XP3A010AMT

## **XP3A010AMT** ~~Po~~ **Halogen-Free Product** 

## _**DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET**_ 

## ▼ **Simple Drive Requirement** 

- **Fast Switching Characteristic** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP3A010A series are innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device fo PMPAK ® 5x6 dual pad provide superior thermal performance and is design for surface mount applications. 

**==> picture [198 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
D1 D1 D2 D2 BVDSS  30V<br>RDS(ON) 10.4m Ω<br>|<br>D1<br>D1<br>D2<br>D2<br>S1 G1 S2 G2<br>S1<br>G1<br>S2<br>G2<br>PMPAK [®] 5x6<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|Symbol<br>~~a~~|Parameter|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage|30|V|
|VGS<br>~~a~~|Gate-Source Voltage|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V4|35|A|
|ID@TA=25℃<br>~~a ~~|Drain Current3, VGS@ 10V<br> ~~ee~~|12<br>~~ee~~|A<br>~~ee~~|
|ID@TA=70℃<br>~~a~~|Drain Current3, VGS@ 10V|11.5|A|
|IDM<br>~~a ~~|Pulsed Drain Current1<br> ~~ee~~|50<br>~~ee~~|A<br>~~ee~~|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation|3.57|W|
|TSTG<br>~~a ~~|Storage Temperature Range<br> ~~ee~~|-55 to 150<br>~~ee~~|℃<br>~~ee~~|
|TJ<br>~~a~~|OperatingJunction Temperature Range|-55 to 150|℃|



## **Thermal Data** 

|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|6|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|35|℃/W|



**1** 

**202312011YAGEO** 

**XP3A010AMT** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a ~~|Parameter<br> ~~a~~|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS|Drain-Source Breakdown Voltage|VGS=0V, ID=250uA|30|-|-|V|
|RDS(ON)<br>~~eee~~|Static Drain-Source On-Resistance2<br>~~eee~~|VGS=10V, ID=12A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|10.4<br>~~eee~~|mΩ<br>~~eee~~|
|||VGS=4.5V, ID=7A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|15.3<br>~~eee~~|mΩ<br>~~eee~~|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=1mA|1.45|-|3|V|
|gfs<br>~~ee~~|Forward Transconductance<br>~~ee~~|VDS=5V, ID=10A<br>~~ee~~|-<br>~~ee~~|40<br>~~ee~~|-<br>~~ee~~|S<br>~~ee~~|
|IDSS<br>~~ee~~|Drain-Source Leakage Current<br>~~ee~~|VDS=24V, VGS=0V<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|25<br>~~ee~~|uA<br>~~ee~~|
|IGSS<br>~~a~~<br>~~a~~|Gate-Source Leakage<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~CO~~|-<br>~~CO~~<br>~~es~~|-<br>~~CO~~|+<br>100<br>~~CO~~|nA<br>~~CO~~|
|Qg<br>~~a ~~<br>~~a~~<br>~~a~~|Total Gate Charge<br> ~~a~~|ID=7A<br>VDS=15V<br>VGS=4.5V<br>~~CO~~|-<br>~~CO~~<br>~~es~~<br>~~es~~|14<br>~~CO~~|22.4<br>~~CO~~|nC<br>~~CO~~|
|Qgs<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|4.5|-|nC|
|Qgd<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~es~~<br>~~es~~|5.3|-|nC|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDS=15V<br>ID=1A<br>RG=3.3Ω<br>VGS=10V|-<br>~~es~~<br>~~ee~~<br>~~es~~|9<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~|
|tr<br>~~a~~<br>~~a~~|Rise Time||-<br>~~es~~<br>~~es~~|8|-|ns|
|td(off)<br>~~a~~<br>~~a~~<br>~~**a**~~|Turn-off DelayTime||-<br>~~es~~<br>~~es~~<br>~~es~~|29<br>|-<br>|ns<br>|
|tf<br>~~a~~<br>~~**a**~~|Fall Time||-<br>~~es~~<br>~~es~~|9<br>|-<br>|ns<br>|
|Ciss<br>~~**a**~~<br><br>~~a~~|Input Capacitance<br>|VGS=0V<br>VDS=15V<br>f=1.0MHz<br>~~a~~|-<br>~~esi~~<br>~~es~~|1530<br>~~i~~|2448<br>~~i~~|pF<br>~~i~~|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance<br>~~a~~||-<br>~~aes~~|225|-|pF|
|Crss<br><br>~~a~~|Reverse Transfer Capacitance<br>||-<br>~~es~~<br>~~se~~|160<br>~~se~~|-<br>~~se~~|pF<br>~~se~~|
|Rg<br>~~a CC~~|Gate Resistance<br>~~CC~~|f=1.0MHz<br>~~CC~~|-<br>~~CC~~|2.5<br>~~CC~~|5<br>~~CC~~|Ω<br>~~CC~~|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=2.9A, VGS=0V|-|-|1.2|V|
|trr|Reverse Recovery Time|IS=12A,VGS=0V,<br>dI/dt=100A/µs|-|11|-|ns|
|Qrr|Reverse RecoveryCharge||-|4|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

2.Pulse test 

3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec ; 85 ℃ /W on steady state. 

4.Package limitation current is 12A . 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP3A010AMT** 

**==> picture [418 x 647] intentionally omitted <==**

**----- Start of picture text -----**<br>
50 30<br>T A =25 [o] C 10V T A =150 [o] C 10V<br>7.0V 7.0V<br>40 6.0V 6.0V<br>5.0V 5.0V<br>V  G  = 4.0V 20 V G =4.0V<br>30<br>20<br>10<br>10<br>0 ae 0<br>0 Pre 0.4 0.8 1.2 Pey 1.6 2 0 pee 0.4 0.8 1.2 1.6 2<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>10 2.0<br>I D =7A D =7A =7A I D =12A<br>T A A =25 [[o]] C V  G =10V<br>9 1.6<br>8 1.2<br>PR EE= va<br>7 0.8<br>6 PPS 0.4 GREE<br>2 4 6 8 10 -100 -50 0 50 100 150<br>V GS  , Gate-to-Source Voltage (V) GS  , Gate-to-Source Voltage (V)  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance v.s. Gate Voltage              Fig 4. Normalized On-Resistance<br>         v.s. Junction Temperature<br>12 2.0<br>I D =250uA<br>10<br>1.6<br>8 aE<br>1.2<br>T  j =150 [[o]] C T j =25 j =25 =25 [[o]] C<br>6<br>0.8<br>4<br>0.4<br>2<br>0 0.0<br>0 cE 0.2 0.4 0.6 0.8 1 1.2 -100 po -50 0 50 100 150<br>V SD  SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br>               Fig 5. Forward Characteristic of               Fig 6. Gate Threshold Voltage v.s.<br>          Reverse Diode           Junction Temperature<br> , Drain Current (A)ID  , Drain Current (A)ID<br>DS(ON)<br>Ω )<br> (m<br>RDS(ON)DS(ON) Normalized R<br>GS(th)<br>S<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**==> picture [203 x 425] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>I D =7A D =7A =7A<br>T A A =25 [[o]] C<br>9<br>8<br>PR EE=<br>7<br>6 PPS<br>2 4 6 8 10<br>V GS  , Gate-to-Source Voltage (V) GS  , Gate-to-Source Voltage (V)  , Gate-to-Source Voltage (V)<br>              Fig 3. On-Resistance v.s. Gate Voltage<br>12<br>10<br>8 aE<br>T  j =150 [[o]] C T j =25 j =25 =25 [[o]] C<br>6<br>4<br>2<br>0<br>0 cE 0.2 0.4 0.6 0.8 1 1.2<br>V SD  SD  , Source-to-Drain Voltage (V)<br>               Fig 5. Forward Characteristic of<br>          Reverse Diode<br>Ω )<br> (m<br>RDS(ON)DS(ON)<br>(A)IS<br>**----- End of picture text -----**<br>


**3** 

**XP3A010AMT** 

**==> picture [189 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>I D =7A<br>V DS =15V<br>8<br>6<br>4<br>2<br>0<br>0 8 16 24 32<br>Q G  , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Fig 7. Gate Charge Characteristics** 

**==> picture [190 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 Pecoatain 4esstan ea<br>Operation in this<br>area limited by Toy n4 <* SAN ani —a-bisg<br>RDS(ON)<br>10<br>SEaAAE PY SN<br>Saga tad =4=esea<br>SL AT NS Ny Th Nr<br>100us<br>1 A ee ee<br>ee eee TMS NE IS 5 ay<br>M-+SHSHH Hs a4 eet SO en aen<br>i uu L i} i} L i} 1 \ | | 1ms i} L L<br>aunt ai \- Mk ‘Ee 10ms ba<br>0.1<br>=FS  T E  A SSARE  =25 [o] C [DF] [S5FF] a EETSIESCACNE ca 100ms i} t +<br>1s<br>ee> Single Pulse IomE 212300 \ JyMee 01<br>DC<br>0.01 a pi<br>0.01 0.1 1 10 100<br>V DS  ,Drain-to-Source Voltage (V)<br>(A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area** 

**==> picture [187 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
80<br>V DS =5V T j =25 [o] C T j =150 [o] C<br>60<br>40<br>20<br>0<br>0 1 2 3 4 5 6<br>V GS  , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 11. Transfer Characteristics** 

**==> picture [192 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
3000 f=1.0MHz<br>2000<br>C iss<br>1000<br>C oss<br>C rss<br>0<br>1 5 9 13 17 21 25 29 33 37<br>V DS  ,Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>


## **Fig 8. Typical Capacitance Characteristics** 

**==> picture [193 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 a Duty factor = 0.5 eeeeeTesa Sra ==SSSMATsee<br>0.2<br><A<br>0.1 0.1 CT aaa ||<br>0.05<br>AA<br>0.02 poco ya<br>VY<br>0.01<br>0.01 Single Pulse g PDM t<br>EHEEE WU T Hid<br>Duty factor = t/T<br>Snott os Peak T cor j  = PDM x R thja  + T a<br>Rthja=85 [o] C/W<br>CO ll<br>0.001 PTAA ETT TT ll<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t , Pulse Width (s)<br>)thja<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 10. Effective Transient Thermal Impedance** 

**==> picture [151 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
VG<br>QG<br>4.5V<br>QGS QGD<br>Charge Q<br>**----- End of picture text -----**<br>


**Fig 12. Gate Charge Waveform** 

**4** 

**XP3A010AMT** 

## **MARKING INFORMATION** 

**==> picture [263 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number<br>3A010A<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**5** 

**==> picture [508 x 421] intentionally omitted <==**

**----- Start of picture text -----**<br>
YAGEO<br>Packa e  Outline  :  PMPAK 5x6<br>g<br>D1<br>D2<br>H<br>i<br>SYMBOLS Millimeters<br>MIN NOM MAX<br>E2 A 0.90 1.10 1.30<br>E1 E b 0.33 0.41 0.51<br>C 0.254(Ref.)<br>mail == D1 4.80 4.90 5.10<br>D2 3.61 4.00 4.40<br>K<br>E 5.80 6.03 6.25<br>L 1 E1 (Ref.) 5.60 5.75 5.90<br>a E2 (Ref.) 3.30 3.55 3.80<br>e b L1<br>e 1.27 BSC<br>BACKSIDE VIEW<br>H 0.35 － 0.90<br>K (Ref.) 1.00 1.275 －<br>α( Reference) L 0.35 0.55 0.75<br>L1 0.06 0.13 0.20<br>α( Ref.) 0° － 12°<br>A .<br>C<br>**----- End of picture text -----**<br>


1.All dimension are in millimeters. 

2.Dimension does not include burrs and mold flash/protrusions. 

- 3.The outline schematic is not to scale and slightly different from the actual product appearance. 

Draw No.  M1-MT-8-EIFMRL-G-v08 

## **PMPAK 5x6 (E-TYPE)** 

## **PMPAK 5X6(E-TYPE)  FOOTPRINT** ： 

**==> picture [5 x 26] intentionally omitted <==**

**----- Start of picture text -----**<br>
. |<br>**----- End of picture text -----**<br>


Draw No.  M1-MT-8-EIFMRL-G-v08