XP50SL290DH

**XP50SL290DH Halogen-Free Product** 

_**N-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

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D BVDSS 500V<br>R 0.29 Ω<br>DS(ON)<br>3<br>ID 13A<br>G oe<br>S<br>silicon process<br>and fast G D 5<br>S<br>an extreme TO-252(H)<br>**----- End of picture text -----**<br>


- **100% Rg & UIS Test** 

- **Low trr / Qrr** 

- **Simple Drive Requirement** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP50SL290D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|VDS|Drain-Source Voltage|500|V|
|VGS|Gate-Source Voltage|+<br>20|V|
|VGS|Gate-Source Voltage, AC(f > 1Hz)|+<br>30|V|
|ID@TC=25℃|Drain Current, VGS@ 10V3|13|A|
|ID@TC=100℃|Drain Current, VGS@ 10V3|8.2|A|
|IDM|Pulsed Drain Current1|32|A|
|dv/dt|MOSFET dv/dt Ruggedness(VDS= 0 …400V)|30|V/ns|
|PD@TC=25℃|Total Power Dissipation|89.2|W|
|PD@TA=25℃|Total Power Dissipation6<br>~~SSS~~|2<br>~~SSS~~|W<br>~~SSS~~|
|EAS|Single Pulse Avalanche Energy4<br>~~SSS~~|108<br>~~SSS~~|mJ<br>~~SSS~~|
|dv/dt|Peak Diode Recoverydv/dt5<br>~~SSS~~|15<br>~~SSS~~|V/ns<br>~~SSS~~|
|TSTG|Storage Temperature Range<br>~~SSS~~|-55 to 150<br>~~SSS~~|℃<br>~~SSS~~|
|TJ|OperatingJunction Temperature Range<br>~~SSS~~|-55 to 150<br>~~SSS~~|℃<br>~~SSS~~|



**1** 

**202311271YAGEO** 

**XP50SL290DH** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~<br>~~es~~|VGS=0V, ID=250uA<br>~~a~~<br>~~GG~~|500<br>~~a~~<br>~~GG~~|-<br>~~a~~<br>~~GG~~|-<br>~~a~~|V<br>~~a~~|
|RDS(ON)<br>~~a~~<br>~~a~~|Static Drain-Source On-Resistance2<br>~~es~~<br>~~es~~|VGS=10V, ID=4A<br>~~GG~~|-<br>~~GG~~|-<br>~~GG~~|0.29|Ω|
|VGS(th)<br>~~a~~<br>~~a~~<br>~~**a**~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~es~~|VDS=VGS, ID=250uA<br>~~GG~~|2<br>~~GG~~|-<br>~~GG~~|5|V|
|gfs<br>~~a~~<br>~~**a**~~|Forward Transconductance<br>~~es~~<br>~~es~~|VDS=10V, ID=5A|-|7|-|S|
|IDSS<br>~~**a**~~|Drain-Source Leakage Current<br>~~es~~<br>~~a~~|VDS=400V, VGS=0V<br>~~a~~|-<br>~~a~~|-<br>~~a~~|100<br>~~a~~|uA<br>~~a~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~a~~<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|+<br>1<br>~~a~~<br>~~a~~|uA<br>~~a~~<br>~~a~~|
|Qg<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~a~~|ID=5A<br>VDS=400V<br>VGS=10V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~se~~<br>~~es~~|29<br>~~a~~<br>~~a~~<br>~~se~~|46.4<br>~~a~~<br>~~a~~<br>~~se~~|nC<br>~~a~~<br>~~a~~<br>~~se~~|
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~es~~<br>~~es~~|6.5|-|nC|
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|13|-|nC|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDD=250V<br>ID=5A<br>RG=3.3Ω<br>VGS=10V|-<br>~~es~~<br>~~es~~<br>~~es~~|13|-|ns|
|tr<br>~~a~~<br>~~a~~<br>~~**a**~~|Rise Time||-<br>~~es~~<br>~~es~~<br>~~es~~|12<br>|-<br>|ns<br>|
|td(off)<br>~~a~~<br>~~**a**~~|Turn-off DelayTime||-<br>~~es~~<br>~~es~~|31<br>|-<br>|ns<br>|
|tf<br>~~**a**~~|Fall Time||-<br>~~esa~~|7<br>~~a~~|-<br>~~a~~|ns<br>~~a~~|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>~~a~~|VGS=0V<br>VDS=100V<br>f=1.0MHz<br>~~a~~|-<br>~~a~~<br>~~i~~<br>~~es~~|1020<br>~~a~~|1632<br>~~a~~|pF<br>~~a~~|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance||-<br>~~es~~<br>~~es~~|42|-|pF|
|Crss<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance||-<br>~~es~~<br>~~es~~|5|-|pF|
|Rg<br>~~a~~<br>~~a~~|Gate Resistance|f=1.0MHz|-<br>~~es~~|3.6|7.2|Ω|



## **Notes:** 

## 1.Pulse width limited by max. junction temperature. 

## 2.Pulse test 

- 3.Limited by max. junction temperature. Maximum duty cycle D=0.75 

- 4.Starting Tj=25[o] C , VDD=50V , L=150mH , RG=25 Ω 

- 5.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25[o] C 

- 6.Surface mounted on 1 in[2] copper pad of FR4 board 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP50SL290DH** 

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16<br>T C =150 [o] C 10V<br>9.0V<br>8.0V<br>12 [OB 7.0V<br>0.37 Ω V G =6.0V<br>8<br>4<br>0 Zee<br>0 4 8 12 16 20 24<br>V DS  , Drain-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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25<br>T C =25 [o] C 10V<br>9.0V<br>20 8.0V<br>Z<br>7.0V<br>15<br>10<br>V G =6.0V<br>5<br>0 Feeeee)<br>0 4 8 12 16 20 24<br>V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics<br>460<br>I D =5A<br>420 T C =25 [o] C<br>:<br>380<br>340<br>300<br>260<br>220 papers<br>4 5 6 7 8 9 10<br>V GS  Gate-to-Source Voltage (V)<br>              Fig 3. On-Resistance  v.s. Gate Voltage<br>16<br>12<br>8 AALEEE<br>T j  = 150 [o] C T j  = 25 [o] C<br>4<br>Reve a venen<br>0 EET<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>V SD  (V)<br> , Drain Current (A)<br>ID<br>Ω )<br> (m<br>DS(ON)<br>R<br> (A)IS<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 2. Typical Output Characteristics** 

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3.2<br>I D =5A<br>V G  =10V<br>fof 2.4<br>1.6<br>0.8<br>0<br>10 -100 -50 0 50 100 150<br>T j  , Junction Temperature ( [o] C )<br>DS(ON)<br>Normalized R<br>**----- End of picture text -----**<br>


**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 4. Normalized On-Resistance v.s. Junction Temperature** 

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2<br>I D =250uA<br>1.6<br>1.2<br>0.8<br>0.4 ~<br>0 ae<br>-100 -50 0 50 ES 100 150<br>T j  , Junction Temperature (  [o] C )<br>              Fig 6. Gate Threshold Voltage v.s.<br>           Junction Temperature<br>GS(th)<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 5. Forward Characteristic of** 

**Reverse Diode** 

**3** 

**XP50SL290DH** 

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12<br>I D =5A<br>10 V DS =400V<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40<br>Q G  , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

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100 ee<br>10 Operation in this area limited by RDS(ON) ee |<br>1 acti SONNSS ETT<br>10us<br>0.1 100us<br>1ms<br>0.01 SUSHIL GUNES 10ms<br>T C =25 [o] C 100ms<br>Single Pulse DC<br>0.001<br>1 10 100 1000<br>eee<br>V DS  , Drain-to-Source Voltage (V)<br>(A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area** 

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100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150<br>T C  , Case Temperature (  [o] C )<br> , Power Dissipation (W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Fig 11. Total Power Dissipation** 

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f=1.0MHz<br>5000<br>4000<br>0.37 Ω<br>3000<br>2000<br>C iss<br>1000<br>C oss<br>C rss<br>0 Mee<br>0 100 200 300 400 500 600<br>V DS  , Drain-to-Source Voltage (V)<br>              Fig 8. Typical Capacitance Characteristics<br>1<br>Duty factor=0.5 SeeZ ali Sea<br>0.2<br>0.1 smeia,iim<br>0.1 0.05<br>0.02<br>0.01 P DM<br>t<br>Single Pulse<br>T<br>CEA SH<br>Duty factor = t/T<br>Peak T j  = P DM  x R thjc  + T C<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>COMMUN vw ul<br>t , Pulse Width (s)<br>C (pF)<br>)thjc<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 8. Typical Capacitance Characteristics** 

**Fig10. Effective Transient Thermal Impedance** 

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1000<br>T j =25 [o] C<br>800<br>600<br>400<br>V GS =10V<br>200<br>0<br>0 2 4 6 8 10 12<br>I D  , Drain Current (A)<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Fig 12. Typ. Drain-Source on State Resistance** 

**4** 

**XP50SL290DH** 

## **MARKING INFORMATION** 

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Part Number<br>50SL290D<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**5** 

## **Package Outline : TO-252** 

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Millimeters<br>SYMBOLS<br>MIN NOM MAX<br>D<br>A2 2.18 2.30 2.40<br>rr<br>A3 0.40 0.50 0.65<br>D1<br>— —|)| eeee ee<br>B 0.40 0.70 1.00<br>= E2 Sy B1 0.50 0.85 1.20<br>D 6.00 6.50 6.80<br>D1 4.80 5.35 5.90<br>mai ne E3 —— E3 4.00 (ref.)<br>E1<br>F 2.00 2.63 3.05<br>F1 0.50 0.85 1.20<br>E1 5.00 5.70 6.30<br>E2 0.50 1.10 1.80<br>F1 e 2.3 (ref)<br>C 0.35 0.525 0.70<br>B1<br>F<br>B2 A1 0.00 － 0.25<br>B<br>B2 － － 1.25<br>a e e SEE L 0.90 1.34 1.78<br>.<br>_<br>A2<br>Ved uP C<br>| A1 f okt<br>A3 L<br>|<br>1.All Dimensions Are in Millimeters.<br>**----- End of picture text -----**<br>


2.Dimension Does Not Include Mold Protrusions. 

3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. 

Draw No.  M1-H3EFIMT-G-v10 

**TO-252** 

## **TO-252 FOOTPRINT** ： 

## . rT 

Draw No. M1-H3EFIMT-G-v10