XP10NB6R9CST

## **XP10NB6R9CST** ~~[oo~~ **Halogen-Free Product** 

_**N-CHANNEL ENHANCEMENT MODE**_ 

_**POWER MOSFET**_ 

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D BVDSS 100V<br>RDS(ON) 6.9m Ω<br>G<br>S D<br>process<br>and fast<br>an extreme [S] [G]<br>S [S]<br>**----- End of picture text -----**<br>


- **100% Rg & UIS Test** 

- **Simple Drive Requirement** 

- **Low On-resistance** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP10NB6R9C series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SPPAK 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. 

**SPPAK 5x6** 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage<br>~~a~~<br>~~a~~|100|V|
|VGS<br>~~a~~|Gate-Source Voltage<br>~~a~~<br>~~a~~|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V6(Silicon Limited)<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|113|A|
|ID@TC=25℃<br>~~a~~|Drain Current, VGS@ 10V6(Package Limited)|100|A|
|ID@TC=100℃<br>~~a~~|Drain Current , VGS@ 10V|80|A|
|ID@TA=25℃<br>~~a~~|Drain Current, VGS@ 10V3|20|A|
|ID@TA=70℃<br>~~a ~~|Drain Current, VGS@ 10V3<br> ~~a~~|17|A|
|IDM<br>~~a~~|Pulsed Drain Current1|400|A|
|PD@TC=25℃<br>~~a ~~|Total Power Dissipation<br> ~~a~~|187.5|W|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation3|6|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy4|200|mJ|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 175|℃|
|TJ<br>~~a ~~|OperatingJunction Temperature Range<br> ~~ee~~|-55 to 175<br>~~ee~~|℃<br>~~ee~~|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|0.8|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|℃/W|



**1** 

**202401241YAGEO** 

**XP10NB6R9CST** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.<br>~~ee~~|Typ.<br>~~ee~~<br>~~ee~~|Max.<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~pO~~|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~pO~~|VGS=0V, ID=250uA<br>~~ee~~<br>~~pO~~|100<br>~~ee~~<br>~~pO~~|-<br>~~ee~~<br>~~ee~~<br>~~pO~~|-<br>~~ee~~<br>~~pO~~|V<br>~~ee~~<br>~~pO~~|
|RDS(ON)<br>~~a~~|Static Drain-Source On-Resistance2<br>~~eG~~|VGS=10V, ID=30A<br>~~eG~~|-<br>~~eG~~|-<br>~~eG~~|6.9<br>~~eG~~|mΩ<br>~~eG~~|
|VGS(th)<br>~~pO~~|Gate Threshold Voltage<br>~~pO~~|VDS=VGS, ID=250uA<br>~~pO~~|2<br>~~pO~~|-<br>~~pO~~|4<br>~~pO~~|V<br>~~pO~~|
|gfs<br>~~a~~|Forward Transconductance<br>~~eG~~|VDS=5V, ID=30A<br>~~eG~~|-<br>~~eG~~|75<br>~~eG~~|-<br>~~eG~~|S<br>~~eG~~|
|IDSS<br>~~pO~~|Drain-Source Leakage Current<br>~~pO~~|VDS=80V, VGS=0V<br>~~pO~~|-<br>~~pO~~|-<br>~~pO~~|25<br>~~pO~~|uA<br>~~pO~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~GO~~|-<br>~~GO~~|-|+<br>0.1|uA|
|Qg<br>~~a~~<br>~~es~~<br>~~es~~|Total Gate Charge5<br>~~a~~<br>~~ee~~<br>~~ee~~|ID=30A<br>VDS=50V<br>VGS=10V<br>~~GO~~|-<br>~~GO~~<br>~~a~~<br>~~a~~|56<br>~~a~~<br>~~a~~|89<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|Qgs<br>~~es~~<br>~~es~~<br>~~rs~~|Gate-Source Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~a~~<br>~~ee~~|15<br>~~a~~<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~a~~<br>~~ee~~|nC<br>~~a~~<br>~~a~~<br>~~ee~~|
|Qgd<br>~~es~~<br>~~rs~~<br>~~es~~|Gate-Drain("Miller")Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~<br>~~a~~|18<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~<br>~~ee~~<br>~~a~~|nC<br>~~a~~<br>~~ee~~<br>~~a~~|
|td(on)<br>~~rs~~<br>~~es~~<br>~~es~~|Turn-on DelayTime5<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDS=50V<br>ID=30A<br>RG=5.1Ω<br>VGS=10V<br>~~|~~|-<br>~~ee~~<br>~~a~~<br>~~|~~<br>~~**|**~~|15<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|ns<br>~~ee~~<br>~~a~~|
|tr<br>~~es~~<br>~~es~~<br>~~es~~|Rise Time5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|65<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|td(off)<br>~~es~~<br>~~es~~<br>~~rs~~|Turn-off DelayTime5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~ee~~|41<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|ns<br>~~a~~<br>~~ee~~|
|tf<br>~~es~~<br>~~rs~~<br>~~es~~|Fall Time5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~ee~~<br>~~a~~|98<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~<br>~~ee~~<br>~~a~~|ns<br>~~a~~<br>~~ee~~<br>~~a~~|
|Ciss<br>~~rs~~<br>~~es~~<br>~~es~~|Input Capacitance5<br>~~ee~~<br>~~ee~~<br>~~ee~~|VGS=0V<br>VDS=80V<br>f=1.0MHz<br>~~|~~<br>~~|~~<br>~~eG~~|-<br>~~ee~~<br>~~a~~<br>~~|~~<br>~~|~~|2980<br>~~ee~~<br>~~a~~<br>~~|~~|4768<br>~~ee~~<br>~~a~~|pF<br>~~ee~~<br>~~a~~|
|Coss<br>~~es~~<br>~~es~~<br>~~re~~|Output Capacitance5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~|~~<br>~~|ot~~|440<br>~~a~~<br>~~|~~<br>~~ot~~<br>~~|~~|-<br>~~a~~|pF<br>~~a~~|
|Crss<br>~~es~~<br>~~re~~<br>~~a~~|Reverse Transfer Capacitance5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|ot~~<br>~~eG~~|10<br>~~|~~<br>~~ot~~<br>~~|~~<br>~~eG~~|-<br>~~eG~~|pF<br>~~eG~~|
|Rg<br>~~re~~<br>~~a~~|Gate Resistance<br>~~ee~~<br>~~ee~~|f=1.0MHz<br>~~|~~<br>~~eG~~|-<br>~~| ot~~<br>~~eG~~|1.5<br>~~ot~~<br>~~|~~<br>~~eG~~|3<br>~~eG~~|Ω<br>~~eG~~|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

## 2.Pulse test 

3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec ; 60[o] C/W at steady state. 

4.Starting Tj=25[o] C , VDD=50V , L=1mH , RG=25Ω , VGS=10V 

5.Guaranteed by design. 

6.Package limitation current is 100A . 

7.These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175[o] C. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP10NB6R9CST** 

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400 120<br>T C =25 [o] C 9.0V10V T  C  =1 75 [o] C 10V<br>9.0V<br>320 8.0V 8.0V<br>7.0V 90<br>7.0V<br>0.95m V Ω GS  =6.0V<br>240<br>V GS =6.0V<br>60<br>160<br>30<br>80<br>0 PETER 0 ese<br>0 2 4 6 8 10 12 14 16 0 2 ee 4 = 6<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>15 2.4<br>I D  = 3 0A I D = 3 0A<br>13 T C  =25 [o] C 2 V GS =10V<br>11 1eEneE<br>1.6<br>9<br>1.2<br>7<br>PE 0.8 co<br>5<br>3 4 SRE 6 Ep 8 10 0.4-100 EER -50 0 50 100 HT 150 200<br>V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>100 2.0<br>I D =250uA<br>1.6<br>1.2<br>10 T j =1 75 [o] C T j =25 [o] C<br>0.8<br>0.4<br>1 0.0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150 200<br>V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br> , Drain Current (A)  , Drain Current (A)<br>ID ID<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 5. Forward Characteristic of** 

**Fig 6. Gate Threshold Voltage v.s. Junction Temperature** 

**Reverse Diode** 

**3** 

**XP10NB6R9CST** 

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12 5000 f=1.0MHz<br>I D = 3 0A<br>10 V DS = 50 V<br>4000<br>8 0.95m Ω<br>3000 C iss<br>6 ~4---b-+-<br>i<br>2000 I<br>1<br>4 i<br>|<br>i<br>i<br>2 1000 MAE C oss 11<br>i a ie C rss<br>0 0 | !<br>0 20 40 60 80 1 21 41 61 81 101<br>Q G  , Total Gate Charge (nC) V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Fig 7. Gate Charge Characteristics** 

## **Fig 8. Typical Capacitance Characteristics** 

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1000 = Eaton ip aagcakiaaapmdsasodal 1 ee ee |<br>estat tase asters) Po ee<br>Duty factor=0.5<br>Operation in this<br>area limited by<br>RDS(ON) a Port til y<br>100 PortailLitt potNeinDNoTITS  TNT Niror atN -aciititPoritivdtt 0.2<br>10us<br>SPFSra Peha a 7 > NNpa  ERNN NN SINS Pye asia 0.1 0.1 <fo<br>rayrin tip saci 0.05 WI,<br>py ra NN oN PITT HY<br>100us<br>10 Tart TTTINR NNO Ni SS A 0.02 PDM<br>Jor SUT TT Y TL t<br>[ratesPaded tasLoPoaethLiurit = aXNNENAtpsNef tt 1ms  actboltPitutt Single Pulse0.01 Kk1o! T 1<br>Single  Pulse T C =25 [o] C aocsass ror ril a rial aN —~ 10msDC  tlt rot itil Duty factor = t/T Peak Tj = PDM x Rthjc + TC<br>Porarun Portail aPorcatitNati -  site Por tiil<br>1 Li eee eee een 0.01<br>0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>             Fig 9. Maximum Safe Operating Area [[7]]    Fig 10. Effective Transient Thermal Impedance<br>160 120<br>V DS =5V<br>| | ||<br>100<br>120 —~-l-~-+}—~~4d—~-~Jj-_~ —~-t-—-—<br>Limited by package 80 I I<br>80 60 || H} ||<br>t<br>|<br>40 +<br>|<br>40 --4--<br>20 T j =1 75 [o] C | |<br>T j =25 [o] C ||<br>0 0 Eee T j =-55 gree [o] C |I<br>25 50 75 100 125 150 175 0 2 4 6 8 10<br>T C  , Case Temperature (  C  , Case Temperature (   , Case Temperature (  [[o]] C ) V GS , Gate-to-Source Voltage (V)<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br> , Drain Current (A)  , Drain Current (A)<br>IDD ID<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area[[7]]** 

**Fig 10. Effective Transient Thermal Impedance** 

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160<br>120<br>Limited by package<br>80<br>40<br>0<br>25 50 75 100 125 150 175<br>T C  , Case Temperature (  C  , Case Temperature (   , Case Temperature (  [[o]] C )<br> , Drain Current (A)<br>IDD<br>**----- End of picture text -----**<br>


**Fig 11. Drain Current v.s. Case Temperature** 

**Fig 12. Transfer Characteristics** 

**4** 

**XP10NB6R9CST** 

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2 200<br>I D =1mA<br>1.6 160<br>0.95m Ω<br>1.2 120<br>0.8 80<br>0.4 40<br>0 ace 0<br>-100 -50 0 50 100 150 200 0 50 100 150<br>T  j  , Junction Temperature ( [o] C) T C , Case Temperature( C , Case Temperature( , Case Temperature( [[o]] C)<br>              Fig 13. Normalized BVDSS  v.s. Junction               Fig 14. Total Power Dissipation<br>            Temperature<br>50<br>T j  =25 [o] C<br>40<br>30<br>20<br>10<br>V GS =10V<br>0 PeReeeeenes<br>0 20 40 60 80 100 120<br>I D  , Drain Current (A)<br>DSS<br>Normalized BV<br>, Power Dissipation(W)<br>D<br>P<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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50 100 150 200<br>T C , Case Temperature( C , Case Temperature( , Case Temperature( [[o]] C)<br>**----- End of picture text -----**<br>


**Fig 15. Typ. Drain-Source on State Resistance** 

**5** 

**XP10NB6R9CST** 

## **MARKING INFORMATION** 

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Part Number<br>10NB6R9C<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

## **Package Outline : SPPAK 5X6** 

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Millimeters<br>E SYMBOLS<br>MIN NOM MAX<br>— b2 — Ee<br>A 1.00 - 1.30<br>ee<br>A1 0 0.075 0.15<br>L1<br>A2 0.98 1.05 1.12<br>—<br>Af b 0.35 ee 0.42 ee 0.50 ee<br>b2 4.02 4.23 4.41<br>i ane 1 c 0.19 0.22 0.25 —<br>D1<br>c1 0.24 0.27 0.30<br>D D 4.45 - 4.70<br>H<br>Eject Pin Mark D1 - - 4.45<br>| On | ee<br>ro es ee ee<br>E 4.95 - 5.30<br>E1 E1 3.50 - 3.70<br>e 1.27 BSC<br>L2 H 5.95 - 6.25<br>YOSet]Go |  REE L 0.40 - 0.85<br>_ e | — L1 0.27 - 0.57<br>b<br>L2 0.80 - 1.30<br>ee<br>.<br>1.All Dimensions Are in Millimeters.<br>2.Dimension Does Not Include Mold Protrusions.<br>A2 A<br>Toon P+<br>c1<br>A1 c<br>Set  —$<br>L<br>**----- End of picture text -----**<br>


. 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 

Draw No.  M1-CST4I-G-v02 

## **SPPAK 5X6** 

## **SPPAK 5X6 FOOTPRINT** ： 

# **.** } 

Draw No.  M1-CST4I-G-v02