XP10N024H

## **XP10N024H** ~~Po~~ **Halogen-Free Product** 

## _**N-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

|▼**100% R**|**100% Rg & UIS Test**|||||**D**|
|---|---|---|---|---|---|---|
|▼**Simple Drive Requirement**|**Simple Drive Requirement**||||||
|▼**Lower On-resistance**|**Lower On-resistance**|**G**|||||
|▼**RoHS Compliant & Halogen-Free**|**RoHS Compliant & Halogen-Free**|||||**S**|



## **Description** 

AX **P** 460410N024seriesseriesarearefrominnovatedAdvanceddesignPowerandinnovatedsilicon processdesign andtechnologysilicon processto achievetechnologythe lowestto achievepossibletheon-resistancelowest possibleand on-resisfast swi ching **t** ance andperformance.fast switchingIt providesperformance.the designerIt provideswith thean designerextreme efficientwith an extremedevice forefficius **e** ntindevicea wideforrangeuse inof apowerwide range of power applications.applications. 

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BVDSS 100V<br>R 24m Ω<br>DS(ON)<br>ID 25.8A<br>G a><br>D<br>S TO-252(H)<br>**----- End of picture text -----**<br>


The TO-220 package is widely preferred for all commercialindustrialTO-252 packagethrough isholewidelyapplications.preferred forTheall lowcommercial-thermal resistanceindustrial surfaceand lowmountpackageapplicationscost contributeusingtoinfraredthe worldwidereflow popular package.technique and suited for high current application due to the low connection resistance. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~ee~~<br>~~es~~<br>~~ee~~|Parameter<br>~~es~~<br>~~es~~<br>|Rating<br>~~es~~<br>~~es~~<br>~~es~~<br>|Units<br>~~es~~<br>~~es~~<br>|
|---|---|---|---|
|VDS<br>~~ee~~<br>~~es~~<br>~~ee~~|Drain-Source Voltage<br>~~es~~<br>~~es~~<br>|100<br>~~es~~<br>~~es~~<br>~~es~~<br>|V<br>~~es~~<br>~~es~~<br>|
|VGS<br>~~es~~<br>~~ee~~|Gate-Source Voltage<br>~~es~~<br>~~es~~|+<br>20<br>~~es~~<br>~~es~~<br>~~es~~|V<br>~~es~~<br>~~es~~|
|ID@TC=25℃<br>~~ee~~<br>~~ee~~<br>~~ee~~|Drain Current, VGS@ 10V<br>~~es~~<br>~~es~~<br>~~es~~|25.8<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|A<br>~~es~~<br>~~es~~<br>~~es~~|
|ID@TC=100℃<br>~~ee~~<br>~~ee~~<br>~~ee~~|Drain Current, VGS@ 10V<br>~~es~~<br>~~es~~<br>~~es~~|16.3<br>~~es~~<br>~~es~~<br>~~es~~|A<br>~~es~~<br>~~es~~<br>~~es~~|
|IDM<br>~~ee~~<br>~~ee~~<br>~~ee~~|Pulsed Drain Current1<br>~~es~~<br>~~es~~<br>~~es~~|100<br>~~es~~<br>~~es~~<br>~~es~~|A<br>~~es~~<br>~~es~~<br>~~es~~|
|PD@TC=25℃<br>~~ee~~<br>~~ee~~<br>~~ee~~|Total Power Dissipation<br>~~es~~<br>~~es~~<br>~~es~~|31.2<br>~~es~~<br>~~es~~<br>~~es~~|W<br>~~es~~<br>~~es~~<br>~~es~~|
|PD@TA=25℃<br>~~ee~~<br>~~ee~~<br>~~ee~~|Total Power Dissipation<br>~~es~~<br>~~es~~<br>~~es~~|2<br>~~es~~<br>~~es~~<br>~~es~~|W<br>~~es~~<br>~~es~~<br>~~es~~|
|EAS<br>~~ee~~<br>~~ee~~<br>~~ee~~|Single Pulse Avalanche Energy4<br>~~es~~<br>~~es~~<br>~~es~~|16.2<br>~~es~~<br>~~es~~<br>~~es~~|mJ<br>~~es~~<br>~~es~~<br>~~es~~|
|TSTG<br>~~ee~~<br>~~ee~~<br>~~ee~~|Storage Temperature Range<br>~~es~~<br>~~es~~|-55 to 150<br>~~es~~<br>~~es~~|℃<br>~~es~~<br>~~es~~|
|TJ<br>~~ee~~<br>~~ee~~|OperatingJunction Temperature Range<br>~~es~~|-55 to 150<br>~~es~~|℃<br>~~es~~|



## **Thermal Data** 

|Symbol|Parameter|Value|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|4|℃/W|
|Rthj-a|Maximum Thermal Resistance, Junction-ambient(PCB mount)3|62.5|℃/W|



**1** 

**202311231YAGEO** 

**XP10N024H** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a ee~~|Parameter<br>~~ee~~|Test Conditions<br>~~ee~~|Min.<br>~~ee~~|Typ.<br>~~ee~~|Max.<br>~~ee~~|Units<br>~~ee~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~ee eee~~|VGS=0V, ID=250uA<br>~~eee~~|100<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|V<br>~~eee~~|
|RDS(ON)<br>~~a~~|Static Drain-Source On-Resistance2<br>~~ee eee~~|VGS=10V, ID=12A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|24<br>~~eee~~|mΩ<br>~~eee~~|
|||VGS=5V, ID=6A<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|40<br>~~eee~~|mΩ<br>~~eee~~|
|VGS(th)<br>~~a ~~|Gate Threshold Voltage<br> ~~ee eee~~|VDS=VGS, ID=250uA<br>~~eee~~|1.2<br>~~eee~~|-<br>~~eee~~|3<br>~~eee~~|V<br>~~eee~~|
|gfs|Forward Transconductance|VDS=10V, ID=12A|-|20|-|S|
|IDSS<br>~~a~~|Drain-Source Leakage Current<br>~~a~~<br>~~a~~|VDS=80V, VGS=0V<br>~~a~~|-|-|25|uA|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~a~~|VGS= 20V, VDS=0V|-|-|100|nA|
|Qg<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~|ID=6A<br>VDS=50V<br>VGS=5V|-<br>~~i~~<br>~~es~~|14.5|23.2|nC|
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~es~~<br>~~es~~|5|-|nC|
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain("Miller")Charge||-<br>~~es~~<br>~~es~~<br>~~es~~|7<br>~~ee~~|-<br>~~ee~~|nC<br>~~ee~~|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDS=50V<br>ID=12A<br>RG=3.3Ω<br>VGS=10V|-<br>~~es~~<br>~~es~~<br>~~es~~|10<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~|
|tr<br>~~a~~<br>~~a~~<br>~~a~~|Rise Time||-<br>~~es~~<br>~~es~~<br>~~es~~|21<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~|
|td(off)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime||-<br>~~es~~<br>~~es~~<br>~~es~~|22|-|ns|
|tf<br>~~a~~<br>~~a~~<br>~~a~~|Fall Time||-<br>~~es~~<br>~~es~~<br>~~es~~|6<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance|VGS=0V<br>VDS=50V<br>f=1.0MHz|-<br>~~es~~<br>~~es~~|1350<br>~~ee~~|2160<br>~~ee~~|pF<br>~~ee~~|
|Coss<br>~~a~~<br>~~a~~<br>~~a~~|Output Capacitance||-<br>~~es~~<br>~~Pf~~<br>~~es~~|185<br>~~ee~~<br>~~Pf~~|-<br>~~ee~~<br>~~Pf~~|pF<br>~~ee~~<br>~~Pf~~|
|Crss<br>~~a~~|Reverse Transfer Capacitance||-<br>~~es~~|10|-|pF|
|Rg<br>~~a~~<br>~~a~~|Gate Resistance|f=1.0MHz|-<br>~~es~~|1.6|3.2|Ω|



## **Source-Drain Diode** 

|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|VSD|Forward On Voltage2|IS=12A, VGS=0V|-|-|1.3|V|
|trr|Reverse Recovery Time|IS=12A,VGS=0V,<br>dI/dt=100A/µs|-|55|-|ns|
|Qrr|Reverse RecoveryCharge||-|80|-|nC|



## **Notes:** 

1.Pulse width limited by max. junction temperature. 

- 2.Pulse test 

- 3.Surface mounted on 1 in[2] copper pad of FR4 board 

- 4.Starting Tj=25[o] C , VDD=50V , L=0.1mH , RG=25 Ω , VGS=10V 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP10N024H** 

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100<br>T C = 25 [o] C 10V<br>7.0V<br>80 6.0V<br>60<br>5.0V<br>40<br>V G =4.0V<br>20<br>0 porte.<br>0 2 4 6 8 10<br>V DS  , Drain-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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60<br>T C =150 [o] C 10V<br>7.0V<br>50<br>6.0V<br>5.0V<br>40<br>30 V  G =4.0V<br>20<br>10<br>0<br>0 2 4 6 8<br>V DS  , Drain-to-Source Voltage (V)<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 2. Typical Output Characteristics** 

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36 2.8<br>I D =6A I D =12A<br>32 T C =25 [o] C 2.4 V G =10V<br>28 EEE] 2.0 EEE<br>24 1.6<br>20 1.2<br>16 0.8<br>12 BEER] 0.4 o<br>2 4 6 8 10 -100 -50 0 50 100 150<br>ERPEERR EEE<br>V GS  Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>             Fig 3. On-Resistance  v.s. Gate Voltage             Fig 4. Normalized On-Resistance<br>         v.s. Junction Temperature<br>25 2<br>I D =250uA<br>20 1.6<br>15 1.2<br>10 T j =150 [o] C T j =25 [o] C 0.8<br>5 0.4<br>0 ae 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150<br>V SD  , Source-to-Drain Voltage (V) T j  ,Junction Temperature (  [o] C)<br>                  Fig 5. Forward Characteristic of             Fig 6. Gate Threshold Voltage v.s.<br>              Reverse Diode         Junction Temperature<br>3<br>Ω ) DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 3. On-Resistance  v.s. Gate Voltage** 

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                  Fig 5. Forward Characteristic of<br>              Reverse Diode<br>**----- End of picture text -----**<br>


**XP10N024H** 

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f=1.0MHz<br>10 2400<br>I D =6A<br>V DS =50V 2000<br>8<br>PEPE PAPE Ar<br>1600 | |<br>| |<br>6<br>C  iss<br>1200 oer<br>4<br>800<br>Rope<br>2<br>400 C oss I|<br>C  rss<br>0 0 ONfoet ty |<br>0 4 8 12 16 20 24 1 21 41 61 81 101 121<br>Q G  , Total Gate Charge (nC) V DS   ,Drain-to-Source Voltage (V)<br>                Fig 7. Gate Charge Characteristics       Fig 8. Typical Capacitance Characteristics<br>1000 FT tamE Patou Lol ats 1 ee<br>Duty factor=0.5<br>et tarp satae oe A<br>Kaun t bau bu LH Sit ZA Oo<br>100<br>Op limited by R eration in this area DS(ON) 0.2<br>10 “AUISio itt \\ aN \ ORT\ 10us osinn 0.1 eA= 0.1 “ff<br>7 oa OEY NE een — 2 ae ee ee<br>t t t+ rt t + + + | imi I 100us rit —_l 0.05 | PDM<br>b++HH rat oN\ NH Hi 7 A YUL t<br>1 0.02 T<br>a ®. Np 1ms a 0.01 Y A lll pale<br>T C =25 [o] C 10ms Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC<br>Single Pulse DC<br>0.1 SEN 0.01 eeZ.  me<br>0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1<br>V DS  , Drain-to-Source Voltage (V) t , Pulse Width (s)<br>             Fig 9. Maximum Safe Operating Area   Fig 10. Effective Transient Thermal Impedance<br>200 50<br>T j =25 [o] C<br>|<br>|<br>160 poppe] 40 ee ee<br>a |<br>|<br>120 30<br>V GS =5V |<br>|<br>80 20 |{<br>|<br>|<br>40 V GS =10V 10<br>Poe |<br>0 0<br>Bina 0 20 40 60 80 0 50 100 150<br>I D  , Drain Current (A) T C , Case Temperature( [o] C)<br>C (pF)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>)thjc<br>(A)<br>ID<br>Normalized Thermal Response (R<br>Ω )<br>(m<br>DS(ON)<br>R<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


## **Fig 7. Gate Charge Characteristics** 

**Fig 9. Maximum Safe Operating Area** 

## **Fig 10. Effective Transient Thermal Impedance** 

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             Fig 11. Typ. Drain-Source on State<br>            Resistance<br>**----- End of picture text -----**<br>


**Fig 12. Total Power Dissipation** 

**4** 

**XP10N024H** 

## **MARKING INFORMATION** 

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Part Number<br>10N024<br>YWWSSS<br>Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**5** 

## **Package Outline : TO-252** 

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Millimeters<br>SYMBOLS<br>MIN NOM MAX<br>D<br>A2 2.18 2.30 2.40<br>rr<br>A3 0.40 0.50 0.65<br>D1<br>— —|)| eeee ee<br>B 0.40 0.70 1.00<br>= E2 Sy B1 0.50 0.85 1.20<br>D 6.00 6.50 6.80<br>D1 4.80 5.35 5.90<br>mai ne E3 —— E3 4.00 (ref.)<br>E1<br>F 2.00 2.63 3.05<br>F1 0.50 0.85 1.20<br>E1 5.00 5.70 6.30<br>E2 0.50 1.10 1.80<br>F1 e 2.3 (ref)<br>C 0.35 0.525 0.70<br>B1<br>F<br>B2 A1 0.00 － 0.25<br>B<br>B2 － － 1.25<br>a e e SEE L 0.90 1.34 1.78<br>.<br>_<br>A2<br>Ved uP C<br>| A1 f okt<br>A3 L<br>|<br>1.All Dimensions Are in Millimeters.<br>**----- End of picture text -----**<br>


2.Dimension Does Not Include Mold Protrusions. 

3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. 

Draw No.  M1-H3EFIMT-G-v10 

**TO-252** 

## **TO-252 FOOTPRINT** ： 

## . rT 

Draw No. M1-H3EFIMT-G-v10