XP10NA011MT

## **XP10NA011MT** ~~[oo~~ **Halogen-Free Product** 

## _**N-CHANNEL ENHANCEMENT MODE POWER MOSFET**_ 

- **100% Rg & UIS Test** 

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- **Simple Drive Requirement** 

- ▼ **Low On-resistance** 

- **RoHS Compliant & Halogen-Free** 

## **Description** 

XP10NA011 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

The PMPAK[®] 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. 

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BVDSS 100V<br>R 11m Ω<br>DS(ON)<br>ID 49A<br>D<br>D<br>D<br>D<br>S<br>SS G<br>PMPAK [®]  5x6<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~a~~<br>~~a~~|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage<br>~~a~~|100|V|
|VGS<br>~~a~~|Gate-Source Voltage<br>~~a~~<br>~~a~~|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a~~|Drain Current , VGS@ 10V<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|49|A|
|ID@TC=100℃<br>~~a~~<br>~~a~~|Drain Current , VGS@ 10V<br>~~a~~<br>~~a~~<br>~~ee~~|31|A|
|ID@TA=25℃<br>~~a~~|Drain Current, VGS@ 10V3<br>~~ee~~|15.5|A|
|ID@TA=70℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V3<br>~~ee~~<br>~~a~~<br>~~a~~|12.4|A|
|IDM<br>~~a~~|Pulsed Drain Current1<br>~~a~~|160|A|
|PD@TC=25℃<br>~~a~~|Total Power Dissipation<br>~~a~~<br>~~a~~|50|W|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation3|5|W|
|EAS<br>~~a~~|Single Pulse Avalanche Energy4|28.8|mJ|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a ~~|OperatingJunction Temperature Range<br> ~~ee~~|-55 to 150<br>~~ee~~|℃<br>~~ee~~|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|2.5|℃/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|℃/W|



**1** 

**202311231YAGEO** 

**XP10NA011MT** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.|Typ.<br>~~ee~~|Max.<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~ee~~<br>~~eG~~|VGS=0V, ID=250uA<br>~~ee~~<br>~~eG~~|100<br>~~eG~~|-<br>~~ee~~<br>~~eG~~|-<br>~~ee~~<br>~~eG~~|V<br>~~ee~~<br>~~eG~~|
|RDS(ON)<br>~~pO~~|Static Drain-Source On-Resistance2<br>~~pO~~|VGS=10V, ID=20A<br>~~pO~~|-<br>~~pO~~|-<br>~~pO~~|11<br>~~pO~~|mΩ<br>~~pO~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~eG~~|VDS=VGS, ID=250uA<br>~~eG~~|2<br>~~eG~~|-<br>~~eG~~|4<br>~~eG~~|V<br>~~eG~~|
|gfs<br>~~pO~~|Forward Transconductance<br>~~pO~~|VDS=5V, ID=20A<br>~~pO~~|-<br>~~pO~~|38<br>~~pO~~|-<br>~~pO~~|S<br>~~pO~~|
|IDSS<br>~~a~~<br>~~a~~|Drain-Source Leakage Current<br>~~eG~~<br>~~ee~~|VDS=80V, VGS=0V<br>~~eG~~<br>~~eG~~|-<br>~~eG~~<br>~~G~~|-<br>~~eG~~<br>~~G~~|25<br>~~eG~~<br>~~G~~|uA<br>~~eG~~<br>~~G~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~ee~~|VGS=+<br>20V, VDS=0V<br>~~eG~~|-<br>~~G~~|-<br>~~G~~|+<br>0.1<br>~~G~~|uA<br>~~G~~|
|Qg<br>~~a~~<br>~~es~~<br>~~es~~|Total Gate Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~|ID=20A<br>VDS=50V<br>VGS=10V<br>~~eG~~<br>~~|~~|-<br>~~G~~<br>~~a~~<br>~~|~~<br>~~**|**~~|32<br>~~G~~<br>~~a~~|51.2<br>~~G~~<br>~~a~~|nC<br>~~G~~<br>~~a~~|
|Qgs<br>~~es~~<br>~~es~~<br>~~es~~|Gate-Source Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|7.5<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|Qgd<br>~~es~~<br>~~es~~<br>~~es~~|Gate-Drain("Miller")Charge5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~a~~|12<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|td(on)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-on DelayTime5<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDS=50V<br>ID=20A<br>RG=6Ω<br>VGS=10V<br>~~|~~|-<br>~~a~~<br>~~a~~<br>~~a~~|12<br>~~a~~<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~<br>~~a~~|
|tr<br>~~es~~<br>~~es~~<br>~~rs~~|Rise Time5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~a~~<br>~~|~~<br>~~**|**~~|52<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|td(off)<br>~~es~~<br>~~rs~~<br>~~es~~|Turn-off DelayTime5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~**|**~~<br>~~a~~|28<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|tf<br>~~rs~~<br>~~es~~<br>~~es~~|Fall Time5<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~a~~<br>~~a~~|67<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|Ciss<br>~~es~~<br>~~es~~<br>~~es~~|Input Capacitance5<br>~~ee~~<br>~~ee~~<br>~~ee~~|VGS=0V<br>VDS=80V<br>f=1.0MHz<br>~~|~~<br>~~pot~~|-<br>~~a~~<br>~~a~~<br>~~|~~<br>~~|~~|1430<br>~~a~~<br>~~a~~<br>~~|~~|2288<br>~~a~~<br>~~a~~|pF<br>~~a~~<br>~~a~~|
|Coss<br>~~es~~<br>~~es~~<br>~~rr~~|Output Capacitance5<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~|~~<br>~~|~~<br>~~pot~~|230<br>~~a~~<br>~~|~~<br>~~pot|~~|-<br>~~a~~<br>~~|~~|pF<br>~~a~~<br>~~|~~|
|Crss<br>~~es~~<br>~~rr~~<br>~~a~~|Reverse Transfer Capacitance5<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~pot~~|15<br>~~|~~<br>~~pot|~~|-<br>~~|~~|pF<br>~~|~~|
|Rg<br>~~rr~~<br>~~a~~|Gate Resistance<br>~~ee~~|f=1.0MHz<br>~~pot~~|-<br>~~pot~~|1.3<br>~~pot |~~|2.6<br>~~|~~|Ω<br>~~|~~|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=20A, VGS=0V|-|-|1.3|V|
|trr|Reverse Recovery Time5|IS=20A,VGS=0V,<br>dI/dt=100A/µs|-|52|-|ns|
|Qrr|Reverse RecoveryCharge5||-|77|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

## 2.Pulse test 

3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec; 60[o] C/W at steady state. 

4.Starting Tj=25[o] C , VDD=50V , L=0.1mH , RG=25 Ω , VGS=10V 

- 5.Guaranteed by design. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP10NA011MT** 

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160 100<br>T C =25 [o] C 10V T C = 150 [o] C 10V<br>9.0V 9.0V<br>8.0V 80 8.0V<br>120 FEeS 7.0V FLEE 7.0V<br>V  GS = 6.0V<br>60<br>V GS = 6.0V<br>80<br>40<br>40<br>20<br>0 Peppa] 0 febebees<br>0 2 4 6 8 10 12 0 2 4 6 8<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics               Fig 2. Typical Output Characteristics<br>22 2.4<br>I D = 20 A I D =20A<br>20 T C  =25 [o] C V GS =10V<br>2 EEE<br>18<br>1.6<br>16<br>PARSEEEEEERE, 0  eRegy<br>14<br>1.2<br>12<br>0.8<br>10<br>8 ema 0.4 Let<br>4 5 6 7 8 9 10 -100 -50 0 50 100 150<br>V GS  , Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 3. On-Resistance  v.s. Gate Voltage               Fig 4. Normalized On-Resistance<br>          v.s. Junction Temperature<br>40 2<br>I D =250uA<br>1.6<br>30<br>cHeeeH)<br>1.2<br>T j =150 [o] C T j =25 [o] C<br>20<br>0.8<br>10<br>0.4<br>0 AEbie] 0 EH<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150<br>V SD  , Source-to-Drain Voltage (V) T j  , Junction Temperature ( [o] C)<br>              Fig 5. Forward Characteristic of               Fig 6. Gate Threshold Voltage v.s.<br>          Reverse Diode<br> , Drain Current (A)ID  , Drain Current (A)ID<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 6. Gate Threshold Voltage v.s. Junction Temperature** 

**3** 

**XP10NA011MT** 

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12<br>I D = 20 A<br>10 V DS =50V<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40<br>Q G  , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

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3200 f=1.0MHz<br>2400<br>1600<br>C iss<br>800<br>C oss<br>C rss<br>0<br>1 21 41 61 81 101 121<br>V DS  , Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>


**Fig 8. Typical Capacitance Characteristics** 

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1000 et eer eee eee 1 SSG Sacrecant<br>Duty factor=0.5<br>100 abs Operation in this  touil isan aa a i pee<br>area limited b WTO y ZSSSsoT CA<br>RDS(ON)<br>0.2<br>10 Pru N na Ne \ i} lit<br>10us<br>0.1<br>ceataep oot SON Ny 0.1 TE<br>100us<br>1 0.05 P DM<br>1ms t<br>10ms 0.02 T<br>0.1 Fanfare 1-1 NE DC iF “p Duty factor = t/T —<br>T C =25 [o] C 0.01 Peak Tj = PDM x Rthjc + Tc<br>Single  Pulse Single Pulse<br>0.01 0.01 ATTICA wll<br>0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area** 

**Fig 10. Effective Transient Thermal Impedance** 

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60<br>50<br>40<br>30<br>20<br>10<br>0<br>25 50 75 100 125 150<br>T C  , Case Temperature (  [o] C )<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 11. Drain Current v.s. Case Temperature** 

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80<br>V DS =5V<br>60<br>40<br>T j =150 [o] C<br>20<br>T j =25 [o] C<br>T j = -55 [o] C<br>0 W,<br>0 2 4 6 8 10<br>V GS , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 12. Transfer Characteristics** 

**4** 

**XP10NA011MT** 

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50 60<br>T j =25 [o] C<br>50<br>40<br>SS] 40 BREE<br>30 copopepe] §=ENE<br>30<br>20<br>20<br>10 V GS =10V<br>10<br>0 SSD 0 ESBS<br>0 20 40 60 80 0 50 100 150<br>I D  , Drain Current (A) T C , Case Temperature( [o] C)<br>Ω )<br>(m<br>DS(ON)<br>R<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


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              Fig 13. Typ. Drain-Source on State<br>            Resistance<br>**----- End of picture text -----**<br>


**Fig 14. Total Power Dissipation** 

**5** 

**XP10NA011MT** 

## **MARKING INFORMATION** 

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Part Number<br>10NA011<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

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YAGEO<br>Packa e  Outline  :  PMPAK 5x6<br>g<br>D1<br>D2<br>H<br>i<br>SYMBOLS Millimeters<br>MIN NOM MAX<br>E2 A 0.90 1.10 1.30<br>E1 E b 0.33 0.41 0.51<br>C 0.254(Ref.)<br>mail == D1 4.80 4.90 5.10<br>D2 3.61 4.00 4.40<br>K<br>E 5.80 6.03 6.25<br>L 1 E1 (Ref.) 5.60 5.75 5.90<br>a E2 (Ref.) 3.30 3.55 3.80<br>e b L1<br>e 1.27 BSC<br>BACKSIDE VIEW<br>H 0.35 － 0.90<br>K (Ref.) 1.00 1.275 －<br>α( Reference) L 0.35 0.55 0.75<br>L1 0.06 0.13 0.20<br>α( Ref.) 0° － 12°<br>A .<br>C<br>**----- End of picture text -----**<br>


1.All dimension are in millimeters. 

2.Dimension does not include burrs and mold flash/protrusions. 

- 3.The outline schematic is not to scale and slightly different from the actual product appearance. 

Draw No.  M1-MT-8-EIFMRL-G-v08 

## **PMPAK 5x6 (E-TYPE)** 

## **PMPAK 5X6(E-TYPE)  FOOTPRINT** ： 

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Draw No.  M1-MT-8-EIFMRL-G-v08