XP10TN010CMT

## **XP10TN010CMT** ~~[oo~~ **Halogen-Free Product** 

_**N-CHANNEL ENHANCEMENT MODE POWER MOSFET**_ 

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D BVDSS 100V<br>R 10m Ω<br>DS(ON)<br>ID 49A<br>G<br>S D<br>D<br>D<br>D<br>process<br>and fast<br>an extreme<br>S<br>converters<br>with backside<br>SS G<br>PMPAK [®]  5x6<br>**----- End of picture text -----**<br>


- **100% Rg & UIS Test** 

- **Simple Drive Requirement** 

- ▼ **Lower On-resistance** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP10TN010C series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

The PMPAK[®] 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage<br>~~a~~|100|V|
|VGS<br>~~a~~|Gate-Source Voltage<br>~~a~~<br>~~a~~|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current , VGS@ 10V<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|49|A|
|ID@TC=100℃<br>~~a~~<br>~~a~~|Drain Current , VGS@ 10V<br>~~a~~<br>~~a~~<br>~~ee~~|31|A|
|ID@TA=25℃<br>~~a~~|Drain Current, VGS@ 10V3<br>~~ee~~|17|A|
|ID@TA=70℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V3<br>~~ee~~<br>~~a~~<br>~~a~~|13.6|A|
|IDM<br>~~a~~|Pulsed Drain Current1<br>~~a~~|160|A|
|PD@TC=25℃<br>~~a~~|Total Power Dissipation<br>~~a~~<br>~~a~~|41.6|W|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation3|5|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy4|54|mJ|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a ~~|OperatingJunction Temperature Range<br> ~~ee~~|-55 to 150<br>~~ee~~|℃<br>~~ee~~|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|3|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|℃/W|



**1** 

**202311231YAGEO** 

**XP10TN010CMT** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.|Typ.<br>~~ee~~|Max.<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~eG~~|VGS=0V, ID=250uA<br>~~ee~~<br>~~eG~~|100<br>~~eG~~|-<br>~~ee~~<br>~~eG~~|-<br>~~ee~~<br>~~eG~~|V<br>~~ee~~<br>~~eG~~|
|RDS(ON)<br>~~pO~~|Static Drain-Source On-Resistance2<br>~~pO~~|VGS=10V, ID=20A<br>~~pO~~|-<br>~~pO~~|-<br>~~pO~~|10<br>~~pO~~|mΩ<br>~~pO~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~eG~~|VDS=VGS, ID=250uA<br>~~eG~~|2<br>~~eG~~|-<br>~~eG~~|4<br>~~eG~~|V<br>~~eG~~|
|gfs<br>~~pO~~|Forward Transconductance<br>~~pO~~|VDS=5V, ID=20A<br>~~pO~~|-<br>~~pO~~|23<br>~~pO~~|-<br>~~pO~~|S<br>~~pO~~|
|IDSS<br>~~a~~<br>~~a~~|Drain-Source Leakage Current<br>~~eG~~<br>~~ee~~|VDS=80V, VGS=0V<br>~~eG~~<br>~~eG~~|-<br>~~eG~~<br>~~G~~|-<br>~~eG~~<br>~~G~~|25<br>~~eG~~<br>~~G~~|uA<br>~~eG~~<br>~~G~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~ee~~|VGS=+<br>20V, VDS=0V<br>~~eG~~|-<br>~~G~~|-<br>~~G~~|+<br>100<br>~~G~~|nA<br>~~G~~|
|Qg<br>~~a~~<br>~~es~~<br>~~es~~|Total Gate Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~|ID=20A<br>VDS=50V<br>VGS=10V<br>~~eG~~<br>~~|~~|-<br>~~G~~<br>~~a~~<br>~~|~~<br>~~**|**~~|41<br>~~G~~<br>~~a~~|65.6<br>~~G~~<br>~~a~~|nC<br>~~G~~<br>~~a~~|
|Qgs<br>~~es~~<br>~~es~~<br>~~es~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|13<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|Qgd<br>~~es~~<br>~~es~~<br>~~es~~|Gate-Drain("Miller")Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~a~~|16<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|td(on)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-on DelayTime<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDS=50V<br>ID=20A<br>RG=6Ω<br>VGS=10V<br>~~|~~|-<br>~~a~~<br>~~a~~<br>~~a~~|16<br>~~a~~<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~<br>~~a~~|
|tr<br>~~es~~<br>~~es~~<br>~~rs~~|Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~a~~<br>~~|~~<br>~~**|**~~|65<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|td(off)<br>~~es~~<br>~~rs~~<br>~~es~~|Turn-off DelayTime<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|26<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|tf<br>~~rs~~<br>~~es~~<br>~~es~~|Fall Time<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~a~~|51<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|Ciss<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|VGS=0V<br>VDS=50V<br>f=1.0MHz<br>~~|~~<br>~~pot~~|-<br>~~a~~<br>~~a~~<br>~~|~~<br>~~|~~|2150<br>~~a~~<br>~~a~~<br>~~|~~|3440<br>~~a~~<br>~~a~~|pF<br>~~a~~<br>~~a~~|
|Coss<br>~~es~~<br>~~es~~<br>~~rr~~|Output Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~|~~<br>~~pot~~|625<br>~~a~~<br>~~|~~<br>~~pot|~~|-<br>~~a~~<br>~~|~~|pF<br>~~a~~<br>~~|~~|
|Crss<br>~~es~~<br>~~rr~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~pot~~|23<br>~~|~~<br>~~pot|~~|-<br>~~|~~|pF<br>~~|~~|
|Rg<br>~~rr~~<br>~~a~~|Gate Resistance<br>~~ee~~|f=1.0MHz<br>~~pot~~|-<br>~~pot~~|1<br>~~pot |~~|2<br>~~|~~|Ω<br>~~|~~|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=20A, VGS=0V|-|-|1.3|V|
|trr|Reverse Recovery Time|IS=20A,VGS=0V,<br>dI/dt=100A/µs|-|49|-|ns|
|Qrr|Reverse RecoveryCharge||-|61|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

2.Pulse test 

3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec; 60[o] C/W at steady state. 

4.Starting Tj=25[o] C , VDD=50V , L=0.1mH , RG=25 Ω 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP10TN010CMT** 

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160 80<br>T C =25 [o] C 10V T C = 150 [o] C 10V<br>9.0V<br>9.0V 8.0V<br>120 60<br>8.0V 7.0V<br>80 FE] 40 ie<br>7.0V V  G  = 6.0V<br>40 20<br>V G = 6.0V<br>0 0<br>0 4 8 12 16 0 2 4 6 8<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>32 2.4<br>I D = 20 A I D =20A<br>28 T C =25 [o] C V G =10V<br>CHIE 2.0 SSS<br>24<br>pope 1.6 ECE eehs<br>20<br>1.2<br>16<br>0.8<br>12<br>8 SSS 0.4 Leet<br>5 6 7 8 9 10 -100 -50 0 50 100 150<br>V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>40 2.0<br>I D =250uA<br>1.6<br>30<br>TE) 1.2 ae<br>T j =150 [o] C T j =25 [o] C<br>20<br>0.8<br>10<br>0.4<br>0 uai 0.0 LOEe<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150<br>V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 5. Forward Characteristic of               Fig 6. Gate Threshold Voltage v.s.<br>          Reverse Diode           Junction Temperature<br> , Drain Current (A)ID  , Drain Current (A)ID<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 5. Forward Characteristic of Reverse Diode** 

**3** 

**XP10TN010CMT** 

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12 5000 f=1.0MHz<br>I D = 20 A<br>10 V DS =50V<br>4000<br>8<br>|<br>3000 |<br>|<br>|<br>6 t<br>e L-+-- | C iss<br>2000 pre ||<br>4<br>1000<br>2<br>C oss<br>KN C rss<br>0 0<br>0 10 20 30 40 50 1 21 41 61 81 101 121<br>Q G  , Total Gate Charge (nC) V DS  , Drain-to-Source Voltage (V)<br>              Fig 7. Gate Charge Characteristics              Fig 8. Typical Capacitance Characteristics<br>1000 SF a ToaPSM =F saeTon =F amin54 FE = 415 aTITlFH 1 Peer Duty factor=0.5 TTer al<br>100 WT UT O -bLituuibo area limited bperation in thisy  EZSSSS taauuib a oa cot 2 a a oi 0.2 LTieee e eat ol<br>RDS(ON)<br>; < SF ARGENR = SREAPE ES Sq FF 0.1 0.1 | “A<br>POA eo AM<br>10 AGL NNN NHN Soi 10us 0.05 aor fle ees eet eee<br>=PSS arom Qa Np a in iAAoe<br>SEU PIESHIP > 5 NEME SSG eR 100us — 444141 0.02 A<br>1 Pitti Se ST 2 |NIN| AN = 7 NAM‘\ , 23hPitti e 0.01 Z Wa A PDM |<br>Se NNee eet  Se 1ms eee 0.01 Single Pulse CN t ULI<br>T<br>ran rnin Nirin vith fee ot iit<br>0.1 Duty factor = t/T<br>oe T C =25 [o] C Ne 10ms Peak T j  = P DM  x R thjc  + T c<br>Single  Pulse DC<br>0.01 0.001<br>0.1 ene 1 10 100 1000 0.00001 LAT 0.0001 VAN 0.001 AT 0.01 0.1 il 1<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>               Fig 9. Maximum Safe Operating Area    Fig 10. Effective Transient Thermal Impedance<br>80 80<br>V DS =5V<br>60 60<br>40 40<br>T j =150 [o] C<br>20 20 T  j  =25 [o] C<br>T j = -55 [o] C<br>0 0<br>25 50 75 100 125 150 0 2 4 6 8 10<br>T C  , Case Temperature (    , Case Temperature (  [[o]] C ) V GS , Gate-to-Source Voltage (V)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br> , Drain Current (A)  , Drain Current (A)<br>IDD ID<br>**----- End of picture text -----**<br>


## **Fig 7. Gate Charge Characteristics** 

## **Fig 8. Typical Capacitance Characteristics** 

**Fig 9. Maximum Safe Operating Area** 

**Fig 10. Effective Transient Thermal Impedance** 

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80<br>60<br>40<br>20<br>0<br>25 50 75 100 125 150<br>T C  , Case Temperature (  [[o]] C )<br> , Drain Current (A)<br>IDD<br>**----- End of picture text -----**<br>


**Fig 11. Drain Current v.s. Case Temperature** 

**Fig 12. Transfer Characteristics** 

**4** 

**XP10TN010CMT** 

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2<br>I D  =1mA<br>1.6 eerereber<br>1.2<br>0.8<br>0.4 Tee<br>0<br>-100 -50 0 50 100 150<br>T  j  , Junction Temperature ( [o] C)<br>              Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction<br>            Temperature<br>50<br>T j =25 [o] C<br>40<br>30<br>20<br>V GS =10V<br>100 PERE<br>0 10 20 30 40 EEE 50 60<br>I D  , Drain Current (A)<br>DSS<br>Normalized BV<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Fig 13. Normalized BVDSS  v.s. JunctionDSS  v.s. Junction  v.s. Junction Temperature** 

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50<br>40<br>0 Eee pcisbee<br>30<br>20<br>10 ;<br>0<br>0 50 100 150<br>T C , Case Temperature( [o] C)<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Fig 14. Total Power Dissipation** 

**Fig 15. Typ. Drain-Source on State Resistance** 

**5** 

**XP10TN010CMT** 

## **MARKING INFORMATION** 

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Part Number<br>10TN010C<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

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YAGEO<br>Packa e  Outline  :  PMPAK 5x6<br>g<br>D1<br>D2<br>H<br>i<br>SYMBOLS Millimeters<br>MIN NOM MAX<br>E2 A 0.90 1.10 1.30<br>E1 E b 0.33 0.41 0.51<br>C 0.254(Ref.)<br>mail == D1 4.80 4.90 5.10<br>D2 3.61 4.00 4.40<br>K<br>E 5.80 6.03 6.25<br>L 1 E1 (Ref.) 5.60 5.75 5.90<br>a E2 (Ref.) 3.30 3.55 3.80<br>e b L1<br>e 1.27 BSC<br>BACKSIDE VIEW<br>H 0.35 － 0.90<br>K (Ref.) 1.00 1.275 －<br>α( Reference) L 0.35 0.55 0.75<br>L1 0.06 0.13 0.20<br>α( Ref.) 0° － 12°<br>A .<br>C<br>**----- End of picture text -----**<br>


1.All dimension are in millimeters. 

2.Dimension does not include burrs and mold flash/protrusions. 

- 3.The outline schematic is not to scale and slightly different from the actual product appearance. 

Draw No.  M1-MT-8-EIFMRL-G-v08 

## **PMPAK 5x6 (E-TYPE)** 

## **PMPAK 5X6(E-TYPE)  FOOTPRINT** ： 

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Draw No.  M1-MT-8-EIFMRL-G-v08