XP4NA1R5HCST

## **XP4NA1R5HCST** ~~[oo~~ **Halogen-Free Product** 

## _**N-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

- **100% Rg & UIS Test** 

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D<br>G<br>S<br>**----- End of picture text -----**<br>


- **Simple Drive Requirement** 

- **Low On-resistance** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP4NA1R5HC series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

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BVDSS 40V<br>RDS(ON) 1.5m Ω<br>D<br>[G]<br>[S]<br>S [S]<br>**----- End of picture text -----**<br>


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SPPAK 5x6<br>**----- End of picture text -----**<br>


The SPPAK 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage<br>~~a~~|40|V|
|VGS<br>~~a~~|Gate-Source Voltage<br>~~a~~<br>~~a~~|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V6(Silicon Limited)<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|225|A|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V6(Package Limited)<br>~~a~~<br>~~a~~<br>~~ee~~|100|A|
|ID@TC=100℃<br>~~a~~|Drain Current , VGS@ 10V6(Package Limited)<br>~~ee~~|100|A|
|ID@TA=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V3<br>~~ee~~<br>~~a~~<br>~~a~~|45|A|
|ID@TA=70℃<br>~~a~~|Drain Current, VGS@ 10V3<br>~~a~~|36|A|
|IDM<br>~~a~~|Pulsed Drain Current1<br>~~a~~<br>~~a~~|720|A|
|PD@TC=25℃<br>~~a~~|Total Power Dissipation|125|W|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation3|5|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy4|125|mJ|
|TSTG<br>~~a ~~|Storage Temperature Range<br> ~~a~~|-55 to 150|℃|
|TJ<br>~~a ~~|OperatingJunction Temperature Range<br> ~~a~~|-55 to 150|℃|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|1|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|℃/W|



**1** 

**202401221YAGEO** 

**XP4NA1R5HCST** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.|Typ.<br>~~ee~~|Max.<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~eG~~|VGS=0V, ID=250uA<br>~~ee~~<br>~~eG~~|40<br>~~eG~~|-<br>~~ee~~<br>~~eG~~|-<br>~~ee~~<br>~~eG~~|V<br>~~ee~~<br>~~eG~~|
|RDS(ON)<br>~~pO~~|Static Drain-Source On-Resistance2<br>~~pO~~|VGS=10V, ID=40A<br>~~pO~~|-<br>~~pO~~|-<br>~~pO~~|1.5<br>~~pO~~|mΩ<br>~~pO~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~eG~~|VDS=VGS, ID=250uA<br>~~eG~~|2.4<br>~~eG~~|-<br>~~eG~~|3.6<br>~~eG~~|V<br>~~eG~~|
|gfs<br>~~pO~~|Forward Transconductance<br>~~pO~~|VDS=5V, ID=40A<br>~~pO~~|-<br>~~pO~~|150<br>~~pO~~|-<br>~~pO~~|S<br>~~pO~~|
|IDSS<br>~~a~~<br>~~a~~|Drain-Source Leakage Current<br>~~eG~~<br>~~ee~~|VDS=32V, VGS=0V<br>~~eG~~<br>~~GG~~|-<br>~~eG~~<br>~~G~~|-<br>~~eG~~<br>~~G~~|10<br>~~eG~~|uA<br>~~eG~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~ee~~|VGS=+<br>20V, VDS=0V<br>~~GG~~|-<br>~~G~~|-<br>~~G~~|+<br>0.1|uA|
|Qg<br>~~a~~<br>~~es~~<br>~~rs~~|Total Gate Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~|ID=40A<br>VDS=20V<br>VGS=10V<br>~~GG~~<br>~~|~~|-<br>~~G~~<br>~~a~~<br>~~|~~<br>~~**|**~~|88<br>~~G~~<br>~~a~~|140.8<br>~~a~~|nC<br>~~a~~|
|Qgs<br>~~es~~<br>~~rs~~<br>~~es~~|Gate-Source Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|21<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|Qgd<br>~~rs~~<br>~~es~~<br>~~es~~|Gate-Drain("Miller")Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~a~~|26<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|td(on)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-on DelayTime5<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDS=20V<br>ID=40A<br>RG=1Ω<br>VGS=10V<br>~~|~~|-<br>~~a~~<br>~~a~~<br>~~a~~|16<br>~~a~~<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~<br>~~a~~|
|tr<br>~~es~~<br>~~es~~<br>~~es~~|Rise Time5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~a~~<br>~~|~~<br>~~**|**~~|70<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|td(off)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-off DelayTime5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|38<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|tf<br>~~es~~<br>~~es~~<br>~~rs~~|Fall Time5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~ee~~|11<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|ns<br>~~a~~<br>~~ee~~|
|Ciss<br>~~es~~<br>~~rs~~<br>~~es~~|Input Capacitance5<br>~~ee~~<br>~~ee~~<br>~~ee~~|VGS=0V<br>VDS=30V<br>f=1.0MHz<br>~~|~~<br>~~pot~~|-<br>~~a~~<br>~~ee~~<br>~~|~~<br>~~|~~|4460<br>~~a~~<br>~~ee~~<br>~~|~~|7136<br>~~a~~<br>~~ee~~|pF<br>~~a~~<br>~~ee~~|
|Coss<br>~~rs~~<br>~~es~~<br>~~rr~~|Output Capacitance5<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~pot~~|960<br>~~ee~~<br>~~|~~<br>~~pot|~~|-<br>~~ee~~<br>~~|~~|pF<br>~~ee~~<br>~~|~~|
|Crss<br>~~es~~<br>~~rr~~<br>~~a~~|Reverse Transfer Capacitance5<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~pot~~|90<br>~~|~~<br>~~pot|~~|-<br>~~|~~|pF<br>~~|~~|
|Rg<br>~~rr~~<br>~~a~~|Gate Resistance<br>~~ee~~|f=1.0MHz<br>~~pot~~|-<br>~~pot~~|1<br>~~pot |~~|2<br>~~|~~|Ω<br>~~|~~|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=40A, VGS=0V|-|-|1.2|V|
|trr|Reverse Recovery Time5|IS=40A,VGS=0V,<br>dI/dt=100A/µs|-|47|-|ns|
|Qrr|Reverse RecoveryCharge5||-|45|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

2.Pulse test 

3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec ; 60[o] C/W at steady state. 

4.Starting Tj=25[o] C , VDD=30V , L=0.1mH , RG=25 Ω ,VGS=10V 

- 5.Guaranteed by design. 

- 6.Package limitation current is 100A . 

- 7.These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150[o] C. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP4NA1R5HCST** 

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400 240<br>T C =25 [o] C 10V T C =150 [o] C 10V<br>9.0V 200 9.0V<br>8.0V 8.0V<br>300 7.0V 7.0V<br>! V GS =6.0V 160 PEE Ee 0.95m Ω V  GS  =6.0V<br>200 a 120 ae<br>80<br>100<br>40<br>0 a 0<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>5 2<br>I D =40A D =40A =40A I D =40A<br>T C =25 C =25 =25 [[o]] C V  GS =10V<br>4 1.6<br>3 1.2<br>2 ae 0.8 76<br>1 0.4<br>2 4 6 8 10 -100 -50 0 50 100 150<br>PoPSRSSRS<br>V GS  , Gate-to-Source Voltage (V) GS  , Gate-to-Source Voltage (V)  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br> , Drain Current (A)  , Drain Current (A)<br>ID ID<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

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5<br>I D =40A D =40A =40A<br>T C =25 C =25 =25 [[o]] C<br>4<br>3<br>2 ae<br>1<br>2 4 6 8 10<br>PoPSRSSRS<br>V GS  , Gate-to-Source Voltage (V) GS  , Gate-to-Source Voltage (V)  , Gate-to-Source Voltage (V)<br>              Fig 3. On-Resistance  v.s. Gate Voltage<br>100<br>10<br>ee<br>T j =150 [o] T j =25 [o] C<br>1<br>0.1 TAP)<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>V SD  , Source-to-Drain Voltage (V)<br>Ω )<br> (m<br>DS(ON)<br>R<br>(A)IS<br>**----- End of picture text -----**<br>


**Fig 4. Normalized On-Resistance v.s. Junction Temperature** 

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2<br>I D =250uA<br>1.6<br>1.2<br>0.8<br>0.4<br>0 LLELE<br>-100 -50 0 50 100 150<br>T j  , Junction Temperature ( [o] C)<br>              Fig 6. Gate Threshold Voltage v.s.<br>          Junction Temperature<br>GS(th)<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 5. Forward Characteristic of Reverse Diode** 

**3** 

**XP4NA1R5HCST** 

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12<br>I D =40A<br>10 V DS =20V<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60 80 100 120<br>Q G  , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

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1000<br>Operation in this<br>area limited by<br>RDS(ON)<br>1<br>ee Rea 10us Le<br>100 NO NGESSTE<br>100us<br>oe sais NON EEN oo<br>Hl Iori Hl LIN \ Hl 1ms ian<br>10<br>10ms<br>T C =25 [o] C DC<br>1 Single  Pulse<br>0.1 1 10 100<br>V DS  , Drain-to-Source Voltage (V)<br>(A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area[7]** 

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250200 ef<br>150<br>ea ee<br>Limited by package<br>100<br>50<br>0<br>25 50 75 100 125 150<br>T C  , Case Temperature (  [o] C )<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 11. Drain Current v.s. Case Temperature** 

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8000 f=1.0MHz<br>7000<br>6000<br>5000 0.95m Ω<br>C iss<br>4000<br>3000<br>2000<br>1000 C oss<br>0 C rss<br>1 11 21 31 41 51<br>V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>


**Fig 8. Typical Capacitance Characteristics** 

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1<br>Duty factor=0.5<br>Se ee Se cat Sn,<br>ea<br>Aes 0.2 AU<br>0.1<br>0.1<br>i <j<br>0.05<br>PDM<br>t<br>0.02 T<br>0.01<br>Duty factor = t/T<br>Single Pulse Peak Tj = PDM x Rthjc + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Pulse Width (s)<br>)thjc<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 10. Effective Transient Thermal Impedance** 

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200<br>V DS =5V<br>160<br>120<br>ee<br>80<br>40 T j =150 [o] CT j =25 [o] C<br>T j =-55 [o] C<br>0<br>0 2 4 6 8<br>V GS , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 12. Transfer Characteristics** 

**4** 

**XP4NA1R5HCST** 

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2 160<br>I D  =1mA<br>1.6<br>peep eb 120 pp<br>0.95m Ω<br>1.2<br>SERRE; 80 Noto<br>Pit py \<br>0.8<br>40<br>0.4<br>0 LEE) 0 ERASSEEonS<br>-100 -50 0 50 100 150 0 50 100 150<br>T  j  , Junction Temperature ( [o] C) T C , Case Temperature( [o] C)<br>              Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction               Fig 14. Total Power Dissipation<br>            Temperature<br>40<br>T j =25 [o] C<br>30 ETE:<br>20<br>10<br>V GS =10V<br>0<br>0 20 40 60 80 100 120<br>eae<br>I D  , Drain Current (A)<br>              Fig 15. Typ. Drain-Source on State<br>            Resistance<br>DSS<br>Normalized BV<br>, Power Dissipation(W)<br>D<br>P<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction Temperature** 

**5** 

**XP4NA1R5HCST** 

## **MARKING INFORMATION** 

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Part Number<br>4NA1R5HC<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

## **Package Outline : SPPAK 5X6** 

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Millimeters<br>E SYMBOLS<br>MIN NOM MAX<br>— b2 — Ee<br>A 1.00 - 1.30<br>ee<br>A1 0 0.075 0.15<br>L1<br>A2 0.98 1.05 1.12<br>—<br>Af b 0.35 ee 0.42 ee 0.50 ee<br>b2 4.02 4.23 4.41<br>i ane 1 c 0.19 0.22 0.25 —<br>D1<br>c1 0.24 0.27 0.30<br>D D 4.45 - 4.70<br>H<br>Eject Pin Mark D1 - - 4.45<br>| On | ee<br>ro es ee ee<br>E 4.95 - 5.30<br>E1 E1 3.50 - 3.70<br>e 1.27 BSC<br>L2 H 5.95 - 6.25<br>YOSet]Go |  REE L 0.40 - 0.85<br>_ e | — L1 0.27 - 0.57<br>b<br>L2 0.80 - 1.30<br>ee<br>.<br>1.All Dimensions Are in Millimeters.<br>2.Dimension Does Not Include Mold Protrusions.<br>A2 A<br>Toon P+<br>c1<br>A1 c<br>Set  —$<br>L<br>**----- End of picture text -----**<br>


. 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 

Draw No.  M1-CST4I-G-v02 

## **SPPAK 5X6** 

## **SPPAK 5X6 FOOTPRINT** ： 

# **.** } 

Draw No.  M1-CST4I-G-v02