XP3NR85CMT

## **XP3NR85CMT** ~~[oo~~ **Halogen-Free Product** 

_**N-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

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D BVDSS 30V<br>R 0.85m Ω<br>DS(ON)<br>ID4 100A<br>G<br>S D<br>D<br>D<br>D<br>silicon process<br>and fast<br>an extreme<br>S<br>converters<br>with backside<br>SS G<br>PMPAK [®]  5x6<br>**----- End of picture text -----**<br>


▼ **100% Rg & UIS Test** 

- **Simple Drive Requirement** 

- **Ultra Low On-resistance** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP3NR85C series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK[®] 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage<br>~~a~~|30|V|
|VGS<br>~~a~~|Gate-Source Voltage<br>~~a~~<br>~~a~~|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V4(Silicon Limited)<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|275|A|
|ID@TC=25℃<br>~~a~~|Drain Current, VGS@ 10V4<br>~~a~~<br>~~a~~|100|A|
|ID@TA=25℃<br>~~a~~|Drain Current, VGS@ 10V3|60|A|
|ID@TA=70℃<br>~~a ~~|Drain Current, VGS@ 10V3<br> ~~a~~|49|A|
|IDM<br>~~a~~|Pulsed Drain Current1|650|A|
|PD@TC=25℃<br>~~a ~~|Total Power Dissipation<br> ~~a~~|104|W|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation3|5|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy5|125|mJ|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a ~~|OperatingJunction Temperature Range<br> ~~ee~~|-55 to 150<br>~~ee~~|℃<br>~~ee~~|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|1.2|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|℃/W|



**1** 

**202401231YAGEO** 

**XP3NR85CMT** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS<br>~~ee~~|Drain-Source Breakdown Voltage<br>~~ee~~|VGS=0V, ID=10mA<br>~~ee~~|30<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|V<br>~~ee~~<br>~~eee~~|
|RDS(ON)<br>~~ee~~|Static Drain-Source On-Resistance2<br>~~ee~~|VGS=10V, ID=20A<br>~~ee~~|-<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|0.85<br>~~ee~~<br>~~eee~~|mΩ<br>~~ee~~<br>~~eee~~|
|||VGS=4.5V, ID=20A<br>~~ee~~|-<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|1.15<br>~~ee~~<br>~~eee~~|mΩ<br>~~ee~~<br>~~eee~~|
|VGS(th)<br>~~ee~~|Gate Threshold Voltage<br>~~ee~~|VDS=VGS, ID=250uA<br>~~ee~~|0.9<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|2.2<br>~~ee~~<br>~~eee~~|V<br>~~ee~~<br>~~eee~~|
|gfs<br>~~a~~|Forward Transconductance|VDS=10V, ID=20A<br>~~**O**O~~|-<br>~~O~~|135<br>~~O~~|-|S|
|IDSS<br>~~a~~<br>~~a~~|Drain-Source Leakage Current<br>~~a~~|VDS=20V, VGS=0V<br>~~a~~<br>~~**O**O~~|-<br>~~a~~<br>~~O~~|-<br>~~a~~<br>~~O~~|10<br>~~a~~|uA<br>~~a~~|
|IGSS<br>~~a~~<br>~~a~~|Gate-Source Leakage|VGS=+<br>20V, VDS=0V<br>~~**O**O~~|-<br>~~O~~<br>~~O~~<br>~~es~~|-<br>~~O~~<br>~~O~~|+<br>100<br>~~O~~|nA|
|Qg<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge|ID=20A<br>VDS=15V<br>VGS=4.5V<br>~~**O**O~~|-<br>~~O~~<br>~~O~~<br>~~es~~<br>~~es~~|75<br>~~O~~<br>~~O~~|120<br>~~O~~|nC|
|Qgs<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|16|-|nC|
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|38|-|nC|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDS=15V<br>ID=1A<br>RG=3.3Ω<br>VGS=10V|-<br>~~es~~<br>~~es~~<br>~~es~~|17|-|ns|
|tr<br>~~a~~<br>~~a~~<br>~~a~~|Rise Time||-<br>~~es~~<br>~~es~~<br>~~es~~|17|-|ns|
|td(off)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime||-<br>~~es~~<br>~~es~~<br>~~es~~|115|-|ns|
|tf<br>~~a~~<br>~~a~~<br>~~a~~|Fall Time||-<br>~~es~~<br>~~es~~<br>~~es~~|80|-|ns|
|Ciss<br>~~a~~<br>~~a~~<br>~~a~~|Input Capacitance|VGS=0V<br>VDS=15V<br>f=1.0MHz|-<br>~~es~~<br>~~es~~<br>~~es~~|7300|11680|pF|
|Coss<br>~~a~~<br>~~a~~<br>~~a~~|Output Capacitance||-<br>~~es~~<br>~~es~~<br>~~es~~|1300|-|pF|
|Crss<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance||-<br>~~es~~<br>~~es~~|760|-|pF|
|Rg<br>~~a~~<br>~~a a~~|Gate Resistance<br>~~a~~|f=1.0MHz|-<br>~~es~~|1.3|2.6|Ω|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|IS|Source Current(BodyDiode)||-|-|60|A|
|VSD|Forward On Voltage2|IS=20A, VGS=0V|-|-|1.2|V|
|trr|Reverse Recovery Time|IS=20A,VGS=0V,<br>dI/dt=100A/µs|-|40|-|ns|
|Qrr|Reverse RecoveryCharge||-|30|-|nC|



## **Notes:** 

- 1.Pulse width limited by Max. junction temperature. 

- 2.Pulse test 

- 3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec; 60[o] C/W at steady state. 

- 4.Package limitation current is 100A . 

- 5.Starting Tj=25[o] C , VDD=25V , L=0.1mH , RG=25 Ω 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP3NR85CMT** 

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240<br>T C =25 [o] C<br>200<br>10V<br>7.0V<br>160 6.0V<br>5.0V<br>120 4.0V<br>V G = 3.0V<br>80<br>40<br>0 an<br>0 1 2 3 4 5 6<br>V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics<br>1.2<br>I D = 20 A<br>T C =25 [o] C<br>1.1<br>1<br>0.9<br>0.8<br>0.7<br>2 pope 4 6 8 10<br>V GS  , Gate-to-Source Voltage (V)<br>              Fig 3. On-Resistance  v.s. Gate Voltage<br>100<br>10<br>T j =150 [o] C T j =25 [o] C<br>1<br>0.1<br>0 0.2 0.4 0.6 0.8 1 1.2<br>V SD  , Source-to-Drain Voltage (V)<br> , Drain Current (A)<br>ID<br>Ω )<br> (m<br>DS(ON)<br>R<br>(A)IS<br>**----- End of picture text -----**<br>


**Fig 5. Forward Characteristic of Reverse Diode** 

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200<br>T C = 150 [o] C<br>10V<br>160 7.0V<br>6.0V<br>5.0V<br>120 4.0V<br>V G = 3.0V<br>80<br>40<br>0<br>0 1 2 3 4 5 6<br>V DS  , Drain-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 2. Typical Output Characteristics** 

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1.8<br>I D =20A<br>V G =10V<br>1.6<br>BSE EE<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6 a<br>-100 ae -50 0 50 100 150<br>T j  , Junction Temperature ( [o] C)<br>              Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>2.0<br>I D =1mA<br>1.6<br>1.2<br>0.8<br>0.4<br>0.0<br>-100 -50 0 50 100 150<br>T j  , Junction Temperature ( [o] C)<br>DS(ON)<br>Normalized R<br>GS(th)<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 6. Gate Threshold Voltage v.s. Junction Temperature** 

**3** 

**XP3NR85CMT** 

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8 10000 f=1.0MHz<br>I D = 20 A<br>V DS =15V<br>8000<br>6 ceREbe Prep<br>i} i} C iss<br>i} i} i}<br>6000<br>i} i} i}<br>4 -FO -4-4-4--5-4--<br>4000 N i} i} i } }<br>2<br>2000<br>C oss<br>C rss<br>0 0 peek<br>0 20 40 60 80 100 120 1 5 9 13 17 21 25 29<br>Q G  , Total Gate Charge (nC) V DS  , Drain-to-Source Voltage (V)<br>              Fig 7. Gate Charge Characteristics              Fig 8. Typical Capacitance Characteristics<br>1000 1<br>10us<br>Serre pessierencer renee TL<br>Operation in thisarea limited by Duty factor=0.5<br>RDS(ON) ATURENTT ine BE AE 7/400cenit mam<br>100<br>eer NON N _ EB)<br>=Earay 0.2 A<br>=> PaIeaae See eain se nea —“Yf<br>100us 0.1<br>10 0.1<br>0.05<br>NNaap amb aan 1ms Zan 0.02 AE P DM il<br>t<br>ae = 4 aa cone oe 0.01 r/c NLL T<br>1 eet eee\. 10ms eeLidl Fae A le! nil<br>TEATOAaPTTaTon—~-LItuu-LItUUIE T C =25 [o] C ~-tijtuuuLoita uuib—DT Tao4 od4 Lit TIa! DC TITtitt Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + Tc<br>Single  Pulse i} It i} i} Till tt i} It Ltt i} i} titi Lidl<br>0.1 0.01<br>0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

**Fig 8. Typical Capacitance Characteristics** 

**Fig 9. Maximum Safe Operating Area** 

**Fig 10. Effective Transient Thermal Impedance** 

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300<br>250<br>PS<br>= ~<br>200<br>~™~<br> ~<br>150<br>Limited by package<br>100<br>50<br>0<br>25 50 75 100 125 150<br>T C  , Case Temperature (  [o] C )<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 11. Drain Current v.s. Case Temperature** 

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160<br>V DS =5V<br>|<br>120 |<br>80<br>T j =150 [o] C<br>40<br>T j =25 [o] C<br>T j = -55 [o] C<br>0<br>0 1 2 3 4 5<br>V GS , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 12. Transfer Characteristics** 

**4** 

**XP3NR85CMT** 

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2<br>I D  =1mA<br>1.6<br>Ee<br>1.2 Peep<br>ae<br>0.8<br>0.4<br>0<br>-100 -50 0 50 100 150<br>T  j  , Junction Temperature ( [o] C)<br>DSS<br>Normalized BV<br>**----- End of picture text -----**<br>


**Fig 13. Normalized BVDSS  v.s. Junction Temperature** 

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120<br>100<br>80 EES<br>,<br>60 ESS<br>40<br>Sof Np<br>200 pfPoo<br>0 50 100 150<br>T C , Case Temperature( [o] C)<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Fig 14. Total Power Dissipation** 

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4<br>T j =25 [o] C<br>3<br>2<br>4.0V<br>1 4.5V<br>5.0V<br>V GS =10V<br>0 annnnnnEe<br>0 20 40 60 80 100<br>I D  , Drain Current (A)<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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              Fig 15. Typ. Drain-Source on State<br>            Resistance<br>**----- End of picture text -----**<br>


**5** 

**XP3NR85CMT** 

## **MARKING INFORMATION** 

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Part Number<br>3NR85C<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

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YAGEO<br>Packa e  Outline  :  PMPAK 5x6<br>g<br>D1<br>D2<br>H<br>i<br>SYMBOLS Millimeters<br>MIN NOM MAX<br>E2 A 0.90 1.10 1.30<br>E1 E b 0.33 0.41 0.51<br>C 0.254(Ref.)<br>mail == D1 4.80 4.90 5.10<br>D2 3.61 4.00 4.40<br>K<br>E 5.80 6.03 6.25<br>L 1 E1 (Ref.) 5.60 5.75 5.90<br>a E2 (Ref.) 3.30 3.55 3.80<br>e b L1<br>e 1.27 BSC<br>BACKSIDE VIEW<br>H 0.35 － 0.90<br>K (Ref.) 1.00 1.275 －<br>α( Reference) L 0.35 0.55 0.75<br>L1 0.06 0.13 0.20<br>α( Ref.) 0° － 12°<br>A .<br>C<br>**----- End of picture text -----**<br>


1.All dimension are in millimeters. 

2.Dimension does not include burrs and mold flash/protrusions. 

- 3.The outline schematic is not to scale and slightly different from the actual product appearance. 

Draw No.  M1-MT-8-EIFMRL-G-v08 

## **PMPAK 5x6 (E-TYPE)** 

## **PMPAK 5X6(E-TYPE)  FOOTPRINT** ： 

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Draw No.  M1-MT-8-EIFMRL-G-v08