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XP65SA074FWL
MOS N 650V 74MOHM TO-247
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: YAGEO XSEMI
- Product type: Single MOSFETs
- SVHC: No SVHC (23-Jan-2024)
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 2.35 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**XP65SA074FWL**
## ~~Po~~ **Halogen-Free Product**
## _**N-CHANNEL ENHANCEMENT MODE POWER MOSFET**_
- **100% Rg & UIS Test**
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D<br>G<br>S<br>**----- End of picture text -----**<br>
- **Ultra-Fast Body Diode**
- **Simple Drive Requirement**
- **RoHS Compliant & Halogen-Free**
## **Description**
XP65SA074F series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-247 package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.
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BVDSS 650V<br>R 74m Ω<br>DS(ON)<br>ID 37.5A<br>S<br>TO-247 (WL) D<br>G<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a~~<br>~~a~~|Parameter|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~<br>~~ne~~|Drain-Source Voltage|650|V|
|VGS<br>~~a~~<br>~~ne~~|Gate-Source Voltage|+<br>20|V|
|VGS<br>~~ne~~<br>~~a~~|Gate-Source Voltage, AC(f > 1Hz)|+<br>30|V|
|ID@TC=25℃<br>~~a~~<br>~~ns~~<br>~~ns~~|Drain Current, VGS @10V|37.5|A|
|ID@TC=100℃<br>~~ns~~<br>~~ns~~<br>~~ns~~|Drain Current, VGS @10V|23.7|A|
|IDM<br>~~ns~~<br>~~ns~~<br>~~ns~~|Pulsed Drain Current1|110|A|
|dv/dt<br>~~ns~~<br>~~ns~~<br>~~ns~~|MOSFET dv/dt Ruggedness(VDS= 0 …480V)|40|V/ns|
|PD@TC=25℃<br>~~ns~~<br>~~ns~~<br>~~ns~~|Total Power Dissipation|277.7|W|
|PD@TA=25℃<br>~~ns~~<br>~~ns~~<br>~~ns~~|Total Power Dissipation|3.12|W|
|EAS<br>~~ns~~<br>~~ns~~|Single Pulse Avalanche Energy3|512|mJ|
|dv/dt<br>~~ns~~<br>~~a~~<br>~~ns~~|Peak Diode Recoverydv/dt4|15|V/ns|
|TSTG<br>~~ns~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~ns~~<br>~~a~~|OperatingJunction Temperature Range|-55 to 150|℃|
## **Thermal Data**
|Symbol|Parameter|Value|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|0.45|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient|40|℃/W|
**1**
**202311291YAGEO**
**XP65SA074FWL**
## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a~~|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~<br>~~es~~|VGS=0V, ID=250uA<br>~~a~~<br>~~GG~~|650<br>~~a~~<br>~~GG~~|-<br>~~a~~<br>~~GG~~|-<br>~~a~~|V<br>~~a~~|
|RDS(ON)<br>~~a~~<br>~~a~~|Static Drain-Source On-Resistance2<br>~~es~~<br>~~es~~|VGS=10V, ID=18A<br>~~GG~~|-<br>~~GG~~|-<br>~~GG~~|74|mΩ|
|VGS(th)<br>~~a~~<br>~~a~~<br>~~**a**~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~es~~|VDS=VGS, ID=250uA<br>~~GG~~<br>~~GG~~|2<br>~~GG~~<br>~~GG~~|-<br>~~GG~~<br>~~GG~~|5|V|
|gfs<br>~~a~~<br>~~**a**~~|Forward Transconductance<br>~~es~~<br>~~es~~|VDS=10V, ID=18A<br>~~GG~~|-<br>~~GG~~|28<br>~~GG~~|-|S|
|IDSS<br>~~**a**~~|Drain-Source Leakage Current<br>~~es~~<br>~~a~~|VDS=520V, VGS=0V<br>~~GG~~<br>~~a~~|-<br>~~GG~~<br>~~a~~|-<br>~~GG~~<br>~~a~~|100<br>~~a~~|uA<br>~~a~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~a~~<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|+<br>1<br>~~a~~<br>~~a~~|uA<br>~~a~~<br>~~a~~|
|Qg<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~a~~|ID=18A<br>VDS=520V<br>VGS=10V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~se~~<br>~~es~~|127<br>~~a~~<br>~~a~~<br>~~se~~|203<br>~~a~~<br>~~a~~<br>~~se~~|nC<br>~~a~~<br>~~a~~<br>~~se~~|
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~es~~<br>~~es~~|33|-|nC|
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|59|-|nC|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDD=325V<br>ID=18A<br>RG=3.3Ω<br>VGS=10V|-<br>~~es~~<br>~~es~~<br>~~es~~|28|-|ns|
|tr<br>~~a~~<br>~~a~~<br>~~**a**~~|Rise Time||-<br>~~es~~<br>~~es~~<br>~~es~~|46<br>|-<br>|ns<br>|
|td(off)<br>~~a~~<br>~~**a**~~|Turn-off DelayTime||-<br>~~es~~<br>~~es~~|86<br>|-<br>|ns<br>|
|tf<br>~~**a**~~|Fall Time||-<br>~~esa~~|35<br>~~a~~|-<br>~~a~~|ns<br>~~a~~|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>~~a~~|VGS=0V<br>VDS=100V<br>f=1.0MHz<br>~~a~~|-<br>~~a~~<br>~~i~~<br>~~es~~|4900<br>~~a~~|7840<br>~~a~~|pF<br>~~a~~|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance||-<br>~~es~~<br>~~es~~|140|-|pF|
|Crss<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance||-<br>~~es~~<br>~~es~~|16|-|pF|
|Rg<br>~~a~~<br>~~a~~|Gate Resistance|f=1.0MHz|-<br>~~es~~|2|4|Ω|
## **Notes:**
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Starting Tj=25[o] C , VDD=90V , L=100mH , RG=25 Ω , VGS=10V
4.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25[o] C
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**2**
**XP65SA074FWL**
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120 60<br>10V<br>T C =25 [o] C 10V T C =150 [o] C 9.0V<br>100 9.0V 50 8.0V<br>8.0V<br>7.0V<br>80 fF 40 fo 0.37 Ω<br>| | V G =6.0V<br>60 Pfam] 7.0V 30 Raye<br>40 fF 20<br>| |<br>20 faReRE V G =6.0V 10 fo<br>RE PAREEEEEEEEE<br>0 fp—— 0<br>0 8 16 24 32 0 4 8 12 16 20 24<br>V DS , Drain-to-Source Voltage (V) | ] fF V DS , Drain-to-Source Voltage (V)<br> Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>84 4<br>I D =18A I D =18A<br>80 T C =25 [o] C V G =10V<br>3<br>76<br>72<br>eS 2<br>68<br>pee [eet] y<br>64<br>1<br>60<br>ee a<br>56 0<br>4 5 6 7 8 9 10 -100 -50 0 50 100 150<br>eee V GS Gate-to-Source Voltage (V) Let T j , Junction Temperature ( ET [o] C )<br> Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance<br> v.s. Junction Temperature<br>20 2<br>I D =250uA<br>16 1.6<br>12 1.2<br>8 Tm T j = 150 [o] C T j = 25 [o] C 0.8<br>4 0.4<br>0 Te) 0 |e<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150<br>prey et<br>V SD (V) T j , Junction Temperature ( [o] C )<br> , Drain Current (A)ID , Drain Current (A)ID<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br> (A)IS<br>Normalized V<br>**----- End of picture text -----**<br>
**Fig 1. Typical Output Characteristics**
**Fig 3. On-Resistance v.s. Gate Voltage**
**Fig 5. Forward Characteristic of Reverse Diode**
**Fig 6. Gate Threshold Voltage v.s. Junction Temperature**
**3**
**XP65SA074FWL**
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12 100000 f=1.0MHz<br>I D =18A<br>10 V DS =520V<br>10000<br>See eee C iss<br>8 0.37 Ω<br>1000<br>{ eee<br>6<br>100 C oss<br>4<br>C rss<br>10 |a<br>2<br>0 1<br>0 40 80 120 160 0 bese 200 cecee 400 cece 600 ecces 800<br>Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
**Fig 7. Gate Charge Characteristics**
**Fig 8. Typical Capacitance Characteristics**
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1000<br>100<br>Senne Operation in this area raGsr Pee<br>limited by RDS(ON)<br>10 a _ 4 a 4 — \ oN NS |. SS 100us10us 4<br>1<br>ie en eed ee eeee 1ms<br>0.1 T C =25 [o] C Ne ee) 100ms 10ms (a<br>Single Pulse DC<br>0.01<br>1 10 100 1000<br>V DS , Drain-to-Source Voltage (V)<br>(A)<br>ID<br>**----- End of picture text -----**<br>
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1<br>Duty factor=0.5<br>Sheetieeecre at SREa<br>0.2<br>m2 -d<br>0.1 0.1<br>f Zao) MO<br>0.05 P DM<br>t<br>T<br>0.02<br>0.01 Vf, Duty factor = t/T Peak Tj ae = PDM x Rthjc + TC<br>Single Pulse<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Pulse Width (s)<br>)thjc<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
**Fig 9. Maximum Safe Operating Area**
**Fig10. Effective Transient Thermal Impedance**
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VDS<br>90%<br>10%<br>VGS<br>td(on) [t] r td(off) tf<br>**----- End of picture text -----**<br>
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VG<br>QG<br>10V<br>QGS QGD<br>Charge Q<br>**----- End of picture text -----**<br>
**Fig 11. Switching Time Waveform**
**Fig 12. Gate Charge Waveform**
**4**
**XP65SA074FWL**
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400 320<br>T j =25 [o] C<br>300 240<br>pebere rey } EXP<br>200 160 PN<br>100 V GS =10V 80<br>pope Ne<br>0 0 pS<br>0 20 40 60 80 0 50 100 150<br>I D , Drain Current (A) T C , Case Temperature( [o] C)<br>Ω )<br>(m<br>DS(ON)<br>R<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>
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Fig 13. Typ. Drain-Source on State<br> Resistance<br>**----- End of picture text -----**<br>
**Fig 14. Total Power Dissipation**
**5**
**XP65SA074FWL**
## ~~) lta~~ **MARKING INFORMATION**
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Part Number<br>65SA074F<br>YWWSSS<br>Date Code (YWWSSS)<br> Y ： Last Digit Of The Year<br> WW ： Week<br> SSS ： Sequence<br>**----- End of picture text -----**<br>
**6**
## **Package Outline : TO-247**
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|||||||||
|---|---|---|---|---|---|---|---|
|E|A|
|Millimeters|
|E1|A|SYMBOLS|
|2|MIN|NOM|MAX|
|-|=|eo|
|>|_|[oH]|Tl|—_-|———|
|A|4.80|5.03|5.25|
|S|
|A2|1.90|2.05|2.20|
|Awe|IF|ee|ee|
|E2|E|15.75|15.95|16.15|
|Lies|Itt|es|ee|
|φ1|φ|E1|13.00|13.60|14.20|
|D|D1|E2|3.60|4.35|5.10|
|D|20.80|20.95|21.10|
|D1|16.20|16.95|17.70|
|C|0.50|0.60|0.70|
|L|19.80|20.10|20.40|
|ee|ee|
|L1|4.10|4.25|4.40|
|F|2.80|3.10|3.40|
|L|
|PTT|TTT|ee|b|ee|1.05|1.20|1.35|
|1|
|$l|ee|ee|a|
|b1|1.90|2.18|2.45|
|e|5.44 ref.|
|φ|3.50|3.58|3.65|
|L|
|F|φ1|7.18 ref.|
|b1|
|S|6.00|6.15|6.30|
|rye|ee|
|b|.|
|C|
|||||ee|
|e|
|1.All Dimensions Are in Millimeters.|
|2.Dimension Does Not Include Mold Protrusions.|
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Draw No. M1-WL3-G-v02
**TO-247**
## **TO-247 FOOTPRINT** ：
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5.44mm 5.44mm<br>2.0mm<br>.<br>1.4mm<br>**----- End of picture text -----**<br>
Draw No. M1-WL3-G-v02
1
Updated at June 9, 2026
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