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XP3P010AMT
MOS P -30V -18.5A 10MOHM PMPAK5X6
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: YAGEO XSEMI
- Product type: Single MOSFETs
- SVHC: No SVHC (23-Jan-2024)
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.137 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **XP3P010AMT** ~~[oo~~ **Halogen-Free Product**
_**P-CHANNEL ENHANCEMENT MODE POWER MOSFET**_
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D BVDSS -30V<br>R 10m Ω<br>DS(ON)<br>ID -58A<br>G<br>S<br>**----- End of picture text -----**<br>
- **100% Rg & UIS Test**
- **Simple Drive Requirement**
- **Fast Switching Characteristic**
- **RoHS Compliant & Halogen-Free**
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D<br>D<br>D<br>D<br>S<br>SS G<br>PMPAK [®] 5x6<br>**----- End of picture text -----**<br>
## **Description**
XP3P010A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The PMPAK[®] 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage<br>~~a~~<br>~~a~~|-30|V|
|VGS<br>~~a~~|Gate-Source Voltage<br>~~a~~<br>~~a~~|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|-58|A|
|ID@TC=100℃<br>~~a~~|Drain Current, VGS@ 10V|-37|A|
|ID@TA=25℃<br>~~a~~|Drain Current3, VGS@ 10V|-18.5|A|
|ID@TA=70℃<br>~~a~~|Drain Current3, VGS@ 10V|-14.8|A|
|IDM<br>~~a ~~|Pulsed Drain Current1<br> ~~a~~|-200|A|
|PD@TC=25℃<br>~~a~~|Total Power Dissipation|50|W|
|PD@TA=25℃<br>~~a ~~|Total Power Dissipation<br> ~~a~~|5|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy4|28.8|mJ|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a~~|OperatingJunction Temperature Range|-55 to 150|℃|
## **Thermal Data**
|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|2.5|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|℃/W|
**1**
**202311171YAGEO**
**XP3P010AMT**
## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a~~|Parameter<br>~~se~~|Test Conditions<br>~~se~~|Min.<br>~~se~~|Typ.<br>~~se~~|Max.<br>~~se~~|Units<br>~~se~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=-250uA|-30|-|-|V|
|RDS(ON)<br>~~eee~~|Static Drain-Source On-Resistance2<br>~~eee~~|VGS=-10V, ID=-20A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|10<br>~~eee~~|mΩ<br>~~eee~~|
|||VGS=-4.5V, ID=-12A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|15<br>~~eee~~|mΩ<br>~~eee~~|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=-250uA|-1|-|-3|V|
|gfs|Forward Transconductance|VDS=-10V, ID=-12A|-|38|-|S|
|IDSS<br>~~a a~~<br>~~a~~|Drain-Source Leakage Current<br>~~a~~|VDS=-24V, VGS=0V<br>~~OO~~|-<br>~~OO~~<br>~~GOO~~|-<br>~~OO~~<br>~~GOO~~|-10<br>~~OO~~<br>~~GOO~~|uA<br>~~OO~~|
|IGSS<br>~~a a~~<br>~~a~~|Gate-Source Leakage<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~a~~|-<br>~~a~~<br>~~GOO~~|-<br>~~a~~<br>~~GOO~~|+<br>100<br>~~a~~<br>~~GOO~~|nA<br>~~a~~|
|Qg<br>~~a a~~<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~|ID=-12A<br>VDS=-15V<br>VGS=-4.5V<br>~~a~~<br>~~CT~~<br>~~CT~~<br>~~CT~~|-<br>~~a~~<br>~~GOO~~<br>~~CT~~<br>~~CT~~|34<br>~~a~~<br>~~GOO~~<br>~~CT~~|54.4<br>~~a~~<br>~~GOO~~<br>~~CT~~|nC<br>~~a~~<br>~~CT~~|
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~CT~~<br>~~CT~~|10|-|nC|
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~CT~~<br>~~CT~~<br>~~CT~~|12|-|nC|
|td(on)<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDS=-15V<br>ID=-1A<br>RG=3.3Ω<br>VGS=-10V<br>~~CT~~<br>~~CT~~<br>~~CT~~|-<br>~~CT~~<br>~~CT~~|11|-|ns|
|tr<br>~~a~~<br>~~a~~|Rise Time||-<br>~~CT~~<br>~~Ty~~|9<br>~~Ty~~|-<br>~~Ty~~|ns<br>~~Ty~~|
|td(off)<br>~~a~~|Turn-off DelayTime||-<br>~~Py~~|150<br>~~Py~~|-<br>~~Py~~|ns<br>~~Py~~|
|tf<br>~~a~~<br>~~a~~|Fall Time||-<br>~~Ty~~<br>~~CT~~|70<br>~~Ty~~|-<br>~~Ty~~|ns<br>~~Ty~~|
|Ciss<br>~~a~~|Input Capacitance|VGS=0V<br>VDS=-15V<br>f=1.0MHz<br>~~CT~~|-<br>~~CT~~|3800|6080|pF|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance||-<br>~~CT~~<br>~~pf~~|500<br>~~pf~~|-<br>~~pf~~|pF<br>~~pf~~|
|Crss<br>~~a~~|Reverse Transfer Capacitance||-<br>~~Py~~|345<br>~~Py~~|-<br>~~Py~~|pF<br>~~Py~~|
|Rg<br>~~a OO~~|Gate Resistance<br>~~OO~~|f=1.0MHz<br>~~OO~~|-<br>~~OO~~|9<br>~~OO~~|18<br>~~OO~~|Ω<br>~~OO~~|
## **Source-Drain Diode**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=-20A, VGS=0V|-|-|-1.2|V|
|trr|Reverse Recovery Time|IS=-12A,VGS=0V,<br>dI/dt=100A/µs|-|24|-|ns|
|Qrr|Reverse RecoveryCharge||-|14|-|nC|
## **Notes:**
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec
4.Starting Tj=25[o] C , VDD=-30V , L=0.1mH , RG=25 Ω , VGS=-10V
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**2**
**XP3P010AMT** ~~WSO~~
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200 120<br>T C =25 [o] C -10V T C = 150 [o] C -10V<br>-7.0V -7.0V<br>100<br>160 TALL) -6.0V GEESE -6.0V<br>-5.0V -5.0V<br>// 80 . | ae V G = -4.0V<br>120<br>V G = -4.0V 60<br>80<br>40<br>40<br>PF 20<br>0 PEE) 0 BBREESESE=<br>0 2 4 6 8 10 0 2 4 6 8 10<br>-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)<br> Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>12 2.0<br>I D = -12 A-12 A12 A I D = -20A<br>11 T C =2525 [[o]] C V G = -10V<br>1.6<br>10<br>1.2<br>9<br>0.8<br>8<br>0.4<br>7<br>6 ERS) 0.0 FREES<br>2 4 6 8 10 -100 -50 0 50 100 150<br>-V GS , Gate-to-Source Voltage (V) GS , Gate-to-Source Voltage (V) , Gate-to-Source Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance<br> v.s. Junction Temperature<br>100 2.0<br>I D = -250uA<br>1.6<br>10<br>ot) 1.2 RRR<br>T j =150 j =150 =150 [[o]] C T j =25 j =25 =25 [[o]] C<br>0.8<br>1 CETUS<br>0.4<br>2.01E+09<br>0.1 BEE] 0.0 Ee<br>0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150<br>-V SD , Source-to-Drain Voltage (V) SD , Source-to-Drain Voltage (V) , Source-to-Drain Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.<br> Reverse Diode Junction Temperature<br> , Drain Current (A) , Drain Current (A)<br>D D<br>-I -I<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)-IS-ISS<br>Normalized V<br>**----- End of picture text -----**<br>
**Fig 1. Typical Output Characteristics**
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12<br>I D = -12 A-12 A12 A<br>11 T C =2525 [[o]] C<br>10<br>9<br>8<br>7<br>6 ERS)<br>2 4 6 8 10<br>-V GS , Gate-to-Source Voltage (V) GS , Gate-to-Source Voltage (V) , Gate-to-Source Voltage (V)<br> Fig 3. On-Resistance v.s. Gate Voltage<br>100<br>10<br>ot)<br>T j =150 j =150 =150 [[o]] C T j =25 j =25 =25 [[o]] C<br>1 CETUS<br>0.1 BEE]<br>0 0.2 0.4 0.6 0.8 1 1.2<br>-V SD , Source-to-Drain Voltage (V) SD , Source-to-Drain Voltage (V) , Source-to-Drain Voltage (V)<br> Fig 5. Forward Characteristic of<br> Reverse Diode<br>Ω )<br> (m<br>DS(ON)<br>R<br>(A)-IS-ISS<br>**----- End of picture text -----**<br>
**Fig 3. On-Resistance v.s. Gate Voltage**
**3**
**XP3P010AMT**
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10<br>I D = -12 A<br>V DS = -15V<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60 80<br>Q G , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>
**Fig 7. Gate Charge Characteristics**
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1000<br>100 Operation in this<br>area limited by<br>RDS(ON)<br>10 OOS 100us 1ms e<br>1<br>10ms<br>T C =25 [o] C DC<br>Single Pulse<br>0.1<br>0.1 PS 1 10 100<br>-V DS , Drain-to-Source Voltage (V)<br>(A)<br>D<br>-I<br>**----- End of picture text -----**<br>
**Fig 9. Maximum Safe Operating Area**
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80<br>V DS = -5V<br>60<br>40<br>T j =150 [o] C<br>20 ae a<br>T j =25 [o] C<br>T j = -55 [o] C<br>0<br>0 1 2 3 4 5 6<br>-V GS , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>
**Fig 11. Transfer Characteristics**
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8000 f=1.0MHz<br>6000<br>4000 C iss<br>2000<br>C oss<br>C rss<br>0<br>1 5 9 13 17 21 25 29 33 37<br>-V DS , Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>
**Fig 8. Typical Capacitance Characteristics**
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1<br>Duty factor=0.5<br>0.2<br>0.1 0.1<br>0.05 P DM<br>t<br>fo an<br>T<br>0.02<br>Duty factor = t/T<br>0.01 Peak Tj = PDM x Rthjc + Tc<br>Single Pulse<br>0.01<br>0.00001 ACHICHE 0.0001 0.001 0.01 wal 0.1 1<br>t , Pulse Width (s)<br>)thjc<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
**Fig 10. Effective Transient Thermal Impedance**
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80<br>60<br>40<br>20 See:<br>2011082301<br>0<br>25 50 75 100 125 150<br>T C , Case Temperature ( [o] C )<br> , Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>
**Fig 12. Drain Current v.s. Case Temperature**
**4**
**XP3P010AMT**
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YAGEO<br>2 8060<br>I D = -1mA<br>1.6<br>| 60 ea<br>1.2<br>40<br>Ag pepe<br>0.8<br>20<br>0.4<br>0 aa 0 PASE<br>-100 -50 0 50 100 150 0 50 100<br>T j , Junction Temperature ( [o] C) T C , Case Temperature( C , Case Temperature( , Case Temperature( [[o]] C)<br> Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation<br> Temperature<br>50<br>T j =25 [o] C<br>40<br>30<br>20<br>-4.5V<br>10 V GS = -10V<br>0<br>0 10 20 30 40 50 60<br>-I D , Drain Current (A)<br>DSS<br>Normalized BV<br>, Power Dissipation(W)<br>D<br>P<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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8060 ea<br>40<br>pepe<br>20<br>0 PASE<br>0 50 100 150<br>T C , Case Temperature( C , Case Temperature( , Case Temperature( [[o]] C)<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>
**Fig 15. Typ. Drain-Source on State Resistance**
**5**
**XP3P010AMT**
## ~~) lta~~ **MARKING INFORMATION**
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Part Number<br>3P010A<br>YWWSSS<br>Date Code (YWWSSS)<br> Y ： Last Digit Of The Year<br> WW ： Week<br> SSS ： Sequence<br>**----- End of picture text -----**<br>
**6**
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YAGEO<br>Packa e Outline : PMPAK 5x6<br>g<br>D1<br>D2<br>H<br>i<br>SYMBOLS Millimeters<br>MIN NOM MAX<br>E2 A 0.90 1.10 1.30<br>E1 E b 0.33 0.41 0.51<br>C 0.254(Ref.)<br>mail == D1 4.80 4.90 5.10<br>D2 3.61 4.00 4.40<br>K<br>E 5.80 6.03 6.25<br>L 1 E1 (Ref.) 5.60 5.75 5.90<br>a E2 (Ref.) 3.30 3.55 3.80<br>e b L1<br>e 1.27 BSC<br>BACKSIDE VIEW<br>H 0.35 － 0.90<br>K (Ref.) 1.00 1.275 －<br>α( Reference) L 0.35 0.55 0.75<br>L1 0.06 0.13 0.20<br>α( Ref.) 0° － 12°<br>A .<br>C<br>**----- End of picture text -----**<br>
1.All dimension are in millimeters.
2.Dimension does not include burrs and mold flash/protrusions.
- 3.The outline schematic is not to scale and slightly different from the actual product appearance.
Draw No. M1-MT-8-EIFMRL-G-v08
## **PMPAK 5x6 (E-TYPE)**
## **PMPAK 5X6(E-TYPE) FOOTPRINT** ：
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Draw No. M1-MT-8-EIFMRL-G-v08
Updated at June 9, 2026
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