XP10NA8R4H

## **XP10NA8R4H** ~~Po~~ **Halogen-Free Product** _**N-CHANNEL ENHANCEMENT MODE**_ 

_**POWER MOSFET**_ 

▼ **100% Rg & UIS Test D** BVDSS 100V ▼ **Simple Drive Requirement** RDS(ON) 8.4m Ω ▼ **Low On-resistance** ID 66A **G** ▼ **RoHS Compliant & Halogen-Free S Description** ) ~~>~~ AX **P** 460410NA8R4seriesseriesare arefrominnovatedAdvanceddesignPowerandinnovatedsilicon processdesign **G D S TO-252(H)** andtechnologysilicon processto achievetechnologythe lowestto achievepossibletheon-resistancelowest possibleand on-resisfast swi ching **t** ance andperformance.fast switchingIt providesperformance.the designerIt provideswith thean designerextreme efficientwith an deviceextremeforefficius **e** ntindevicea wideforrangeuse inof apowerwide range of power applications.applications. 

The TO-220 package is widely preferred for all commercial- 

industrialTO-252 packagethrough isholewidelyapplications.preferred forTheall lowcommercial-thermal resistanceindustrial surfaceand lowmountpackageapplicationscost contributeusingtoinfraredthe worldwidereflow popular package.technique and suited for high current application due to the low connection resistance. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~es~~|Parameter|Rating|Units|
|---|---|---|---|
|VDS<br>~~es~~<br>~~es~~|Drain-Source Voltage|100|V|
|VGS<br>~~es~~<br>~~es~~|Gate-Source Voltage|+<br>20|V|
|ID@TC=25℃<br>~~es~~<br>~~es~~<br>~~es~~|Drain Current, VGS@ 10V|66|A|
|ID@TC=100℃<br>~~es~~<br>~~es~~<br>~~es~~|Drain Current, VGS@ 10V|42|A|
|IDM<br>~~es~~<br>~~es~~<br>~~es~~|Pulsed Drain Current1|240|A|
|PD@TC=25℃<br>~~es~~<br>~~es~~<br>~~es~~|Total Power Dissipation|69|W|
|PD@TA=25℃<br>~~es~~<br>~~es~~<br>~~es~~|Total Power Dissipation3|2|W|
|TSTG<br>~~es~~<br>~~es~~<br>~~es~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~es~~<br>~~es~~|OperatingJunction Temperature Range|-55 to 150|℃|



## **Thermal Data** 

|Symbol|Parameter|Value|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|1.8|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|62.5|℃/W|



**1** 

**202311231YAGEO** 

**XP10NA8R4H** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Test Conditions<br>~~a~~|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~<br>~~GO~~|VGS=0V, ID=250uA<br>~~GO~~|100<br>~~GO~~|-<br>~~GO~~|-<br>~~GO~~|V<br>~~GO~~|
|RDS(ON)<br>~~a~~<br>~~a~~|Static Drain-Source On-Resistance2<br>~~eeee~~|VGS=10V, ID=30A<br>~~eeee~~|-|-|8.4|mΩ|
|VGS(th)<br>~~a~~<br>~~a~~|Gate Threshold Voltage<br>~~eeee~~|VDS=VGS, ID=250uA<br>~~eeee~~|2|-|4|V|
|gfs<br>~~a~~|Forward Transconductance<br>~~eeee~~|VDS=5V, ID=30A<br>~~eeee~~|-|50|-|S|
|IDSS<br>~~a GO~~|Drain-Source Leakage Current<br>~~GO~~|VDS=80V, VGS=0V<br>~~GO~~|-<br>~~GO~~|-<br>~~GO~~|25<br>~~GO~~|uA<br>~~GO~~|
|IGSS<br>~~a~~<br>~~a~~|Gate-Source Leakage<br>~~a~~|VGS=+<br>20V, VDS=0V<br>~~GC~~|-<br>~~GC~~<br>~~es~~|-<br>~~GC~~|+<br>0.1<br>~~GC~~|uA<br>~~GC~~|
|Qg<br>~~a ~~<br>~~a~~<br>~~a~~|Total Gate Charge<br> ~~a~~|ID=30A<br>VDS=50V<br>VGS=10V<br>~~GC~~|-<br>~~GC~~<br>~~es~~<br>~~es~~|42<br>~~GC~~|67.2<br>~~GC~~|nC<br>~~GC~~|
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~es~~<br>~~es~~|12|-|nC|
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~es~~<br>~~se~~<br>~~es~~|16<br>~~se~~|-<br>~~se~~|nC<br>~~se~~|
|td(on)<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDS=50V<br>ID=30A<br>RG=7.5Ω<br>VGS=10V|-<br>~~es~~<br>~~es~~|14|-|ns|
|tr<br>~~a~~<br>~~a~~<br>~~a~~|Rise Time||-<br>~~es~~<br>~~es~~<br>~~es~~|70|-|ns|
|td(off)<br>~~a~~<br>~~a~~|Turn-off DelayTime||-<br>~~es~~<br>~~es~~|30|-|ns|
|tf<br>~~a~~<br>~~a~~|Fall Time||-<br>~~es~~<br>~~se~~|70<br>~~se~~|-<br>~~se~~|ns<br>~~se~~|
|Ciss<br>~~ai~~<br><br>~~a~~|Input Capacitance<br>~~ai~~<br>|VGS=0V<br>VDS=80V<br>f=1.0MHz<br>~~ai~~<br>~~a~~|-<br>~~ai~~<br>~~**e**s~~|2030<br>~~ai~~|3248<br>~~ai~~|pF<br>~~ai~~|
|Coss<br>~~a~~<br>~~a~~|Output Capacitance<br>~~a~~||-<br>~~a~~~~**e**s~~|300|-|pF|
|Crss<br><br>~~a~~|Reverse Transfer Capacitance<br>||-<br>~~**e**s~~|20<br>~~e~~|-<br>~~e~~|pF<br>~~e~~|
|Rg<br>~~a~~|Gate Resistance<br>~~CC~~|f=1.0MHz<br>~~CC~~|-<br>~~CC~~|0.7<br>~~CC~~|1.4<br>~~CC~~|Ω<br>~~CC~~|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=30A, VGS=0V|-|-|1.3|V|
|trr|Reverse RecoveryTime|IS=30A, VGS=0V<br>dI/dt=100A/µs|-|55|-|ns|
|Qrr|Reverse RecoveryCharge||-|80|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

2.Pulse test 

3.Surface mounted on 1 in[2] copper pad of FR4 board 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP10NA8R4H** 

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250 150<br>T C =25 [o] C 10V T C =150 [o] C 10V<br>9.0V 9.0V<br>200 120 8.0V<br>8.0V 7.0V<br>150 90<br>7.0V<br>V GS =6.0V<br>100 60<br>[Zeaneee V GS  =6.0V<br>500 300 ae<br>0 4 8 12 16 0 4 8 12<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics            Fig 2. Typical Output Characteristics<br>16 2.4<br>I D =30A I D =30A<br>14 T C =25 [o] C 2.0 V GS =10V<br>12 1.6<br>10 Pte] 1.2 FE<br>8 0.8<br>ENS eecies<br>6 0.4<br>4 6 8 10 -100 -50 0 50 100 150<br>V GS  Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>             Fig 3. On-Resistance  v.s. Gate Voltage             Fig 4. Normalized On-Resistance<br>         v.s. Junction Temperature<br>80 2<br>I D =250uA<br>1.6<br>60<br>1.2<br>40<br>T j =150 [o] C T j =25 [o] C<br>0.8<br>20<br>0.4<br>0 ne 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -100 -50 0 50 100 150<br>V SD  , Source-to-Drain Voltage (V) T j  ,Junction Temperature (  [o] C)<br>                  Fig 5. Forward Characteristic of             Fig 6. Gate Threshold Voltage v.s.<br>              Reverse Diode         Junction Temperature<br>3<br> , Drain Current (A)  , Drain Current (A)<br>ID ID<br>Ω )<br>DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

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                  Fig 5. Forward Characteristic of<br>              Reverse Diode<br>**----- End of picture text -----**<br>


**XP10NA8R4H** 

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f=1.0MHz<br>12 4000<br>I D =30A<br>10 V DS =50V<br>3000<br>8<br>6 2000 C iss<br>4<br>1000<br>2<br>C  oss<br>C rss<br>0 A 0 ee<br>0 10 20 30 40 50 1 21 41 61 81 101 121<br>Q G  , Total Gate Charge (nC) V DS   ,Drain-to-Source Voltage (V)<br>                Fig 7. Gate Charge Characteristics       Fig 8. Typical Capacitance Characteristics<br>1000 1<br>Duty factor=0.5<br>100 Operation in this area<br>limited by R DS(ON)<br>0.2<br>10us<br>10 0.1 0.1<br>100us<br>0.05<br>PDM<br>1 1ms 0.02 t T<br>TSingle PulseC =25 [o] C DC Single Pulse0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC<br>0.1 0.01 atin<br>0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>             Fig 9. Maximum Safe Operating Area   Fig 10. Effective Transient Thermal Impedance<br>80 150<br>V DS =5V<br>120 T j =25 [o] C<br>60<br>T j = -55 [o] C<br>T j =150 [o] C<br>90<br>40<br>60<br>20<br>30<br>0 0<br>25 50 75 100 125 150 0 2 4 6 8 10<br>Easy sEaEE<br>T C  , Case Temperature (  [o] C ) V GS , Gate-to-Source Voltage (V)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br> , Drain Current (A)ID  , Drain Current (A)ID<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

**Fig 9. Maximum Safe Operating Area** 

**Fig 10. Effective Transient Thermal Impedance** 

**Fig 11. Drain Current v.s. Case Temperature** 

**Fig 12. Transfer Characteristics** 

**4** 

**XP10NA8R4H** 

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60 80<br>T j =25 [o] C<br>50<br>60<br>40<br>30 40<br>20<br>paeey 20 \<br>10 V GS =10V<br>0 poet) 0 EGE|X<br>0 20 40 60 80 100 120 0 50 100 150<br>I D  , Drain Current (A) T C , Case Temperature( [o] C)<br>              Fig 13. Typ. Drain-Source on State               Fig 14. Total Power Dissipation<br>            Resistance<br>Ω )<br>(m<br>DS(ON)<br>R<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**5** 

**XP10NA8R4H** 

## **MARKING INFORMATION** 

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Part Number<br>10NA8R4<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

## **Package Outline : TO-252** 

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Millimeters<br>SYMBOLS<br>MIN NOM MAX<br>D<br>A2 2.18 2.30 2.40<br>rr<br>A3 0.40 0.50 0.65<br>D1<br>— —|)| eeee ee<br>B 0.40 0.70 1.00<br>= E2 Sy B1 0.50 0.85 1.20<br>D 6.00 6.50 6.80<br>D1 4.80 5.35 5.90<br>mai ne E3 —— E3 4.00 (ref.)<br>E1<br>F 2.00 2.63 3.05<br>F1 0.50 0.85 1.20<br>E1 5.00 5.70 6.30<br>E2 0.50 1.10 1.80<br>F1 e 2.3 (ref)<br>C 0.35 0.525 0.70<br>B1<br>F<br>B2 A1 0.00 － 0.25<br>B<br>B2 － － 1.25<br>a e e SEE L 0.90 1.34 1.78<br>.<br>_<br>A2<br>Ved uP C<br>| A1 f okt<br>A3 L<br>|<br>1.All Dimensions Are in Millimeters.<br>**----- End of picture text -----**<br>


2.Dimension Does Not Include Mold Protrusions. 

3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. 

Draw No.  M1-H3EFIMT-G-v10 

**TO-252** 

## **TO-252 FOOTPRINT** ： 

## . rT 

Draw No. M1-H3EFIMT-G-v10