VVZ175-16IO7
THYRISTOR DIODE MODULE, 1.6KV, 89A
- Manufacturer: LITTELFUSE
- Product type: Thyristors - SCR Modules
- SVHC: To Be Advised
- No. of Pins: 8Pins
- Product Range: -
- SCR Module Type: Bridge Rectifier, Three Phase - SCR / Diode
- Thyristor Mounting: Panel
- On State RMS Current: 89A
- Thyristor Case Style: Module
- Average Forward Current: 167A
- Gate Trigger Current Max: 100mA
- Gate Trigger Voltage Max: 1.5V
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 1.6kV
- Peak Repetitive Off State Voltage: 1.6kV
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 78.56 € |
| Current stock | 10+ |
| Lead time | 30 days |
**VVZ 110 VVZ 175** ## **Three Phase Half Controlled Rectifier Bridge, B6HK** **IdAVM = 110/167 A VRRM = 1200-1600 V** ||||||||E|| |---|---|---|---|---|---|---|---|---| ||||||D|||| |**VRSM**<br>**VRRM**<br>**Type**<br>**VDSM**<br>**VDRM**<br>V<br>V<br>**1300**<br>**1200**<br>**VVZ 110-12io7**<br>**VVZ 175-12io7**<br>**1700**<br>**1600**<br>**VVZ 175-16io7**<br>~~—— ~~||A<br>B<br>E<br>D<br>C<br>2<br>3<br>1<br> &|||1<br>2<br>3<br>~<br>C<br>~|A<br>+|~|B<br>-| |**Symbol**|**Test Conditions**|**Maximum Ratings**||||||| |||**VVZ 110**|**VVZ 175**|||||| |**IdAV**|TC= 85°C; module|110|167|A|**Features**|||| |**IFRMS, ITRMS**|per leg|58|89|A||||| |**IFSM, ITSM**|TVJ= 45°C;<br>t = 10 ms (50 Hz), sine<br>VR= 0<br>t = 8.3 ms (60 Hz), sine|1150<br>1230|1500<br>1600|A<br>A|Package with screw terminals<br>Isolation voltage 3000 V~<br>Planar passivated chips|||| ||TVJ= TVJM<br>t = 10 ms (50 Hz), sine|1000|1350|A|UL registered E72873|||| ||VR= 0<br>t = 8.3 ms (60 Hz), sine|1070|1450|A||||| |**I2t**|TVJ= 45°C<br>t = 10 ms (50 Hz), sine<br>VR= 0<br>t = 8.3 ms (60 Hz), sine|6600<br>6280|11200<br>10750|A2s<br>A2s|**Applications**|||| |**(di/dt)cr**|TVJ= TVJM<br>t = 10 ms (50 Hz), sine<br>VR= 0<br>t = 8.3 ms (60 Hz), sine<br>TVJ= TVJM<br>repetitive, IT= 50 A<br>f =400 Hz, tP=200 µs|5000<br>9100<br>4750<br>8830<br>150||A2s<br>A2s<br>A/µs|Input rectifier for PWM converter<br>Input rectifier for switch mode power<br>supplies (SMPS)<br>Softstart capacitor charging|||| ||VD= 2/3 VDRM|||||||| ||IG= 0.3 A,<br>non repetitive,<br>diG/dt = 0.3 A/µs, IT= 1/3 • IdAV|500||A/µs|**Advantages**|||| |**(dv/dt)cr**|TVJ= TVJM; VDR= 2/3 VDRM<br>RGK=∞; method 1 (linear voltage rise)|1000||V/µs|Easy to mount with two screws<br>Space and weight savings<br>Improved temperature and power|||| |**VRGM**||10||V|cycling|||| |**PGM**|TVJ= TVJM<br>tp=<br>30 µs|≤<br>10||W||||| ||IT= ITAVM<br>tp= 500 µs|≤|5|W||||| ||tp=<br>10 ms|≤|1|W||||| |**PGAVM**||0.5||W||||| |**TVJ**||-40...+125||°C||||| |**TVJM**||125||°C||||| |**Tstg**||-40...+125||°C||||| |**VISOL**|50/60 Hz, RMS t = 1 min|2500||V~||||| ||IISOL ≤1 mA<br>t = 1 s|3000||V~||||| |**Md**|Mounting torque (M6)|5±15 %|15 %|Nm||||| ||Terminal connection torque (M6)|5±15 %|15 %|Nm||||| |**Weight**|typ.|300||g||||| Input rectifier for PWM converter Input rectifier for switch mode power supplies (SMPS) Softstart capacitor charging Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 20100706b © 2010 IXYS All rights reserved 1 - 2 **VVZ 110 VVZ 175** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**| |---|---| |**VVZ 110**<br>**V**|**VZ 175**| |**IR, ID**<br>VR= VRRM; VD= VDRM<br>TVJ= TVJM<br>≤<br>5<br>mA<br>TVJ= 25°C<br>≤<br>0.3<br>mA|| |**VF, VT**<br>IF, IT= 200 A, TVJ= 25°C<br>≤<br>1.75|1.57<br>V| |**VT0**<br>For power-loss calculations only<br>0.85<br>**rT**<br>(TVJ= 125°C)<br>6|0.85<br>V<br>3.5<br>mΩ| |**VGT**<br>VD= 6 V;<br>TVJ= 25°C<br>≤<br>1.5<br>V<br>TVJ= -40°C<br>≤<br>1.6<br>V<br>**IGT**<br>VD= 6 V;<br>TVJ= 25°C<br>≤<br>100<br>mA<br>TVJ= -40°C<br>≤<br>200<br>mA|| |**VGD**<br>TVJ= TVJM;<br>VD=2/3VDRM<br>≤<br>0.2<br>V<br>**IGD**<br>TVJ= TVJM;<br>VD=2/3VDRM<br>≤<br>5<br>mA|| |**IL**<br>IG= 0.3 A; tG= 30 µs<br>TVJ= 25°C<br>≤<br>450<br>mA<br>diG/dt = 0.3 A/µs|| |**IH**<br>TVJ= 25°C; VD= 6 V; RGK=∞<br>≤<br>200<br>mA|| |**tgd**<br>TVJ= 25°C; VD= ½ VDRM<br>≤<br>2<br>µs<br>IG= 0.3 A; diG/dt = 0.3 A/µs|| |**RthJC**<br>per thyristor (diode); DC current<br>0.65<br>per module<br>0.108<br><br>**RthJH**<br>per thyristor (diode); DC current<br>0.8<br>per module<br>0.133<br>|0.46<br>K/W<br>0.077<br>K/W<br>0.55<br>K/W<br>0.092<br>K/W| |**dS**<br>Creeping distance on surface<br>10<br>mm<br>**dA**<br>Creepage distance in air<br>9.4<br>mm<br>**a**<br>Max allowable acceleration<br>50<br>m/s|| ## **Dimensions in mm (1 mm = 0.0394")** **==> picture [160 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1: I GT , T VJ = 125°C<br>V 2: IGT, TVJ = 25 ° C<br>3: I GT , T VJ = -40°C<br>VG<br>3<br>2<br>6<br>1 5<br>1<br>4<br>4: PGAV = 0.5 W<br>5: PGM = 5 W<br>IGD, TVJ = 125°C 6: PGM = 10 W<br>0.1<br>1 10 100 1000 mA<br>IG<br>**----- End of picture text -----**<br> Fig. 1 Gate trigger characteristics **==> picture [161 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>A VVZ 110<br>100<br>IdAV<br>80<br>60<br>40<br>20<br>0<br>0 50 100 °C 150<br>TC<br>Fig. 2 DC output current at case<br>temperature<br>**----- End of picture text -----**<br> **==> picture [510 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> M6x12<br>900 0.7<br>A VVZ 110 50 Hz K/W VVZ 110<br>800 80% V RRM 0.6<br>IFSM ZthJC<br>700<br>TVJ = 45°C 0.5<br>600<br>0.4<br>94<br>80 500<br>26 72 26 0.3<br>400<br>TVJ = 125°C 0.2<br>300<br>C ~ D ~ E ~<br>A + B - 200 0.1<br>3 4<br>2 5<br>1 6 100 0.0<br>10 [-3] 10 [-2] 10 [-1] 10 [0] s 10 [1] 10 [-3] 10 [-2] 10 [-1] 10 [0] s 10 [1]<br>2.8 x 0.8 12 25 7 t t<br>M6 66 Fig. 3 Surge overload current Fig. 4 Transient thermal impedance<br> IFSM: Crest value, t: duration junction to case (per leg)<br>7<br>30<br>3<br>15<br>54 27 6.5 6.5<br>5<br>5<br>6<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100706b 2 - 2
Updated at June 9, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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