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XP60SA290DIT
MOS N 600V 290MOHM TO-220CFM-T
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: YAGEO XSEMI
- Product type: Single MOSFETs
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.612 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **XP60SA290DIT** ~~[fo~~ **Halogen-Free Product**
## _**N-CHANNEL ENHANCEMENT MODE**_
## _**POWER MOSFET**_
- **100% Rg & UIS Test**
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D<br>G<br>S<br>**----- End of picture text -----**<br>
- **Low trr / Qrr**
- **Simple Drive Requirement**
- **RoHS Compliant & Halogen-Free**
## **Description**
XP60SA290D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
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BVDSS 600V<br>R 0.29 Ω<br>DS(ON)<br>3,6<br>ID 13.3A<br>G<br>D S TO-220CFM-T(IT)<br>**----- End of picture text -----**<br>
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a ~~|Parameter<br> ~~ee~~|Rating<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage|600|V|
|VGS<br>~~a~~|Gate-Source Voltage|+<br>20|V|
|VGS<br>~~a~~<br>~~a~~|Gate-Source Voltage, AC(f > 1Hz)|+<br>30|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS @10V3,6|13.3|A|
|ID@TC=100℃<br>~~a~~|Drain Current, VGS @10V3,6|8.4|A|
|IDM<br>~~a~~|Pulsed Drain Current1|28|A|
|dv/dt<br>~~a~~|MOSFET dv/dt Ruggedness(VDS= 0 …480V)|40|V/ns|
|PD@TC=25℃<br>~~a~~|Total Power Dissipation|31.2|W|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation|1.92|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy4|98|mJ|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt5|15|V/ns|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a~~|OperatingJunction Temperature Range|-55 to 150|℃|
## **Thermal Data**
|Symbol|Parameter|Value|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|4|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient|65|℃/W|
**1**
**202311281YAGEO**
**XP60SA290DIT**
## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a~~|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~<br>~~es~~|VGS=0V, ID=250uA<br>~~a~~<br>~~GG~~|600<br>~~a~~<br>~~GG~~|-<br>~~a~~<br>~~GG~~|-<br>~~a~~|V<br>~~a~~|
|RDS(ON)<br>~~a~~<br>~~a~~|Static Drain-Source On-Resistance2<br>~~es~~<br>~~es~~|VGS=10V, ID=5.8A<br>~~GG~~|-<br>~~GG~~|-<br>~~GG~~|0.29|Ω|
|VGS(th)<br>~~a~~<br>~~a~~<br>~~**a**~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~es~~|VDS=VGS, ID=250uA<br>~~GG~~|2<br>~~GG~~|-<br>~~GG~~|4|V|
|gfs<br>~~a~~<br>~~**a**~~|Forward Transconductance<br>~~es~~<br>~~es~~|VDS=10V, ID=5.8A|-|6.7|-|S|
|IDSS<br>~~**a**~~|Drain-Source Leakage Current<br>~~es~~<br>~~a~~|VDS=480V, VGS=0V<br>~~a~~|-<br>~~a~~|-<br>~~a~~|100<br>~~a~~|uA<br>~~a~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~a~~<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|+<br>1<br>~~a~~<br>~~a~~|uA<br>~~a~~<br>~~a~~|
|Qg<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~a~~|ID=5A<br>VDS=480V<br>VGS=10V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~se~~<br>~~es~~|30<br>~~a~~<br>~~a~~<br>~~se~~|48<br>~~a~~<br>~~a~~<br>~~se~~|nC<br>~~a~~<br>~~a~~<br>~~se~~|
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~es~~<br>~~es~~|7|-|nC|
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|14|-|nC|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDD=300V<br>ID=5A<br>RG=3.3Ω<br>VGS=10V|-<br>~~es~~<br>~~es~~<br>~~es~~|13|-|ns|
|tr<br>~~a~~<br>~~a~~<br>~~**a**~~|Rise Time||-<br>~~es~~<br>~~es~~<br>~~es~~|13<br>|-<br>|ns<br>|
|td(off)<br>~~a~~<br>~~**a**~~|Turn-off DelayTime||-<br>~~es~~<br>~~es~~|33<br>|-<br>|ns<br>|
|tf<br>~~**a**~~|Fall Time||-<br>~~esa~~|8<br>~~a~~|-<br>~~a~~|ns<br>~~a~~|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>~~a~~|VGS=0V<br>VDS=100V<br>f=1.0MHz<br>~~a~~|-<br>~~a~~<br>~~i~~<br>~~es~~|1020<br>~~a~~|1632<br>~~a~~|pF<br>~~a~~|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance||-<br>~~es~~<br>~~es~~|44|-|pF|
|Crss<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance||-<br>~~es~~<br>~~es~~|5|-|pF|
|Rg<br>~~a~~<br>~~a~~|Gate Resistance|f=1.0MHz|-<br>~~es~~|3.3|6.6|Ω|
## **Notes:**
1.Pulse width limited by max. junction temperature.
## 2.Pulse test
3.Ensure that the junction temperature does not exceed TJmax..
4.Starting Tj=25[o] C , VDD=90V , L=100mH , RG=25 Ω , VGS=10V
- 5.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25[o] C
6.Limited by max. junction temperature. Maximum duty cycle D=0.75
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**2**
**XP60SA290DIT**
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32 16<br>10V<br>T C =25 [o] C T C =150 [o] C 9.0V<br>8.0V<br>24 10V 12 7.0V<br>9.0V V GS =6.0V<br>8.0V 0.37 Ω<br>16 if 7.0V 8<br>| |<br>8 V GS =6.0V 4 (7Epe<br>Fret) fe<br>0 Pep) 0 Veber<br>0 8 16 24 32 0 4 8 12 16 20 24<br>V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)<br> Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>400 4<br>I D =5.8A I D =5.8A<br>T C =25 [o] C V GS =10V<br>360 3<br>[EERES] [EEE<br>320 2<br>280 FALL] 1 [hee<br>babe | Poe<br>240 POSSE) 0 ETE<br>4 5 6 7 8 9 10 -100 -50 0 50 100 150<br>V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( [o] C )<br> Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance<br> v.s. Junction Temperature<br>6 2<br>I D =250uA<br>5<br>PEPER TP 1.6<br>4 PERERA<br>ARE ES 1.2<br>3<br>T j = 150 [o] C T j = 25 [o] C 0.8<br>2<br>0.4<br>1<br>0 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150<br>V SD (V) T j , Junction Temperature ( [o] C )<br> , Drain Current (A)ID , Drain Current (A)ID<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br> (A)IS<br>Normalized V<br>**----- End of picture text -----**<br>
**Fig 1. Typical Output Characteristics**
**Fig 3. On-Resistance v.s. Gate Voltage**
**Fig 5. Forward Characteristic of Reverse Diode**
**Fig 6. Gate Threshold Voltage v.s. Junction Temperature**
**3**
**XP60SA290DIT**
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12 10000 f=1.0MHz<br>I D =5A ==5=5=5==5 === ==S ===<br>10 V DS =480V Tort rprratst —~--leoL et<br>1000 C iss<br>8 0.37 Ω<br>6 100 |<br>t ey ee ee is eee<br>4 C oss<br>10 C rss<br>2<br>0 1<br>0 10 20 30 40 0 200 400 600 800<br>Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)<br> Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics<br>100 SSS SESE 1 Soa<br>Seep trt beset tir eeeeeped5 Duty factor=0.5 Heel=o<br>SS 7 (ll | A TAIT TTT<br>Operation in this area 0.2<br>10 limited by RDS(ON)<br>Boye MEETS PEREM AE Ses 4 0.1 0.1 Le<br>DopZz<br>a co Noise roll Nota a 0.05 Aa<br>Py aan NON OAL im) WE oN ESN, 10us n a /_ Aa<br>1 ae| Pittins) ON \TORTin ONNee 100us T 0.02 LA<br>i}iF latI-l+ot Ht NeBEY EA ~ \ Iaa 84p<br>FS STFA TF ORAS ASS ING AS fs 0.01 WA PDM<br>SSRENRaAtAtH AO ot PMG HN Sim Nas 1ms au SON 0.01 Single Pulse t|Iai t | T | |<br>0.1<br>eee Ny SY: EHR = feo fl<br>SSEi} S555 T C a4[oe =25 R84 [o] rit C == 5555ProPetliuFSG NESE\SSG 10ms HSrmimi oe| Duty factor = t/T Peak T j = P DM x R thjc + T C ml||<br>Single Pulse 100ms<br>0.01 i}l rideon rrdddd[oe DC imiimi 0.001<br>1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10<br>V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
**Fig 7. Gate Charge Characteristics**
**Fig 8. Typical Capacitance Characteristics**
**Fig 9. Maximum Safe Operating Area**
**Fig10. Effective Transient Thermal Impedance**
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VDS<br>90%<br>10%<br>VGS<br>td(on) [t] r td(off) tf<br>**----- End of picture text -----**<br>
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VG<br>QG<br>10V<br>QGS QGD<br>Charge Q<br>**----- End of picture text -----**<br>
**Fig 11. Switching Time Waveform**
**Fig 12. Gate Charge Waveform**
**4**
**XP60SA290DIT**
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800 50<br>T j =25 [o] C<br>40<br>600<br>EE] 30 FEEEEE<br>400<br>V GS =10V 20<br>200<br>10<br>0 H—] 0 Pn.<br>0 4 8 12 16 0 50 100 150<br>I D , Drain Current (A) T C , Case Temperature( [o] C)<br>Ω )<br>(m<br>DS(ON)<br>R<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>
**Fig 13. Typ. Drain-Source on State Resistance**
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Fig 14. Total Power Dissipation<br>**----- End of picture text -----**<br>
**5**
**XP60SA290DIT**
## **MARKING INFORMATION**
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Part Number<br>60SA290D<br>YWWSSS<br>Date Code (YWWSSS)<br> Y ： Last Digit Of The Year<br> WW ： Week<br> SSS ： Sequence<br>**----- End of picture text -----**<br>
**6**
## **Package Outline : TO-220CFM-T**
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|||||||
|---|---|---|---|---|---|
|E|A|SYMBOLS|Millimeters|
|F|MIN|NOM|MAX|
|A|4.30|4.50|4.70|
|——|f|a|LEee|
|φR|Q1|b|0.54|0.69|0.84|
|b1|0.99|1.14|1.29|
|G|
|Q2|c|0.45|0.62|0.79|
|D|14.70|15.00|15.30|
|D1|8.5 Ref.|
|e|2.54 Ref.|
|D|
|E|9.70|10.00|10.30|
|D1|
|F|2.50|2.70|2.90|
|G|6.30|6.70|7.10|
|L|12.50|13.00|13.50|
|L1|1.80|2.30|2.80|
|J|
|α|L1|
|J|0.10|0.20|--|
|Q|
|Q|2.50|2.60|2.90|
|b1|Q1|2.90|3.10|3.30|
|Q2|3.5 Ref.|
|L|
|φR|3.00|3.20|3.40|
|b|.|α|45˚ Ref.|
|e|c|
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1.All dimension are in millimeters.
2.Dimension does not include burrs and mold flash/protrusions.
- 3.The outline schematic is not to scale and slightly different from the actual product appearance.
Draw No. M1-IT-3-EF-G-V02
**TO-220CFM-T**
## **TO-220CFM-T FOOTPRINT** ：
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2.54mm 2.54mm<br>1.8mm<br>.<br>1.15mm<br>**----- End of picture text -----**<br>
Draw No. M1-IT-3-EF-G-V02
Updated at June 9, 2026
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