XP3N5R0YT

## **XP3N5R0YT** ~~[oo~~ **Halogen-Free Product** 

## _**N-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

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D BVDSS 30V<br>RDS(ON) 5m Ω<br>G D<br>D<br>S D<br>D<br>process<br>and fast<br>S<br>an extreme<br>SS G<br>**----- End of picture text -----**<br>


## ▼ **Simple Drive Requirement** 

- **Small Size & Ultra_Low RDS(ON)** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP3N5R0 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

**PMPAK[®] 3 x 3** 

The PMPAK[®] 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage<br>~~a~~<br>~~a~~|30|V|
|VGS<br>~~a~~|Gate-Source Voltage<br>~~a~~<br>~~a~~|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V4<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|40|A|
|ID@TA=25℃<br>~~a~~|Drain Current, VGS@ 10V3|19.5|A|
|ID@TA=70℃<br>~~a~~|Drain Current, VGS@ 10V3|15.6|A|
|IDM<br>~~a~~|Pulsed Drain Current1|120|A|
|PD@TA=25℃<br>~~a ~~|Total Power Dissipation<br> ~~a~~|3.12|W|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a ~~|OperatingJunction Temperature Range<br> ~~ee~~|-55 to 150<br>~~ee~~|℃<br>~~ee~~|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|4|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|40|℃/W|



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**202310111YAGEO** 

XP3N5R0YT 

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**XP3N5R0YT** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~se~~|Test Conditions<br>~~se~~|Min.<br>~~se~~|Typ.<br>~~se~~|Max.<br>~~se~~|Units<br>~~se~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=1mA|30|-|-|V|
|RDS(ON)<br>~~eee~~|Static Drain-Source On-Resistance2<br>~~eee~~|VGS=10V, ID=19A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|5<br>~~eee~~|mΩ<br>~~eee~~|
|||VGS=4.5V, ID=12A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|8<br>~~eee~~|mΩ<br>~~eee~~|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250uA|1.3|-|2.3|V|
|gfs|Forward Transconductance|VDS=5V, ID=19A|-|69|-|S|
|IDSS<br>~~a a~~<br>~~a~~|Drain-Source Leakage Current<br>~~a~~|VDS=24V, VGS=0V<br>~~OO~~|-<br>~~OO~~<br>~~GOO~~|-<br>~~OO~~<br>~~GOO~~|10<br>~~OO~~<br>~~GOO~~|uA<br>~~OO~~|
|IGSS<br>~~a a~~<br>~~a~~|Gate-Source Leakage<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~a~~|-<br>~~a~~<br>~~GOO~~|-<br>~~a~~<br>~~GOO~~|+<br>100<br>~~a~~<br>~~GOO~~|nA<br>~~a~~|
|Qg<br>~~a a~~<br>~~a~~|Total Gate Charge<br>~~a~~|ID=16A<br>VDS=15V<br>VGS=4.5V<br>~~a~~<br>~~CT~~|-<br>~~a~~<br>~~GOO~~<br>~~CT~~|22<br>~~a~~<br>~~GOO~~<br>~~CT~~|35.2<br>~~a~~<br>~~GOO~~<br>~~CT~~|nC<br>~~a~~<br>~~CT~~|
|Qgs<br>~~a~~|Gate-Source Charge||-<br>~~Py~~|7<br>~~Py~~|-<br>~~Py~~|nC<br>~~Py~~|
|Qgd<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~Ty~~<br>~~CT~~|10.5<br>~~Ty~~|-<br>~~Ty~~|nC<br>~~Ty~~|
|td(on)<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDS=15V<br>ID=19A<br>RG=3.3Ω<br>VGS=10V<br>~~CT~~<br>~~CT~~<br>~~CT~~|-<br>~~CT~~<br>~~CT~~|11|-|ns|
|tr<br>~~a~~<br>~~a~~|Rise Time||-<br>~~CT~~<br>~~CT~~|59|-|ns|
|td(off)<br>~~a~~<br>~~a~~|Turn-off DelayTime||-<br>~~CT~~<br>~~Py~~|29<br>~~Py~~|-<br>~~Py~~|ns<br>~~Py~~|
|tf<br>~~a~~<br>~~a~~|Fall Time||-<br>~~Ty~~<br>~~CT~~|13<br>~~Ty~~|-<br>~~Ty~~|ns<br>~~Ty~~|
|Ciss<br>~~a~~|Input Capacitance|VGS=0V<br>VDS=15V<br>f=1.0MHz<br>~~CT~~|-<br>~~CT~~|1900|3040|pF|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance||-<br>~~CT~~<br>~~pf~~|305<br>~~pf~~|-<br>~~pf~~|pF<br>~~pf~~|
|Crss<br>~~a~~|Reverse Transfer Capacitance||-<br>~~Py~~|245<br>~~Py~~|-<br>~~Py~~|pF<br>~~Py~~|
|Rg<br>~~a OO~~|Gate Resistance<br>~~OO~~|f=1.0MHz<br>~~OO~~|-<br>~~OO~~|1.5<br>~~OO~~|3<br>~~OO~~|Ω<br>~~OO~~|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=19A, VGS=0V|-|-|1.2|V|
|trr|Reverse RecoveryTime|IS=20A,VGS=0V,<br>dI/dt=100A/µs|-|15|-|ns|
|Qrr|Reverse RecoveryCharge||-|6|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

- 2.Pulse test 

3.Surface mounted on 1 in[2] 2oz copper pad of FR4 board, t <10sec; 135[o] C/W when mounted on min. copper pad. 

- 4.Maximum current limited by package. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

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XP3N5R0YT 

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**XP3N5R0YT** 

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YAGEO<br>160 120<br>T A =25 [o] C 10V T A = 150 [o] C 10V<br>7.0V 7.0V<br>6.0V 100 6.0V<br>120 5.0V 5.0V<br>80 V G = 4.0V<br>| fo<br>80 V  G  = 4.0V 60<br>40<br>40<br>20<br>0 titipeer 0 eee}—<br>0 1 2 3 4 5 6 0 2 4 6 8<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>7 2.0<br>I D = 16A I D =19A<br>T  A  =25 ℃ V G  =10V<br>6 1.6<br>foun |<br>5 1.2<br>4 0.8<br>3 0.4<br>2 fiesseee 4 6 8 10 -100 PAE -50 0 50 100 150<br>V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>20 2.0<br>I D =250uA D =250uA =250uA<br>16 HELEETE SEE 1.6<br>12 1.2<br>T j =150 [o] C T j =25 [o] C<br>8 0.8<br>4 0.4<br>0 FEUER) 0.0 EEE<br>0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150<br>V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( j  , Junction Temperature (  , Junction Temperature ( [[o]] C)<br> , Drain Current (A)ID  , Drain Current (A)ID<br>Ω ) (m DS(ON)<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

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2.0<br>I D =250uA D =250uA =250uA<br>1.6<br>1.2<br>0.8<br>0.4<br>0.0 EEE<br>-100 -50 0 50 100 150<br>T j  , Junction Temperature ( j  , Junction Temperature (  , Junction Temperature ( [[o]] C)<br>              Fig 6. Gate Threshold Voltage v.s.<br>          Junction Temperature<br>GS(th)<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 5. Forward Characteristic of** 

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          Reverse Diode<br>**----- End of picture text -----**<br>


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XP3N5R0YT 

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**XP3N5R0YT** 

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10 4000 f=1.0MHz<br>I D = 16 A<br>V DS =15V<br>8<br>3000<br>6<br>2000<br>C iss<br>4<br>1000<br>2<br>C oss<br>C rss<br>0 0<br>0 10 20 30 40 50 1 5 9 13 17 21 25 29 33 37<br>Q G  , Total Gate Charge (nC) V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Fig 7. Gate Charge Characteristics** 

## **Fig 8. Typical Capacitance Characteristics** 

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1000 =CESFAHES e R IPRIE = SSSeA = SSS he = Ss DaEs 1 eeomer<br>TEA HARID TFTAFAATAHAIPHAI OAFSAAASPeep SaSTAFF Duty factor=0.5 a<br>100 aoe er ear<br>Operation in this asa gesssa 0.2 il maceal imaa a<br>area limited by<br>R DS(ON) aA NH 0.1<br>10 SS AIG — NN fH = 4 Ja tit 0.1 mii Sf<br>2AT pORIS xNENNetINNY 8 J 100us 0.05 eetSeo erence<br>1 Toi SS SE NAS GINS 1ms 0.02 eTat<br>x=rtraitadi = 5555 NE Net Nae tS att 0.01 aa L<br>0.1 SraoT romp Tttil = 2 roid aa oP titit NENCONTINTANS Sait Vritl 10ms 0.01 Single Pulse WA EE PDM TL t |<br>oe re NSO 100ms Pe be T a<br>=e SHARE Fs Hap = 3 5 FOREN<br>Duty factor = t/T<br>0.01 a NN5 es 1s FCCPEEAE A Peak T <> j  = P DM  x R thja  + T a llll<br>CEAHETHRIFTLAAAAIEFSLEITOOPTTALToOoOP T A =25 [o] C ITTTAAAHHeEaa Dad TSTtaADASAt!stTait DC Rthia=135  ℃ /W<br>0.001 Single  Pulse ee 0.001<br>0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>               Fig 9. Maximum Safe Operating Area    Fig 10. Effective Transient Thermal Impedance<br>100 24<br>V DS =5V<br>20<br>80<br>16<br>60<br>12<br>40<br>8<br>T j =150 [o] C<br>20 T  j =25 [o] C 4<br>T j = -55 [o] C<br>0 0<br>0 1 2 3 4 5 6 25 50 75 100 125 150<br>V GS  , Gate-to-Source Voltage (V) T A  , Ambient Temperature (  [o] C )<br>)thja<br>(A)<br>ID<br>Normalized Thermal Response (R<br> , Drain Current (A)ID  , Drain Current (A)ID<br>**----- End of picture text -----**<br>


## **Fig 9. Maximum Safe Operating Area** 

## **Fig 10. Effective Transient Thermal Impedance** 

**Fig 11. Transfer Characteristics** 

**Fig 12. Drain Current v.s. Ambient Temperature** 

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XP3N5R0YT 

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**XP3N5R0YT** 

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YAGEO<br>2 5<br>I D  =1mA<br>1.6 4<br>1.2 a 3 PE<br>pape) bee<br>0.8 2<br>0.4 1<br>0 EE) 0 PSS<br>-100 -50 0 50 100 150 0 50 100 150<br>T  j  , Junction Temperature ( [o] C) T A , Ambient Temperature( [o] C)<br>              Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction               Fig 14. Total Power Dissipation<br>            Temperature<br>40<br>T j =25 [o] C<br>30<br>20<br>10<br>4.5V<br>V GS =10V<br>0<br>0 20 40 60 80 100<br>I D  , Drain Current (A)<br>DSS<br>Normalized BV<br>, Power Dissipation(W)<br>D<br>P<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction Fig 14. Total Power Dissipation Temperature** 

**Fig 15. Typ. Drain-Source on State Resistance** 

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XP3N5R0YT 

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**XP3N5R0YT** 

## ~~) lta~~ **MARKING INFORMATION** 

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Part Number<br>3N5R0<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


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XP3N5R0YT 

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## **Package  Outline  :  PMPAK 3x3** 

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e b2<br>SYMBOLS Millimeters<br>1<br>c 1 = e ea e = --- MIN NOM MAX<br>A 2.90 3.10 3.40<br>g B 2.20 2.45 2.80<br>e 0.60 0.65 0.70<br>c 2 C c 4 b2 0.20 0.30 0.40<br>C 2.90 3.10 3.40<br>Ty c1 0.10 0.30 0.50<br>| j i ; —}--- c2 1.20 1.70  + — 2.20<br>c 3 it es ee<br>a —}--}-+-— c3 0.10 0.38 0.65<br><—_ B —_><br>D 0.65 0.80 1.05<br>A<br>—__ A1 _ —}--- d1 0.00 0.10 + 0.20 —<br>es E 0.10 0.18 0.25<br>ee<br>BOTTOM VIEW es A1 2.900 3.30 3.600<br>ee<br>es c4 2.900 3.30 3.600<br>ee<br>g 0.20 (ref)<br>d1<br>D<br>.<br>| oh E ee ee<br>**----- End of picture text -----**<br>


1.All Dimension Are In Millimeters. 

2.Dimension Does Not Include Mold Protrusions. 

3. Thermal PAD and Pin contour is for reference, it may has little difference by option. 

Draw No.  M1-YT8-G-v06 

PMPAK-3x3(YT) 

7 

**PMPAK 3X3** 

## **PMPAK3X3  FOOTPRINT ：** 

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Draw No. M1-YT8-G-v06 

1 

PMPAK-3x3(YT) 

8