XP10N3R8S

## **XP10N3R8S** ~~fo~~ **Halogen-Free Product** _**N-CHANNEL ENHANCEMENT MODE POWER MOSFET**_ 

- **100% Rg & UIS Test D** 

- ▼ **Simple Drive Requirement** ▼ **Fast Switching Characteristic G** 

- ▼ **RoHS Compliant & Halogen-Free S** 

## **Description** 

AX **P** 460410N3R8seriesseriesarearefrominnovatedAdvanceddesignPowerandinnovatedsilicon processdesign andtechnologysilicon processto achievetechnologythe lowestto achievepossibletheon-resistancelowest possibleand on-resisfast swi ching **t** ance andperformance.fast switchingIt providesperformance.the designerIt provideswith thean designerextreme efficientwith an extremedevice forefficius **e** ntindevicea wideforrangeuse inof apowerwide range of power applications.applications. 

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BVDSS 100V<br>RDS(ON) 3.88m Ω<br>G<br>D<br>S TO-263(S)<br>**----- End of picture text -----**<br>


The TO-220 package is widely preferred for all commercialindustrialThe TO-263throughpackageholeis widelyapplications.preferred Thefor alllowcommercial-thermal resistanceindustrial surfaceand lowmountpackageapplicationscost contributeusingtoinfraredthe worldwidereflow popular package.technique and suited for high current application due to the low connection resistance. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter|Rating|Units|
|---|---|---|---|
|VDS<br>~~a ~~|Drain-Source Voltage<br> ~~ee~~|100<br>~~ee~~|V<br>~~ee~~|
|VGS<br>~~a~~|Gate-Source Voltage|+<br>20|V|
|ID@TC=25℃<br>~~a~~<br>~~a ~~|Drain Current, VGS@ 10V3(Silicon Limited)<br> ~~ee~~|132<br>~~ee~~|A<br>~~ee~~|
|ID@TC=25℃<br>~~a~~|Drain Current, VGS@ 10V3(Package Limited)|130|A|
|ID@TC=100℃<br>~~a ~~|Drain Current, VGS@ 10V<br> ~~ee~~|83.5<br>~~ee~~|A<br>~~ee~~|
|IDM<br>~~a~~|Pulsed Drain Current1|520|A|
|PD@TC=25℃<br>~~a ~~|Total Power Dissipation<br> ~~ee~~|125<br>~~ee~~|W<br>~~ee~~|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation5|3.12|W|
|EAS<br>~~a ~~|Single Pulse Avalanche Energy4<br> ~~ee~~|211<br>~~ee~~|mJ<br>~~ee~~|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a ~~|OperatingJunction Temperature Range<br> ~~ee~~|-55 to 150<br>~~ee~~|℃<br>~~ee~~|



## **Thermal Data** 

|Symbol|Parameter|Value|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|1|℃/W|
|Rthj-a|Maximum Thermal Resistance, Junction-ambient(PCB mount)5|40|℃/W|



**1** 

**202401253YAGEO** 

**XP10N3R8S** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a ee~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.<br>~~ee~~|Typ.<br>~~ee~~|Max.<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~<br>~~a~~<br>~~ee~~|VGS=0V, ID=250uA<br>~~a~~|100|-|-|V|
|RDS(ON)<br>~~a~~<br>~~a~~|Static Drain-Source On-Resistance2<br>~~a~~<br>~~ee~~|VGS=10V, ID=60A|-|-|3.88|mΩ|
|VGS(th)<br>~~aa~~|Gate Threshold Voltage<br>~~ee~~<br>~~ee~~|VDS=VGS, ID=250uA|2|-|4|V|
|gfs<br>~~a~~|Forward Transconductance<br>~~ee~~|VDS=5V, ID=60A|-|100|-|S|
|IDSS<br>~~a~~<br>~~a~~|Drain-Source Leakage Current<br>~~ee~~<br>~~a~~<br>~~a~~|VDS=80V, VGS=0V<br>~~a~~|-|-|25|uA|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~a~~<br>~~a~~|VGS= +<br>20V, VDS=0V<br>~~CO~~|-<br>~~CO~~|-<br>~~CO~~|+<br>0.1<br>~~CO~~|uA<br>~~CO~~|
|Qg<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge6<br>~~a~~<br>~~a ~~|ID=60A<br>VDS=50V<br>VGS=10V<br> ~~CO~~|-<br>~~CO~~<br>~~ee~~<br>~~es~~|85<br>~~CO~~<br>~~ee~~|136<br>~~CO~~<br>~~ee~~|nC<br>~~CO~~<br>~~ee~~|
|Qgs<br>~~a~~<br>~~**a**~~|Gate-Source Charge6||-<br>~~es~~<br>~~es~~|21<br>|-<br>|nC<br>|
|Qgd<br>~~a~~<br>~~**a**~~|Gate-Drain("Miller")Charge6||-<br>~~es~~<br>~~es~~|35<br>|-<br>|nC<br>|
|td(on)<br>~~**a**~~<br><br>~~a~~|Turn-on DelayTime6<br>|VDS=50V<br>ID=60A<br>RG=6Ω<br>VGS=10V<br>~~a~~|-<br>~~esi~~<br>~~es~~|20<br>~~i~~|-<br>~~i~~|ns<br>~~i~~|
|tr<br>~~a~~<br>~~a~~<br>~~a~~|Rise Time6<br>~~a~~||-<br>~~aes~~<br>~~es~~|107|-|ns|
|td(off)<br><br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime6<br>||-<br>~~es~~<br>~~es~~<br>~~es~~|63|-|ns|
|tf<br>~~a~~<br>~~a~~<br>~~a~~|Fall Time6||-<br>~~es~~<br>~~es~~<br>~~**e**s~~|200|-|ns|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance6|VGS=0V<br>VDS=80V<br>f=1.0MHz|-<br>~~es~~<br>~~**e**s~~|4100|6560|pF|
|Coss<br>~~a~~|Output Capacitance6||-<br>~~**e**s~~|620<br>~~e~~|-<br>~~e~~|pF<br>~~e~~|
|Crss<br>~~a~~|Reverse Transfer Capacitance6||-<br>~~ee~~|20<br>~~ee~~|-<br>~~ee~~|pF<br>~~ee~~|
|Rg<br>~~a~~|Gate Resistance|f=1.0MHz|-|2|4|Ω|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=60A, VGS=0V|-|-|1.3|V|
|trr|Reverse Recovery Time6|IS=60A,VGS=0V,<br>dI/dt=100A/µs|-|65|-|ns|
|Qrr|Reverse RecoveryCharge6||-|100|-|nC|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

- 2.Pulse test 

- 3.Package limitation current is 130A . 

4.Starting Tj=25[o] C , VDD=50V , L=0.1mH , RG=25 Ω , VGS=10V 

- 5.Surface mounted on 1 in[2] copper pad of FR4 board 

- 6.Guaranteed by design. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP10N3R8S** 

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520 300<br>T C = 25 [o] C 10V T C =150 [o] C 10V<br>9.0V 250 9.0V<br>| 8.0V fo 8.0V<br>390 7.0V<br>7.0V 200 V GS =6.0V<br>260 V GS =6.0V 150<br>100<br>130<br>50<br>0 a 0 ee<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10<br>V DS  , Drain-to-Source Voltage (V)   , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V) DS  , Drain-to-Source Voltage (V)  , Drain-to-Source Voltage (V)<br> , Drain Current (A)  , Drain Current (A)<br>ID ID<br>**----- End of picture text -----**<br>


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0 2 4 6 8 10<br>V DS  , Drain-to-Source Voltage (V) DS  , Drain-to-Source Voltage (V)  , Drain-to-Source Voltage (V)<br>           Fig 2. Typical Output Characteristics<br>2.4<br>I D =60A<br>V GS =10V<br>2<br>1.6<br>1.2<br>0.80.4 ERSLA<br>-100 3.75 -50 0 50 100 150<br>T j  , Junction Temperature ( [o] C)<br>            Fig 4. Normalized On-Resistance<br>         v.s. Junction Temperature<br>2<br>I D =250uA<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>-100 -50 2.02E+08 0 50 100 150<br>T j  ,Junction Temperature (  [o] C)<br>DS(ON)<br>Normalized R<br>GS(th)<br>Normalized V<br>**----- End of picture text -----**<br>


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0 2 4 6 8 10 12 14 16 18 20<br>V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics<br>13<br>I D =60A<br>T C =25 [o] C<br>11<br>9<br>7<br>5<br>3 PSS<br>5 6 7 8 9 10<br>V GS  Gate-to-Source Voltage (V)<br>             Fig 3. On-Resistance  v.s. Gate Voltage<br>100<br>10<br>T j =150 [o] C T j =25 [o] C<br>1<br>0.1 i<br>0 0.2 0.4 0.6 0.8 1 1.2<br>V SD  , Source-to-Drain Voltage (V)<br>Ω )<br> (m<br>DS(ON)<br>R<br>(A)IS<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 2. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**Fig 4. Normalized On-Resistance v.s. Junction Temperature** 

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                  Fig 5. Forward Characteristic of<br>              Reverse Diode<br>**----- End of picture text -----**<br>


**Fig 6. Gate Threshold Voltage v.s. Junction Temperature** 

**3** 

**XP10N3R8S** 

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12<br>I D =60A<br>10 V DS =50V<br>8<br>6<br>4<br>2<br>0<br>0 —A 30 60 90<br>Q G  , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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f=1.0MHz<br>8000<br>7000<br>6000<br>5000<br>4000 C  iss<br>3000<br>2000<br>1000 C oss<br>C  rss<br>0<br>1 PEE 21 41 FREE 61 81 101 121<br>V DS   ,Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

## **Fig 8. Typical Capacitance Characteristics** 

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1000 1<br>Operation in this area<br>100 limited by RDS(ON) be oa Sut stood asa aay. Duty factor=0.5 seen eee<br>Ne PRU SESE " CINea<br>BOT RPANCENtISSe tH EEEELE PTeA<br>0.2<br>10 ——ACTA RACTIVENHS Se+t2 TRGES4H ——— 10us Trae i L ee 4 fae<br>0.1<br>EEENSS 0.1 STALE<br>~ UT<br>2 to ETN NIN! oe mz ey Aen Tr<br>1 100us 0.05<br>SEPTGRESERTEREA EZRA Lyy | PDM<br>ZEGToORMEITaITaaco =ZTaaInn 0.02 VY | ih EL t<br>1ms 0.01 T<br>0.1 a ATL<br>T C =25 [o] C 10ms ‘atin Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC<br>Single Pulse DC<br>0.01 0.01<br>0.1 1 10 100 1000 0.00001 3.75 0.0001 0.001 0.01 0.1 1<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area** 

## **Fig 10. Effective Transient Thermal Impedance** 

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160<br>120<br>80<br>40<br>0<br>25 50 75 100 125 150<br>T C  , Case Temperature (  [o] C )<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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150<br>V DS =5V<br>120<br>90<br>60<br>T j =150 [o] C<br>30 T j =25 [o] C<br>T j =-55 [o] C<br>0 pf<br>0 2 4 6 8 10<br>V GS , Gate-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 11. Drain Current v.s. Case Temperature** 

**Fig 12. Transfer Characteristics** 

**4** 

**XP10N3R8S** 

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40<br>T j =25 [o] C<br>30<br>20<br>10<br>V GS =10V<br>0<br>0 100 200 300<br>I D  , Drain Current (A)<br>Ω )<br>(m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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              Fig 13. Typ. Drain-Source on State<br>            Resistance<br>**----- End of picture text -----**<br>


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160<br>120<br>80<br>40<br>0<br>0 50 100 150<br>T C , Case Temperature( [o] C)<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**Fig 14. Total Power Dissipation** 

**5** 

**XP10N3R8S** 

## **MARKING INFORMATION** 

Part Number **10N3R8** 

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YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

## **Package Outline :  TO-263** 

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E<br>oe E1  , SYMBOLS Cs Millimeters<br>MIN NOM MAX<br>D2<br>_ A 4.00 4.75 5.20<br>A1 0.00 0.15 0.30<br>b 0.50 0.90 1.10<br>D1<br>b1 1.07 1.27 1.47<br>D<br>c 0.30 0.55 0.80<br>c1 1.10 1.40 1.70<br>H<br>D 8.30 9.05 9.80<br>D1 5.10(ref)<br>L2  Tun b1  —-———— D2 1.27(ref)<br>a L3 L3  1 —— E 9.50 10.10 10.70<br>b  E1 7.00 ～ 9.00(ref)<br>e 2.04 2.54 3.04<br>I | ———— L1 2.54(ref)<br>e  L2 1.5 (ref)<br>1 L3 3.50 4.50 5.50<br>θ 0° ----- 8°<br>H 13.07 15.27 16.57<br>A A  .<br>th, ==<br>c<br>c1 c1  A1 A1  θ  1.All Dimensions Are in Millimeters.<br>i oP<br>2.Dimension Does Not Include Mold Protrusions.<br>L<br>**----- End of picture text -----**<br>


Draw No.  M1-S3-G-v05 

**TO-263** 

## **TO-263 FOOTPRINT** ： 

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10.5mm<br>10.5mm<br>2 mm<br>1.2mm<br>.<br>Pin1<br>4mm<br>2.54mm  2.54mm<br>**----- End of picture text -----**<br>


Draw No. M1-S3-G-v04 

1