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XP3N9R5MT
MOS N 30V 17.7A 9.5MOHM PMPAK5X6
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- Manufacturer: YAGEO XSEMI
- Product type: Single MOSFETs
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.105 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **XP3N9R5MT** ~~Po~~ **Halogen-Free Product**
## _**N-CHANNEL ENHANCEMENT MODE**_
_**POWER MOSFET**_
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**----- Start of picture text -----**<br>
D BVDSS 30V<br>RDS(ON) 9.5m Ω<br>G<br>S D<br>D<br>D<br>D<br>process<br>and fast<br>an extreme<br>S<br>converters<br>SS G<br>with backside PMPAK [®] 5x6<br>**----- End of picture text -----**<br>
- **100% Rg & UIS Test**
- **Simple Drive Requirement**
- **Low On-resistance**
- **RoHS Compliant & Halogen-Free**
## **Description**
XP3N9R5 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The PMPAK[®] 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile.
## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~es~~<br>~~es~~|Parameter|Rating|Units|
|---|---|---|---|
|VDS<br>~~es~~<br>~~es~~<br>~~es~~|Drain-Source Voltage<br>~~en~~|30<br>~~en~~|V<br>~~en~~|
|VGS<br>~~es~~<br>~~es~~|Gate-Source Voltage<br>~~en~~|+<br>20<br>~~en~~|V<br>~~en~~|
|ID@TC=25℃<br>~~es~~<br>~~es~~<br>~~es~~|Drain Current, VGS@ 10V<br>~~en~~<br>|37.8<br>~~en~~<br>|A<br>~~en~~<br>|
|ID@TC=100℃<br>~~es~~<br>~~es~~|Drain Current, VGS@ 10V<br>|24<br>|A<br>|
|ID@TA=25℃<br>~~esI~~<br>~~es~~|Drain Current, VGS@ 10V3<br>~~I~~|17.7<br>~~I~~|A<br>~~I~~|
|ID@TA=70℃<br>~~es~~<br>~~es~~|Drain Current, VGS@ 10V3|14.2|A|
|IDM<br>~~es~~<br>~~es~~<br>~~es~~|Pulsed Drain Current1|120|A|
|PD@TC=25℃<br>~~es~~<br>~~es~~<br>~~es~~|Total Power Dissipation<br>|22.7<br>|W<br>|
|PD@TA=25℃<br>~~es~~<br>~~es~~|Total Power Dissipation3<br>|5<br>|W<br>|
|EAS<br>~~esa~~|Single Pulse Avalanche Energy4<br>~~a~~|16.2<br>~~a~~|mJ<br>~~a~~|
|TSTG<br>~~I~~<br>~~es~~|Storage Temperature Range<br>~~I~~|-55 to 150<br>~~I~~|℃<br>~~I~~|
|TJ<br>~~es~~|OperatingJunction Temperature Range|-55 to 150|℃|
## **Thermal Data**
|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|5.5|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|℃/W|
**1**
**202310111YAGEO**
**XP3N9R5MT**
## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)**
|Symbol<br>~~a~~|Parameter<br>~~se~~|Test Conditions<br>~~se~~|Min.<br>~~se~~|Typ.<br>~~se~~|Max.<br>~~se~~|Units<br>~~se~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=250uA|30|-|-|V|
|RDS(ON)<br>~~eee~~|Static Drain-Source On-Resistance2<br>~~eee~~|VGS=10V, ID=9.5A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|9.5<br>~~eee~~|mΩ<br>~~eee~~|
|||VGS=4.5V, ID=9A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|13.5<br>~~eee~~|mΩ<br>~~eee~~|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250uA|1.3|-|2.3|V|
|gfs|Forward Transconductance|VDS=5V, ID=9.5A|-|35|-|S|
|IDSS<br>~~a a~~<br>~~a~~|Drain-Source Leakage Current<br>~~a~~|VDS=24V, VGS=0V<br>~~OO~~|-<br>~~OO~~<br>~~GOO~~|-<br>~~OO~~<br>~~GOO~~|10<br>~~OO~~<br>~~GOO~~|uA<br>~~OO~~|
|IGSS<br>~~a a~~<br>~~a~~|Gate-Source Leakage<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~a~~|-<br>~~a~~<br>~~GOO~~|-<br>~~a~~<br>~~GOO~~|+<br>100<br>~~a~~<br>~~GOO~~|nA<br>~~a~~|
|Qg<br>~~a a~~<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~|ID=9.5A<br>VDS=15V<br>VGS=10V<br>~~a~~<br>~~CT~~<br>~~CT~~<br>~~CT~~|-<br>~~a~~<br>~~GOO~~<br>~~CT~~<br>~~CT~~|24<br>~~a~~<br>~~GOO~~<br>~~CT~~|38.4<br>~~a~~<br>~~GOO~~<br>~~CT~~|nC<br>~~a~~<br>~~CT~~|
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~CT~~<br>~~CT~~|4|-|nC|
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~CT~~<br>~~CT~~<br>~~CT~~|6|-|nC|
|td(on)<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDS=15V<br>ID=9.5A<br>RG=3Ω<br>VGS=10V<br>~~CT~~<br>~~CT~~<br>~~CT~~<br>~~CT~~|-<br>~~CT~~<br>~~CT~~|9|-|ns|
|tr<br>~~a~~<br>~~a~~<br>~~a~~|Rise Time||-<br>~~CT~~<br>~~Ty~~<br>~~CT~~|30<br>~~Ty~~|-<br>~~Ty~~|ns<br>~~Ty~~|
|td(off)<br>~~a~~<br>~~a~~|Turn-off DelayTime||-<br>~~CT~~<br>~~CT~~|23|-|ns|
|tf<br>~~a~~<br>~~a~~|Fall Time||-<br>~~CT~~<br>~~CT~~|5|-|ns|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance|VGS=0V<br>VDS=15V<br>f=1.0MHz<br>~~CT~~|-<br>~~CT~~<br>~~Pr~~|1000<br>~~Pr~~|1600<br>~~Pr~~|pF<br>~~Pr~~|
|Coss<br>~~a~~|Output Capacitance||-<br>~~pf~~|155<br>~~pf~~|-<br>~~pf~~|pF<br>~~pf~~|
|Crss<br>~~a~~|Reverse Transfer Capacitance||-<br>~~Py~~|120<br>~~Py~~|-<br>~~Py~~|pF<br>~~Py~~|
|Rg<br>~~a OO~~|Gate Resistance<br>~~OO~~|f=1.0MHz<br>~~OO~~|-<br>~~OO~~|1.6<br>~~OO~~|3.2<br>~~OO~~|Ω<br>~~OO~~|
## **Source-Drain Diode**
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|IS|Source Current(BodyDiode)||-|-|37|A|
|VSD|Forward On Voltage2|IS=9.5A, VGS=0V|-|-|1.2|V|
|trr|Reverse Recovery Time|IS=9.5A,VGS=0V,<br>dI/dt=100A/µs|-|11|-|ns|
|Qrr|Reverse RecoveryCharge||-|4|-|nC|
## **Notes:**
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec ; 60[o] C/W at steady state.
4.Starting Tj=25[o] C , VDD=30V , L=0.1mH , RG=25 Ω , VGS=10V
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**2**
**XP3N9R5MT**
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120<br>T C =25 [o] C 10V<br>7.0V<br>100 6.0V<br>5.0V<br>80<br>V G = 4.0V<br>60<br>40<br>20<br>0<br>0 2 4 6 8<br>V DS , Drain-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Fig 1. Typical Output Characteristics**
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11<br>I D = 9 A<br>T C =25 [o] C<br>10<br>9<br>8<br>7<br>6<br>2 4 6 8 10<br>V GS , Gate-to-Source Voltage (V)<br> Fig 3. On-Resistance v.s. Gate Voltage<br>10<br>8<br>6 T j =150 [o] C T j =25 [o] C<br>4<br>2<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>V SD , Source-to-Drain Voltage (V)<br>Ω )<br> (m<br>DS(ON)<br>R<br>(A)IS<br>**----- End of picture text -----**<br>
**Fig 3. On-Resistance v.s. Gate Voltage**
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Fig 5. Forward Characteristic of<br> Reverse Diode<br>**----- End of picture text -----**<br>
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80<br>T C = 150 [o] C 10V<br>7.0V<br>6.0V<br>60 5.0V<br>V G = 4.0V<br>40<br>20<br>0<br>0 1 2 3 4 5<br>V DS , Drain-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Fig 2. Typical Output Characteristics**
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2.0<br>I D =9.5A<br>V G =10V<br>1.6<br>1.2<br>0.8<br>0.4<br>-100 -50 0 50 100 150<br>T j , Junction Temperature ( [o] C)<br>DS(ON)<br>Normalized R<br>**----- End of picture text -----**<br>
**Fig 4. Normalized On-Resistance v.s. Junction Temperature**
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2.0<br>I D =250uA<br>1.6<br>1.2<br>0.8<br>0.4<br>0.0<br>-100 -50 0 50 100 150<br>T j , Junction Temperature ( [o] C)<br>GS(th)<br>Normalized V<br>**----- End of picture text -----**<br>
**Fig 6. Gate Threshold Voltage v.s.**
**Junction Temperature**
**3**
**XP3N9R5MT**
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12<br>I D = 9.5 A<br>10 V DS =15V<br>8<br>6<br>4<br>2<br>0<br>0 fo 10 20 30<br>Q G , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
**Fig 7. Gate Charge Characteristics**
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2000 f=1.0MHz<br>1600<br>1200<br>C iss<br>800<br>400<br>C oss<br>C rss<br>0 SSE<br>1 SS 5 9 13 17 21 25 29 33 37<br>C (pF)<br>**----- End of picture text -----**<br>
_**V DS , Drain-to-Source Voltage (V)**_
**Fig 8. Typical Capacitance Characteristics**
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1000 1<br>Duty factor=0.5<br>Operation in this<br>100 area limited by<br>RDS(ON)<br>0.2<br>10 0.1 0.1<br>0.05 P DM<br>t<br>ee ie NN 100us PP 0.02 UY T<br>1 0.01<br>T C =25 [o] C 10ms1ms Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + Tc<br>apy eee eee cee a<br>Single Pulse DC<br>0.1 0.01<br>0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1<br>V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)<br> Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance<br>50 50<br>V DS =5V<br>40 40 ee<br>eee oe<br>30 30<br>20 20<br>T j =150 [o] C<br>10 10 T j =25 [o] C<br>T j = -55 [o] C<br>0 0<br>25 50 75 100 125 150 0 1 2 3 4 5<br>T C , Case Temperature ( , Case Temperature ( [[o]] C ) V GS , Gate-to-Source Voltage (V)<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br> , Drain Current (A)<br>D ID<br>**----- End of picture text -----**<br>
**Fig 9. Maximum Safe Operating Area**
**Fig 10. Effective Transient Thermal Impedance**
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50<br>40<br>30<br>20<br>10<br>0<br>25 50 75 100 125 150<br>T C , Case Temperature ( [[o]] C )<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Fig 11. Drain Current v.s. Case Temperature**
**Fig 12. Transfer Characteristics**
**4**
**XP3N9R5MT**
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2 30<br>I D =1mA<br>1.6<br>20<br>1.2 = SEE<br>0.8<br>10<br>0.4<br>0 A) 0 E auensBS<br>-100 -50 0 50 100 150 0 50 100 150<br>T j , Junction Temperature ( [o] C) T C , Case Temperature( [o] C)<br> Fig 13. Normalized BVDSS v.s. JunctionDSS v.s. Junction v.s. Junction Fig 14. Total Power Dissipation<br> Temperature<br>50<br>T j =25 [o] C<br>40<br>30<br>20<br>10 4.5V<br>V GS =10V<br>0 See<br>0 20 40 60 80<br>I D , Drain Current (A)<br>DSS<br>Normalized BV<br>, Power Dissipation(W)<br>D<br>P<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
**Fig 13. Normalized BVDSS v.s. JunctionDSS v.s. Junction v.s. Junction**
**Fig 15. Typ. Drain-Source on State Resistance**
**5**
**XP3N9R5MT**
## **MARKING INFORMATION**
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Part Number<br>3N9R5<br>YWWSSS<br>Date Code (YWWSSS)<br> Y ： Last Digit Of The Year<br> WW ： Week<br> SSS ： Sequence<br>**----- End of picture text -----**<br>
**6**
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YAGEO<br>Packa e Outline : PMPAK 5x6<br>g<br>D1<br>D2<br>H<br>i<br>SYMBOLS Millimeters<br>MIN NOM MAX<br>E2 A 0.90 1.10 1.30<br>E1 E b 0.33 0.41 0.51<br>C 0.254(Ref.)<br>mail == D1 4.80 4.90 5.10<br>D2 3.61 4.00 4.40<br>K<br>E 5.80 6.03 6.25<br>L 1 E1 (Ref.) 5.60 5.75 5.90<br>a E2 (Ref.) 3.30 3.55 3.80<br>e b L1<br>e 1.27 BSC<br>BACKSIDE VIEW<br>H 0.35 － 0.90<br>K (Ref.) 1.00 1.275 －<br>α( Reference) L 0.35 0.55 0.75<br>L1 0.06 0.13 0.20<br>α( Ref.) 0° － 12°<br>A .<br>C<br>**----- End of picture text -----**<br>
1.All dimension are in millimeters.
2.Dimension does not include burrs and mold flash/protrusions.
- 3.The outline schematic is not to scale and slightly different from the actual product appearance.
Draw No. M1-MT-8-EIFMRL-G-v08
## **PMPAK 5x6 (E-TYPE)**
## **PMPAK 5X6(E-TYPE) FOOTPRINT** ：
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. |<br>**----- End of picture text -----**<br>
Draw No. M1-MT-8-EIFMRL-G-v08
Updated at June 9, 2026
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