XP3A020M

**XP3A020M** 

## **Halogen-Free Product** 

_**DUAL N-CHANNEL ENHANCEMENT**_ 

## _**MODE POWER MOSFET**_ 

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▼  Simple Drive Requirement D2 BVDSS 30V<br>D2<br>▼  Low Gate Charge D1D1 RDS(ON) 20m Ω<br>▼  Fast Switching Performance ID3 7.8A<br>G2<br>▼  RoHS Compliant & Halogen-Free e G1S2 o.<br>SO-8 S1<br>Description<br>XP3A020 series are innovated design and silicon process<br>technology to achieve the lowest possible on-resistance and D1 D2<br>fast switching performance. It provides the designer with an<br>extreme efficient device for use in a wide range of power G1 G2<br>applications.<br>S1 S2<br>**----- End of picture text -----**<br>


- **Simple Drive Requirement** 

The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|VDS|Drain-Source Voltage|30|V|
|VGS|Gate-Source Voltage|+<br>20|V|
|ID@TA=25℃|Drain Current, VGS@ 10V3|7.8|A|
|ID@TA=70℃|Drain Current, VGS@ 10V3|6.2|A|
|IDM|Pulsed Drain Current1|20|A|
|PD@TA=25℃|Total Power Dissipation|2|W|
|EAS|Single Pulse Avalanche Energy4|7.2|mJ|
|TSTG|Storage Temperature Range|-55 to 150|℃|
|TJ|OperatingJunction Temperature Range|-55 to 150|℃|



**Thermal Data** Symbol Parameter Value Unit ~~———————~~ Rthj-a Maximum Thermal Resistance, Junction-ambient[3] 62.5 ℃ /W 

**1 202312011YAGEO** 

**XP3A020M** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a ~~|Parameter<br> ~~a~~|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=250uA|30|-|-|V|
|RDS(ON)<br>~~eee~~|Static Drain-Source On-Resistance2<br>~~eee~~|VGS=10V, ID=7A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|20<br>~~eee~~|mΩ<br>~~eee~~|
|||VGS=4.5V, ID=4A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|35<br>~~eee~~|mΩ<br>~~eee~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>|VDS=VGS, ID=1mA<br>|1.4<br>~~ee~~<br>|-<br>~~ee~~<br>|2.5<br>~~ee~~<br>|V<br>|
|gfs<br>~~ee~~<br>~~a~~|Forward Transconductance<br>~~ee~~<br>|VDS=5V, ID=7A<br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~<br>|24<br>~~ee~~<br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~<br>|S<br>~~ee~~<br>|
|IDSS<br>~~ee~~<br>~~a~~|Drain-Source Leakage Current<br>~~ee~~<br>|VDS=24V, VGS=0V<br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~<br>|-<br>~~ee~~<br>~~ee~~<br>|10<br>~~ee~~<br>~~ee~~<br>|uA<br>~~ee~~<br>|
|IGSS<br>~~a OO~~<br>~~a~~|Gate-Source Leakage<br>~~OO~~|VGS=+<br>20V, VDS=0V<br>~~OO~~|-<br>~~ee~~<br>~~OO~~<br>~~es~~|-<br>~~ee~~<br>~~OO~~|+<br>100<br>~~ee~~<br>~~OO~~|nA<br>~~OO~~|
|Qg<br>~~a OO~~<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~OO~~|ID=4A<br>VDS=15V<br>VGS=4.5V<br>~~OO~~|-<br>~~ee~~<br>~~OO~~<br>~~es~~<br>~~es~~|5<br>~~ee~~<br>~~OO~~|8<br>~~ee~~<br>~~OO~~|nC<br>~~OO~~|
|Qgs<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|1.8|-|nC|
|Qgd<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~es~~<br>~~es~~|1.8|-|nC|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDS=15V<br>ID=1A<br>RG=6Ω<br>VGS=10V|-<br>~~es~~<br>~~ee~~<br>~~es~~|7<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~|
|tr<br>~~a~~<br>~~a~~|Rise Time||-<br>~~es~~<br>~~es~~|7|-|ns|
|td(off)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime||-<br>~~es~~<br>~~es~~<br>~~es~~|16|-|ns|
|tf<br>~~a~~<br>~~a~~|Fall Time||-<br>~~es~~<br>~~es~~|4|-|ns|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance|VGS=0V<br>VDS=15V<br>f=1.0MHz|-<br>~~es~~<br>~~ee~~|550<br>~~ee~~|880<br>~~ee~~|pF<br>~~ee~~|
|Coss<br>~~a~~|Output Capacitance||-<br>~~se~~|90<br>~~se~~|-<br>~~se~~|pF<br>~~se~~|
|Crss<br>~~a~~|Reverse Transfer Capacitance||-<br>~~se~~|60<br>~~se~~|-<br>~~se~~|pF<br>~~se~~|
|Rg<br>~~a CC~~|Gate Resistance<br>~~CC~~|f=1.0MHz<br>~~CC~~|-<br>~~CC~~|2.5<br>~~CC~~|5<br>~~CC~~|Ω<br>~~CC~~|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=1.7A, VGS=0V|-|-|1.2|V|
|trr|Reverse RecoveryTime|IS=7A, VGS=0V<br>dI/dt=100A/µs|-|7.5|-|ns|
|Qrr|Reverse RecoveryCharge||-|2|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

2.Pulse test 

3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec ; 135 ℃ /W when mounted on Min. copper pad. 4.Starting Tj=25[o] C , VDD=30V , L=0.1mH , RG=25 Ω 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP3A020M** 

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30 20<br>T A =25 [o] C 7.0V10V T A = 150 [o] C 7.0V 10V<br>6.0V 16 6.0V<br>5.0V 5.0V<br>20 |   V G = 4.0V V G  =4.0V<br>12<br>8<br>10<br>4<br>0 po] 0<br>0 1 2 3 4 0 1 2 3 4<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>25 2.0<br>I D = 4 A I D = 7 A<br>T A =25 [o] C V G = 10 V<br>23 1.6<br>21 1.2<br>19 0.8<br>17 ee] 0.4 fae<br>NN [ane -deeee<br>15 peppy 0.0 fideeeeeeePEE EEE<br>2 4 6 8 10 -100 -50 0 50 100 150<br>V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>8 2<br>I D =250uA<br>1.6<br>6<br>TEE] «=  FEES<br>1.2<br>4 T j =150 [o] C T j =25 [o] C<br>0.8<br>OA) FRE<br>2<br>0.4<br>0 EEE Gia 0 Eon<br>0 Sy 0.2 0.4 AV 0.6 EIES 0.8 1 1.2 1.4 -100 -50 0 50 100 P 150<br>V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br> , Drain Current (A)  , Drain Current (A)<br>ID ID<br>)<br>Ω DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 5. Forward Characteristic of Reverse Diode** 

**Fig 6. Gate Threshold Voltage v.s. Junction Temperature** 

**3** 

**XP3A020M** 

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f=1.0MHz<br>8 1000<br>I D = 4 A<br>V DS =15V<br>800<br>6<br>600<br>C iss<br>4<br>400<br>2<br>200<br>C oss<br>C  rss<br>0 al 0 [=><br>0 2 4 6 8 10 1 5 9 13 17 21 25 29 33 37<br>Q G  , Total Gate Charge (nC) V DS  , Drain-to-Source Voltage (V)<br>              Fig 7. Gate Charge Characteristics               Fig 8. Typical Capacitance Characteristics<br>100 ee ee 1 SSS HE Stator ttt<br>Duty factor=0.5<br>Operation in this area<br>10 limited by R DS(ON)<br>Lune ACESS SORE =F Fro a 0.2 oe 4<br>1 100us 0.1 0.1<br>= Maca oa TOW > De it 1ms ci |e iy<br>0.05 P DM<br>yo ; SOM SSCY ie wy t |<br>SPE TNO AY 10ms Tot PTT 0.02 aA TT ei T |<br>0.1 100ms<br>0.01 Duty factor = t/T<br>Peak Tj = PDM x Rthja + Ta<br>T A =25 [o] C 1s Rthja=135 ℃ /W<br>Single Pulse DC Single Pulse<br>0.01 0.01<br>0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>              Fig 9. Maximum Safe Operating Area       Fig 10. Effective Transient Thermal Impedance<br>2.5 10<br>2 8<br>1.5 6<br>1 = ae 4<br>0.5 2<br>0 0<br>0 50 100 150 25 50 75 100 125 150<br>T A , Ambient Temperature( A , Ambient Temperature( , Ambient Temperature( [[o]] C) T A  , Ambient Temperature (  [o] C )<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>)thja<br>(A)<br>ID<br>Normalized Thermal Response (R<br> , Drain Current (A)<br>ID<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

**Fig 8. Typical Capacitance Characteristics** 

**Fig 9. Maximum Safe Operating Area** 

**Fig 10. Effective Transient Thermal Impedance** 

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2.5<br>2<br>1.5<br>1 = ae<br>0.5<br>0<br>0 50 100 150<br>T A , Ambient Temperature( A , Ambient Temperature( , Ambient Temperature( [[o]] C)<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Fig 11. Total Power Dissipation** 

**Fig 12. Drain Current v.s. Ambient Temperature** 

**4** 

**XP3A020M** 

## **MARKING INFORMATION** 

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Part Number<br>3A020<br>YWWSSS Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**5** 

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Package Outline : SO-8<br>D<br>Millimeters<br>SYMBOLS<br>MIN NOM MAX<br>A 1.35 1.55 1.75<br>8 7 6 5<br>A1 0.05 0.15 0.25<br>B 0.30 0.41 0.51<br>E1 E<br>D 4.80 5.05 5.30<br>E 5.79 6.00 6.20<br>1<br>2 3 4 E1 3.70 3.90 4.10<br>e 1.27 TYP<br>G 0.17 0.21 0.25<br>e F 0.38 0.83 1.27<br>ul l<br>B α 0° 4° 8°<br>A<br>1.All Dimension Are In Millimeters.<br>A1<br>a<br>2.Dimension Does Not Include Mold Protrusions.<br>.<br>G α<br>F<br>**----- End of picture text -----**<br>


Draw No.  M1-M8-G-v03 

**SO-8** 

## **SO-8 FOOTPRINT** ： 

- . 

- +] 

Draw No. M1-M8-G-v03 

1