<br>Single Pulse<br>0.1 0.01<br>0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1<br>V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
**Fig 9. Maximum Safe Operating Area**
**Fig 10. Effective Transient Thermal Impedance**
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80<br>60<br>40<br>20<br>0<br>25 50 75 100 125 150<br>T C , Case Temperature ( [o] C )<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Fig 11. Drain Current v.s. Case Temperature**
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60<br>V DS =5V<br>50<br>40<br>30<br>20<br>T j =150 [o] C<br>10 T j =25 [o] C<br>T j =-55 [o] C<br>0<br>0 2 4 6 8 10<br>V GS , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Fig 12. Transfer Characteristics**
**4**
**XP6NA8R0CST**
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2 80<br>I D =1mA<br>1.6<br>60<br>peepee ere ] Pf<br>0.95m Ω<br>1.2<br>peepee) 40 OK<br>0.8<br>20<br>0.4<br>0 TE) 0 FBSaN<br>-100 -50 0 50 100 150 0 50 100 150<br>T j , Junction Temperature ( [o] C) T C , Case Temperature( [o] C)<br> Fig 13. Normalized BVDSS v.s. JunctionDSS v.s. Junction v.s. Junction Fig 14. Total Power Dissipation<br> Temperature<br>60<br>T j =25 [o] C<br>50<br>40<br>30 a<br>20<br>SEEgESEnEges<br>10 V GS =10V<br>0 pereeeeeeteS<br>0 20 40 60 80 100 120<br>I D , Drain Current (A)<br>DSS<br>Normalized BV<br>, Power Dissipation(W)<br>D<br>P<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
**Fig 13. Normalized BVDSS v.s. JunctionDSS v.s. Junction v.s. Junction Temperature**
**Fig 15. Typ. Drain-Source on State Resistance**
**5**
**XP6NA8R0CST**
## **MARKING INFORMATION**
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Part Number<br>6NA8R0C<br>YWWSSS<br>— —<br>Date Code (YWWSSS)<br> Y ： Last Digit Of The Year<br>THEE<br> WW ： Week<br> SSS ： Sequence<br>**----- End of picture text -----**<br>
**6**
## **Package Outline : SPPAK 5X6**
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Millimeters<br>E SYMBOLS<br>MIN NOM MAX<br>— b2 — Ee<br>A 1.00 - 1.30<br>ee<br>A1 0 0.075 0.15<br>L1<br>A2 0.98 1.05 1.12<br>—<br>Af b 0.35 ee 0.42 ee 0.50 ee<br>b2 4.02 4.23 4.41<br>i ane 1 c 0.19 0.22 0.25 —<br>D1<br>c1 0.24 0.27 0.30<br>D D 4.45 - 4.70<br>H<br>Eject Pin Mark D1 - - 4.45<br>| On | ee<br>ro es ee ee<br>E 4.95 - 5.30<br>E1 E1 3.50 - 3.70<br>e 1.27 BSC<br>L2 H 5.95 - 6.25<br>YOSet]Go | REE L 0.40 - 0.85<br>_ e | — L1 0.27 - 0.57<br>b<br>L2 0.80 - 1.30<br>ee<br>.<br>1.All Dimensions Are in Millimeters.<br>2.Dimension Does Not Include Mold Protrusions.<br>A2 A<br>Toon P+<br>c1<br>A1 c<br>Set —$<br>L<br>**----- End of picture text -----**<br>
. 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions.
Draw No. M1-CST4I-G-v02
## **SPPAK 5X6**
## **SPPAK 5X6 FOOTPRINT** ：
# **.** }
Draw No. M1-CST4I-G-v02
Updated at June 9, 2026
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