X0405MF 1AA2
Thyristor, 600 V, 50 µA, 900 mA, 4 A, TO-202, 3 Pins
- Manufacturer: STMICROELECTRONICS
- Product type: Thyristors - SCRs
- No. of Pins: 3Pins
- Thyristor Mounting: Through Hole
- Holding Current Max: 5mA
- On State RMS Current: 4A
- Thyristor Case Style: TO-202
- Average On State Current: 900mA
- Gate Trigger Current Max: 50µA
- Gate Trigger Voltage Max: 800mV
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: 30A
- Peak Repetitive Off State Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.368 € |
| Current stock | 10+ |
| Lead time | 30 days |
**==> picture [62 x 39] intentionally omitted <==** ## **X04 Series** ## **SENSITIVE** ## 4A SCRS ## **MAIN FEATURES:** |**Symbol**|**Value**|**Unit**| |---|---|---| |**IT(RMS)**|4|A| |**VDRM/VRRM**|600 and 800|V| |**IGT**|50 to 200|µA| ## **DESCRIPTION** Thanks to highly sensitive triggering levels, the X04 SCR series is suitable for all applications where the available gate current is limited, such as capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies... **==> picture [37 x 57] intentionally omitted <==** **==> picture [108 x 83] intentionally omitted <==** **TO202-3 (X04xxF)** ## **ABSOLUTE RATINGS** (limiting values) |**Symbol**|**Parameter**|**Parameter**||**Value**|**Unit**| |---|---|---|---|---|---| |IT(RMS)|RMS on-state current (180° conduction angle)||Tl = 60°C|4|A| ||||Tamb = 25°C|1.35|| |IT(AV)|Average on-state current (180° conduction angle)||Tl = 60°C|2.5|A| ||||Tamb = 25°C|0.9|| |ITSM|Non repetitive surge peak on-state<br>current|tp = 8.3 ms|Tj = 25°C|33|A| |||tp = 10 ms||30|| |I²t|I²t Value for fusing|tp = 10 ms|Tj = 25°C|4.5|A2S| |dI/dt|Critical rate of rise of on-state current<br>IG = 2 x IGT, tr≤100ns|F = 60 Hz|Tj = 125°C|50|A/µs| |IGM|Peak gate current|tp = 20 µs|Tj = 125°C|1.2|A| |PG(AV)|Average gate power dissipation||Tj = 125°C|0.2|W| |Tstg<br>Tj|Storage junction temperature range<br>Operating junction temperature range|||- 40 to + 150<br>- 40 to + 125|°C| September 2000 - Ed: 3 1/5 ## **X04 Series** ## **ELECTRICAL CHARACTERISTICS** (Tj = 25°C, unless otherwise specified) |**Symbol**|**Test Conditions**|**Test Conditions**||**X04xx**|**X04xx**|**Unit**| |---|---|---|---|---|---|---| |||||**02**|**05**|| |IGT|VD= 12 V<br>RL= 140Ω||MIN.|_|20|µA| ||||MAX.|200|50|| |VGT|||MAX.|0.8||V| |VGD|VD= VDRM<br>RL= 3.3 kΩ<br>RGK= 1 kΩ|Tj = 125°C|MIN.|0.1||V| |VRG|IRG= 10 µA||MIN.|8||V| |IH|IT= 50mA<br>RGK= 1kΩ||MAX.|5||mA| |IL|IG= 1mA<br>RGK= 1kΩ||MIN.|6||mA| |dV/dt|VD= 67% VDRM<br>RGK= 1kΩ|Tj = 110°C|MIN.|10|15|V/µs| |VTM|ITM= 8 A<br>tp = 380 µs|Tj = 25°C|MAX.|1.8||V| |Vt0|Threshold voltage|Tj = 125°C|MAX.|0.95||V| |Rd|Dynamic resistance|Tj = 125°C|MAX.|100||mΩ| |IDRM<br>IRRM|VDRM= VRRM<br>RGK= 1 kΩ|Tj = 25°C|MAX.|5||µA| |||Tj = 125°C||1||mA| ## **THERMAL RESISTANCES** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |Rth(j-l)|Junction to leads (DC)|15|°C/W| |Rth(j-a)|Junction to ambient (DC)|100|| ## **PRODUCT SELECTOR** |**Part Number**|**Voltage**|**Voltage**|**Sensitivity**|**Package**| |---|---|---|---|---| ||**600 V**|**800 V**||| |X0402MF|X||200 µA|TO202-3| |X0402NF||X|200 µA|TO202-3| |X0405MF|X||50 µA|TO202-3| |X0405NF||X|50 µA|TO202-3| 2/5 **X04 Series** ## **ORDERING INFORMATION** **==> picture [341 x 96] intentionally omitted <==** ## **OTHER INFORMATION** |**Part Number**|**Marking**|**Weight**|**Base Quantity**|**Packing mode**| |---|---|---|---|---| |X04xxyF 1AA2|X04xxyF|0.8 g|250|Bulk| |X04xxyF 0AA2|X04xxyF|0.8 g|50|Tube| **Note** : xx = sensitivity, y = voltage **Fig. 1:** Maximum average power dissipation versus average on-state current. **Fig. 2-1:** Average and D.C. on-state current versus lead temperature. **==> picture [211 x 129] intentionally omitted <==** **==> picture [212 x 129] intentionally omitted <==** **Fig. 2-2:** Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout). **Fig. 3:** Relative variation of thermal impedance junction to ambient versus pulse duration. **==> picture [214 x 125] intentionally omitted <==** **==> picture [216 x 129] intentionally omitted <==** 3/5 **X04 Series** **Fig. 4:** Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). **==> picture [213 x 126] intentionally omitted <==** **Fig. 6:** Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). **==> picture [215 x 135] intentionally omitted <==** **Fig. 8:** Surge peak on-state current versus number of cycles. **==> picture [215 x 123] intentionally omitted <==** **Fig. 5:** Relative variation of holding current versus gate-cathode resistance (typical values). **==> picture [217 x 136] intentionally omitted <==** **Fig. 7:** Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). **==> picture [213 x 135] intentionally omitted <==** **Fig. 9:** Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. **==> picture [216 x 126] intentionally omitted <==** 4/5 **X04 Series** **Fig. 10:** On-state characteristics (maximum values). **==> picture [212 x 127] intentionally omitted <==** ## **PACKAGE MECHANICAL DATA** TO202-3 (Plastic) **==> picture [227 x 174] intentionally omitted <==** |**REF.**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**|**DIMENSIONS**| |---|---|---|---|---|---|---| ||**Millimeters**|||**Inches**||| ||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**| |A<br>|||10.1|||0.398| |C||7.3|||0.287|| |D||10.5|||0.413|| |F|||1.5|||0.059| |H||0.51|||0.020|| |J||1.5|||0.059|| |M||4.5|||0.177|| |N|||5.3|||0.209| |N1||2.54|||0.100|| |O|||1.4|||0.055| |P|||0.7|||0.028| Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics - © 2000 STMicroelectronics - Printed in Italy - All Rights Reserved ## STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom **http://www.st.com** 5/5
Updated at February 9, 2023
STMicroelectronics is a global leader in the semiconductor industry, recognized for developing highly integrated, energy-efficient solutions that power modern electronics. With a strong focus on innovation, ST provides a comprehensive portfolio of microelectronics that address the demanding requirements of industrial, automotive, communications, and consumer applications. Our extensive selection of STMicroelectronics components is built around a robust lineup of discrete semiconductors and circuit protection devices. We offer a wide variety of single MOSFETs, Schottky diodes, and fast and ultrafast recovery rectifier diodes, designed to deliver exceptional efficiency and thermal performance in power management and conversion systems. For robust circuit protection, our inventory features hundreds of transient voltage suppressors and TVS diodes that safeguard sensitive electronic components against destructive voltage spikes. In addition to core power discretes like TRIACs, SCRs, bipolar transistors, and single IGBTs, our STMicroelectronics range includes specialized integrated passive filters and MEMS sensors. Furthermore, ST offers advanced integrated passive devices, such as baluns and RF filters, which utilize high-quality monolithic RF IPD processes on glass or high-resistance silicon substrates. These components provide competitive cost structures, reduced power losses, and simplified RFIC-to-antenna matching, ensuring optimal system performance and delivering the reliability required for next-generation wireless and power designs.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 540,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →