XP60SC380DH

**XP60SC380DH Halogen-Free Product** _**N-CHANNEL ENHANCEMENT MODE POWER MOSFET**_ [ 

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D BVDSS 600V<br>R 0.38 Ω<br>DS(ON)<br>3<br>ID 10A<br>G<br>S<br>silicon process<br>and fast G D<br>with an extreme S TO-252(H)<br>**----- End of picture text -----**<br>


- **100% Rg & UIS Test** 

- **Low trr / Qrr** 

- **Simple Drive Requirement** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP60SC380D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~ee~~<br>~~es~~<br>~~es~~|Parameter<br>~~nn~~<br>~~Re~~<br>|Rating<br>~~nn~~<br>~~(ee~~<br>~~Gt~~|Units<br>~~nn~~<br>~~Ge~~|
|---|---|---|---|
|VDS<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~|Drain-Source Voltage<br>~~nn~~<br>~~Re~~<br>~~Re~~<br>|600<br>~~nn~~<br>~~(ee~~<br>~~Gt~~<br>~~Ge~~|V<br>~~nn~~<br>~~Ge~~|
|VGS<br>~~es~~<br>~~es~~<br>~~es~~|Gate-Source Voltage<br>~~Re~~<br>~~Re~~<br>|+<br>20<br>~~(ee~~<br>~~Gt~~<br>~~Ge~~|V<br>~~Ge~~|
|VGS<br><br>~~es~~<br>~~es~~<br>~~es~~|Gate-Source Voltage, AC(f > 1Hz)<br>~~Re~~<br>~~Re~~<br>~~Re~~<br>|+<br>30<br>~~Gt~~<br>~~Ge~~<br>~~Ge~~<br>|V<br>|
|ID@TC=25℃<br><br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|Drain Current, VGS @10V3<br>~~Re~~<br>~~Re~~<br>~~ee~~<br><br>|10<br>~~Ge~~<br>~~Ge~~<br>~~ee~~<br>~~GO~~<br><br>~~GO~~<br>|A<br>~~ee~~<br><br>|
|ID@TC=100℃<br><br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|Drain Current, VGS @10V3<br>~~Re~~<br><br>~~ee~~<br><br>|6.5<br>~~Ge~~<br><br>~~GO~~<br>~~ee~~<br>~~GO~~<br><br>~~GO~~<br>|A<br><br>~~ee~~<br><br>|
|IDM<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|Pulsed Drain Current1<br><br>~~ee~~<br><br>|22<br>~~GO~~<br><br>~~GO~~<br>~~ee~~<br>~~GO~~<br><br>~~GO~~<br>|A<br><br>~~ee~~<br><br>|
|dv/dt<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|MOSFET dv/dt Ruggedness(VDS= 0 …480V)<br><br>~~ee~~<br><br>|40<br>~~GO~~<br><br>~~GO~~<br>~~ee~~<br>~~GO~~<br><br>~~GO~~<br>|V/ns<br><br>~~ee~~<br><br>|
|PD@TC=25℃<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|Total Power Dissipation<br><br>~~ee~~<br><br>|69.4<br>~~GO~~<br><br>~~GO~~<br>~~ee~~<br>~~GO~~<br><br>~~GO~~<br>|W<br><br>~~ee~~<br><br>|
|PD@TA=25℃<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|Total Power Dissipation6<br><br>~~ee~~<br><br>|2<br>~~GO~~<br><br>~~GO~~<br>~~ee~~<br>~~GO~~<br><br>~~GO~~<br>|W<br><br>~~ee~~<br><br>|
|EAS<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|Single Pulse Avalanche Energy4<br><br>~~ee~~<br><br>|50<br>~~GO~~<br><br>~~GO~~<br>~~ee~~<br>~~GO~~<br><br>~~GO~~<br>|mJ<br><br>~~ee~~<br><br>|
|dv/dt<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|Peak Diode Recoverydv/dt5<br><br>~~ee~~<br><br>|15<br>~~GO~~<br><br>~~GO~~<br>~~ee~~<br>~~GO~~<br><br>~~**G**O~~<br>|V/ns<br><br>~~ee~~<br><br>|
|TSTG<br>~~es~~<br>~~es~~<br>~~es~~|Storage Temperature Range<br><br>~~ee~~<br>|-55 to 150<br>~~GO~~<br><br>~~GO~~<br>~~ee~~<br>~~**G**O~~<br><br>~~t~~|℃<br><br>~~ee~~<br>|
|TJ<br>~~es~~<br>~~es~~|OperatingJunction Temperature Range<br><br>~~es~~|-55 to 150<br>~~GO~~<br><br>~~**G**O~~<br>~~es~~<br>~~t~~|℃<br><br>~~es~~|



## **Thermal Data** 

|Symbol|Parameter|Value|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|1.8|℃/W|
|Rthj-a|Maximum Thermal Resistance, Junction-ambient(PCB mount)6|62.5|℃/W|



**1** 

**202311291YAGEO** 

**XP60SC380DH** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~<br>~~es~~|VGS=0V, ID=1mA<br>~~a~~<br>~~GG~~|600<br>~~a~~<br>~~GG~~|-<br>~~a~~<br>~~GG~~|-<br>~~a~~|V<br>~~a~~|
|RDS(ON)<br>~~a~~<br>~~a~~|Static Drain-Source On-Resistance2<br>~~es~~<br>~~es~~|VGS=10V, ID=2.8A<br>~~GG~~|-<br>~~GG~~|-<br>~~GG~~|0.38|Ω|
|VGS(th)<br>~~a~~<br>~~a~~<br>~~**a**~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~es~~|VDS=VGS, ID=250uA<br>~~GG~~|2.5<br>~~GG~~|-<br>~~GG~~|4.5|V|
|gfs<br>~~a~~<br>~~**a**~~|Forward Transconductance<br>~~es~~<br>~~es~~|VDS=10V, ID=5A|-|5|-|S|
|IDSS<br>~~**a**~~|Drain-Source Leakage Current<br>~~es~~<br>~~a~~|VDS=480V, VGS=0V<br>~~a~~|-<br>~~a~~|-<br>~~a~~|100<br>~~a~~|uA<br>~~a~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~a~~<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|+<br>1<br>~~a~~<br>~~a~~|uA<br>~~a~~<br>~~a~~|
|Qg<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge7<br>~~a~~<br>~~a~~|ID=2.8A<br>VDS=480V<br>VGS=10V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~se~~<br>~~es~~|18<br>~~a~~<br>~~a~~<br>~~se~~|28.8<br>~~a~~<br>~~a~~<br>~~se~~|nC<br>~~a~~<br>~~a~~<br>~~se~~|
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge7||-<br>~~es~~<br>~~es~~|5|-|nC|
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge7||-<br>~~es~~<br>~~es~~<br>~~es~~|9|-|nC|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime7|VDD=300V<br>ID=2.8A<br>RG=3.3Ω<br>VGS=10V|-<br>~~es~~<br>~~es~~<br>~~es~~|12|-|ns|
|tr<br>~~a~~<br>~~a~~<br>~~a~~|Rise Time7||-<br>~~es~~<br>~~es~~<br>~~es~~|10|-|ns|
|td(off)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime7||-<br>~~es~~<br>~~es~~<br>~~es~~|35|-|ns|
|tf<br>~~a~~<br>~~a~~<br>~~a~~|Fall Time7||-<br>~~es~~<br>~~es~~<br>~~es~~|13|-|ns|
|Ciss<br>~~a~~<br>~~a~~<br>~~a~~|Input Capacitance7|VGS=0V<br>VDS=100V<br>f=1.0MHz|-<br>~~es~~<br>~~es~~<br>~~es~~|635|1016|pF|
|Coss<br>~~a~~<br>~~a~~<br>~~a~~|Output Capacitance7||-<br>~~es~~<br>~~es~~<br>~~es~~|35|-|pF|
|Crss<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance7||-<br>~~es~~<br>~~es~~|10|-|pF|
|Rg<br>~~a~~<br>~~a~~|Gate Resistance|f=1.0MHz|-<br>~~es~~|5|10|Ω|



## **Notes:** 

## 1.Pulse width limited by max. junction temperature. 

## 2.Pulse test 

3.Limited by max. junction temperature. Maximum duty cycle D=0.75 

4.Starting Tj=25[o] C , VDD=90V , L=100mH , RG=25 Ω , VGS=10V 

5.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25[o] C 

- 6.Surface mounted on 1 in[2] copper pad of FR4 board 

- 7.Guaranteed by design. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP60SC380DH** 

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20 12<br>T C =25 [o] C 9.0V10V T C =150 [o] C 9.0V10V<br>10<br>16 8.0V 8.0V<br>7.0V<br>7.0V 8 fo 0.37 Ω<br>12<br>6<br>8 V GS =6.0V<br>4<br>PATE V  GS =6.0V |  GAREESEE<br>4<br>2<br>0 0 pee<br>0 4 8 12 16 20 24 0 8 16 24 32<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>440 4<br>I D =2.8A I D =2.8A<br>T C =25 [o] C V GS  =10V<br>410 3<br>7 fe<br>380 2<br>350 ARE 1<br>320 0<br>5 ee) 6 7 8 9 10 |  GET -100 -50 0 50 100 150<br>V GS  Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C )<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>           v.s. Junction Temperature<br>10 2<br>I D =250uA D =250uA =250uA<br>8 1.6<br>6 1.2<br>4 T j  = 150 [o] C T j  = 25 [o] C 0.8<br>2 0.4<br>0 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150<br>V SD  (V) T j  , Junction Temperature (  [[o]] C )<br> , Drain Current (A)ID  , Drain Current (A)ID<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br> (A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


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2<br>I D =250uA D =250uA =250uA<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>-100 -50 0 50 100 150<br>T j  , Junction Temperature (  [[o]] C )<br>GS(th)<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 5. Forward Characteristic of Reverse Diode** 

**Fig 6. Gate Threshold Voltage v.s. Junction Temperature** 

**3** 

**XP60SC380DH** 

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12<br>I D =5A<br>10 V DS =480V<br>8<br>6<br>4<br>fo<br>2<br>0<br>0 Py 10 20 30<br>Q G  , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

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100<br>10<br>Operation in this area<br>eee limited by RDS(ON) ASSISseceeeeeeer|ONY<br>10us<br>1 serena<br>100us<br>SCSE S|<br>0.1 ceresate Ware<br>1ms<br>10ms<br>0.01 DC<br>T C =25 [o] C<br>Single Pulse<br>0.001 eae<br>1 10 100 1000<br>V DS  , Drain-to-Source Voltage (V)<br>              Fig 9. Maximum Safe Operating Area<br>VDS<br>90%<br>10%<br>VGS<br>td(on) [t] r td(off) tf<br>(A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area** 

**Fig 11. Switching Time Waveform** 

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f=1.0MHz<br>5000<br>4000<br>0.37 Ω<br>3000<br>2000<br>1000 oe<br>C iss<br>C oss<br>0 C rss<br>0 {teas 200 400 ae 600 800<br>V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>


**Fig 8. Typical Capacitance Characteristics** 

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1<br>Duty factor=0.5<br>Shoes seca a<br>ei<br>0.2<br>a<br>0.1 0.1<br>ata aunt a<br>Sieg 0.05  DEICININmeet iretaeeeeeaaat P DM<br>t<br>T<br>0.02<br>Duty factor = t/T<br>0.01 Peak T j  = P DM  x R thjc  + T C<br>Single Pulse<br>0.01 b<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Pulse Width (s)<br>)thjc<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig10. Effective Transient Thermal Impedance** 

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VG<br>QG<br>10V<br>QGS QGD<br>Charge Q<br>**----- End of picture text -----**<br>


**Fig 12. Gate Charge Waveform** 

**4** 

**XP60SC380DH** 

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2000 80<br>T j =25 [o] C<br>1600<br>Sooo 60 feoenee<br>1200<br>40<br>800<br>V GS =10V 20<br>400<br>0 eet]S| 0 E OEIISE<br>0 4 8 12 16 0 50 100 150<br>I D  , Drain Current (A) T C , Case Temperature( [o] C)<br>              Fig 13. Typ. Drain-Source on State               Fig 14. Total Power Dissipation<br>            Resistance<br>Ω )<br>(m<br>DS(ON)<br>R<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**5** 

**XP60SC380DH** 

## **MARKING INFORMATION** 

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Part Number<br>60SC380D<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

## **Package Outline : TO-252** 

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Millimeters<br>SYMBOLS<br>MIN NOM MAX<br>D<br>A2 2.18 2.30 2.40<br>rr<br>A3 0.40 0.50 0.65<br>D1<br>— —|)| eeee ee<br>B 0.40 0.70 1.00<br>= E2 Sy B1 0.50 0.85 1.20<br>D 6.00 6.50 6.80<br>D1 4.80 5.35 5.90<br>mai ne E3 —— E3 4.00 (ref.)<br>E1<br>F 2.00 2.63 3.05<br>F1 0.50 0.85 1.20<br>E1 5.00 5.70 6.30<br>E2 0.50 1.10 1.80<br>F1 e 2.3 (ref)<br>C 0.35 0.525 0.70<br>B1<br>F<br>B2 A1 0.00 － 0.25<br>B<br>B2 － － 1.25<br>a e e SEE L 0.90 1.34 1.78<br>.<br>_<br>A2<br>Ved uP C<br>| A1 f okt<br>A3 L<br>|<br>1.All Dimensions Are in Millimeters.<br>**----- End of picture text -----**<br>


2.Dimension Does Not Include Mold Protrusions. 

3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. 

Draw No.  M1-H3EFIMT-G-v10 

**TO-252** 

## **TO-252 FOOTPRINT** ： 

## . rT 

Draw No. M1-H3EFIMT-G-v10