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XP60SA380DIT
MOS N 600V 380MOHM TO-220CFM-T
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: YAGEO XSEMI
- Product type: Single MOSFETs
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.489 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**XP60SA380DIT**
## ~~[fo~~ **Halogen-Free Product**
## _**N-CHANNEL ENHANCEMENT MODE**_
## _**POWER MOSFET**_
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D BVDSS 600V<br>R 0.38 Ω<br>DS(ON)<br>3,4<br>ID 10A<br>G<br>S<br>silicon process<br>and fast<br>with an extreme G<br>D S TO-220CFM-T(IT)<br>**----- End of picture text -----**<br>
- **100% Rg & UIS Test**
- **Low trr / Qrr**
- **Simple Drive Requirement**
- **RoHS Compliant & Halogen-Free**
## **Description**
XP60SA380D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a ~~|Parameter<br> ~~ee~~|Rating<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage|600|V|
|VGS<br>~~a~~|Gate-Source Voltage|+<br>20|V|
|VGS<br>~~a~~<br>~~a~~|Gate-Source Voltage, AC(f > 1Hz)|+<br>30|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS @10V3,4|10|A|
|ID@TC=100℃<br>~~a~~|Drain Current, VGS @10V3,4|6.5|A|
|IDM<br>~~a~~|Pulsed Drain Current1|22|A|
|dv/dt<br>~~a~~|MOSFET dv/dt Ruggedness(VDS= 0 …480V)|40|V/ns|
|PD@TC=25℃<br>~~a~~|Total Power Dissipation|31.2|W|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation|1.92|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy5|50|mJ|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt6|15|V/ns|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a~~|OperatingJunction Temperature Range|-55 to 150|℃|
## **Thermal Data**
|Symbol|Parameter|Value|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|4|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient|65|℃/W|
**1**
**202311291YAGEO**
**XP60SA380DIT**
## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a~~|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~<br>~~es~~|VGS=0V, ID=250uA<br>~~a~~<br>~~GG~~|600<br>~~a~~<br>~~GG~~|-<br>~~a~~<br>~~GG~~|-<br>~~a~~|V<br>~~a~~|
|RDS(ON)<br>~~a~~<br>~~a~~|Static Drain-Source On-Resistance2<br>~~es~~<br>~~es~~|VGS=10V, ID=3.2A<br>~~GG~~|-<br>~~GG~~|-<br>~~GG~~|0.38|Ω|
|VGS(th)<br>~~a~~<br>~~a~~<br>~~**a**~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~es~~|VDS=VGS, ID=250uA<br>~~GG~~|2<br>~~GG~~|-<br>~~GG~~|4|V|
|gfs<br>~~a~~<br>~~**a**~~|Forward Transconductance<br>~~es~~<br>~~es~~|VDS=15V, ID=5A|-|5|-|S|
|IDSS<br>~~**a**~~|Drain-Source Leakage Current<br>~~es~~<br>~~a~~|VDS=480V, VGS=0V<br>~~a~~|-<br>~~a~~|-<br>~~a~~|100<br>~~a~~|uA<br>~~a~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~a~~<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|+<br>1<br>~~a~~<br>~~a~~|uA<br>~~a~~<br>~~a~~|
|Qg<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~a~~|ID=5A<br>VDS=480V<br>VGS=10V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~se~~<br>~~es~~|22.5<br>~~a~~<br>~~a~~<br>~~se~~|36<br>~~a~~<br>~~a~~<br>~~se~~|nC<br>~~a~~<br>~~a~~<br>~~se~~|
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~es~~<br>~~es~~|5.5|-|nC|
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|11|-|nC|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDD=300V<br>ID=5A<br>RG=3.3Ω<br>VGS=10V|-<br>~~es~~<br>~~es~~<br>~~es~~|12|-|ns|
|tr<br>~~a~~<br>~~a~~<br>~~a~~|Rise Time||-<br>~~es~~<br>~~es~~<br>~~es~~|11|-|ns|
|td(off)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime||-<br>~~es~~<br>~~es~~<br>~~es~~|26|-|ns|
|tf<br>~~a~~<br>~~a~~<br>~~a~~|Fall Time||-<br>~~es~~<br>~~es~~<br>~~es~~|8|-|ns|
|Ciss<br>~~a~~<br>~~a~~<br>~~a~~|Input Capacitance|VGS=0V<br>VDS=100V<br>f=1.0MHz|-<br>~~es~~<br>~~es~~<br>~~es~~|760|1216|pF|
|Coss<br>~~a~~<br>~~a~~<br>~~a~~|Output Capacitance||-<br>~~es~~<br>~~es~~<br>~~es~~|34|-|pF|
|Crss<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance||-<br>~~es~~<br>~~es~~|6|-|pF|
|Rg<br>~~a~~<br>~~a~~|Gate Resistance|f=1.0MHz|-<br>~~es~~|3.3|6.6|Ω|
## **Notes:**
## 1.Pulse width limited by max. junction temperature.
## 2.Pulse test
3.Limited by max. junction temperature. Maximum duty cycle D=0.75
4.Ensure that the junction temperature does not exceed TJmax..
5.Starting Tj=25[o] C , VDD=90V , L=100mH , RG=25 Ω , VGS=10V
6.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25[o] C
## THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**2**
**XP60SA380DIT**
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20 12<br>T C =25 [o] C 9.0V10V T C =150 [o] C 9.0V10V<br>10<br>16 8.0V 8.0V<br>7.0V<br>12 8 0.37 Ω V G =6.0V<br>7.0V<br>6<br>8<br>fa-| 4 Fe<br>V G =6.0V<br>4<br>2<br>0 0 (oer<br>0 4 8 12 16 20 24 0 8 16 24 32<br>V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)<br> , Drain Current (A)ID , Drain Current (A)ID<br>**----- End of picture text -----**<br>
**Fig 1. Typical Output Characteristics**
## **Fig 2. Typical Output Characteristics**
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440<br>I D =3.2A<br>420 T C =25 [o] C<br>|<br>400<br>380<br>360<br>340<br>320<br>5 6 7 8 9 10<br>V GS Gate-to-Source Voltage (V)<br>Ω )<br> (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
**Fig 3. On-Resistance v.s. Gate Voltage**
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5<br>4<br>3 FART)<br>2 T j = 150 [o] C T j = 25 [o] C<br>1<br>0 AGE)peEeAD<br>0 0.2 0.4 0.6 0.8 1 1.2<br>ES be<br>V SD (V)<br> (A)IS<br>**----- End of picture text -----**<br>
**Fig 5. Forward Characteristic of Reverse Diode**
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4<br>I D =3.2A<br>V G =10V<br>3 LETS<br>2<br>ee eee<br>1<br>0 an<br>-100 -50 0 50 100 150<br>T j , Junction Temperature ( [o] C )<br> Fig 4. Normalized On-Resistance<br> v.s. Junction Temperature<br>2<br>I D =250uA<br>1.6<br>1.2 EEE<br>0.8<br>0.4<br>0 GEPRS<br>-100 -50 0 50 100 150<br>T j , Junction Temperature ( [o] C )<br>DS(ON)<br>Normalized R<br>GS(th)<br>Normalized V<br>**----- End of picture text -----**<br>
**Fig 4. Normalized On-Resistance v.s. Junction Temperature**
**Fig 6. Gate Threshold Voltage v.s. Junction Temperature**
**3**
**XP60SA380DIT**
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f=1.0MHz<br>10000<br>1000 C iss<br>0.37 Ω<br>100<br>C oss<br>10 C rss<br>1 eee<br>0 200 400 600 800<br>V DS , Drain-to-Source Voltage (V)<br> Fig 8. Typical Capacitance Characteristics<br>1<br>Duty factor=0.5<br>0.2<br>0.1 0.1<br>0.05<br>= BEPgh EE ee<br>SMe’ 0.010.02 cianSHH PDM IBH<br>0.01 Single Pulse t<br>T<br>ECE<br>Duty factor = t/T<br>Peak T j = P DM x R thjc + T C<br>PEEP |<br>0.001 rT TEDTOwe<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t , Pulse Width (s)<br>C (pF)<br>)thjcthjc<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
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12 10000<br>I D =5A<br>10 V DS =480V<br>/ 1000<br>8<br>6 a, 100<br>4<br>10<br>2<br>0 Fo] 1<br>0 10 20 30<br>Q G , Total Gate Charge (nC)<br> Fig 7. Gate Charge Characteristics<br>100 1<br>10<br>Operation in this area<br>limited by RDS(ON)<br>0.1<br>1<br>e7eeeNN NN ™. 10us =<br>100us<br>0.1 TESTES<br>1ms 0.01<br>10ms<br>0.01 sore tot esteetin Weocca lt<br>T C =25 [o] C 100ms<br>Single Pulse DC<br>0.001 SENSete eens 0.001<br>1 10 100 1000<br>V DS , Drain-to-Source Voltage (V)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>)thjcthjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
**Fig 7. Gate Charge Characteristics**
**Fig 8. Typical Capacitance Characteristics**
**Fig 9. Maximum Safe Operating Area**
**Fig10. Effective Transient Thermal Impedance**
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VDS<br>90%<br>10%<br>VGS<br>td(on) [t] r td(off) tf<br>**----- End of picture text -----**<br>
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VG<br>QG<br>10V<br>QGS QGD<br>Charge Q<br>**----- End of picture text -----**<br>
**Fig 11. Switching Time Waveform**
**Fig 12. Gate Charge Waveform**
**4**
**XP60SA380DIT**
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2000 40<br>T j =25 [o] C<br>1600<br>PePeP Pere<br>1200<br>20<br>800<br>V GS =10V<br>400<br>0 ca 0 CNS<br>0 2 4 6 8 10 12 0 50 100 150<br>I D , Drain Current (A) T C , Case Temperature( [o] C)<br> Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation<br> Resistance<br>Ω )<br>(m<br>DS(ON)<br>R<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>
**5**
**XP60SA380DIT**
## **MARKING INFORMATION**
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Part Number<br>60SA380D<br>YWWSSS<br>Date Code (YWWSSS)<br> Y ： Last Digit Of The Year<br> WW ： Week<br> SSS ： Sequence<br>7<br>**----- End of picture text -----**<br>
**6**
## **Package Outline : TO-220CFM-T**
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**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|E|A|SYMBOLS|Millimeters|
|F|MIN|NOM|MAX|
|A|4.30|4.50|4.70|
|——|f|a|LEee|
|φR|Q1|b|0.54|0.69|0.84|
|b1|0.99|1.14|1.29|
|G|
|Q2|c|0.45|0.62|0.79|
|D|14.70|15.00|15.30|
|D1|8.5 Ref.|
|e|2.54 Ref.|
|D|
|E|9.70|10.00|10.30|
|D1|
|F|2.50|2.70|2.90|
|G|6.30|6.70|7.10|
|L|12.50|13.00|13.50|
|L1|1.80|2.30|2.80|
|J|
|α|L1|
|J|0.10|0.20|--|
|Q|
|Q|2.50|2.60|2.90|
|b1|Q1|2.90|3.10|3.30|
|Q2|3.5 Ref.|
|L|
|φR|3.00|3.20|3.40|
|b|.|α|45˚ Ref.|
|e|c|
**----- End of picture text -----**<br>
1.All dimension are in millimeters.
2.Dimension does not include burrs and mold flash/protrusions.
- 3.The outline schematic is not to scale and slightly different from the actual product appearance.
Draw No. M1-IT-3-EF-G-V02
**TO-220CFM-T**
## **TO-220CFM-T FOOTPRINT** ：
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2.54mm 2.54mm<br>1.8mm<br>.<br>1.15mm<br>**----- End of picture text -----**<br>
Draw No. M1-IT-3-EF-G-V02
Updated at June 9, 2026
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