XP4438GYT

**XP4438GYT** 

## ~~fo~~ **Halogen-Free Product** 

## _**N-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

**==> picture [458 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
▼  Simple Drive Requirement D BVDSS 30V<br>▼  Small Size & Lower Profile RDS(ON) 12m Ω<br>▼  RoHS Compliant & Halogen-Free ID 13.7A<br>G<br>S D<br>Description D D<br>XP4438 series are innovated design and silicon process technology to D<br>achieve the lowest possible on-resistance and fast switching<br>performance. It provides the designer with an extreme efficient device for<br>use in a wide range of power applications.<br>S<br>The PMPAK [[®]] 3x3 package is special for voltage conversion application<br>using standard infrared reflow technique with the backside heat sink to SS G<br>**----- End of picture text -----**<br>


- **Small Size & Lower Profile** 

- **RoHS Compliant & Halogen-Free** 

The PMPAK[[®]] 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. 

**PMPAK[®] 3 x 3** 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage<br>~~a~~<br>~~a~~|30|V|
|VGS<br>~~a~~|Gate-Source Voltage<br>~~a~~<br>~~a~~|+<br>20|V|
|ID@TA=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V3<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|13.7|A|
|ID@TA=70℃<br>~~a~~|Drain Current, VGS@ 10V3|11|A|
|IDM<br>~~a~~|Pulsed Drain Current1|50|A|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation|3.57|W|
|TSTG<br>~~a ~~|Storage Temperature Range<br> ~~a~~|-55 to 150|℃|
|TJ<br>~~a ~~|OperatingJunction Temperature Range<br> ~~a~~|-55 to 150|℃|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|4.5|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|35|℃/W|



**1** 

**202311153YAGEO** 

XP4438GYT 

1 

**XP4438GYT** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~se~~|Test Conditions<br>~~se~~|Min.<br>~~se~~|Typ.<br>~~se~~|Max.<br>~~se~~|Units<br>~~se~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=250uA|30|-|-|V|
|RDS(ON)<br>~~eee~~|Static Drain-Source On-Resistance2<br>~~eee~~|VGS=10V, ID=11A<br>~~eee~~|-<br>~~eee~~|9<br>~~eee~~|12<br>~~eee~~|mΩ<br>~~eee~~|
|||VGS=4.5V, ID=5A<br>~~eee~~|-<br>~~eee~~|15<br>~~eee~~|18<br>~~eee~~|mΩ<br>~~eee~~|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250uA|1|1.5|3|V|
|gfs|Forward Transconductance|VDS=10V, ID=11A|-|20|-|S|
|IDSS<br>~~a a~~|Drain-Source Leakage Current<br>~~a~~|VDS=24V, VGS=0V<br>~~OO~~|-<br>~~OO~~|-<br>~~OO~~|10<br>~~OO~~|uA<br>~~OO~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~OOO~~|VGS=+<br>20V, VDS=0V<br>~~OOO~~|-<br>~~OOO~~|-<br>~~OOO~~|+<br>100<br>~~OOO~~|nA<br>~~OOO~~|
|Qg<br>~~a ~~<br>~~a~~|Total Gate Charge<br> ~~OOO~~|ID=11A<br>VDS=15V<br>VGS=4.5V<br>~~OOO~~<br>~~CT~~|-<br>~~OOO~~<br>~~ry~~|10<br>~~OOO~~<br>~~ry~~|16<br>~~OOO~~<br>~~ry~~|nC<br>~~OOO~~<br>~~ry~~|
|Qgs<br>~~a~~|Gate-Source Charge||-<br>~~Py~~|3<br>~~Py~~|-<br>~~Py~~|nC<br>~~Py~~|
|Qgd<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~Ty~~<br>~~CT~~|4.5<br>~~Ty~~|-<br>~~Ty~~|nC<br>~~Ty~~|
|td(on)<br>~~a~~|Turn-on DelayTime|VDS=15V<br>ID=1A<br>RG=3.3Ω<br>VGS=10V<br>~~CT~~<br>~~CT~~|-<br>~~CT~~|9|-|ns|
|tr<br>~~a~~<br>~~a~~|Rise Time||-<br>~~CT~~<br>~~Ty~~|5<br>~~Ty~~|-<br>~~Ty~~|ns<br>~~Ty~~|
|td(off)<br>~~a~~|Turn-off DelayTime||-<br>~~Py~~|21<br>~~Py~~|-<br>~~Py~~|ns<br>~~Py~~|
|tf<br>~~a~~<br>~~a~~|Fall Time||-<br>~~Ty~~<br>~~CT~~|4.5<br>~~Ty~~|-<br>~~Ty~~|ns<br>~~Ty~~|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>~~ee~~|VGS=0V<br>VDS=15V<br>f=1.0MHz<br>~~CT~~<br>~~ee~~<br>~~|~~<br>~~CT~~|-<br>~~CT~~<br>~~|~~<br>~~|~~|1100<br>~~|~~|1760<br>~~|~~|pF<br>~~|~~|
|Coss<br>~~a~~<br>~~a~~<br>~~a~~|Output Capacitance<br>~~ee~~||-<br>~~CT~~<br>~~|~~<br>~~|~~<br>~~CT~~|125<br>~~|~~|-<br>~~|~~|pF<br>~~|~~|
|Crss<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~CT~~|100<br>~~|~~|-<br>~~|~~|pF<br>~~|~~|
|Rg<br>~~a~~<br>~~a ~~|Gate Resistance<br> ~~a~~|f=1.0MHz<br>~~CT~~<br>~~a~~|-<br>~~CT~~<br>~~OO~~|1.3<br>~~OO~~|2.6|Ω|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

2.Pulse test 

3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec, 85[o] C/W at steady state. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 

XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

XP4438GYT 

2 

**XP4438GYT** 

**==> picture [420 x 647] intentionally omitted <==**

**----- Start of picture text -----**<br>
60 60<br>T A =25 [o] C 10V T A = 150 [o] C 10V<br>7.0V 7.0V<br>50 6.0V 50 6.0V<br>5.0V 5.0V<br>40 V G = 4.0V 40 V G = 4.0V<br>30 Vy | 30 ye<br>| Yo<br>20 20<br>10 10<br>0 poe) 0 fae<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>18 2.0<br>I D = 5 A I D =11A<br>T A =25 ℃ V G  =10V<br>16<br>1.6<br>14<br>1.2<br>12<br>0.8<br>10<br>8 0.4<br>2 4 6 8 10 -50 0 50 100 150<br>V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>12 1.6<br>I D =250uA<br>10<br>1.2<br>8<br>6 ee T j =150 [o] C T j =25 [o] C 0.8<br>4<br>0.4<br>2<br>0 peg 0.0 EEE<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150<br>V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 5. Forward Characteristic of               Fig 6. Gate Threshold Voltage v.s.<br>          Reverse Diode           Junction Temperature<br> , Drain Current (A)  , Drain Current (A)<br>ID ID<br>Ω ) (m DS(ON)<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**==> picture [178 x 23] intentionally omitted <==**

**----- Start of picture text -----**<br>
              Fig 5. Forward Characteristic of<br>          Reverse Diode<br>**----- End of picture text -----**<br>


**3** 

XP4438GYT 

3 

**XP4438GYT** 

**==> picture [189 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>I D = 7 A<br>V DS =15V<br>8<br>6<br>4<br>2<br>0<br>0 4 8 12 16 20<br>Q G  , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Fig 7. Gate Charge Characteristics** 

**==> picture [188 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
1600 f=1.0MHz<br>1200<br>C iss<br>800<br>400<br>C oss<br>C rss<br>0<br>1 5 9 13 17 21 25 29<br>V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>


**Fig 8. Typical Capacitance Characteristics** 

**==> picture [415 x 391] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 1<br> iceeticsatiasienliondiap tusiimenammainataaienion WRT Ter Duty factor=0.5<br>Operation in this<br>area limited by ana Noes Doin ae TTTtt<br>10 RDS(ON) POX SSN]\ 100us ST 0.2 aaZo<br>0.1<br>PKal cn Sia Sif SY fo rin 0.1 Po 0.05<br>ra No NMS 1ms ain eee<br>1 0.02<br>AU imp 1S OS 10ms fain ZA2<br>0.01<br>NEN SO Gf on PDM (I<br>an NON 100ms 0.01 Single Pulse TN t ll<br>0.1 NN 1s Hee HLS T<br>T A =25 [o] C DC Duty factor = t/TPeak T j  = P DM  x R thja  + T a<br>Setiean setaam eectma Eccemr ainETClie Rthia=85  ℃ /W i(I<br>0.01 Single  Pulse cin i ene 0.001 UE ll<br>0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>               Fig 9. Maximum Safe Operating Area              Fig 10. Effective Transient Thermal<br>        Impedance<br>50 16<br>V DS DS =5V<br>40 T j j =25 [[o]] C T j j =150 [[o]] C<br>12<br>30<br>8<br>20<br>i} i}<br>i} i} 4<br>10 if if<br>i} i}<br>0 Z 0<br>0 1 2 3 4 5 6 25 50 75 100 125 150<br>V GS  , Gate-to-Source Voltage (V) GS  , Gate-to-Source Voltage (V)  , Gate-to-Source Voltage (V) T A  , Ambient Temperature (  [o] C )<br>)thja<br>(A)<br>ID<br>Normalized Thermal Response (R<br> , Drain Current (A)  , Drain Current (A)<br>IDD ID<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area** 

**==> picture [185 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>V DS DS =5V<br>40 T j j =25 [[o]] C T j j =150 [[o]] C<br>30<br>20<br>i} i}<br>i} i}<br>10 if if<br>i} i}<br>0 Z<br>0 1 2 3 4 5 6<br>V GS  , Gate-to-Source Voltage (V) GS  , Gate-to-Source Voltage (V)  , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>IDD<br>**----- End of picture text -----**<br>


**Fig 11. Transfer Characteristics** 

**Fig 12. Drain Current v.s. Ambient Temperature** 

**4** 

XP4438GYT 

4 

**XP4438GYT** 

## ~~) lta~~ **MARKING INFORMATION** 

Part Number meet Rohs requirement for low voltage MOSFET only **4438GYT** | Package Code : YT **YWWSSS** Date Code (YWWSSS) Y ： Last Digit Of  The Year WW ： Week SSS ： Sequence 

**5** 

XP4438GYT 

5 

## **Package  Outline  :  PMPAK 3x3** 

**==> picture [509 x 296] intentionally omitted <==**

**----- Start of picture text -----**<br>
e b2<br>SYMBOLS Millimeters<br>1<br>c 1 = e ea e = --- MIN NOM MAX<br>A 2.90 3.10 3.40<br>g B 2.20 2.45 2.80<br>e 0.60 0.65 0.70<br>c 2 C c 4 b2 0.20 0.30 0.40<br>C 2.90 3.10 3.40<br>Ty c1 0.10 0.30 0.50<br>| j i ; —}--- c2 1.20 1.70  + — 2.20<br>c 3 it es ee<br>a —}--}-+-— c3 0.10 0.38 0.65<br><—_ B —_><br>D 0.65 0.80 1.05<br>A<br>—__ A1 _ —}--- d1 0.00 0.10 + 0.20 —<br>es E 0.10 0.18 0.25<br>ee<br>BOTTOM VIEW es A1 2.900 3.30 3.600<br>ee<br>es c4 2.900 3.30 3.600<br>ee<br>g 0.20 (ref)<br>d1<br>D<br>.<br>| oh E ee ee<br>**----- End of picture text -----**<br>


1.All Dimension Are In Millimeters. 

2.Dimension Does Not Include Mold Protrusions. 

3. Thermal PAD and Pin contour is for reference, it may has little difference by option. 

Draw No.  M1-YT8-G-v06 

PMPAK-3x3(YT) 

6 

**PMPAK 3X3** 

## **PMPAK3X3  FOOTPRINT ：** 

**==> picture [5 x 2] intentionally omitted <==**

**----- Start of picture text -----**<br>
.<br>**----- End of picture text -----**<br>


Draw No. M1-YT8-G-v06 

1 

PMPAK-3x3(YT) 

7