XP4NA2R2HCST

## **XP4NA2R2HCST** ~~[oo~~ **Halogen-Free Product** 

_**N-CHANNEL ENHANCEMENT MODE POWER MOSFET**_ 

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D BVDSS 40V<br>RDS(ON) 2.28m Ω<br>G<br>S D<br>process<br>an andextremefastextremefast [S] [G]<br>S [S]<br>**----- End of picture text -----**<br>


- **100% Rg & UIS Test** 

- **Simple Drive Requirement** 

- **Low On-resistance** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

AP4NA2R2HC series are innovated design and silicon process technology to achieve the lowest possible on-resistance fast switching performance. It provides the designer with an andextremefastextremefast efficient device for use in a wide range of power applications. 

**SPPAK 5x6** 

The SPPAK 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage<br>~~a~~<br>~~a~~|40|V|
|VGS<br>~~a~~|Gate-Source Voltage<br>~~a~~<br>~~a~~|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V5(Silicon Limited)<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|160|A|
|ID@TC=25℃<br>~~a~~|Drain Current, VGS@ 10V5(Package Limited)<br>~~a~~<br>~~a~~|100|A|
|ID@TC=100℃<br>~~a~~|Drain Current , VGS@ 10V5(Package Limited)<br>~~a~~|100|A|
|ID@TA=25℃<br>~~a~~|Drain Current, VGS@ 10V3<br>~~a~~|36.5|A|
|ID@TA=70℃<br>~~a~~|Drain Current, VGS@ 10V3<br>~~a~~<br>~~a~~|29|A|
|IDM<br>~~a~~|Pulsed Drain Current1|500|A|
|PD@TC=25℃<br>~~a ~~|Total Power Dissipation<br> ~~a~~|96.1|W|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation3|5|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy4|80|mJ|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a ~~|OperatingJunction Temperature Range<br> ~~ee~~|-55 to 150<br>~~ee~~|℃<br>~~ee~~|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|1.3|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|℃/W|



**1** 

**202401221YAGEO** 

**XP4NA2R2HCST** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.<br>~~ee~~|Typ.<br>~~ee~~<br>~~ee~~|Max.<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~pO~~|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~pO~~|VGS=0V, ID=250uA<br>~~ee~~<br>~~pO~~|40<br>~~ee~~<br>~~pO~~|-<br>~~ee~~<br>~~ee~~<br>~~pO~~|-<br>~~ee~~<br>~~pO~~|V<br>~~ee~~<br>~~pO~~|
|RDS(ON)<br>~~a~~|Static Drain-Source On-Resistance2<br>~~eG~~|VGS=10V, ID=40A<br>~~eG~~|-<br>~~eG~~|-<br>~~eG~~|2.28<br>~~eG~~|mΩ<br>~~eG~~|
|VGS(th)<br>~~pO~~|Gate Threshold Voltage<br>~~pO~~|VDS=VGS, ID=250uA<br>~~pO~~|2<br>~~pO~~|-<br>~~pO~~|4<br>~~pO~~|V<br>~~pO~~|
|gfs<br>~~a~~|Forward Transconductance<br>~~eG~~|VDS=5V, ID=40A<br>~~eG~~|-<br>~~eG~~|120<br>~~eG~~|-<br>~~eG~~|S<br>~~eG~~|
|IDSS<br>~~pO~~<br>~~a~~|Drain-Source Leakage Current<br>~~pO~~<br>~~ee~~|VDS=32V, VGS=0V<br>~~pO~~|-<br>~~pO~~|-<br>~~pO~~|10<br>~~pO~~|uA<br>~~pO~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~ee~~|VGS=+<br>20V, VDS=0V|-|-|+<br>0.1|uA|
|Qg<br>~~a~~<br>~~es~~<br>~~es~~|Total Gate Charge6<br>~~ee~~<br>~~ee~~<br>~~ee~~|ID=40A<br>VDS=20V<br>VGS=10V|-<br>~~a~~<br>~~a~~|50<br>~~a~~<br>~~a~~|80<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|Qgs<br>~~es~~<br>~~es~~<br>~~rs~~|Gate-Source Charge6<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~a~~<br>~~ee~~|12<br>~~a~~<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~a~~<br>~~ee~~|nC<br>~~a~~<br>~~a~~<br>~~ee~~|
|Qgd<br>~~es~~<br>~~rs~~<br>~~es~~|Gate-Drain("Miller")Charge6<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~<br>~~a~~|14<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~<br>~~ee~~<br>~~a~~|nC<br>~~a~~<br>~~ee~~<br>~~a~~|
|td(on)<br>~~rs~~<br>~~es~~<br>~~es~~|Turn-on DelayTime6<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDS=20V<br>ID=40A<br>RG=3.3Ω<br>VGS=10V<br>~~|~~|-<br>~~ee~~<br>~~a~~<br>~~|~~<br>~~**|**~~|12<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|ns<br>~~ee~~<br>~~a~~|
|tr<br>~~es~~<br>~~es~~<br>~~es~~|Rise Time6<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|72<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|td(off)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-off DelayTime6<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~ee~~|34<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|ns<br>~~a~~<br>~~ee~~|
|tf<br>~~es~~<br>~~es~~<br>~~es~~|Fall Time6<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~<br>~~a~~|12<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~<br>~~ee~~<br>~~a~~|ns<br>~~a~~<br>~~ee~~<br>~~a~~|
|Ciss<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance6<br>~~ee~~<br>~~ee~~<br>~~ee~~|VGS=0V<br>VDS=30V<br>f=1.0MHz<br>~~|~~<br>~~|~~<br>~~eG~~|-<br>~~ee~~<br>~~a~~<br>~~|~~<br>~~|~~|2500<br>~~ee~~<br>~~a~~<br>~~|~~|4000<br>~~ee~~<br>~~a~~|pF<br>~~ee~~<br>~~a~~|
|Coss<br>~~es~~<br>~~es~~<br>~~re~~|Output Capacitance6<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~|~~<br>~~|ot~~|570<br>~~a~~<br>~~|~~<br>~~ot~~<br>~~|~~|-<br>~~a~~|pF<br>~~a~~|
|Crss<br>~~es~~<br>~~re~~<br>~~a~~|Reverse Transfer Capacitance6<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|ot~~<br>~~eG~~|50<br>~~|~~<br>~~ot~~<br>~~|~~<br>~~eG~~|-<br>~~eG~~|pF<br>~~eG~~|
|Rg<br>~~re~~<br>~~a~~|Gate Resistance<br>~~ee~~<br>~~ee~~|f=1.0MHz<br>~~|~~<br>~~eG~~|-<br>~~| ot~~<br>~~eG~~|1.5<br>~~ot~~<br>~~|~~<br>~~eG~~|3<br>~~eG~~|Ω<br>~~eG~~|



## **Notes:** 

- 1.Pulse width limited by Max. junction temperature. 

## 2.Pulse test 

- 3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec ; 60[o] C/W at steady state. 

4.Starting Tj=25[o] C , VDD=30V , L=0.1mH , RG=25Ω , VGS=10V 

- 5.Package limitation current is 100A . 

- 6.Guaranteed by design. 

7.These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150[o] C. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP4NA2R2HCST** 

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300 200<br>T C =25 [o] C 10V T C =150 [o] C 10V<br>9 .0V 9 .0V<br>8 .0V 160 8 .0V<br>7 .0V 7 .0V<br>200 V GS = 6 .0V 0.95m V GS Ω  = 6 .0V<br>120<br>80<br>100<br>40 ae<br>0 0 aoe<br>0 2 4 6 8 0 2 4 6 8 10<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>6 2<br>I D = 4 0A I D =40A<br>T C =25 [o] C V  GS =10V<br>5<br>1.6<br>4<br>1.2<br>3<br>0.8<br>2<br>1 0.4<br>4 6 8 10 -100 -50 0 50 100 150<br>V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>100 2.0<br>I D =250uA<br>1.6<br>10<br>i) 1.2 |e<br>T j =150 [o] C T j =25 [o] C<br>0.8<br>1<br>cetien| Se<br>0.4<br>0.1 TTP) 0.0 EL<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150<br>V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 5. Forward Characteristic of               Fig 6. Gate Threshold Voltage v.s.<br>          Reverse Diode           Junction Temperature<br> , Drain Current (A)ID  , Drain Current (A)ID<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 5. Forward Characteristic of** 

**3** 

**XP4NA2R2HCST** 

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12 4000 f=1.0MHz<br>I D =40A<br>10 V DS =20V<br>3000<br>8 0.95m Ω C iss<br>6 2000<br>4<br>1000<br>2<br>C oss<br>C rss<br>0 0<br>0 10 Q G  , Total Gate Charge (nC)20 30 40 50 60 1 11V DS  , Drain-to-Source Voltage (V)21 31 41 51<br>              Fig 7. Gate Charge Characteristics              Fig 8. Typical Capacitance Characteristics<br>1000 1<br>Duty factor=0.5<br>Operation in this<br>area limited by<br>RDS(ON)<br>100 0.2<br>100us<br>0.1 0.1<br>10 ee ee 1ms 0.05 nae PDMDM<br>t<br>10ms 0.02 T<br>Duty factor = t/T<br>T C =25 [o] C DC 0.01 Peak Tj = PDM x Rthjc + TCj = PDM x Rthjc + TC = PDM x Rthjc + TCDM x Rthjc + TC x Rthjc + TCthjc + TC + TCC<br>Single  Pulse Single Pulse<br>1 0.01<br>0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>)thjcthjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

**Fig 8. Typical Capacitance Characteristics** 

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1<br>Duty factor=0.5<br>0.2<br>0.1 0.1<br>0.05 nae PDMDM<br>t<br>T<br>0.02<br>Duty factor = t/T<br>0.01 Peak Tj = PDM x Rthjc + TCj = PDM x Rthjc + TC = PDM x Rthjc + TCDM x Rthjc + TC x Rthjc + TCthjc + TC + TCC<br>Single Pulse<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Pulse Width (s)<br>)thjcthjc<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area[7]** 

**Fig 10. Effective Transient Thermal Impedance** 

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200 150<br>V DS =5V<br>160 et 120<br>~~ tT tT |) eee<br>120 90<br>Limited by package ieee ee ee<br>a<br>80 60<br>T j =150 [o] C<br>40 30<br>T j =25 [o] C<br>0 NL 0 a) T j =-55 ae [o] C<br>25 50 75 100 125 150 0 2 4 6<br>T C  , Case Temperature (  [o] C ) V GS , Gate-to-Source Voltage (V)<br> , Drain Current (A)ID  , Drain Current (A)ID<br>**----- End of picture text -----**<br>


**Fig 11. Drain Current v.s. Case Temperature** 

**Fig 12. Transfer Characteristics** 

_**6 8**_ 

**4** 

**XP4NA2R2HCST** 

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2<br>I D  =1mA<br>1.6<br>a<br>1.2<br>Seen eeees<br>0.8<br>0.4<br>0<br>-100 -50 0 50 100 150<br>T  j  , Junction Temperature ( [o] C)<br>DSS<br>Normalized BV<br>**----- End of picture text -----**<br>


**Fig 13. Normalized BVDSS  v.s. Junction Temperature** 

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120<br>100<br>80 SSS 0.95m Ω<br>60<br>e t Cena<br>4020 pppope<br>0<br>0 Seer 50  een 100 150<br>T C , Case Temperature( [o] C)<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Fig 14. Total Power Dissipation** 

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40<br>T j =25 [o] C<br>30 GIEEEanaeace<br>20<br>10<br>V GS =10V<br>0 a<br>0 20 40 60 80 100 120<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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I D  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 15. Typ. Drain-Source on State Resistance** 

**5** 

**XP4NA2R2HCST** 

## **MARKING INFORMATION** 

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Part Number<br>4NA2R2HC<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

## **Package Outline : SPPAK 5X6** 

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Millimeters<br>E SYMBOLS<br>MIN NOM MAX<br>— b2 — Ee<br>A 1.00 - 1.30<br>ee<br>A1 0 0.075 0.15<br>L1<br>A2 0.98 1.05 1.12<br>—<br>Af b 0.35 ee 0.42 ee 0.50 ee<br>b2 4.02 4.23 4.41<br>i ane 1 c 0.19 0.22 0.25 —<br>D1<br>c1 0.24 0.27 0.30<br>D D 4.45 - 4.70<br>H<br>Eject Pin Mark D1 - - 4.45<br>| On | ee<br>ro es ee ee<br>E 4.95 - 5.30<br>E1 E1 3.50 - 3.70<br>e 1.27 BSC<br>L2 H 5.95 - 6.25<br>YOSet]Go |  REE L 0.40 - 0.85<br>_ e | — L1 0.27 - 0.57<br>b<br>L2 0.80 - 1.30<br>ee<br>.<br>1.All Dimensions Are in Millimeters.<br>2.Dimension Does Not Include Mold Protrusions.<br>A2 A<br>Toon P+<br>c1<br>A1 c<br>Set  —$<br>L<br>**----- End of picture text -----**<br>


. 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 

Draw No.  M1-CST4I-G-v02 

## **SPPAK 5X6** 

## **SPPAK 5X6 FOOTPRINT** ： 

# **.** } 

Draw No.  M1-CST4I-G-v02