XP15NA4R4TL

## **XP15NA4R4TL** ~~[fo~~ **Halogen-Free Product** 

## _**N-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

- **100% Rg & UIS Test** 

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- **Simple Drive Requirement** 

- **Ultra Low On-resistance** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP15NA4R4 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

The TOLL package is a perfect solution for high power density and high power efficiency application. 

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BVDSS 150V<br>RDS(ON) 4.4mΩ<br>D<br>G S TOLL (TL)<br>S S<br>S<br>S<br>S S<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter|Rating|Units|
|---|---|---|---|
|VDS<br>~~a ~~|Drain-Source Voltage<br> ~~ee~~|150<br>~~ee~~|V<br>~~ee~~|
|VGS<br>~~a~~|Gate-Source Voltage|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a ~~|Drain Current, VGS@ 10V<br> ~~ee~~|167<br>~~ee~~|A<br>~~ee~~|
|ID@TC=100℃<br>~~a~~|Drain Current, VGS@ 10V|118|A|
|IDM<br>~~a ~~|Pulsed Drain Current1<br> ~~ee~~|668<br>~~ee~~|A<br>~~ee~~|
|PD@TC=25℃<br>~~a~~|Total Power Dissipation|300|W|
|PD@TA=25℃<br>~~a ~~|Total Power Dissipation3<br> ~~ee~~|3.75<br>~~ee~~|W<br>~~ee~~|
|EAS<br>~~a~~|Single Pulse Avalanche Energy5|612.5|mJ|
|TSTG<br>~~a ~~|Storage Temperature Range<br> ~~ee~~|-55 to 175<br>~~ee~~|℃<br>~~ee~~|
|TJ<br>~~a~~|OperatingJunction Temperature Range|-55 to 175|℃|



## **Thermal Data** 

|Symbol|Parameter|Value|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|0.5|℃/W|
|Rthj-a|Maximum Thermal Resistance, Junction-ambient(PCB mount)3|40|℃/W|



**1** 

**202401241YAGEO** 

**XP15NA4R4TL** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a ee~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.<br>~~ee~~|Typ.<br>~~ee~~|Max.<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~<br>~~a~~<br>~~ee~~|VGS=0V, ID=250uA<br>~~a~~|150|-|-|V|
|RDS(ON)<br>~~a~~<br>~~a~~|Static Drain-Source On-Resistance2<br>~~a~~<br>~~ee~~|VGS=10V, ID=50A|-|-|4.4|mΩ|
|VGS(th)<br>~~aa~~|Gate Threshold Voltage<br>~~ee~~<br>~~ee~~|VDS=VGS, ID=250uA|2|-|4|V|
|gfs<br>~~a~~|Forward Transconductance<br>~~ee~~|VDS=5V, ID=50A|-|125|-|S|
|IDSS<br>~~a~~<br>~~a~~|Drain-Source Leakage Current<br>~~ee~~<br>~~a~~<br>~~a~~|VDS=120V, VGS=0V<br>~~a~~|-|-|25|uA|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~a~~<br>~~a~~|VGS= +<br>20V, VDS=0V<br>~~CO~~|-<br>~~CO~~|-<br>~~CO~~|+<br>0.1<br>~~CO~~|uA<br>~~CO~~|
|Qg<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge4<br>~~a~~<br>~~a ~~|ID=50A<br>VDS=75V<br>VGS=10V<br> ~~CO~~|-<br>~~CO~~<br>~~ee~~<br>~~es~~|159<br>~~CO~~<br>~~ee~~|254.4<br>~~CO~~<br>~~ee~~|nC<br>~~CO~~<br>~~ee~~|
|Qgs<br>~~a~~<br>~~**a**~~|Gate-Source Charge4||-<br>~~es~~<br>~~es~~|40<br>|-<br>|nC<br>|
|Qgd<br>~~a~~<br>~~**a**~~|Gate-Drain("Miller")Charge4||-<br>~~es~~<br>~~es~~|57<br>|-<br>|nC<br>|
|td(on)<br>~~**a**~~<br><br>~~a~~|Turn-on DelayTime4<br>|VDS=75V<br>ID=50A<br>RG=6Ω<br>VGS=10V<br>~~a~~|-<br>~~esi~~<br>~~es~~|35<br>~~i~~|-<br>~~i~~|ns<br>~~i~~|
|tr<br>~~a~~<br>~~a~~<br>~~a~~|Rise Time4<br>~~a~~||-<br>~~aes~~<br>~~**e**s~~|118|-|ns|
|td(off)<br><br>~~a~~<br>~~a~~|Turn-off DelayTime4<br>||-<br>~~es~~<br>~~**e**s~~|104|-|ns|
|tf<br>~~a~~|Fall Time4||-<br>~~**e**s~~|148<br>~~e~~|-<br>~~e~~|ns<br>~~e~~|
|Ciss<br>~~ai~~<br><br>~~a~~|Input Capacitance4<br>~~ai~~<br>|VGS=0V<br>VDS=100V<br>f=1.0MHz<br>~~ai~~<br>~~a~~|-<br>~~ai~~<br>~~**e**s~~|7460 <br>~~ai~~|11936<br>~~ai~~|pF<br>~~ai~~|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance4<br>~~a~~||-<br>~~a~~~~**e**s~~|580|-|pF|
|Crss<br><br>~~a~~|Reverse Transfer Capacitance4<br>||-<br>~~**e**s~~|20<br>~~e~~|-<br>~~e~~|pF<br>~~e~~|
|Rg<br>~~a~~|Gate Resistance<br>~~a~~|f=1.0MHz|-|0.6|1.2|Ω|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=50A, VGS=0V|-|-|1.3|V|
|trr|Reverse RecoveryTime4|IS=50A, VGS=0V<br>dI/dt=100A/µs|-|100|-|ns|
|Qrr|Reverse RecoveryCharge4||-|325|-|nC|



## **Notes:** 

- 1.Pulse width limited by Max. junction temperature. 

- 2.Pulse test 

- 3.Surface mounted on 1 in[2] copper pad of FR4 board 

- 4.Guaranteed by design. 

- 5.Starting Tj=25[o] C , VDD=50V , L=1mH , RG=25Ω , VGS=10V 

- 6.These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175[o] C. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP15NA4R4TL** 

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700<br>T  C  =25 [o] C 10V<br>600 9.0V<br>8.0V<br>500<br>7.0V<br>400<br>V  GS =6.0V<br>300 Ae<br>200 f |<br>100<br>0 fa<br>0 4 8 12 16 20<br>V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics<br>6.4<br>I D = 5 0A<br>T C =25 [o] C<br>5.4<br>4.4<br>3.4 Shes}<br>5 6 7 8 9 10<br>V GS  Gate-to-Source Voltage (V)<br>             Fig 3. On-Resistance  v.s. Gate Voltage<br>100<br>10<br>Hava T j =175 [o] C T j =25 [o] C<br>a<br>1<br>0.1<br>0 0.2 0.4 0.6 0.8 1 1.2<br>V SD  , Source-to-Drain Voltage (V)<br> , Drain Current (A)<br>ID<br>Ω )<br> (m<br>DS(ON)<br>R<br>(A)IS<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

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                  Fig 5. Forward Characteristic of<br>              Reverse Diode<br>**----- End of picture text -----**<br>


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210<br>10V<br>180 T  C  =175 [o] C 9.0V<br>8.0V<br>7.0V<br>150 V GS =6.0V<br>120<br>90<br>60 |<br>30<br>0 EEE<br>0 2 4 6 8<br>V DS  , Drain-to-Source Voltage (V)<br>           Fig 2. Typical Output Characteristics<br>2.8<br>I  D = 5 0A<br>2.4 V GS  =10V<br>2<br>1.6<br>1.2<br>0.8<br>0.4 Leva<br>-100 -50 0 50 100 150 200<br>T j  , Junction Temperature ( [o] C)<br>            Fig 4. Normalized On-Resistance<br>         v.s. Junction Temperature<br>2<br>I D =1mA<br>1.6<br>1.2<br>0.8 cunt<br>0.4<br>0 ae<br>-100 -50 0 50 100 150 200<br>T j  ,Junction Temperature (  [o] C)<br> , Drain Current (A)<br>ID<br>DS(ON)<br>Normalized R<br>GS(th)<br>Normalized V<br>**----- End of picture text -----**<br>


## **Fig 2. Typical Output Characteristics** 

**Fig 4. Normalized On-Resistance** 

**Fig 6. Gate Threshold Voltage v.s. Junction Temperature** 

**3** 

**XP15NA4R4TL** 

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NSEMI<br>f=1.0MHz<br>12 15000<br>I D = 5 0A<br>10 V DS = 75 V<br>12000<br>8<br>9000<br>6 C  iss<br>6000<br>4 a ETE<br>A 3000 ce<br>2<br>(/| | [| [| Ne<br>C oss<br>0 Y | | | | 0 KES OPETEEE IE C rss<br>0 40 80 120 160 200 1 21 41 61 81 101 121 141 161 181<br>Q G  , Total Gate Charge (nC) V DS   ,Drain-to-Source Voltage (V)<br>                Fig 7. Gate Charge Characteristics       Fig 8. Typical Capacitance Characteristics<br>1000 1<br>Duty factor=0.5<br>Operation in this area<br>limited by RDS(ON)<br>100 :Rene : sereatiiiete 0.2 cama<br>100us<br>0.1 0.1<br>ee es a ee ao oN Jolt | ff +<br>1ms 0.05 PDM t<br>10<br>T<br>10ms<br>0.02 Duty factor = t/T<br>T C =25 [o] C Peak Tj = PDM x Rthjc + Tc<br>Single Pulse DC Single Pulse0.01<br>1 0.1 a 1 10 100 1000 0.010.00001 0.0001 FARA 0.001 0.01 un 0.1 1<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>             Fig 9. Maximum Safe Operating Area [[6]]   Fig 10. Effective Transient Thermal Impedance<br>200 210<br>V DS =5V DS =5V =5V<br>180<br>160<br>150<br>120<br>120<br>mg<br>90<br>80<br>60<br>40 ~ pf T j j =1755 [[o]] C<br>30 T j =25 j =25 =25 [[o]] C<br>0 0 /. T j = -55 j = -55 = -55 [[o]] C<br>25 75 125 175 0 2 4 6 8 10<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br> , Drain Current (A)IDIDD  , Drain Current (A)IDIDD<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

**Fig 9. Maximum Safe Operating Area[[6]]** 

**Fig 10. Effective Transient Thermal Impedance** 

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200 210<br>V DS =5V DS =5V =5V<br>180<br>160<br>150<br>120<br>120<br>mg<br>90<br>80<br>60<br>40 ~ pf T j j =1755 [[o]] C<br>30 T j =25 j =25 =25 [[o]] C<br>0 0 /. T j = -55 j = -55 = -55 [[o]] C<br>25 75 125 175 0 2 4 6 8 10<br>T C  , Case Temperature (  [o] C ) V GS , Gate-to-Source Voltage (V)<br>Fig 11. Drain Current v.s. Case               Fig 12. Transfer Characteristics<br>            Temperature<br> , Drain Current (A)IDIDD  , Drain Current (A)IDIDD<br>**----- End of picture text -----**<br>


**4** 

**XP15NA4R4TL** 

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50<br>T j =25 [o] C<br>40<br>poeepebetee|<br>30<br>20 P|<br>10<br>V GS =10V<br>0<br>0 Bo] 40 80 120<br>I D  , Drain Current (A)<br>              Fig 13. Typ. Drain-Source on State<br>            Resistance<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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400300 feet<br>200<br>PRR<br>100<br>0<br>0 25 50 75 100 125 150 175<br>A [EEEED] IS<br>T C , Case Temperature( [o] C)<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Fig 14. Total Power Dissipation** 

**5** 

**XP15NA4R4TL** 

## **MARKING INFORMATION** 

Part Number **15NA4R4 YWWSSS** Date Code (YWWSSS) Y ： Last Digit Of  The Year WW ： Week SSS ： Sequence 

**6** 

## **Packa e  Outline  :  TOLL g** 

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SYMBOLS MIN NOM MAX<br>E E1<br>L1 A 2.20 2.30 2.40<br>b1<br>b 0.70 0.80 0.90<br>b1 9.70 9.80 9.90<br>c 0.40 0.50 0.60<br>H1<br>D 10.28 10.38 10.58<br>E 9.70 9.90 10.10<br>D H<br>1+ tJ f [===———— E1 7.90 8.70 9.50<br>e 1.20BCS<br>H 11.48 11.68 11.88<br>1 L H1 6.75 - 7.43<br>| ——<br>apogee Papaaaath—t p—p——— L 1.40 1.90 2.10<br>e 8x b L2 L1 0.60 0.70 0.80<br>BACKSIDE VIEW<br>=———— L2 0.50 0.60 0.70<br>α α 10° REF.<br>A<br>c .<br>**----- End of picture text -----**<br>


1.All dimension are in millimeters. 

2.Dimension does not include burrs and mold flash/protrusions. 

3.The outline schematic is not to scale and slightly different from the actual product appearance. 

Draw No.  M1-TL-8-EFIM-G-V04 

**TOLL** 

## **TOLL FOOTPRINT** ： 

## | ~~—~~ **.** 

Draw No.  M1-TL-8-EFIM-G-V04