XP10NA8R4MT

**XP10NA8R4MT** 

## ~~[oo~~ **Halogen-Free Product** 

## _**N-CHANNEL ENHANCEMENT MODE POWER MOSFET**_ 

- **100% Rg & UIS Test** 

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- **Simple Drive Requirement** 

- **Low On-resistance** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP10NA8R4 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

The PMPAK[®] 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. 

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BVDSS 100V<br>RDS(ON) 8.4m Ω<br>D<br>D<br>D<br>D<br>S<br>SS G<br>PMPAK [®]  5x6<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage<br>~~a~~|100|V|
|VGS<br>~~a~~|Gate-Source Voltage<br>~~a~~<br>~~a~~|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current , VGS@ 10V<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|66.5|A|
|ID@TC=100℃<br>~~a~~<br>~~a~~|Drain Current , VGS@ 10V<br>~~a~~<br>~~a~~<br>~~ee~~|42|A|
|ID@TA=25℃<br>~~a~~|Drain Current, VGS@ 10V3<br>~~ee~~|17.8|A|
|ID@TA=70℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V3<br>~~ee~~<br>~~a~~<br>~~a~~|14.2|A|
|IDM<br>~~a~~|Pulsed Drain Current1<br>~~a~~|240|A|
|PD@TC=25℃<br>~~a~~|Total Power Dissipation<br>~~a~~<br>~~a~~|69|W|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation3|5|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy4|125|mJ|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a ~~|OperatingJunction Temperature Range<br> ~~ee~~|-55 to 150<br>~~ee~~|℃<br>~~ee~~|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|1.8|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|℃/W|



**1** 

**202311231YAGEO** 

**XP10NA8R4MT** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.|Typ.<br>~~ee~~|Max.<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~eG~~|VGS=0V, ID=250uA<br>~~ee~~<br>~~eG~~|100<br>~~eG~~|-<br>~~ee~~<br>~~eG~~|-<br>~~ee~~<br>~~eG~~|V<br>~~ee~~<br>~~eG~~|
|RDS(ON)<br>~~pO~~|Static Drain-Source On-Resistance2<br>~~pO~~|VGS=10V, ID=12A<br>~~pO~~|-<br>~~pO~~|-<br>~~pO~~|8.4<br>~~pO~~|mΩ<br>~~pO~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~eG~~|VDS=VGS, ID=250uA<br>~~eG~~|2<br>~~eG~~|-<br>~~eG~~|4<br>~~eG~~|V<br>~~eG~~|
|gfs<br>~~pO~~|Forward Transconductance<br>~~pO~~|VDS=5V, ID=20A<br>~~pO~~|-<br>~~pO~~|51<br>~~pO~~|-<br>~~pO~~|S<br>~~pO~~|
|IDSS<br>~~a~~<br>~~a~~|Drain-Source Leakage Current<br>~~eG~~<br>~~ee~~|VDS=80V, VGS=0V<br>~~eG~~<br>~~eG~~|-<br>~~eG~~<br>~~G~~|-<br>~~eG~~<br>~~G~~|25<br>~~eG~~<br>~~G~~|uA<br>~~eG~~<br>~~G~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~ee~~|VGS=+<br>20V, VDS=0V<br>~~eG~~|-<br>~~G~~|-<br>~~G~~|+<br>0.1<br>~~G~~|uA<br>~~G~~|
|Qg<br>~~a~~<br>~~es~~<br>~~es~~|Total Gate Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~|ID=20A<br>VDS=50V<br>VGS=10V<br>~~eG~~<br>~~|~~|-<br>~~G~~<br>~~a~~<br>~~|~~<br>~~**|**~~|43<br>~~G~~<br>~~a~~|68.8<br>~~G~~<br>~~a~~|nC<br>~~G~~<br>~~a~~|
|Qgs<br>~~es~~<br>~~es~~<br>~~es~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|11<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|Qgd<br>~~es~~<br>~~es~~<br>~~es~~|Gate-Drain("Miller")Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~a~~|17<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|td(on)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-on DelayTime<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDS=50V<br>ID=20A<br>RG=7.5Ω<br>VGS=10V<br>~~|~~|-<br>~~a~~<br>~~a~~<br>~~a~~|14<br>~~a~~<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~<br>~~a~~|
|tr<br>~~es~~<br>~~es~~<br>~~rs~~|Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~a~~<br>~~|~~<br>~~**|**~~|51<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|td(off)<br>~~es~~<br>~~rs~~<br>~~es~~|Turn-off DelayTime<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|32<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|tf<br>~~rs~~<br>~~es~~<br>~~es~~|Fall Time<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~a~~|54<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|Ciss<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|VGS=0V<br>VDS=80V<br>f=1.0MHz<br>~~|~~<br>~~pot~~|-<br>~~a~~<br>~~a~~<br>~~|~~<br>~~|~~|2040<br>~~a~~<br>~~a~~<br>~~|~~|3264<br>~~a~~<br>~~a~~|pF<br>~~a~~<br>~~a~~|
|Coss<br>~~es~~<br>~~es~~<br>~~rr~~|Output Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~|~~<br>~~pot~~|300<br>~~a~~<br>~~|~~<br>~~pot|~~|-<br>~~a~~<br>~~|~~|pF<br>~~a~~<br>~~|~~|
|Crss<br>~~es~~<br>~~rr~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~pot~~|20<br>~~|~~<br>~~pot|~~|-<br>~~|~~|pF<br>~~|~~|
|Rg<br>~~rr~~<br>~~a~~|Gate Resistance<br>~~ee~~|f=1.0MHz<br>~~pot~~|-<br>~~pot~~|0.7<br>~~pot |~~|1.4<br>~~|~~|Ω<br>~~|~~|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=20A, VGS=0V|-|-|1.3|V|
|trr|Reverse Recovery Time|IS=20A,VGS=0V,<br>dI/dt=100A/µs|-|55|-|ns|
|Qrr|Reverse RecoveryCharge||-|86|-|nC|



## **Notes:** 

## 1.Pulse width limited by Max. junction temperature. 

2.Pulse test 

3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec; 60[o] C/W at steady state. 

4.Starting Tj=25[o] C , VDD=50V , L=0.1mH , RG=25 Ω , VGS=10V 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP10NA8R4MT** 

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250 150<br>T C =25 [o] C 10V T  C  = 150 [o] C 10V<br>9.0V 9.0V<br>200 8.0V 120 8.0V<br>7.0V<br>150 90<br>7.0V<br>V GS = 6.0V<br>100 Fe 60 A<br>V GS = 6.0V<br>50 30<br>0 eats] 0 EEE<br>0 2 4 6 8 10 12 14 16 0 2 4 6 8 10<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>15 2.4<br>I D = 12 A I D =12A<br>T C =25 [o] C V GS =10V<br>1311 1.62 EEEPeep<br>ep ety<br>9 1.2<br>7 0.8<br>5 0.4 aee<br>4 5 6 7 8 9 10 -100 -50 0 50 100 150<br>V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>80 2<br>I D =250uA<br>1.6<br>60<br>i 1.2 ae<br>40<br>0.8<br>T  j  =150 [o] C T  j  =25 [o] C<br>20<br>0.4<br>0 uive) 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -100 -50 0 50 100 150<br>V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 5. Forward Characteristic of               Fig 6. Gate Threshold Voltage v.s.<br>          Reverse Diode           Junction Temperature<br>3<br> , Drain Current (A)ID  , Drain Current (A)ID<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 5. Forward Characteristic of Reverse Diode** 

**XP10NA8R4MT** 

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12<br>I D = 20 A<br>10 V DS =50V<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50<br>Q G  , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

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3200 f=1.0MHz<br>2400<br>C iss<br>1600<br>800<br>C oss<br>0 C rss<br>1 21 41 61 81 101 121<br>V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>


**Fig 8. Typical Capacitance Characteristics** 

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1000 =P atone =2stene=ss3nne= 252m 1 Bneel<br>Duty factor=0.5<br>Operation in this<br>100 area limited by<br>RDS(ON)<br>0.2<br>10us<br>0.1<br>10 0.1<br>ZZi aRos 100us 1 ! : a 2<br>0.05 P DM<br>t<br>T<br>1 1ms 0.02<br>Duty factor = t/T<br>0.01 Peak Tj = PDM x Rthjc + Tc<br>T C =25 reaper [o] C atnag= Qeepe Teer A |<br>Single  Pulse DC Single Pulse<br>0.1 0.1 ON 1 10 100 1000 0.010.00001 0.0001 LUE 0.001 0.01 0.1 | 1<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>               Fig 9. Maximum Safe Operating Area    Fig 10. Effective Transient Thermal Impedance<br>80 150<br>V DS =5V<br>T j  =25 [o] C<br>120<br>60<br>T j = -55 [o] C T j =150 [o] C<br>90<br>40 pean inne<br>60<br>20<br>pooON) 30 pf<br>0 PN 0 Ls<br>25 50 75 100 125 150 0 2 4 6 8 10<br>T C  , Case Temperature (  [o] C ) V GS , Gate-to-Source Voltage (V)<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br> , Drain Current (A)  , Drain Current (A)<br>ID ID<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area** 

**Fig 10. Effective Transient Thermal Impedance** 

**Fig 11. Drain Current v.s. Case Temperature** 

**Fig 12. Transfer Characteristics** 

**4** 

**XP10NA8R4MT** 

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60 80<br>T j =25 [o] C<br>50<br>60<br>40<br>EEE |  ES<br>30 40<br>20<br>V GS =10V 20<br>Beene BN<br>10<br>0 0<br>0 20 40 60 80 100 120 0 50 100 150<br>eee | ESE<br>I D  , Drain Current (A) T C , Case Temperature( [o] C)<br>              Fig 13. Typ. Drain-Source on State               Fig 14. Total Power Dissipation<br>            Resistance<br>Ω )<br>(m<br>DS(ON)<br>R<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**5** 

**XP10NA8R4MT** 

## **MARKING INFORMATION** 

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Part Number<br>10NA8R4<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

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YAGEO<br>Packa e  Outline  :  PMPAK 5x6<br>g<br>D1<br>D2<br>H<br>i<br>SYMBOLS Millimeters<br>MIN NOM MAX<br>E2 A 0.90 1.10 1.30<br>E1 E b 0.33 0.41 0.51<br>C 0.254(Ref.)<br>mail == D1 4.80 4.90 5.10<br>D2 3.61 4.00 4.40<br>K<br>E 5.80 6.03 6.25<br>L 1 E1 (Ref.) 5.60 5.75 5.90<br>a E2 (Ref.) 3.30 3.55 3.80<br>e b L1<br>e 1.27 BSC<br>BACKSIDE VIEW<br>H 0.35 － 0.90<br>K (Ref.) 1.00 1.275 －<br>α( Reference) L 0.35 0.55 0.75<br>L1 0.06 0.13 0.20<br>α( Ref.) 0° － 12°<br>A .<br>C<br>**----- End of picture text -----**<br>


1.All dimension are in millimeters. 

2.Dimension does not include burrs and mold flash/protrusions. 

- 3.The outline schematic is not to scale and slightly different from the actual product appearance. 

Draw No.  M1-MT-8-EIFMRL-G-v08 

## **PMPAK 5x6 (E-TYPE)** 

## **PMPAK 5X6(E-TYPE)  FOOTPRINT** ： 

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Draw No.  M1-MT-8-EIFMRL-G-v08