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XP6932MT
MOS DUAL N + N 30V/30V 14.2A/22.9A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: YAGEO XSEMI
- Product type: Dual MOSFETs
- SVHC: No SVHC (23-Jan-2024)
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.26 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **XP6932MT** ~~Po~~ **Halogen-Free Product**
_**ASYMMETRIC DUAL N-CHANNEL**_
## _**ENHANCEMENT MODE POWER MOSFET**_
**==> picture [237 x 234] intentionally omitted <==**
**----- Start of picture text -----**<br>
D1 CH-1 BVDSS 30V<br>G1 RDS(ON) 5.5m Ω<br>D2/S1 CH-2 BVDSS 30V<br>RDS(ON) 2.5m Ω<br>G2<br>S2 G2<br>S2<br>S2<br>G2 S2 S2 S2 S2<br>S1/D2<br>G1<br>D1<br>D1 D1<br>D1<br>PMPAK [®] 5x6<br>G1 D1 D1 D1<br>**----- End of picture text -----**<br>
- **Simple Drive Requirement**
- **Easy for DC/DC Buck**
- **Converter Application** ▼ **RoHS Compliant & Halogen-Free**
## **Description**
XP6932 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The control MOSFET (CH-1) and synchronous MOSFET (CH-2) co-package for synchronous buck converters.
## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a~~<br>~~ee~~<br>~~ee~~|Parameter<br>~~eeee~~<br>~~es~~<br>|Rating<br>~~ee~~|Rating<br>~~ee~~|Units<br>~~ee~~<br>~~es~~<br>|
|---|---|---|---|---|
|||CH-1<br>~~ee~~<br>~~es~~<br>~~ss~~<br>|CH-2<br>~~ee~~<br>~~es~~<br>~~ss~~<br>||
|VDS<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Drain-Source Voltage<br>~~eeee~~<br>~~es~~<br><br>|30<br>~~ee~~<br>~~es~~<br>~~ss~~<br><br>~~es~~<br>|30<br>~~ee~~<br>~~es~~<br>~~ss~~<br><br>~~es~~<br>|V<br>~~ee~~<br>~~es~~<br><br>|
|VGS<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-Source Voltage<br>~~es~~<br>~~es~~<br>|+<br>20<br>~~es~~<br>~~ss~~<br>~~es~~<br>~~es~~<br>|+<br>20<br>~~es~~<br>~~ss~~<br>~~es~~<br>~~es~~<br>|V<br>~~es~~<br>~~es~~<br>|
|ID@TC=25℃<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Drain Current(Package Limited)<br>~~es~~<br>~~es~~<br>~~es~~<br>|28<br>~~ss~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~ss~~<br>~~es~~<br>|40<br>~~ss~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~ss~~<br>~~Gs~~<br>|A<br>~~es~~<br>~~es~~<br>|
|ID@TA=25℃<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Drain Current , VGS@ 10V3<br><br>~~es~~<br>|14.2<br>~~es ~~<br><br>~~ss~~<br>~~es~~<br><br>~~ss~~|22.9<br> ~~es~~<br><br>~~ss~~<br>~~Gs~~<br><br>~~ss~~|A<br><br>|
|ID@TA=70℃<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Drain Current , VGS@ 10V3<br>~~es~~<br>~~es~~<br>~~es~~<br>|11.3<br>~~ss~~<br>~~es~~<br>~~es~~<br>~~ss~~<br>~~es~~<br>|18.4<br>~~ss~~<br>~~Gs~~<br>~~es~~<br>~~ss~~<br>~~Gs~~<br>|A<br>~~es~~<br>|
|IDM<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|Pulsed Drain Current1<br>~~es ~~<br><br>~~es~~<br>|112<br> ~~es~~<br><br>~~ss~~<br>~~es~~<br><br>~~ss~~|160<br>~~Gs~~<br><br>~~ss~~<br>~~Gs~~<br><br>~~ss~~|A<br><br>|
|PD@TA=25℃<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~a~~|Total Power Dissipation3<br>~~es~~<br>~~es~~<br>~~es~~|1.78<br>~~ss~~<br>~~es~~<br>~~es~~<br>~~ss~~<br>~~Gs~~|2.08<br>~~ss~~<br>~~Gs~~<br>~~es~~<br>~~ss~~<br>~~es~~|W<br>~~es~~|
|EAS<br>~~ee~~<br>~~es~~<br>~~a~~|Single Pulse Avalanche Energy6<br>~~es ~~<br><br>~~es~~|18<br> ~~es~~<br><br>~~ss~~<br>~~Gs~~|32<br>~~Gs~~<br><br>~~ss~~<br>~~es~~|mJ<br>|
|TSTG<br>~~es~~<br>~~a~~<br>~~ee~~|Storage Temperature Range<br>~~es~~<br>~~es~~|-55 to 150<br>~~ss~~<br>~~Gses~~<br>~~es~~<br>~~ee~~||℃<br>~~es~~|
|TJ<br>~~ee~~|OperatingJunction Temperature Range<br>~~es~~|-55 to 150<br>~~es~~<br>~~ee~~||℃<br>~~es~~|
## **Thermal Data**
|Symbol|Parameter|Rating|Rating|Units|
|---|---|---|---|---|
|||CH-1|CH-2||
|Rthj-c|Maximum Thermal Resistance,Junction-case|5|3|℃/W|
|Rthj-t|Maximum Thermal Resistance,Junction-top|15|9|℃/W|
|Rthj-a|Maximum Thermal Resistance, Junction-ambient3|70|60|℃/W|
|Rthj-a|Maximum Thermal Resistance, Junction-ambient4|130|120|℃/W|
**1**
**202312041YAGEO**
**XP6932MT**
## **CH-1 Electrical Characteristics@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.<br>~~ee~~|Typ.<br>~~ee~~|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~ee ~~<br>|VGS=0V, ID=250uA<br> ~~ee~~<br>|30<br>~~ee~~<br>|-<br>~~ee~~<br>|-<br>|V<br>|
|VDSt<br>~~eee~~|Drain-Source Breakdown Voltage7<br>(transient)<br>~~eee~~|VGS=0V, IAS=60A,<br>ttransient <<br> 50ns<br>~~eee~~|36<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|V<br>~~eee~~|
|RDS(ON)<br>~~a~~<br>~~a~~|Static Drain-Source On-Resistance2<br>~~a~~<br>~~es~~|VGS=10V, ID=14A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|5.5<br>~~eee~~|mΩ<br>~~eee~~|
|||VGS=4.5V, ID=7A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|8.8<br>~~eee~~|mΩ<br>~~eee~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~es~~|VDS=VGS, ID=250uA|1.3|-|2.2|V|
|gfs<br>~~a~~<br>~~a~~|Forward Transconductance<br>~~es~~|VDS=5V, ID=14A|-|52|-|S|
|IDSS<br>~~a ~~|Drain-Source Leakage Current<br> ~~a~~|VDS=24V, VGS=0V|-|-|10|uA|
|IGSS<br>~~a~~|Gate-Source Leakage<br>|VGS=+<br>20V, VDS=0V|-|-|+<br>0.1|uA|
|Qg(10V)<br>~~aee~~<br>~~ee~~|Total Gate Charge5<br>~~ee~~<br>~~ee~~|ID=16A<br>VDS=15V|-<br>~~a~~<br>~~a~~|19<br>~~a~~<br>~~a~~|30.4<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|Qg(4.5V)<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Total Gate Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~a~~<br>~~ee~~|9<br>~~a~~<br>~~a~~<br>~~ee~~|14.4<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~ee~~|nC<br>~~a~~<br>~~a~~<br>~~ee~~|
|Qgs<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-Source Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~|4<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~<br>~~ee~~|nC<br>~~a~~<br>~~ee~~|
|Qgd<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-Drain("Miller")Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~a~~|3<br>~~ee~~<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~|nC<br>~~ee~~<br>~~ee~~<br>~~a~~|
|td(on)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on DelayTime5<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDS=15V<br>ID=16A<br>RG=3Ω<br>VGS=10V|-<br>~~a~~<br>~~a~~|8<br>~~a~~<br>~~a~~|-<br>~~ee~~<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|tr<br>~~ee~~<br>~~ee~~<br>~~es~~|Rise Time5<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~a~~<br>~~ee~~|54<br>~~a~~<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~a~~<br>~~ee~~|ns<br>~~a~~<br>~~a~~<br>~~ee~~|
|td(off)<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~rs~~|Turn-off DelayTime5<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~<br>~~ee~~|18<br>~~a~~<br>~~ee~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br>~~a~~<br>~~ee~~<br>~~ee~~|
|tf<br>~~es~~<br>~~ee~~<br>~~rs~~|Fall Time5<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|3<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|
|Ciss<br>~~ee~~<br>~~rs~~<br>~~ee~~|Input Capacitance5<br>~~ee~~<br>~~ee~~|VGS=0V<br>VDS=15V<br>f=1.0MHz|-<br>~~ee~~<br>~~pot~~<br>~~ee~~|1070<br>~~ee~~<br>~~pot~~<br>~~ee~~|1712<br>~~ee~~<br>~~ee~~<br>~~pot~~<br>~~ee~~|pF<br>~~ee~~<br>~~pot~~<br>~~ee~~|
|Coss<br>~~rs~~<br>~~ee~~<br>~~ee~~|Output Capacitance5<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~a~~|550<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~ee~~<br>~~a~~|pF<br>~~ee~~<br>~~a~~|
|Crss<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance5<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~a~~|30<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|pF<br>~~ee~~<br>~~a~~|
|Rg<br>~~ee~~<br>~~a ~~|Gate Resistance<br>~~ee~~<br> ~~a~~|f=1.0MHz|-<br>~~a~~|2.2<br>~~a~~|4.4<br>~~a~~|Ω<br>~~a~~|
## **Source-Drain Diode**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=16A, VGS=0V|-|-|1.2|V|
|trr|Reverse RecoveryTime5|IS=16A, VGS=0V<br>dI/dt=100A/µs|-|23|-|ns|
|Qrr|Reverse RecoveryCharge5||-|13|-|nC|
**2**
**XP6932MT**
## **CH-2 Electrical Characteristics@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a~~|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a ~~|Drain-Source Breakdown Voltage<br> ~~a~~|VGS=0V, ID=250uA|30|-|-|V|
|VDSt<br>~~a~~|Drain-Source Breakdown Voltage7<br>(transient)<br>~~ee~~|VGS=0V, IAS=80A,<br>ttransient <<br> 50ns<br>~~eee~~|36<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|V<br>~~ee~~|
|RDS(ON)<br>~~a~~|Static Drain-Source On-Resistance2<br>~~ee~~|VGS=10V, ID=20A<br>~~eee~~|-<br>~~ee~~|-<br>~~ee~~|2.5<br>~~ee~~|mΩ<br>~~ee~~|
|||VGS=4.5V, ID=12A<br>~~eee~~|-<br>~~ee~~|-<br>~~ee~~|3.9<br>~~ee~~|mΩ<br>~~ee~~|
|VGS(th)<br>~~a ~~<br>~~a~~|Gate Threshold Voltage<br> ~~ee~~|VDS=VGS, ID=250uA<br>~~eee ~~|1.3<br> ~~ee~~|-<br>~~ee~~|2.2<br>~~ee~~|V<br>~~ee~~|
|gfs<br>~~a ~~|Forward Transconductance<br> ~~a~~|VDS=5V, ID=20A|-|92|-|S|
|IDSS<br>~~a~~|Drain-Source Leakage Current<br>~~es~~|VDS=24V, VGS=0V|-|-|10|uA|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~es~~|VGS=+<br>20V, VDS=0V|-|-|+<br>0.1|uA|
|Qg(10V)<br>~~a~~<br>~~ee~~<br>~~ee~~|Total Gate Charge5<br>~~es~~<br>~~ee~~<br>~~ee~~|ID=20A<br>VDS=15V|-<br>~~a~~<br>~~ee~~|40<br>~~a~~<br>~~ee~~|64<br>~~a~~<br>~~ee~~|nC<br>~~a~~<br>~~ee~~|
|Qg(4.5V)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Total Gate Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~<br>~~a~~|19<br>~~a~~<br>~~ee~~<br>~~a~~|30.4<br>~~a~~<br>~~ee~~<br>~~a~~|nC<br>~~a~~<br>~~ee~~<br>~~a~~|
|Qgs<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-Source Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~a~~<br>~~ee~~|9<br>~~ee~~<br>~~a~~<br>~~ee~~|-<br>~~ee~~<br>~~a~~<br>~~ee~~|nC<br>~~ee~~<br>~~a~~<br>~~ee~~|
|Qgd<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-Drain("Miller")Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~<br>~~a~~|5<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~<br>~~ee~~<br>~~a~~|nC<br>~~a~~<br>~~ee~~<br>~~a~~|
|td(on)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on DelayTime5<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDS=15V<br>ID=20A<br>RG=3Ω<br>VGS=10V|-<br>~~ee~~<br>~~a~~<br>~~ee~~|10<br>~~ee~~<br>~~a~~<br>~~ee~~|-<br>~~ee~~<br>~~a~~<br>~~ee~~|ns<br>~~ee~~<br>~~a~~<br>~~ee~~|
|tr<br>~~ee~~<br>~~ee~~<br>~~ee~~|Rise Time5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~<br>~~a~~|47<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~<br>~~ee~~<br>~~a~~|ns<br>~~a~~<br>~~ee~~<br>~~a~~|
|td(off)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-off DelayTime5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~a~~<br>~~ee~~|28<br>~~ee~~<br>~~a~~<br>~~ee~~|-<br>~~ee~~<br>~~a~~<br>~~ee~~|ns<br>~~ee~~<br>~~a~~<br>~~ee~~|
|tf<br>~~ee~~<br>~~ee~~<br>~~ee~~|Fall Time5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~<br>~~a~~|6<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~<br>~~ee~~<br>~~a~~|ns<br>~~a~~<br>~~ee~~<br>~~a~~|
|Ciss<br>~~ee~~<br>~~ee~~<br>~~ee~~|Input Capacitance5<br>~~ee~~<br>~~ee~~<br>~~ee~~|VGS=0V<br>VDS=15V<br>f=1.0MHz|-<br>~~ee~~<br>~~a~~<br>~~ee~~|2450<br>~~ee~~<br>~~a~~<br>~~ee~~|3920<br>~~ee~~<br>~~a~~<br>~~ee~~|pF<br>~~ee~~<br>~~a~~<br>~~ee~~|
|Coss<br>~~ee~~<br>~~ee~~<br>~~ee~~|Output Capacitance5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~<br>~~a~~|1450<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~<br>~~ee~~<br>~~a~~|pF<br>~~a~~<br>~~ee~~<br>~~a~~|
|Crss<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance5<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~a~~|50<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|pF<br>~~ee~~<br>~~a~~|
|Rg<br>~~ee~~<br>~~a ~~|Gate Resistance<br>~~ee~~<br> ~~a~~|f=1.0MHz|-<br>~~a~~|1.2<br>~~a~~|2.4<br>~~a~~|Ω<br>~~a~~|
## **Notes:**
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in[2] copper pad of FR4 board, on steady-state
4.Surface mounted on Min. copper pad of FR4 board, on steady-state
5.Guaranteed by design.
6.Starting Tj=25[o] C , VDD=30V , L=0.01mH , RG=25 Ω , VGS=10V
7.Tj=25[o] C. Expected voltage stress during 100% EAS test. Production datalog is not available.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**3**
**XP6932MT**
## **Channel-1**
**==> picture [416 x 171] intentionally omitted <==**
**----- Start of picture text -----**<br>
120 80<br>T C =25 [o] C 10V T C =150 [o] C 10V<br>7.0V 70 7.0V<br>6.0V 6.0V<br>90 5.0V 60 5.0V<br>V GS =4.0V V GS =4.0V<br>50<br>60 40<br>30<br>30 Ai) 20 pee<br>10<br>0 0<br>0 2 4 6 8 0 2 4 6 8<br>V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)<br> , Drain Current (A)ID , Drain Current (A)ID<br>**----- End of picture text -----**<br>
**Fig 1. Typical Output Characteristics**
**Fig 2. Typical Output Characteristics**
**==> picture [433 x 449] intentionally omitted <==**
**----- Start of picture text -----**<br>
12 2<br>I D =7A I D =14A<br>T C =25 [o] C V GS =10V<br>10<br>1.6<br>8 Payee FE<br>pA py 1.2 y<br>6<br>PK EE ie<br>0.8<br>4<br>2 pSPepe 0.4 pe~<br>2 4 6 8 10 -100 -50 0 50 100 150<br>V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance<br> v.s. Junction Temperature<br>20 2<br>I D =250uA<br>16 1.6<br>12 1.2<br>T j =150 [o] C T j =25 [o] C<br>8 PEPE HEISEEE 0.8 EE:<br>4 oT 0.4 [~<br>0 0<br>0 cept] 0.2 0.4 0.6 0.8 1 1.2 1.4 = -100 Ret -50 [eEEEEEE] 0 50 100 150<br>V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.<br> Reverse Diode Junction Temperature<br>) DS(ON)<br>Ω<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>
**4**
## **XP6932MT** ~~b~~ **Channel-1** ~~~ ieel~~
**==> picture [186 x 175] intentionally omitted <==**
**----- Start of picture text -----**<br>
12<br>I D =16A<br>10 V DS =15V<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25<br>Q G , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
**==> picture [196 x 181] intentionally omitted <==**
**----- Start of picture text -----**<br>
2000 f=1.0MHz<br>1600<br>1200 C iss<br>800<br>400 C oss<br>C rss<br>0<br>1 Pe 5 9 13 17 EEE 21 25 29 33 37<br>V DS ,Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>
**Fig 7. Gate Charge Characteristics**
**Fig 8. Typical Capacitance Characteristics**
**==> picture [418 x 391] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 ete 1 Se Duty factor = 0.5 ees<br>F uy THE eA<br>100 eee 0.2 ce mail<br>Operation in this area 0.1 0.1<br>limited by R ---- DS(ON) cee) open a 10us MOICC 0.05 ATMEL<br>10<br>sede TSOTSI 100us aren? 0.02 At<br>0.01 PDM<br>0.01 t<br>1 1ms Single Pulse T<br>10ms<br> T C =25 [o] C DC Duty factor = t/TPeak Tj = PDM x Rthjc + Tc<br>Single Pulse<br>0.1 0.001<br>0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1<br>V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s)<br> Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance<br>70 V DS =5V I 60<br>60<br>50<br>50 pf<br>40<br>40<br>30 Package Limited<br>30<br>20<br>20<br>T j =150 [o] C<br>10 FPERER, T j =25 [o] C 10 Foros<br>T j = -55 [o] C<br>0 0<br>0 PEE 1 2 AEE 3 4 5 ES 6 25 | | 50 | 75 100 tt 125 \ 150<br>V GS , Gate-to-Source Voltage (V) T C , Case Temperature ( [o] C )<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br> , Drain Current (A)ID , Drain Current (A)ID<br>**----- End of picture text -----**<br>
**Fig 9. Maximum Safe Operating Area**
**Fig 10. Effective Transient Thermal Impedance**
**Fig 11. Transfer Characteristics**
**Fig 12. Drain Current v.s. Case Temperature**
**5**
**XP6932MT**
## **Channel-1**
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2<br>I D =1mA<br>1.6<br>TT<br>1.2<br>0.8<br>0.4<br>0 PEER,<br>-100 -50 0 50 100 150<br>T j , Junction Temperature ( [o] C)<br> Fig 13. Normalized BVDSS v.s. JunctionDSS v.s. Junction v.s. Junction<br> Temperature<br>80<br>T j =25 [o] C<br>60<br>40<br>20<br>4.5V<br>V GS =10V<br>0<br>0 20 40 60 80 100 120 140<br>I D , Drain Current (A)<br>DSS<br>Normalized BV<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
**Fig 13. Normalized BVDSS v.s. JunctionDSS v.s. Junction v.s. Junction**
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2.4<br>2<br>1.6 ET<br>1.2<br>0.8<br>0.4<br>0 ESESSS<br>0 50 100 150<br>T A , Ambient Temperature( [o] C)<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>
**Fig 14. Total Power Dissipation**
**Fig 15. Typ. Drain-Source on State Resistance**
**6**
**XP6932MT**
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Channel-2<br>Mee<br>240 150<br>T C =25 [o] C 10V T C =150 [o] C 10V<br>7.0V 7.0V<br>200 Tr. 6.0V 120 I 6.0V<br>5.0V 5.0V<br>160 V GS =4.0V V GS =4.0V<br>90<br>120<br>60<br>80 Za<br>30<br>40<br>0 eee 0 Eee<br>0 2 4 6 0 2 4 6<br>V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)<br> , Drain Current (A) , Drain Current (A)<br>ID ID<br>**----- End of picture text -----**<br>
**Fig 1. Typical Output Characteristics**
**Fig 2. Typical Output Characteristics**
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8 2<br>I D =12A I D =20A<br>7 T C =25 [o] C V GS =10V<br>1.6<br>6<br>5<br>1.2<br>4<br>3<br>0.8<br>2<br>1 Bee 0.4 [eT<br>2 4 6 8 10 -100 -50 0 50 100 150<br>V GS , Gate-to-Source Voltage (V) T j , Junction Temperature (oC)<br> Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance<br> v.s. Junction Temperature<br>20 2<br>I D =250uA<br>16 1.6<br>T j =150 [[o]] T j =25 [[o]] C<br>12 1.2<br>8 at 0.8<br>4 0.4<br>0 Pew] 0 Eee<br>0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150<br>V SD SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.<br> Reverse Diode Junction Temperature<br>)<br>DS(ON)<br>Ω<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)ISISS<br>Normalized V<br>**----- End of picture text -----**<br>
**Fig 3. On-Resistance v.s. Gate Voltage**
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20 2<br>16 1.6<br>T j =150 [[o]] T j =25 [[o]] C<br>12 1.2<br>8 at 0.8<br>4 0.4<br>0 Pew] 0<br>0 0.2 0.4 0.6 0.8 1 1.2<br>V SD SD , Source-to-Drain Voltage (V)<br> Fig 5. Forward Characteristic of<br> Reverse Diode<br>GS(th)<br>(A)ISISS<br>Normalized V<br>**----- End of picture text -----**<br>
**7**
**XP6932MT**
## **Channel-2**
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12<br>I D =20A<br>10 V DS =15V<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50<br>Q G , Total Gate Charge (nC)<br> Fig 7. Gate Charge Characteristics<br>1000<br>100 Seat neti eC<br>Operation in this<br>area limited bRDS(ON) y ace 10us<br>eNO SE|<br>100us<br>10<br>PHimnmnnHIN NGA GER TEE<br>1ms<br>Pit boriiil ordi Piri<br>1 10ms<br> T C =25 [o] C [PGS DC<br>Single Pulse<br>0.1 StetCun euicetI pein IAT TINA vb an<br>0.01 0.1 1 10 100<br>V DS ,Drain-to-Source Voltage (V)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>(A)<br>ID<br>**----- End of picture text -----**<br>
**Fig 7. Gate Charge Characteristics**
**Fig 9. Maximum Safe Operating Area**
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150<br>V DS =5V<br>l<br>120<br>|<br>90<br>60<br>T j =150 [o] C<br>30<br>T j =25 [o] C<br>T j = -55 [o] C<br>0<br>0 2 4 6<br>V GS , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Fig 11. Transfer Characteristics**
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6000 f=1.0MHz<br>5000<br>4000<br>3000<br>C iss<br>2000<br>1000 HEiSssee C oss<br>C rss<br>0<br>1 Bee 5 9 13 17 PEE 21 25 29 33 37<br>V DS ,Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>
**Fig 8. Typical Capacitance Characteristics**
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1<br>Duty factor = 0.5<br>0.2<br>ae cE<br>| MEET 0.1 Fee 0.05 0.1<br>Seach 0.02 aaa Ste<br>0.01 PDM<br>0.01 Single Pulse a | el t T co<br>Duty factor = t/T<br>Peak Tj = PDM x Rthjc + Tc<br>0.001 PT ConTI TE APT P T h] mi l<br>0.000001 PLT 0.00001 IM 0.0001 LITE 0.001 0.01 0.1 ll 1<br>t , Pulse Width (s)<br>)thjc<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
**Fig 10. Effective Transient Thermal Impedance**
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120<br>100<br>~ ~<br>80<br>60<br>Package Limited<br>40<br>20<br>0<br>25 50 75 100 125 150<br>T C , Case Temperature ( [o] C )<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Fig 12. Drain Current v.s. Case Temperature**
**8**
**XP6932MT**
## **Channel-2**
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2<br>I D =1mA<br>1.6 ptf of<br>1.2<br>pate<br>0.8<br>0.4<br>0 He<br>-100 -50 0 50 100 150<br>T j , Junction Temperature ( [[o]] C)<br> Fig 13. Normalized BVDSS v.s. JunctionDSS v.s. Junction v.s. Junction<br> Temperature<br>30<br>T j =25 [o] C<br>24<br>18<br>12<br>6 4.5V<br>V GS =10V<br>0<br>0 20 40 60 80 100 120 140<br>I D , Drain Current (A)<br>DSS<br>Normalized BV<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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2.4<br>2<br>pf<br>1.6<br>pate 1.2 P XN<br>0.8<br>0.4<br>0 ESS<br>100 150 0 50 100 150<br>[[o]] C) T A , Ambient Temperature( [o] C)<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>
**Fig 13. Normalized BVDSS v.s. JunctionDSS v.s. Junction v.s. Junction Temperature**
**Fig 14. Total Power Dissipation**
**Fig 15. Typ. Drain-Source on State Resistance**
**9**
**XP6932MT**
## **MARKING INFORMATION**
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Part Number<br>6932<br>YWWSSS<br>Date Code (YWWSSS)<br> Y ： Last Digit Of The Year<br> WW ： Week<br> SSS ： Sequence<br>**----- End of picture text -----**<br>
**10**
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YAGEO<br>Packa e Outline : PMPAK 5x6<br>g<br>D1<br>D2<br>H<br>i<br>SYMBOLS Millimeters<br>MIN NOM MAX<br>E2 A 0.90 1.10 1.30<br>E1 E b 0.33 0.41 0.51<br>C 0.254(Ref.)<br>mail == D1 4.80 4.90 5.10<br>D2 3.61 4.00 4.40<br>K<br>E 5.80 6.03 6.25<br>L 1 E1 (Ref.) 5.60 5.75 5.90<br>a E2 (Ref.) 3.30 3.55 3.80<br>e b L1<br>e 1.27 BSC<br>BACKSIDE VIEW<br>H 0.35 － 0.90<br>K (Ref.) 1.00 1.275 －<br>α( Reference) L 0.35 0.55 0.75<br>L1 0.06 0.13 0.20<br>α( Ref.) 0° － 12°<br>A .<br>C<br>**----- End of picture text -----**<br>
1.All dimension are in millimeters.
2.Dimension does not include burrs and mold flash/protrusions.
- 3.The outline schematic is not to scale and slightly different from the actual product appearance.
Draw No. M1-MT-8-EIFMRL-G-v08
## **PMPAK 5x6 (E-TYPE)**
## **PMPAK 5X6(E-TYPE) FOOTPRINT** ：
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. |<br>**----- End of picture text -----**<br>
Draw No. M1-MT-8-EIFMRL-G-v08
Updated at June 9, 2026
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