XP10N011LM

## **XP10N011LM** ~~Po~~ **Halogen-Free Product** 

## _**N-CHANNEL ENHANCEMENT MODE**_ 

## _**POWER MOSFET**_ 

## ▼ **Simple Drive Requirement** 

**==> picture [339 x 67] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>D [D]<br>▼  Low On-resistance D<br>▼  Fast Switching Characteristic<br>G<br>▼  RoHS Compliant & Halogen-Free S<br>SO-8 S [S]<br>**----- End of picture text -----**<br>


## **Description** 

XP10N011L series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. 

**==> picture [118 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
BVDSS 100V<br>R 11m Ω<br>DS(ON)<br>ID 11A<br>D<br>G<br>S<br>**----- End of picture text -----**<br>


The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. 

## **Absolute Maximum Ratings@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter|Rating|Units|
|---|---|---|---|
|VDS<br>~~a~~|Drain-Source Voltage|100|V|
|VGS<br>~~a~~|Gate-Source Voltage|+<br>20|V|
|ID@TA=25℃<br>~~a~~<br>~~a~~|Drain Current, VGS@ 10V3|11|A|
|ID@TA=70℃<br>~~a~~|Drain Current, VGS@ 10V3|8.7|A|
|IDM<br>~~a~~|Pulsed Drain Current1|40|A|
|PD@TA=25℃<br>~~a~~|Total Power Dissipation|2.5|W|
|TSTG<br>~~a~~|Storage Temperature Range|-55 to 150|℃|
|TJ<br>~~a~~|OperatingJunction Temperature Range|-55 to 150|℃|



## **Thermal Data** 

|Symbol|Parameter|Value|Unit|
|---|---|---|---|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|50|℃/W|



**1** 

**202311231YAGEO** 

**XP10N011LM** 

## **Electrical Characteristics@Tj=25[o] C(unless otherwise specified)** 

|Symbol<br>~~a~~|Parameter<br>~~ee~~|Test Conditions|Min.|Typ.|Max.|Units|
|---|---|---|---|---|---|---|
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~ee~~|VGS=0V, ID=250uA<br>~~ee~~|100<br>~~ee~~|-|-|V|
|RDS(ON)<br>~~a~~|Static Drain-Source On-Resistance2<br>~~a~~|VGS=10V, ID=10A<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|-<br>~~a~~|11<br>~~a~~|mΩ<br>~~a~~|
|||VGS=5V, ID=5A<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|-<br>~~a~~|16.5<br>~~a~~|mΩ<br>~~a~~|
|VGS(th)|Gate Threshold Voltage|VDS=VGS, ID=250uA<br>~~ee~~|1.4<br>~~ee~~|-|2.5|V|
|gfs|Forward Transconductance|VDS=5V, ID=10A|-|28|-|S|
|IDSS<br>~~a~~|Drain-Source Leakage Current<br>~~a~~<br>~~a~~|VDS=80V, VGS=0V<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|25<br>~~a~~<br>~~a~~|uA<br>~~a~~<br>~~a~~|
|IGSS<br>~~a~~|Gate-Source Leakage<br>~~a~~<br>~~a~~|VGS= +<br>20V, VDS=0V<br>~~a~~<br>~~OO~~|-<br>~~a~~<br>~~OO~~|-<br>~~a~~<br>~~OO~~|+<br>0.1<br>~~a~~<br>~~OO~~|uA<br>~~a~~|
|Qg<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~a~~|ID=10A<br>VDS=50V<br>VGS=10V<br>~~a~~<br>~~OO~~<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~OO~~<br>~~ry~~|28<br>~~a~~<br>~~OO~~<br>~~ry~~|44.8<br>~~a~~<br>~~OO~~<br>~~ry~~|nC<br>~~a~~<br>~~ry~~|
|Qgs<br>~~a~~|Gate-Source Charge<br>~~a~~||-<br>~~a~~<br>~~a~~|4<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|Qgd<br>~~a~~|Gate-Drain("Miller")Charge<br>~~a~~||-<br>~~a~~<br>~~a~~|11<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|td(on)<br>~~a~~|Turn-on DelayTime|VDS=50V<br>ID=1A<br>RG=3.3Ω<br>VGS=10V<br>~~a~~<br>~~a~~<br>~~a~~|-<br>~~pT~~|9<br>~~pT~~|-<br>~~pT~~|ns<br>~~pT~~|
|tr<br>~~a~~|Rise Time<br>~~a~~||-<br>~~a~~<br>~~a~~|9<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|td(off)<br>~~a~~|Turn-off DelayTime<br>~~a~~||-<br>~~a~~<br>~~a~~|32<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|tf<br>~~a~~|Fall Time<br>~~a~~||-<br>~~a~~<br>~~a~~|85<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|ns<br>~~a~~<br>~~a~~|
|Ciss<br>~~a~~|Input Capacitance<br>~~a~~|VGS=0V<br>VDS=80V<br>f=1.0MHz<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~pT~~|1200<br>~~a~~<br>~~pT~~|1920<br>~~a~~<br>~~pT~~|pF<br>~~a~~<br>~~pT~~|
|Coss<br>~~a~~|Output Capacitance||-<br>~~po~~|230<br>~~po~~|-<br>~~po~~|pF<br>~~po~~|
|Crss<br>~~a~~|Reverse Transfer Capacitance<br>~~a~~||-<br>~~a~~<br>~~a~~<br>~~OC~~|15<br>~~a~~<br>~~a~~<br>~~OC~~|-<br>~~a~~<br>~~a~~<br>~~OC~~|pF<br>~~a~~<br>~~a~~|
|Rg<br>~~a~~|Gate Resistance<br>~~a~~<br>~~a~~|f=1.0MHz<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~<br>~~OC~~|1.5<br>~~a~~<br>~~a~~<br>~~OC~~|3<br>~~a~~<br>~~a~~<br>~~OC~~|Ω<br>~~a~~<br>~~a~~|



## **Notes:** 

1.Pulse width limited by Max. junction temperature. 

2.Pulse test 

3.Surface mounted on 1 in[2] 2oz copper pad of FR4 board, t <10sec, 125[o] C/W when mounted on min. copper pad. 

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. 

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT, AUTOMOTIVE OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. XSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. XSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 

**2** 

**XP10N011LM** 

**==> picture [417 x 612] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 25<br>T A =25 [o] C 10V T A =150 [o] C 10V<br>8.0V 8.0V<br>32 7.0V 20 7.0V<br>6.0V 6.0V<br>V  GS =5.0V V GS =5.0V<br>24 r | 15<br>16 10<br>8 5<br>0 Bisnis 0<br>0 2 4 6 8 0 2 4 6 8<br>V DS  , Drain-to-Source Voltage (V) V DS  , Drain-to-Source Voltage (V)<br>              Fig 1. Typical Output Characteristics            Fig 2. Typical Output Characteristics<br>24 2.4<br>I D =5A I D  =10A<br>T A =25 [o] C 2 V GS =10V<br>20<br>i 1.6 HE<br>16<br>1.2<br>12<br>0.8<br>8 ASEE) 0.4 pegaEE<br>2 3 4 5 6 7 8 9 10 -100 -50 0 50 100 150<br>V GS  Gate-to-Source Voltage (V) T j  , Junction Temperature ( [o] C)<br>             Fig 3. On-Resistance  v.s. Gate Voltage             Fig 4. Normalized On-Resistance<br>         v.s. Junction Temperature<br>30 2<br>I D =250uA<br>24 BSE 1.6<br>ESE! FREERE<br>18 1.2<br>BnaaaT Gute<br>12 T j =150 [o] C T j =25 [o] C 0.8<br>6 0.4<br>0 | 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150<br>V SD  , Source-to-Drain Voltage (V) T j  ,Junction Temperature (  [o] C)<br> , Drain Current (A)  , Drain Current (A)<br>ID ID<br>Ω )<br>DS(ON)<br> (m<br>DS(ON)<br>R<br>Normalized R<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>


**Fig 1. Typical Output Characteristics** 

**Fig 3. On-Resistance  v.s. Gate Voltage** 

**==> picture [188 x 23] intentionally omitted <==**

**----- Start of picture text -----**<br>
                  Fig 5. Forward Characteristic of<br>              Reverse Diode<br>**----- End of picture text -----**<br>


**Fig 6. Gate Threshold Voltage v.s. Junction Temperature** 

**3** 

**XP10N011LM** 

**==> picture [188 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
12<br>I D =10A<br>10 V DS =50V<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40<br>Q G  , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig 7. Gate Charge Characteristics** 

**==> picture [187 x 390] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>Serene iSNty aok—deaturnines creer: REREETET<br>Operation in this area<br>10 limited by RDS(ON) L WA  us SONN<br>100us<br>1<br>ZN yo<br>oN 1ms<br>10ms<br>0.1<br>T A =25 [o] C<br>Single Pulse DC<br>0.01 mee i} i} Ltt Itt =<se 1 JEtt<br>0.01 0.1 1 10 100 1000<br>V DS  , Drain-to-Source Voltage (V)<br>             Fig 9. Maximum Safe Operating Area<br>15<br>12<br>9<br>6<br>3<br>0<br>25 50 75 100 125 150<br>T A  , Ambient Temperature (  [o] C )<br>(A)<br>ID<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 9. Maximum Safe Operating Area** 

**Fig 11. Drain Current v.s. Ambient Temperature** 

**==> picture [192 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
f=1.0MHz<br>3000<br>2500<br>2000<br>1500<br>C iss<br>1000<br>500<br>C oss<br>C rss<br>0 MS<br>1 21 41 61 81 101 121<br>V DS   ,Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>


**Fig 8. Typical Capacitance Characteristics** 

**==> picture [194 x 388] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>Duty factor=0.5<br>all<br>0.2<br>a TOG<br>0.1 0.1<br>0.05<br>0.02<br>0.01 a 0.01 oa<br>= SEES SSS Sea<br>PDM<br>t<br>0.001 T<br>Single Pulse<br>Duty factor = t/T<br>Peak Tj = PDM x Rthja + TA<br>Rthja = 125 [o] C/W<br>0.0001 a vn ||<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t , Pulse Width (s)<br>  Fig 10. Effective Transient Thermal Impedance<br>30<br>V  DS  =5V<br>24<br>18<br>12<br>T j  =150 [o] C<br>6 T j =25 [o] C<br>T j = -55 [o] C<br>0<br>0 1 2 3 4 5 6<br>V GS , Gate-to-Source Voltage (V)<br>)thja<br>Normalized Thermal Response (R<br> , Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Fig 10. Effective Transient Thermal Impedance** 

**Fig 12. Transfer Characteristics** 

**4** 

**XP10N011LM** 

**==> picture [427 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
80 60<br>T j =25 [o] C<br>50<br>60<br>40<br>40 Sa 30<br>20<br>20 uber EEESES<br>5.0V 10<br>V GS =10V<br>0 pepe] 0 EDS<br>0 5 10 15 20 25 30 35 0 50 100 150<br>I D  , Drain Current (A) T A , Ambient Temperature( [o] C)<br>              Fig 13. Typ. Drain-Source on State               Fig 14. Total Power Dissipation<br>            Resistance<br>Ω )<br>(m<br>DS(ON)<br>R<br>, Power Dissipation(W)<br>D<br>P<br>**----- End of picture text -----**<br>


**5** 

**XP10N011LM** 

## **MARKING INFORMATION** 

**==> picture [269 x 107] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number<br>10N011L<br>YWWSSS Date Code (YWWSSS)<br>          Y ： Last Digit Of  The Year<br>          WW ： Week<br>          SSS ： Sequence<br>**----- End of picture text -----**<br>


**6** 

**==> picture [476 x 396] intentionally omitted <==**

**----- Start of picture text -----**<br>
Package Outline : SO-8<br>D<br>Millimeters<br>SYMBOLS<br>MIN NOM MAX<br>A 1.35 1.55 1.75<br>8 7 6 5<br>A1 0.05 0.15 0.25<br>B 0.30 0.41 0.51<br>E1 E<br>D 4.80 5.05 5.30<br>E 5.79 6.00 6.20<br>1<br>2 3 4 E1 3.70 3.90 4.10<br>e 1.27 TYP<br>G 0.17 0.21 0.25<br>e F 0.38 0.83 1.27<br>ul l<br>B α 0° 4° 8°<br>A<br>1.All Dimension Are In Millimeters.<br>A1<br>a<br>2.Dimension Does Not Include Mold Protrusions.<br>.<br>G α<br>F<br>**----- End of picture text -----**<br>


Draw No.  M1-M8-G-v03 

**SO-8** 

## **SO-8 FOOTPRINT** ： 

- . 

- +] 

Draw No. M1-M8-G-v03 

1